DE1236668B - Silizium-Halbleiterdiode zum Nachweis von Alphateilchen - Google Patents

Silizium-Halbleiterdiode zum Nachweis von Alphateilchen

Info

Publication number
DE1236668B
DE1236668B DEC26161A DEC0026161A DE1236668B DE 1236668 B DE1236668 B DE 1236668B DE C26161 A DEC26161 A DE C26161A DE C0026161 A DEC0026161 A DE C0026161A DE 1236668 B DE1236668 B DE 1236668B
Authority
DE
Germany
Prior art keywords
opening
thin layer
housing
silicon wafer
attached
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEC26161A
Other languages
German (de)
English (en)
Inventor
Jean Grosvalet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Publication of DE1236668B publication Critical patent/DE1236668B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
    • H10F30/2955—Shallow PN junction radiation detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DEC26161A 1961-02-14 1962-02-03 Silizium-Halbleiterdiode zum Nachweis von Alphateilchen Pending DE1236668B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR852622A FR1288817A (fr) 1961-02-14 1961-02-14 Diode à jonction semi-conductrice destinée à la détection de particules alpha

Publications (1)

Publication Number Publication Date
DE1236668B true DE1236668B (de) 1967-03-16

Family

ID=8748762

Family Applications (1)

Application Number Title Priority Date Filing Date
DEC26161A Pending DE1236668B (de) 1961-02-14 1962-02-03 Silizium-Halbleiterdiode zum Nachweis von Alphateilchen

Country Status (4)

Country Link
BE (1) BE613282A (https=)
DE (1) DE1236668B (https=)
FR (1) FR1288817A (https=)
NL (1) NL274771A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764066B1 (de) * 1967-03-29 1971-08-05 Lenia Fisitscheskij I Im P N L Kernstrahlungsdetektor aus Diamant und Verfahren zu dessen Herstellung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061451B (de) * 1957-10-31 1959-07-16 Siemens Reiniger Werke Ag Roentgenstrahlenmesser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061451B (de) * 1957-10-31 1959-07-16 Siemens Reiniger Werke Ag Roentgenstrahlenmesser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764066B1 (de) * 1967-03-29 1971-08-05 Lenia Fisitscheskij I Im P N L Kernstrahlungsdetektor aus Diamant und Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
NL274771A (https=)
BE613282A (fr) 1962-05-16
FR1288817A (fr) 1962-03-30

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