DE1224841B - Verfahren zum Herstellen von Halbleiter-anordnungen mit aus Aluminium bestehenden Elektroden - Google Patents

Verfahren zum Herstellen von Halbleiter-anordnungen mit aus Aluminium bestehenden Elektroden

Info

Publication number
DE1224841B
DE1224841B DEN18899A DEN0018899A DE1224841B DE 1224841 B DE1224841 B DE 1224841B DE N18899 A DEN18899 A DE N18899A DE N0018899 A DEN0018899 A DE N0018899A DE 1224841 B DE1224841 B DE 1224841B
Authority
DE
Germany
Prior art keywords
layer
nickel
aluminum
electrode
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN18899A
Other languages
German (de)
English (en)
Inventor
Ludovicus Augustinus Esseling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1224841B publication Critical patent/DE1224841B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
    • C23C18/1882—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/161—Containers comprising no base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
DEN18899A 1959-09-16 1960-09-13 Verfahren zum Herstellen von Halbleiter-anordnungen mit aus Aluminium bestehenden Elektroden Pending DE1224841B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL243410 1959-09-16

Publications (1)

Publication Number Publication Date
DE1224841B true DE1224841B (de) 1966-09-15

Family

ID=19751924

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN18899A Pending DE1224841B (de) 1959-09-16 1960-09-13 Verfahren zum Herstellen von Halbleiter-anordnungen mit aus Aluminium bestehenden Elektroden

Country Status (4)

Country Link
CH (1) CH387805A (enExample)
DE (1) DE1224841B (enExample)
GB (1) GB885137A (enExample)
NL (1) NL243410A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0348119A3 (en) * 1988-06-23 1991-07-17 Kabushiki Kaisha Toshiba Method of processing metal connectors on semi-conductor devices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1238103B (de) * 1962-06-05 1967-04-06 Siemens Ag Verfahren zum Herstellen eines Halbleiterbau-elementes

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793420A (en) * 1955-04-22 1957-05-28 Bell Telephone Labor Inc Electrical contacts to silicon

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793420A (en) * 1955-04-22 1957-05-28 Bell Telephone Labor Inc Electrical contacts to silicon

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0348119A3 (en) * 1988-06-23 1991-07-17 Kabushiki Kaisha Toshiba Method of processing metal connectors on semi-conductor devices

Also Published As

Publication number Publication date
CH387805A (de) 1965-02-15
GB885137A (en) 1961-12-20
NL243410A (enExample) 1900-01-01

Similar Documents

Publication Publication Date Title
DE2142146C3 (de) Verfahren zum gleichzeitigen Herstellen mehrerer Halbleiterbauelemente
DE2554691C2 (de) Verfahren zum Herstellen elektrischer Leiter auf einem isolierenden Substrat und danach hergestellte Dünnschichtschaltung
DE1464357B1 (de) Verfahren zur Herstellung einer ohmschen Verbindung zwischen einem Silizium-Halbleiterkoerper und einem metallischen Traegerteil
DE1943519A1 (de) Halbleiterbauelement
DE1180851B (de) Verfahren zum Herstellen einer Halbleiteranordnung, z. B. eines Transistors oder einer Diode
EP0193127A1 (de) Filmmontierter Schaltkreis und Verfahren zu seiner Herstellung
DE1071847B (de) Verfahren zur Herstellung einer im wesentlichen nicht gleichrichtenden flächenhaften Elektrode an dem Halbleiterkörper einer Halbleiteranordnung durch Legierung
DE1614306B2 (de) Verfahren zur Herstellung elektrischer Anschlüsse auf einer Oberfläche eines elektronischen Bauelementes und durch Anwendung dieses Verfahrens hergestelltes Bauelement
DE1614218C3 (enExample)
DE102019135860B4 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE1236660B (de) Halbleiteranordnung mit einem plattenfoermigen, im wesentlichen einkristallinen halbleiterkoerper
DE1178519B (de) Verfahren zur Herstellung von Halbleiter-bauelementen durch das Aufschmelzen einer kleinen Menge Elektrodenmaterials auf einen halbleitenden Koerper
DE1614218B2 (de) Verfahren zum herstellen einer kontaktschicht fuer halbleiteranordnungen
DE1224841B (de) Verfahren zum Herstellen von Halbleiter-anordnungen mit aus Aluminium bestehenden Elektroden
DE3040867C2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE969388C (de) Verfahren zur Herstellung von elektrischen Kontakten an Germanium-Halbleiterkristallen fuer Gleichrichter und aehnliche Halbleitervorrichtungen
DE1213922B (de) Verfahren zur Herstellung einer leicht benetzbaren Metallschicht auf einer keramischen Unterlage fuer Halbleiterbauelemente
DE2359640A1 (de) Elektrischer anschlusskontakt an einen halbleiterkoerper
DE2138083C3 (de) Verfahren zum Anbringen der Anschlußdrähte eines keramischen Kondensators
DE1920585A1 (de) Verfahren zum Herstellen eines mit Loetmittel ueberzogenen,elektrisch leitenden Elementes
DE69607130T2 (de) Elektroplattieren von Nickel auf Nickel-Ferrit Vorrichtungen
DE1952499A1 (de) Verfahren zum Herstellen eines Halbleiterbauelements
EP0193128A2 (de) Filmmontierter Schaltkreis und Verfahren zu seiner Herstellung
DE1125551B (de) Verfahren zur Herstellung eines legierten pn-UEbergangs sehr geringer Eindringtiefe in einem Halbleiterkoerper
AT219662B (de) Verfahren zur Herstellung von Halbleitervorrichtungen mit aus Aluminium bestehenden Elektroden