DE1214791C2 - Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen - Google Patents
Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum HerstellenInfo
- Publication number
- DE1214791C2 DE1214791C2 DE1960T0018836 DET0018836A DE1214791C2 DE 1214791 C2 DE1214791 C2 DE 1214791C2 DE 1960T0018836 DE1960T0018836 DE 1960T0018836 DE T0018836 A DET0018836 A DE T0018836A DE 1214791 C2 DE1214791 C2 DE 1214791C2
- Authority
- DE
- Germany
- Prior art keywords
- zone
- transistor according
- emitter
- base
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 14
- 239000000956 alloy Substances 0.000 claims description 31
- 229910045601 alloy Inorganic materials 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 23
- 238000009792 diffusion process Methods 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 claims description 9
- 230000007547 defect Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 238000005275 alloying Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 239000003792 electrolyte Substances 0.000 claims description 4
- 239000006187 pill Substances 0.000 claims description 4
- 239000002800 charge carrier Substances 0.000 claims description 3
- 238000000866 electrolytic etching Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000007858 starting material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 50
- 229910052732 germanium Inorganic materials 0.000 description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910017802 Sb—Ag Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL254591D NL254591A (fr) | 1960-08-12 | ||
| DE1960T0018836 DE1214791C2 (de) | 1960-08-12 | 1960-08-12 | Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1960T0018836 DE1214791C2 (de) | 1960-08-12 | 1960-08-12 | Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1214791B DE1214791B (de) | 1966-04-21 |
| DE1214791C2 true DE1214791C2 (de) | 1966-11-10 |
Family
ID=37256483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1960T0018836 Expired DE1214791C2 (de) | 1960-08-12 | 1960-08-12 | Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1214791C2 (fr) |
| NL (1) | NL254591A (fr) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE553173A (fr) * | 1954-05-10 | |||
| US2657360A (en) * | 1952-08-15 | 1953-10-27 | Bell Telephone Labor Inc | Four-electrode transistor modulator |
| CH335368A (fr) * | 1957-12-28 | 1958-12-31 | Suisse Horlogerie | Transistor |
| US2924760A (en) * | 1957-11-30 | 1960-02-09 | Siemens Ag | Power transistors |
-
0
- NL NL254591D patent/NL254591A/xx unknown
-
1960
- 1960-08-12 DE DE1960T0018836 patent/DE1214791C2/de not_active Expired
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2657360A (en) * | 1952-08-15 | 1953-10-27 | Bell Telephone Labor Inc | Four-electrode transistor modulator |
| BE553173A (fr) * | 1954-05-10 | |||
| US2924760A (en) * | 1957-11-30 | 1960-02-09 | Siemens Ag | Power transistors |
| CH335368A (fr) * | 1957-12-28 | 1958-12-31 | Suisse Horlogerie | Transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1214791B (de) | 1966-04-21 |
| NL254591A (fr) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2711562C3 (de) | Halbleiterbauelement und Verfahren zu seiner Herstellung | |
| DE2837028C2 (fr) | ||
| DE1944793C3 (de) | Verfahren zur Herstellung einer integrierten Halbleiteranordnung | |
| DE2824133A1 (de) | Feldgesteuerter thyristor | |
| DE4013643A1 (de) | Bipolartransistor mit isolierter steuerelektrode und verfahren zu seiner herstellung | |
| DE1154872B (de) | Halbleiterbauelement mit einem mindestens drei pn-UEbergaenge aufweisenden Halbleiterkoerper | |
| DE1295093B (de) | Halbleiterbauelement mit mindestens zwei Zonen entgegengesetzten Leitungstyps | |
| DE1283399B (de) | Feldeffekt-Transistor mit zwei ohmschen Elektroden und mit einer isolierten Steuerelektrode | |
| DE1489031B1 (de) | Transistor mit einem scheibenfoermigen Halbleiterkoerper und Verfahren zu seiner Herstellung | |
| DE3737790A1 (de) | Quer-doppelgate-thyristor und verfahren zu seiner herstellung | |
| DE2842526A1 (de) | Bipolarer transistor | |
| DE2021160C2 (de) | Thyristortriode | |
| DE1816436A1 (de) | Halbleiterbauelement | |
| DE1514855B2 (de) | Halbleitervorrichtung | |
| DE1539090B1 (de) | Integrierte Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE3528562A1 (de) | Statischer induktionstransistor vom tunnelinjektionstyp und denselben umfassende integrierte schaltung | |
| DE2507038C3 (de) | Inverser Planartransistor und Verfahren zu seiner Herstellung | |
| DE2639364C3 (de) | Thyristor | |
| DE1214791C2 (de) | Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen | |
| DE2458735C2 (de) | Transistor mit einem hohen Stromverstärkungsfaktor bei kleinen Kollektorströmen | |
| DE2909795C2 (de) | Halbleiter-Schaltvorrichtung | |
| DE1063279B (de) | Halbleiteranordnung aus einem Halbleiterkoerper mit flaechenhaftem innerem pn-UEbergang und mit mehr als drei Elektroden | |
| DE2002841A1 (de) | Halbleitervorrichtung | |
| DE1240590B (de) | Integrierte Halbleiterschaltungsanordnung | |
| DE3107909A1 (de) | Feldeffekt-halbleiterbauelement und verfahren zu seiner herstellung |