DE1214791C2 - Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen - Google Patents

Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen

Info

Publication number
DE1214791C2
DE1214791C2 DE1960T0018836 DET0018836A DE1214791C2 DE 1214791 C2 DE1214791 C2 DE 1214791C2 DE 1960T0018836 DE1960T0018836 DE 1960T0018836 DE T0018836 A DET0018836 A DE T0018836A DE 1214791 C2 DE1214791 C2 DE 1214791C2
Authority
DE
Germany
Prior art keywords
zone
transistor according
emitter
base
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1960T0018836
Other languages
German (de)
English (en)
Other versions
DE1214791B (de
Inventor
Dr Ernst Froeschle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL254591D priority Critical patent/NL254591A/xx
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Priority to DE1960T0018836 priority patent/DE1214791C2/de
Publication of DE1214791B publication Critical patent/DE1214791B/de
Application granted granted Critical
Publication of DE1214791C2 publication Critical patent/DE1214791C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE1960T0018836 1960-08-12 1960-08-12 Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen Expired DE1214791C2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
NL254591D NL254591A (enrdf_load_stackoverflow) 1960-08-12
DE1960T0018836 DE1214791C2 (de) 1960-08-12 1960-08-12 Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1960T0018836 DE1214791C2 (de) 1960-08-12 1960-08-12 Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen

Publications (2)

Publication Number Publication Date
DE1214791B DE1214791B (de) 1966-04-21
DE1214791C2 true DE1214791C2 (de) 1966-11-10

Family

ID=37256483

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1960T0018836 Expired DE1214791C2 (de) 1960-08-12 1960-08-12 Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen

Country Status (2)

Country Link
DE (1) DE1214791C2 (enrdf_load_stackoverflow)
NL (1) NL254591A (enrdf_load_stackoverflow)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE553173A (enrdf_load_stackoverflow) * 1954-05-10
US2657360A (en) * 1952-08-15 1953-10-27 Bell Telephone Labor Inc Four-electrode transistor modulator
CH335368A (fr) * 1957-12-28 1958-12-31 Suisse Horlogerie Transistor
US2924760A (en) * 1957-11-30 1960-02-09 Siemens Ag Power transistors

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2657360A (en) * 1952-08-15 1953-10-27 Bell Telephone Labor Inc Four-electrode transistor modulator
BE553173A (enrdf_load_stackoverflow) * 1954-05-10
US2924760A (en) * 1957-11-30 1960-02-09 Siemens Ag Power transistors
CH335368A (fr) * 1957-12-28 1958-12-31 Suisse Horlogerie Transistor

Also Published As

Publication number Publication date
NL254591A (enrdf_load_stackoverflow)
DE1214791B (de) 1966-04-21

Similar Documents

Publication Publication Date Title
DE2711562C3 (de) Halbleiterbauelement und Verfahren zu seiner Herstellung
DE2837028C2 (enrdf_load_stackoverflow)
DE1944793C3 (de) Verfahren zur Herstellung einer integrierten Halbleiteranordnung
DE2824133A1 (de) Feldgesteuerter thyristor
DE4013643A1 (de) Bipolartransistor mit isolierter steuerelektrode und verfahren zu seiner herstellung
DE1154872B (de) Halbleiterbauelement mit einem mindestens drei pn-UEbergaenge aufweisenden Halbleiterkoerper
DE1295093B (de) Halbleiterbauelement mit mindestens zwei Zonen entgegengesetzten Leitungstyps
DE1283399B (de) Feldeffekt-Transistor mit zwei ohmschen Elektroden und mit einer isolierten Steuerelektrode
DE1489031B1 (de) Transistor mit einem scheibenfoermigen Halbleiterkoerper und Verfahren zu seiner Herstellung
DE3737790A1 (de) Quer-doppelgate-thyristor und verfahren zu seiner herstellung
DE2842526A1 (de) Bipolarer transistor
DE2021160C2 (de) Thyristortriode
DE1514855B2 (de) Halbleitervorrichtung
DE1816436A1 (de) Halbleiterbauelement
DE1539090B1 (de) Integrierte Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE3528562A1 (de) Statischer induktionstransistor vom tunnelinjektionstyp und denselben umfassende integrierte schaltung
DE2507038C3 (de) Inverser Planartransistor und Verfahren zu seiner Herstellung
DE2639364C3 (de) Thyristor
DE1214791C2 (de) Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen
DE2458735C2 (de) Transistor mit einem hohen Stromverstärkungsfaktor bei kleinen Kollektorströmen
DE1063279B (de) Halbleiteranordnung aus einem Halbleiterkoerper mit flaechenhaftem innerem pn-UEbergang und mit mehr als drei Elektroden
DE2909795C2 (de) Halbleiter-Schaltvorrichtung
DE2002841A1 (de) Halbleitervorrichtung
DE1240590B (de) Integrierte Halbleiterschaltungsanordnung
DE3107909A1 (de) Feldeffekt-halbleiterbauelement und verfahren zu seiner herstellung