DE1194505B - Halbleiterbauelement zur elektrischen Verstaerkung und Steuerung - Google Patents

Halbleiterbauelement zur elektrischen Verstaerkung und Steuerung

Info

Publication number
DE1194505B
DE1194505B DET17211A DET0017211A DE1194505B DE 1194505 B DE1194505 B DE 1194505B DE T17211 A DET17211 A DE T17211A DE T0017211 A DET0017211 A DE T0017211A DE 1194505 B DE1194505 B DE 1194505B
Authority
DE
Germany
Prior art keywords
semiconductor component
component according
semiconductor
ohmic
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DET17211A
Other languages
German (de)
English (en)
Inventor
Dr Joachem Thuy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL255886D priority Critical patent/NL255886A/xx
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Priority to DET17211A priority patent/DE1194505B/de
Priority to US55439A priority patent/US3142020A/en
Priority to GB31743/60A priority patent/GB968588A/en
Publication of DE1194505B publication Critical patent/DE1194505B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
DET17211A 1959-09-15 1959-09-15 Halbleiterbauelement zur elektrischen Verstaerkung und Steuerung Pending DE1194505B (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
NL255886D NL255886A (OSRAM) 1959-09-15
DET17211A DE1194505B (de) 1959-09-15 1959-09-15 Halbleiterbauelement zur elektrischen Verstaerkung und Steuerung
US55439A US3142020A (en) 1959-09-15 1960-09-12 Semiconductor arrangement having lattice faults in its breakdown region
GB31743/60A GB968588A (en) 1959-09-15 1960-09-15 Improved semiconductor arrangement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET17211A DE1194505B (de) 1959-09-15 1959-09-15 Halbleiterbauelement zur elektrischen Verstaerkung und Steuerung

Publications (1)

Publication Number Publication Date
DE1194505B true DE1194505B (de) 1965-06-10

Family

ID=7548510

Family Applications (1)

Application Number Title Priority Date Filing Date
DET17211A Pending DE1194505B (de) 1959-09-15 1959-09-15 Halbleiterbauelement zur elektrischen Verstaerkung und Steuerung

Country Status (4)

Country Link
US (1) US3142020A (OSRAM)
DE (1) DE1194505B (OSRAM)
GB (1) GB968588A (OSRAM)
NL (1) NL255886A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328605A (en) * 1964-09-30 1967-06-27 Abraham George Multiple avalanche device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2790034A (en) * 1953-03-05 1957-04-23 Bell Telephone Labor Inc Semiconductor signal translating devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2651831A (en) * 1950-07-24 1953-09-15 Bell Telephone Labor Inc Semiconductor translating device
DE970420C (de) * 1951-03-10 1958-09-18 Siemens Ag Elektrisches Halbleitergeraet
US2644895A (en) * 1952-07-01 1953-07-07 Rca Corp Monostable transistor triggered circuits
US2764642A (en) * 1952-10-31 1956-09-25 Bell Telephone Labor Inc Semiconductor signal translating devices
US2750453A (en) * 1952-11-06 1956-06-12 Gen Electric Direct current amplifier
US2795742A (en) * 1952-12-12 1957-06-11 Bell Telephone Labor Inc Semiconductive translating devices utilizing selected natural grain boundaries
US2802071A (en) * 1954-03-31 1957-08-06 Rca Corp Stabilizing means for semi-conductor circuits

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2790034A (en) * 1953-03-05 1957-04-23 Bell Telephone Labor Inc Semiconductor signal translating devices

Also Published As

Publication number Publication date
US3142020A (en) 1964-07-21
NL255886A (OSRAM)
GB968588A (en) 1964-09-02

Similar Documents

Publication Publication Date Title
EP0114371B1 (de) MISFET mit Eingangsverstärker
DE1024119B (de) Bistabile Gedaechtniseinrichtung mit einem halbleitenden Koerper
DE1279196B (de) Flaechentransistor
DE2619663B2 (de) Feldeffekttransistor, Verfahren zu seinem Betrieb und Verwendung als schneller Schalter sowie in einer integrierten Schaltung
DE2050289A1 (OSRAM)
EP0106059A1 (de) Halbleiterschalter mit einem abschaltbaren Thyristor
DE943964C (de) Halbleiter-Signaluebertragungseinrichtung
DE2740203C2 (de) Ladungsgekoppelte Halbleiteranordnung
DE3736380A1 (de) Schaltungsanordnung zur kontrolle der drain-source-spannung eines mos-transistors
DE2300116B2 (de) Hochfrequenz-Feldeffekttransistor mit isolierter Gate-Elektrode für Breitbandbetrieb
DE1464983C2 (de) in zwei Richtungen schaltbares und steuerbares Halbleiterbauelement
DE1228343B (de) Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie
DE1300993C2 (de) Elektronisches duennschichtbauelement
DE966849C (de) Transistorelement und Transistorschaltung
DE1166340B (de) Halbleiteranordnung aus mit Aktivatoren dotiertem kristallinem Material und mit zweiohmschen Kontaktelektroden
DE2209979C3 (de) Halbleiterbauelement
DE2742361C2 (OSRAM)
DE2835143A1 (de) Thyristor
DE1439368A1 (de) Halbleiterstromtor mit Zuendung durch Feldeffekt
EP0064716B1 (de) Triac und Verfahren zu seinem Betrieb
Meitinger Elektronik. Hightech in Patenten
DE966571C (de) Betriebsschaltung eines Vierzonen-Flaechentransistors
DE2000092C3 (de) Anreicherungs-Isolierschicht-Feldeffekttransistor
AT221139B (de) Unipolartransistor
DE2058070A1 (de) Transistor mit grosser Stromdichte