DE1165700C2 - Verfahren zum Herstellen von Bauelementen oder Baugruppen - Google Patents
Verfahren zum Herstellen von Bauelementen oder BaugruppenInfo
- Publication number
- DE1165700C2 DE1165700C2 DE1962S0080503 DES0080503A DE1165700C2 DE 1165700 C2 DE1165700 C2 DE 1165700C2 DE 1962S0080503 DE1962S0080503 DE 1962S0080503 DE S0080503 A DES0080503 A DE S0080503A DE 1165700 C2 DE1165700 C2 DE 1165700C2
- Authority
- DE
- Germany
- Prior art keywords
- mask
- evaporation
- distance
- carrier
- disc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 53
- 230000008569 process Effects 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000429 assembly Methods 0.000 title claims description 6
- 230000000712 assembly Effects 0.000 title claims description 6
- 230000008020 evaporation Effects 0.000 claims description 40
- 238000001704 evaporation Methods 0.000 claims description 40
- 230000033001 locomotion Effects 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 30
- 238000007740 vapor deposition Methods 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 238000005019 vapor deposition process Methods 0.000 claims description 9
- 230000007246 mechanism Effects 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 5
- 230000000284 resting effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 2
- 238000006073 displacement reaction Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000010025 steaming Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
- H05K3/143—Masks therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL294779D NL294779A (enrdf_load_html_response) | 1962-07-20 | ||
DE1962S0080503 DE1165700C2 (de) | 1962-07-20 | 1962-07-20 | Verfahren zum Herstellen von Bauelementen oder Baugruppen |
CH749663A CH443427A (de) | 1962-07-20 | 1963-06-17 | Verfahren zum Herstellen von elektrischen Bauelementen oder Baugruppen |
FR940261A FR1378052A (fr) | 1962-07-20 | 1963-07-03 | Procédé de fabrication de composants ou de groupes de composants électriques ou électroniques |
GB2867963A GB978984A (en) | 1962-07-20 | 1963-07-19 | Method and apparatus for the vapour deposition of patterns upon a carrier surface |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1962S0080503 DE1165700C2 (de) | 1962-07-20 | 1962-07-20 | Verfahren zum Herstellen von Bauelementen oder Baugruppen |
Publications (2)
Publication Number | Publication Date |
---|---|
DE1165700B DE1165700B (de) | 1964-03-19 |
DE1165700C2 true DE1165700C2 (de) | 1964-09-24 |
Family
ID=7508916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1962S0080503 Expired DE1165700C2 (de) | 1962-07-20 | 1962-07-20 | Verfahren zum Herstellen von Bauelementen oder Baugruppen |
Country Status (5)
Country | Link |
---|---|
CH (1) | CH443427A (enrdf_load_html_response) |
DE (1) | DE1165700C2 (enrdf_load_html_response) |
FR (1) | FR1378052A (enrdf_load_html_response) |
GB (1) | GB978984A (enrdf_load_html_response) |
NL (1) | NL294779A (enrdf_load_html_response) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7413977A (nl) * | 1974-10-25 | 1976-04-27 | Philips Nv | Aanbrengen van een geleiderlaagpatroon met op een geringe onderlinge afstand gelegen delen, in het bijzonder bij de vervaardiging van half- geleiderinrichtingen. |
US4100313A (en) * | 1975-10-28 | 1978-07-11 | Rca Corporation | Process for forming an optical waveguide |
JPS54103552A (en) * | 1978-02-01 | 1979-08-15 | Hitachi Electronics | Pattern formation method |
US4469719A (en) * | 1981-12-21 | 1984-09-04 | Applied Magnetics-Magnetic Head Divison Corporation | Method for controlling the edge gradient of a layer of deposition material |
US4536419A (en) * | 1983-03-10 | 1985-08-20 | Hitachi, Ltd. | Method for forming tapered films |
DE3374790D1 (en) * | 1983-03-11 | 1988-01-14 | Hitachi Ltd | Method for forming thin films |
DE102017105379A1 (de) | 2017-03-14 | 2018-09-20 | Aixtron Se | Substrathalteranordnung mit Maskenträger |
DE102017105374A1 (de) * | 2017-03-14 | 2018-09-20 | Aixtron Se | Vorrichtung zum Abscheiden einer strukturierten Schicht auf einem Substrat sowie Verfahren zum Einrichten der Vorrichtung |
WO2019129364A1 (en) * | 2017-12-29 | 2019-07-04 | Microsoft Technology Licensing, Llc | Fabrication process using vapour deposition through a positioned shadow mask |
-
0
- NL NL294779D patent/NL294779A/xx unknown
-
1962
- 1962-07-20 DE DE1962S0080503 patent/DE1165700C2/de not_active Expired
-
1963
- 1963-06-17 CH CH749663A patent/CH443427A/de unknown
- 1963-07-03 FR FR940261A patent/FR1378052A/fr not_active Expired
- 1963-07-19 GB GB2867963A patent/GB978984A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL294779A (enrdf_load_html_response) | |
DE1165700B (de) | 1964-03-19 |
CH443427A (de) | 1967-09-15 |
FR1378052A (fr) | 1964-11-13 |
GB978984A (en) | 1965-01-01 |
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