DE1150456B - Esaki-Diode und Verfahren zu ihrer Herstellung - Google Patents

Esaki-Diode und Verfahren zu ihrer Herstellung

Info

Publication number
DE1150456B
DE1150456B DES66137A DES0066137A DE1150456B DE 1150456 B DE1150456 B DE 1150456B DE S66137 A DES66137 A DE S66137A DE S0066137 A DES0066137 A DE S0066137A DE 1150456 B DE1150456 B DE 1150456B
Authority
DE
Germany
Prior art keywords
diode according
esaki diode
gaas
tin
esaki
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES66137A
Other languages
German (de)
English (en)
Inventor
Dr Rolf Gremmelmaier
Dr Hans-Joachim Henkel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL257217D priority Critical patent/NL257217A/xx
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES66137A priority patent/DE1150456B/de
Priority to CH1116360A priority patent/CH387806A/de
Priority to US72617A priority patent/US3041508A/en
Priority to FR845974A priority patent/FR1280153A/fr
Priority to GB42196/60A priority patent/GB953198A/en
Publication of DE1150456B publication Critical patent/DE1150456B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10P95/50—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/979—Tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Conductive Materials (AREA)
  • Contacts (AREA)
  • Hall/Mr Elements (AREA)
DES66137A 1959-12-07 1959-12-07 Esaki-Diode und Verfahren zu ihrer Herstellung Pending DE1150456B (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL257217D NL257217A (enExample) 1959-12-07
DES66137A DE1150456B (de) 1959-12-07 1959-12-07 Esaki-Diode und Verfahren zu ihrer Herstellung
CH1116360A CH387806A (de) 1959-12-07 1960-10-05 Tunnel-Diode und Verfahren zu ihrer Herstellung
US72617A US3041508A (en) 1959-12-07 1960-11-30 Tunnel diode and method of its manufacture
FR845974A FR1280153A (fr) 1959-12-07 1960-12-05 Diode-tunnel et procédé pour sa fabrication
GB42196/60A GB953198A (en) 1959-12-07 1960-12-07 A tunnel diode and a process for its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES66137A DE1150456B (de) 1959-12-07 1959-12-07 Esaki-Diode und Verfahren zu ihrer Herstellung

Publications (1)

Publication Number Publication Date
DE1150456B true DE1150456B (de) 1963-06-20

Family

ID=7498576

Family Applications (1)

Application Number Title Priority Date Filing Date
DES66137A Pending DE1150456B (de) 1959-12-07 1959-12-07 Esaki-Diode und Verfahren zu ihrer Herstellung

Country Status (5)

Country Link
US (1) US3041508A (enExample)
CH (1) CH387806A (enExample)
DE (1) DE1150456B (enExample)
GB (1) GB953198A (enExample)
NL (1) NL257217A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1299077B (de) * 1966-10-06 1969-07-10 Madoyan Susanna G Halbleiterbauelement mit einem einen Tunnel-Effekt aufweisenden pn-UEbergang

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3110849A (en) * 1960-10-03 1963-11-12 Gen Electric Tunnel diode device
US3207635A (en) * 1961-04-19 1965-09-21 Ibm Tunnel diode and process therefor
NL277300A (enExample) * 1961-04-20
GB927380A (en) * 1962-03-21 1963-05-29 Mullard Ltd Improvements in or relating to solders
US3299330A (en) * 1963-02-07 1967-01-17 Nippon Electric Co Intermetallic compound semiconductor devices
US3245848A (en) * 1963-07-11 1966-04-12 Hughes Aircraft Co Method for making a gallium arsenide transistor
US3314830A (en) * 1964-08-03 1967-04-18 Texas Instruments Inc Semiconductor contact alloy
US3354365A (en) * 1964-10-29 1967-11-21 Texas Instruments Inc Alloy contact containing aluminum and tin
US3321384A (en) * 1964-10-27 1967-05-23 Harry H Wieder Process for producing semiconductorfilm hall devices on oxide-metal substrate
NL6611537A (enExample) * 1966-08-17 1968-02-19
US3424954A (en) * 1966-09-21 1969-01-28 Bell Telephone Labor Inc Silicon oxide tunnel diode structure and method of making same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2900286A (en) * 1957-11-19 1959-08-18 Rca Corp Method of manufacturing semiconductive bodies

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2829422A (en) * 1952-05-21 1958-04-08 Bell Telephone Labor Inc Methods of fabricating semiconductor signal translating devices
US2931958A (en) * 1954-05-03 1960-04-05 Nat Res Dev Semi-conductor devices
US2842831A (en) * 1956-08-30 1958-07-15 Bell Telephone Labor Inc Manufacture of semiconductor devices
US2937324A (en) * 1959-02-05 1960-05-17 Westinghouse Electric Corp Silicon carbide rectifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2900286A (en) * 1957-11-19 1959-08-18 Rca Corp Method of manufacturing semiconductive bodies

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1299077B (de) * 1966-10-06 1969-07-10 Madoyan Susanna G Halbleiterbauelement mit einem einen Tunnel-Effekt aufweisenden pn-UEbergang

Also Published As

Publication number Publication date
NL257217A (enExample)
GB953198A (en) 1964-03-25
US3041508A (en) 1962-06-26
CH387806A (de) 1965-02-15

Similar Documents

Publication Publication Date Title
DE961913C (de) Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Systemen mit p-n-UEbergaengen
DE1032404B (de) Verfahren zur Herstellung von Flaechenhalbleiterelementen mit p-n-Schichten
DE1292256B (de) Drift-Transistor und Diffusionsverfahren zu seiner Herstellung
DE1152763B (de) Halbleiterbauelement mit mindestens einem PN-UEbergang
DE1150456B (de) Esaki-Diode und Verfahren zu ihrer Herstellung
DE1179646B (de) Flaechentransistor und Verfahren zu seiner Herstellung
DE2735937A1 (de) Verfahren zur herstellung von halbleiter-heterostrukturen
DE1213920B (de) Halbleiterbauelement mit fuenf Zonen abwechselnden Leitfaehigkeitstyps
DE3751781T2 (de) Festkörper-Elektronenstrahlerzeuger
DE1539606A1 (de) Elektrolumineszentes Material
DE2430687C3 (de) Kaltemissionshalbleitervorrichtung
AT219097B (de) Tunnel-Diode und Verfahren zu ihrer Herstellung
DE1439674C3 (de) Steuerbares und schaltbares pn-Halbleiterbauelement für große elektrische Leistungen
DE2620980C2 (enExample)
DE1066283B (enExample)
DE1464319C3 (de) H albleite rvorrichtung
DE1127484B (de) Halbleiterkristalldiode mit flaechenhaftem PN-UEbergang ueber den ganzen Querschnitt des Halbleiterkoerpers und Verfahren zu ihrer Herstellung
DE1094883B (de) Flaechentransistor
DE2551035C3 (de) Logische Schaltung in Festkörpertechnik
DE69001016T2 (de) Verfahren zur herstellung von wolfram-antimon ohmischen kontakten mit niedrigem widerstand auf iii-iv halbleitermaterialien.
DE1295089B (de) Verfahren zum Herstellen einer Halbleiteranordnung, insbesondere eines Transistors
DE1185292B (de) Doppelhalbleiterbauelement mit einem Esaki-UEbergang und einem parallel geschalteten weiteren UEbergang
DE1297235B (de) Verfahren zur Herstellung eines Halbleiterbauelementes
DE1464696C (de) Verfahren zum Herstellen einer Esaki Diode, insbesondere mit einem Halbleiter korper aus Germanium
AT227776B (de) Tunneldiode, insbesondere zur Gleichrichtung kleiner Wechselspannungen