DE112023002546T5 - Halbleiter-lichtempfangselement - Google Patents

Halbleiter-lichtempfangselement Download PDF

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Publication number
DE112023002546T5
DE112023002546T5 DE112023002546.0T DE112023002546T DE112023002546T5 DE 112023002546 T5 DE112023002546 T5 DE 112023002546T5 DE 112023002546 T DE112023002546 T DE 112023002546T DE 112023002546 T5 DE112023002546 T5 DE 112023002546T5
Authority
DE
Germany
Prior art keywords
light
layer
semiconductor
absorbing layer
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112023002546.0T
Other languages
German (de)
English (en)
Inventor
Keiki TAGUCHI
Kenji Makino
Yoshiaki OHSHIGE
Hajime Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of DE112023002546T5 publication Critical patent/DE112023002546T5/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12123—Diode

Landscapes

  • Light Receiving Elements (AREA)
DE112023002546.0T 2022-06-03 2023-02-15 Halbleiter-lichtempfangselement Pending DE112023002546T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-091023 2022-06-03
JP2022091023A JP2023178009A (ja) 2022-06-03 2022-06-03 半導体受光素子
PCT/JP2023/005274 WO2023233720A1 (ja) 2022-06-03 2023-02-15 半導体受光素子

Publications (1)

Publication Number Publication Date
DE112023002546T5 true DE112023002546T5 (de) 2025-05-15

Family

ID=89026081

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112023002546.0T Pending DE112023002546T5 (de) 2022-06-03 2023-02-15 Halbleiter-lichtempfangselement

Country Status (5)

Country Link
JP (1) JP2023178009A (https=)
CN (1) CN119318223A (https=)
DE (1) DE112023002546T5 (https=)
GB (1) GB2634652A (https=)
WO (1) WO2023233720A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025117331A (ja) * 2024-01-30 2025-08-12 国立研究開発法人産業技術総合研究所 光電変換素子
CN120500122B (zh) * 2025-07-15 2025-11-25 中航光电科技股份有限公司 一种高速探测器芯片及其制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0567802A (ja) * 1991-09-09 1993-03-19 Sony Corp 半導体受光素子
JP2002158369A (ja) * 2000-11-17 2002-05-31 Fujitsu Ltd 半導体受光装置
JP2004247620A (ja) * 2003-02-17 2004-09-02 Yokogawa Electric Corp 半導体受光素子
JP5742344B2 (ja) * 2011-03-20 2015-07-01 富士通株式会社 受光素子、光受信器及び光受信モジュール
JP7056827B2 (ja) * 2018-05-09 2022-04-19 住友電工デバイス・イノベーション株式会社 光導波路型受光素子

Also Published As

Publication number Publication date
JP2023178009A (ja) 2023-12-14
GB202417733D0 (en) 2025-01-15
CN119318223A (zh) 2025-01-14
GB2634652A (en) 2025-04-16
WO2023233720A1 (ja) 2023-12-07

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