DE112022004044T5 - Halbleiterbauteil, elektronisches gerät, und fahrzeug - Google Patents

Halbleiterbauteil, elektronisches gerät, und fahrzeug Download PDF

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Publication number
DE112022004044T5
DE112022004044T5 DE112022004044.0T DE112022004044T DE112022004044T5 DE 112022004044 T5 DE112022004044 T5 DE 112022004044T5 DE 112022004044 T DE112022004044 T DE 112022004044T DE 112022004044 T5 DE112022004044 T5 DE 112022004044T5
Authority
DE
Germany
Prior art keywords
gate
voltage
electrode
less
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022004044.0T
Other languages
German (de)
English (en)
Inventor
Naoki Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE112022004044T5 publication Critical patent/DE112022004044T5/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K2005/00013—Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE112022004044.0T 2021-09-27 2022-06-28 Halbleiterbauteil, elektronisches gerät, und fahrzeug Pending DE112022004044T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-156468 2021-09-27
JP2021156468 2021-09-27
PCT/JP2022/025736 WO2023047745A1 (ja) 2021-09-27 2022-06-28 半導体装置、電子機器、車両

Publications (1)

Publication Number Publication Date
DE112022004044T5 true DE112022004044T5 (de) 2024-08-01

Family

ID=85720471

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022004044.0T Pending DE112022004044T5 (de) 2021-09-27 2022-06-28 Halbleiterbauteil, elektronisches gerät, und fahrzeug

Country Status (5)

Country Link
US (1) US20240235190A1 (https=)
JP (1) JPWO2023047745A1 (https=)
CN (1) CN118044120A (https=)
DE (1) DE112022004044T5 (https=)
WO (1) WO2023047745A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240297498A1 (en) * 2023-03-01 2024-09-05 Lisa Dräxlmaier GmbH Electronic circuit for the switching-off of semiconductor switches in the event of critical currents

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7795325B2 (ja) * 2021-10-28 2026-01-07 ローム株式会社 ゲート制御回路、半導体装置、電子機器、車両
US20240351570A1 (en) * 2023-04-19 2024-10-24 Sumitomo Wiring Systems, Ltd. Power Supply System Having A Shut-Off Circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017187785A1 (ja) 2016-04-28 2017-11-02 ローム株式会社 過電流保護回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6038166A (en) * 1998-04-01 2000-03-14 Invox Technology High resolution multi-bit-per-cell memory
JP6712199B2 (ja) * 2016-08-10 2020-06-17 ローム株式会社 過電流保護回路
CN109698614B (zh) * 2017-10-20 2021-02-26 台达电子企业管理（上海）有限公司 功率半导体开关的有源钳位电路及使用其的功率变流器
US10418912B2 (en) * 2017-12-21 2019-09-17 Silanna Asia Pte Ltd Power converter with active clamp
WO2020130141A1 (ja) * 2018-12-21 2020-06-25 ローム株式会社 半導体装置
WO2021024813A1 (ja) * 2019-08-02 2021-02-11 ローム株式会社 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017187785A1 (ja) 2016-04-28 2017-11-02 ローム株式会社 過電流保護回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240297498A1 (en) * 2023-03-01 2024-09-05 Lisa Dräxlmaier GmbH Electronic circuit for the switching-off of semiconductor switches in the event of critical currents
US12463418B2 (en) * 2023-03-01 2025-11-04 Lisa Dräxlmaier GmbH Electronic circuit for the switching-off of semiconductor switches in the event of critical currents

Also Published As

Publication number Publication date
WO2023047745A1 (ja) 2023-03-30
US20240235190A1 (en) 2024-07-11
JPWO2023047745A1 (https=) 2023-03-30
CN118044120A (zh) 2024-05-14

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