CN118044120A - 半导体装置、电子设备、车辆 - Google Patents

半导体装置、电子设备、车辆 Download PDF

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Publication number
CN118044120A
CN118044120A CN202280065007.4A CN202280065007A CN118044120A CN 118044120 A CN118044120 A CN 118044120A CN 202280065007 A CN202280065007 A CN 202280065007A CN 118044120 A CN118044120 A CN 118044120A
Authority
CN
China
Prior art keywords
gate
electrode
voltage
misfet
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280065007.4A
Other languages
English (en)
Chinese (zh)
Inventor
高桥直树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN118044120A publication Critical patent/CN118044120A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K2005/00013Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/64Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66Vertical DMOS [VDMOS] FETs
    • H10D30/668Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126Top-view geometrical layouts of the regions or the junctions
    • H10D62/127Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/111Field plates
    • H10D64/117Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN202280065007.4A 2021-09-27 2022-06-28 半导体装置、电子设备、车辆 Pending CN118044120A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-156468 2021-09-27
JP2021156468 2021-09-27
PCT/JP2022/025736 WO2023047745A1 (ja) 2021-09-27 2022-06-28 半導体装置、電子機器、車両

Publications (1)

Publication Number Publication Date
CN118044120A true CN118044120A (zh) 2024-05-14

Family

ID=85720471

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280065007.4A Pending CN118044120A (zh) 2021-09-27 2022-06-28 半导体装置、电子设备、车辆

Country Status (5)

Country Link
US (1) US20240235190A1 (https=)
JP (1) JPWO2023047745A1 (https=)
CN (1) CN118044120A (https=)
DE (1) DE112022004044T5 (https=)
WO (1) WO2023047745A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7795325B2 (ja) * 2021-10-28 2026-01-07 ローム株式会社 ゲート制御回路、半導体装置、電子機器、車両
DE102023105115A1 (de) * 2023-03-01 2024-09-05 Lisa Dräxlmaier GmbH Elektronische schaltung zum abschalten von halbleiterschaltern bei kritischen strömen
US20240351570A1 (en) * 2023-04-19 2024-10-24 Sumitomo Wiring Systems, Ltd. Power Supply System Having A Shut-Off Circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6038166A (en) * 1998-04-01 2000-03-14 Invox Technology High resolution multi-bit-per-cell memory
CN110768205B (zh) * 2016-04-28 2022-02-25 罗姆股份有限公司 过电流保护电路
JP6712199B2 (ja) * 2016-08-10 2020-06-17 ローム株式会社 過電流保護回路
CN109698614B (zh) * 2017-10-20 2021-02-26 台达电子企业管理(上海)有限公司 功率半导体开关的有源钳位电路及使用其的功率变流器
US10418912B2 (en) * 2017-12-21 2019-09-17 Silanna Asia Pte Ltd Power converter with active clamp
WO2020130141A1 (ja) * 2018-12-21 2020-06-25 ローム株式会社 半導体装置
WO2021024813A1 (ja) * 2019-08-02 2021-02-11 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
WO2023047745A1 (ja) 2023-03-30
US20240235190A1 (en) 2024-07-11
JPWO2023047745A1 (https=) 2023-03-30
DE112022004044T5 (de) 2024-08-01

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