DE112022003051T5 - Isolationsmodul - Google Patents

Isolationsmodul Download PDF

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Publication number
DE112022003051T5
DE112022003051T5 DE112022003051.8T DE112022003051T DE112022003051T5 DE 112022003051 T5 DE112022003051 T5 DE 112022003051T5 DE 112022003051 T DE112022003051 T DE 112022003051T DE 112022003051 T5 DE112022003051 T5 DE 112022003051T5
Authority
DE
Germany
Prior art keywords
light
receiving element
plastic
emitting element
receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112022003051.8T
Other languages
German (de)
English (en)
Inventor
Masahiko ARIMURA
Tomoichiro Toyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE112022003051T5 publication Critical patent/DE112022003051T5/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/26—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
DE112022003051.8T 2021-06-14 2022-06-14 Isolationsmodul Withdrawn DE112022003051T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021098854 2021-06-14
JP2021-098854 2021-06-14
PCT/JP2022/023702 WO2022264982A1 (ja) 2021-06-14 2022-06-14 絶縁モジュール

Publications (1)

Publication Number Publication Date
DE112022003051T5 true DE112022003051T5 (de) 2024-04-04

Family

ID=84526502

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022003051.8T Withdrawn DE112022003051T5 (de) 2021-06-14 2022-06-14 Isolationsmodul

Country Status (5)

Country Link
US (1) US20240113239A1 (https=)
JP (1) JPWO2022264982A1 (https=)
CN (1) CN117501459A (https=)
DE (1) DE112022003051T5 (https=)
WO (1) WO2022264982A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026023536A1 (ja) * 2024-07-26 2026-01-29 ローム株式会社 半導体装置および半導体装置アッセンブリ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9000675B2 (en) 2010-09-21 2015-04-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Transmitting and receiving digital and analog signals across an isolator

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584470B2 (ja) * 1975-04-02 1983-01-26 株式会社日立製作所 ヒカリケツゴウハンドウタイソウチ オヨビ ソノセイホウ
JP3816114B2 (ja) * 1993-01-18 2006-08-30 シャープ株式会社 光結合装置
JP3418664B2 (ja) * 1996-11-29 2003-06-23 シャープ株式会社 複数型光結合素子及びその製造方法
JPH11163391A (ja) * 1997-11-29 1999-06-18 New Japan Radio Co Ltd 光半導体装置
JP2003124437A (ja) * 2001-10-19 2003-04-25 Mitsubishi Electric Corp 半導体装置
US7736070B2 (en) * 2005-08-31 2010-06-15 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Double mold optocoupler
US7973393B2 (en) * 2009-02-04 2011-07-05 Fairchild Semiconductor Corporation Stacked micro optocouplers and methods of making the same
EP2677539B1 (en) * 2011-02-15 2017-07-05 Panasonic Intellectual Property Management Co., Ltd. Process for manufacture of a semiconductor device
JP2013065717A (ja) * 2011-09-16 2013-04-11 Toshiba Corp 半導体装置およびその製造方法
JP2013175561A (ja) * 2012-02-24 2013-09-05 Toshiba Corp 光結合装置
JP2015035439A (ja) * 2013-08-07 2015-02-19 ルネサスエレクトロニクス株式会社 光結合装置及び光結合装置の製造方法
JP5956968B2 (ja) * 2013-09-13 2016-07-27 株式会社東芝 受光素子および光結合型信号絶縁装置
JP2017147364A (ja) * 2016-02-18 2017-08-24 株式会社東芝 半導体モジュール
DE102016109901A1 (de) * 2016-05-30 2017-11-30 Osram Opto Semiconductors Gmbh Lichtquelle
JP6222325B2 (ja) * 2016-10-06 2017-11-01 日亜化学工業株式会社 発光装置
JP2019012713A (ja) * 2017-06-29 2019-01-24 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9000675B2 (en) 2010-09-21 2015-04-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Transmitting and receiving digital and analog signals across an isolator

Also Published As

Publication number Publication date
CN117501459A (zh) 2024-02-02
WO2022264982A1 (ja) 2022-12-22
US20240113239A1 (en) 2024-04-04
JPWO2022264982A1 (https=) 2022-12-22

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Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0031120000

Ipc: H10F0055000000

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee