JPWO2022264982A1 - - Google Patents

Info

Publication number
JPWO2022264982A1
JPWO2022264982A1 JP2023529873A JP2023529873A JPWO2022264982A1 JP WO2022264982 A1 JPWO2022264982 A1 JP WO2022264982A1 JP 2023529873 A JP2023529873 A JP 2023529873A JP 2023529873 A JP2023529873 A JP 2023529873A JP WO2022264982 A1 JPWO2022264982 A1 JP WO2022264982A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023529873A
Other languages
Japanese (ja)
Other versions
JPWO2022264982A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022264982A1 publication Critical patent/JPWO2022264982A1/ja
Publication of JPWO2022264982A5 publication Critical patent/JPWO2022264982A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/26Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18Modifications for indicating state of switch
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
JP2023529873A 2021-06-14 2022-06-14 Pending JPWO2022264982A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021098854 2021-06-14
PCT/JP2022/023702 WO2022264982A1 (ja) 2021-06-14 2022-06-14 絶縁モジュール

Publications (2)

Publication Number Publication Date
JPWO2022264982A1 true JPWO2022264982A1 (https=) 2022-12-22
JPWO2022264982A5 JPWO2022264982A5 (https=) 2024-03-18

Family

ID=84526502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023529873A Pending JPWO2022264982A1 (https=) 2021-06-14 2022-06-14

Country Status (5)

Country Link
US (1) US20240113239A1 (https=)
JP (1) JPWO2022264982A1 (https=)
CN (1) CN117501459A (https=)
DE (1) DE112022003051T5 (https=)
WO (1) WO2022264982A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026023536A1 (ja) * 2024-07-26 2026-01-29 ローム株式会社 半導体装置および半導体装置アッセンブリ

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584470B2 (ja) * 1975-04-02 1983-01-26 株式会社日立製作所 ヒカリケツゴウハンドウタイソウチ オヨビ ソノセイホウ
JP3816114B2 (ja) * 1993-01-18 2006-08-30 シャープ株式会社 光結合装置
JP3418664B2 (ja) * 1996-11-29 2003-06-23 シャープ株式会社 複数型光結合素子及びその製造方法
JPH11163391A (ja) * 1997-11-29 1999-06-18 New Japan Radio Co Ltd 光半導体装置
JP2003124437A (ja) * 2001-10-19 2003-04-25 Mitsubishi Electric Corp 半導体装置
US7736070B2 (en) * 2005-08-31 2010-06-15 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Double mold optocoupler
US7973393B2 (en) * 2009-02-04 2011-07-05 Fairchild Semiconductor Corporation Stacked micro optocouplers and methods of making the same
US9000675B2 (en) 2010-09-21 2015-04-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Transmitting and receiving digital and analog signals across an isolator
EP2677539B1 (en) * 2011-02-15 2017-07-05 Panasonic Intellectual Property Management Co., Ltd. Process for manufacture of a semiconductor device
JP2013065717A (ja) * 2011-09-16 2013-04-11 Toshiba Corp 半導体装置およびその製造方法
JP2013175561A (ja) * 2012-02-24 2013-09-05 Toshiba Corp 光結合装置
JP2015035439A (ja) * 2013-08-07 2015-02-19 ルネサスエレクトロニクス株式会社 光結合装置及び光結合装置の製造方法
JP5956968B2 (ja) * 2013-09-13 2016-07-27 株式会社東芝 受光素子および光結合型信号絶縁装置
JP2017147364A (ja) * 2016-02-18 2017-08-24 株式会社東芝 半導体モジュール
DE102016109901A1 (de) * 2016-05-30 2017-11-30 Osram Opto Semiconductors Gmbh Lichtquelle
JP6222325B2 (ja) * 2016-10-06 2017-11-01 日亜化学工業株式会社 発光装置
JP2019012713A (ja) * 2017-06-29 2019-01-24 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
CN117501459A (zh) 2024-02-02
DE112022003051T5 (de) 2024-04-04
WO2022264982A1 (ja) 2022-12-22
US20240113239A1 (en) 2024-04-04

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Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231130