DE112022000793T5 - Aluminium-bondingdraht für leistungshalbleiter - Google Patents

Aluminium-bondingdraht für leistungshalbleiter Download PDF

Info

Publication number
DE112022000793T5
DE112022000793T5 DE112022000793.1T DE112022000793T DE112022000793T5 DE 112022000793 T5 DE112022000793 T5 DE 112022000793T5 DE 112022000793 T DE112022000793 T DE 112022000793T DE 112022000793 T5 DE112022000793 T5 DE 112022000793T5
Authority
DE
Germany
Prior art keywords
wire
aluminum
mass
less
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022000793.1T
Other languages
German (de)
English (en)
Inventor
Shuichi Mitoma
Tsukasa ICHIKAWA
Tsuyoshi Uraji
Tatsunori YANAGIMOTO
Dai Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Electronics Co Ltd Yoshinogari Cho Jp
Mitsubishi Electric Corp
Original Assignee
Tanaka Denshi Kogyo KK
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK, Mitsubishi Electric Corp filed Critical Tanaka Denshi Kogyo KK
Publication of DE112022000793T5 publication Critical patent/DE112022000793T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0211—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in cutting
    • B23K35/0216—Rods, electrodes or wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950°C
    • B23K35/286—Al as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/002—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working by rapid cooling or quenching; cooling agents used therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07552—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Wire Bonding (AREA)
DE112022000793.1T 2021-01-28 2022-01-25 Aluminium-bondingdraht für leistungshalbleiter Pending DE112022000793T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021011625 2021-01-28
JP2021-011625 2021-01-28
PCT/JP2022/002523 WO2022163606A1 (ja) 2021-01-28 2022-01-25 パワー半導体用アルミニウムボンディングワイヤ

Publications (1)

Publication Number Publication Date
DE112022000793T5 true DE112022000793T5 (de) 2023-11-30

Family

ID=82654564

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022000793.1T Pending DE112022000793T5 (de) 2021-01-28 2022-01-25 Aluminium-bondingdraht für leistungshalbleiter

Country Status (7)

Country Link
US (1) US20240105667A1 (https=)
JP (1) JP7573051B2 (https=)
KR (1) KR20230116044A (https=)
CN (1) CN116848623A (https=)
DE (1) DE112022000793T5 (https=)
TW (1) TWI854187B (https=)
WO (1) WO2022163606A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025028382A1 (ja) 2023-07-31 2025-02-06 田中電子工業株式会社 アルミニウム配線材及びその製造方法
JPWO2025028381A1 (https=) 2023-07-31 2025-02-06
WO2025211239A1 (ja) * 2024-04-03 2025-10-09 日鉄マイクロメタル株式会社 Ａｌボンディングワイヤ
CN121023316B (zh) * 2025-10-28 2026-01-13 烟台一诺电子材料有限公司 一种集成电路封装用键合铝丝及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020184655A1 (ja) 2019-03-13 2020-09-17 日鉄マイクロメタル株式会社 Ａｌボンディングワイヤ

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3353073A (en) * 1964-09-10 1967-11-14 Nippon Electric Co Magnesium-aluminum alloy contacts for semiconductor devices
KR100723454B1 (ko) * 2004-08-21 2007-05-30 페어차일드코리아반도체 주식회사 높은 열 방출 능력을 구비한 전력용 모듈 패키지 및 그제조방법
TWI237334B (en) * 2002-04-05 2005-08-01 Nippon Steel Corp A gold bonding wire for a semiconductor device and a method for producing the same
JP2011252185A (ja) * 2010-05-31 2011-12-15 Fujikura Ltd Ａｌ合金導電線
JP2011253950A (ja) * 2010-06-02 2011-12-15 Mitsubishi Electric Corp 電力半導体装置
CN103003456B (zh) * 2010-07-15 2015-06-10 古河电气工业株式会社 铝合金导体
TWI455217B (zh) * 2011-12-27 2014-10-01 萬國半導體開曼股份有限公司 應用在功率半導體元器件中的鋁合金引線框架
JP6090721B2 (ja) * 2012-05-29 2017-03-08 国立大学法人茨城大学 パワー半導体用アルミニウムワイヤ及び該アルミニウムワイヤを用いた半導体装置、並びに該アルミニウムワイヤの探索方法
JP5159000B1 (ja) 2012-06-13 2013-03-06 田中電子工業株式会社 半導体装置接続用アルミニウム合金細線
JP5281191B1 (ja) * 2012-12-28 2013-09-04 田中電子工業株式会社 パワ−半導体装置用アルミニウム合金細線
JP6368087B2 (ja) * 2013-12-26 2018-08-01 住友電気工業株式会社 アルミニウム合金線材、アルミニウム合金線材の製造方法、及びアルミニウム合金部材
EP3363025B1 (en) * 2015-10-14 2021-12-08 General Cable Technologies Corporation Cables and wires having conductive elements formed from improved aluminum-zirconium alloys
TWI581273B (zh) * 2015-11-30 2017-05-01 財團法人金屬工業研究發展中心 鋁合金導線及其製造方法
JP6927685B2 (ja) * 2016-10-25 2021-09-01 矢崎総業株式会社 アルミニウム素線、並びにそれを用いたアルミニウム電線及びワイヤーハーネス
EP3778947B1 (en) * 2018-03-27 2025-08-20 Furukawa Electric Co., Ltd. Aluminum alloy material, and conductive member, battery member, fastening part, spring part, and structural part using aluminum alloy material
JP7126322B2 (ja) 2018-10-10 2022-08-26 日鉄マイクロメタル株式会社 Ａｌボンディングワイヤ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020184655A1 (ja) 2019-03-13 2020-09-17 日鉄マイクロメタル株式会社 Ａｌボンディングワイヤ

Also Published As

Publication number Publication date
JPWO2022163606A1 (https=) 2022-08-04
WO2022163606A1 (ja) 2022-08-04
CN116848623A (zh) 2023-10-03
TWI854187B (zh) 2024-09-01
TW202232691A (zh) 2022-08-16
KR20230116044A (ko) 2023-08-03
JP7573051B2 (ja) 2024-10-24
US20240105667A1 (en) 2024-03-28

Similar Documents

Publication Publication Date Title
DE112022000793T5 (de) Aluminium-bondingdraht für leistungshalbleiter
DE112017003058B4 (de) Kupferlegierungs-Bonddrähte für Halbleiterbauteile
DE112016000133B4 (de) Bonddraht für Halbleitervorrichtung
CN101899587B (zh) 电气电子零件用铜合金板
CN101466856B (zh) 电气电子零件用铜合金板
DE112011100481T5 (de) Weiches verdünntes Kupferlegierungsmaterial, Draht aus weicher verdünnter Kupferlegierung, Folie aus weicher verdünnter Kupferlegierung, Litzendraht aus weicher verdünnter Kupferlegierung, sowie ein diese verwendendes Kabel, Koaxialkabel und gemischtadriges Kabel
DE102011013399B4 (de) Hochfestes Kupferlegierungsmaterial mit hoher Wärmebeständigkeit
DE112016006777B4 (de) Halbleitereinheit und Verfahren zur Herstellung derselben
DE112015003683T5 (de) Kupferlegierungsdraht, Kupferlegierungslitze, bedeckter elektrischer Draht und mit Klemme versehener elektrischer Draht
JP5610643B2 (ja) Ｃｕ−Ｎｉ−Ｓｉ系銅合金条及びその製造方法
DE112022002498T5 (de) Bonddraht für Halbleitervorrichtungen
JP2013213237A (ja) Ｃｕ−Ｚｎ−Ｓｎ−Ｎｉ−Ｐ系合金
JP2013194246A (ja) 残留応力の少ないリードフレーム用Ｃｕ−Ｃｒ−Ｓｎ系銅合金板
DE112022001995T5 (de) Bonddraht für Halbleitervorrichtungen
KR102349545B1 (ko) 구리 합금 선봉재 및 그 제조 방법
DE112023005086T5 (de) Al-Legierungs-Bonddraht
DE102017209678A1 (de) Elektrischer Aluminiumlegierung-Draht und Fahrzeug-Kabelbaum, der selbigen verwendet
DE102006010760B4 (de) Kupferlegierung und Verfahren zur Herstellung derselben
JP4859238B2 (ja) 高強度高導電性耐熱銅合金箔
JP2021138998A (ja) 銅合金材およびその製造方法
CN110573635B (zh) 铜合金板材及其制造方法
JP6730784B2 (ja) 電子部品用Ｃｕ−Ｎｉ−Ｃｏ−Ｓｉ合金
DE112019004184T5 (de) Bedeckter elektrischer Draht, mit Anschluss ausgerüsteter elektrischer Draht, Kupferlegierungsdraht, Kupferlegierungslitze und Verfahren zur Herstellung eines Kupferlegierungsdrahtes
JP5048046B2 (ja) 電子機器用銅合金
JP2006206988A (ja) 電子機器用銅合金

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R081 Change of applicant/patentee

Owner name: MITSUBISHI ELECTRIC CORPORATION, JP

Free format text: FORMER OWNERS: MITSUBISHI ELECTRIC CORPORATION, TOKYO, JP; TANAKA DENSHI KOGYO K.K., YOSHINOGARI-CHO, SAGA, JP

Owner name: TANAKA ELECTRONICS CO., LTD., YOSHINOGARI-CHO, JP

Free format text: FORMER OWNERS: MITSUBISHI ELECTRIC CORPORATION, TOKYO, JP; TANAKA DENSHI KOGYO K.K., YOSHINOGARI-CHO, SAGA, JP

R082 Change of representative

Representative=s name: MAIWALD GMBH, DE

R081 Change of applicant/patentee

Owner name: MITSUBISHI ELECTRIC CORPORATION, JP

Free format text: FORMER OWNERS: MITSUBISHI ELECTRIC CORPORATION, TOKYO, JP; TANAKA ELECTRONICS CO., LTD., YOSHINOGARI-CHO, SAGA, JP

Owner name: TANAKA ELECTRONICS CO., LTD., YOSHINOGARI-CHO, JP

Free format text: FORMER OWNERS: MITSUBISHI ELECTRIC CORPORATION, TOKYO, JP; TANAKA ELECTRONICS CO., LTD., YOSHINOGARI-CHO, SAGA, JP