DE112020002379A5 - Beleuchtungseinheit, verfahren zur herstellung einer beleuchtungseinheit, konverterelement für einoptoelektronisches bauelement, strahlungsquelle mit einer led und einem konverterelement, auskoppelstruktur, und optoelektronische vorrichtung - Google Patents

Beleuchtungseinheit, verfahren zur herstellung einer beleuchtungseinheit, konverterelement für einoptoelektronisches bauelement, strahlungsquelle mit einer led und einem konverterelement, auskoppelstruktur, und optoelektronische vorrichtung Download PDF

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Publication number
DE112020002379A5
DE112020002379A5 DE112020002379.6T DE112020002379T DE112020002379A5 DE 112020002379 A5 DE112020002379 A5 DE 112020002379A5 DE 112020002379 T DE112020002379 T DE 112020002379T DE 112020002379 A5 DE112020002379 A5 DE 112020002379A5
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DE
Germany
Prior art keywords
lighting unit
converter element
led
manufacturing
radiation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112020002379.6T
Other languages
English (en)
Inventor
Laura Kreiner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/EP2020/052191 external-priority patent/WO2020157149A1/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112020002379A5 publication Critical patent/DE112020002379A5/de
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
    • G01B11/2513—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object with several lines being projected in more than one direction, e.g. grids, patterns
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
    • G02B27/0922—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers the semiconductor light source comprising an array of light emitters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/30—Collimators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Optical Filters (AREA)
  • Polarising Elements (AREA)
DE112020002379.6T 2019-05-14 2020-05-14 Beleuchtungseinheit, verfahren zur herstellung einer beleuchtungseinheit, konverterelement für einoptoelektronisches bauelement, strahlungsquelle mit einer led und einem konverterelement, auskoppelstruktur, und optoelektronische vorrichtung Pending DE112020002379A5 (de)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
DE102019112639 2019-05-14
DE102019112639.8 2019-05-14
DE102019112616 2019-05-14
DE102019112616.9 2019-05-14
DE102019115991.1 2019-06-12
DE102019115991 2019-06-12
DE102019116313 2019-06-14
DE102019116313.7 2019-06-14
DE102019118251 2019-07-05
DE102019118251.4 2019-07-05
PCT/EP2020/052191 WO2020157149A1 (de) 2019-01-29 2020-01-29 µ-LED, µ-LED ANORDNUNG, DISPLAY UND VERFAHREN ZU SELBEN
EPPCT/EP2020/052191 2020-01-29
PCT/EP2020/063405 WO2020229576A2 (de) 2019-05-14 2020-05-14 Beleuchtungseinheit, verfahren zur herstellung einer beleuchtungseinheit, konverterelement für ein opto-elektronisches bauelement, strahlungsquelle mit einer led und einem konverterelement, auskoppelstruktur, und optoelektronische vorrichtung

Publications (1)

Publication Number Publication Date
DE112020002379A5 true DE112020002379A5 (de) 2022-01-27

Family

ID=70613800

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112020002379.6T Pending DE112020002379A5 (de) 2019-05-14 2020-05-14 Beleuchtungseinheit, verfahren zur herstellung einer beleuchtungseinheit, konverterelement für einoptoelektronisches bauelement, strahlungsquelle mit einer led und einem konverterelement, auskoppelstruktur, und optoelektronische vorrichtung

Country Status (6)

Country Link
US (1) US20220197041A1 (de)
JP (1) JP2022532642A (de)
KR (1) KR20220009426A (de)
CN (1) CN114127966A (de)
DE (1) DE112020002379A5 (de)
WO (1) WO2020229576A2 (de)

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829905B2 (en) * 2006-09-07 2010-11-09 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Semiconductor light emitting device
US7808005B1 (en) * 2007-04-26 2010-10-05 Hewlett-Packard Development Company, L.P. Light-emitting device with photonic grating configured for extracting light from light-emitting structure
JP2010171376A (ja) * 2008-12-26 2010-08-05 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
GB0902569D0 (en) * 2009-02-16 2009-04-01 Univ Southampton An optical device
CN102341740B (zh) * 2009-06-22 2015-09-16 财团法人工业技术研究院 发光单元阵列、其制造方法和投影设备
KR101020998B1 (ko) * 2009-11-12 2011-03-09 엘지이노텍 주식회사 발광소자 및 그 제조방법
DE102009057780A1 (de) * 2009-12-10 2011-06-16 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und photonischer Kristall
EP2477240A1 (de) * 2011-01-18 2012-07-18 Koninklijke Philips Electronics N.V. Beleuchtungsvorrichtung
KR20130022595A (ko) * 2011-08-25 2013-03-07 서울옵토디바이스주식회사 고전류 구동용 발광 소자
KR20130052944A (ko) * 2011-11-14 2013-05-23 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
JP2013197309A (ja) * 2012-03-19 2013-09-30 Toshiba Corp 発光装置
KR20140138886A (ko) * 2012-04-13 2014-12-04 아사히 가세이 이-매터리얼즈 가부시키가이샤 반도체 발광 소자용 광추출체 및 발광 소자
CN103474531B (zh) * 2012-06-07 2016-04-13 清华大学 发光二极管
EP2986082A4 (de) * 2013-04-12 2016-05-11 Panasonic Ip Man Co Ltd Lichtemittierende vorrichtung
BR112015030722A2 (pt) * 2013-06-10 2017-07-25 Asahi Kasei E Mat Corporation aparelho emissor de luz semicondutor
KR102204214B1 (ko) * 2013-08-06 2021-01-25 루미리즈 홀딩 비.브이. 고체 상태 조명을 위한 플라즈모닉 결합 방출기들로부터의 향상된 방출
CN108291983B (zh) * 2015-09-23 2020-10-23 奥斯兰姆奥普托半导体有限责任公司 准直超透镜和融合准直超透镜的技术
EP3226042B1 (de) * 2016-03-30 2022-05-04 Samsung Electronics Co., Ltd. Strukturierter lichtgenerator und objekterkennungsvorrichtung damit
US10996451B2 (en) * 2017-10-17 2021-05-04 Lumileds Llc Nanostructured meta-materials and meta-surfaces to collimate light emissions from LEDs

Also Published As

Publication number Publication date
CN114127966A (zh) 2022-03-01
US20220197041A1 (en) 2022-06-23
WO2020229576A3 (de) 2021-01-07
KR20220009426A (ko) 2022-01-24
WO2020229576A2 (de) 2020-11-19
JP2022532642A (ja) 2022-07-15

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