DE112019007938T5 - Halbleitereinheit, leistungwandlereinheit und verfahren zum herstellen einer halbleitereinheit - Google Patents

Halbleitereinheit, leistungwandlereinheit und verfahren zum herstellen einer halbleitereinheit Download PDF

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Publication number
DE112019007938T5
DE112019007938T5 DE112019007938.7T DE112019007938T DE112019007938T5 DE 112019007938 T5 DE112019007938 T5 DE 112019007938T5 DE 112019007938 T DE112019007938 T DE 112019007938T DE 112019007938 T5 DE112019007938 T5 DE 112019007938T5
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Prior art keywords
resin member
conductive wire
convex portion
front electrode
semiconductor
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DE112019007938.7T
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German (de)
English (en)
Inventor
Haruko Hitomi
Kozo Harada
Ken Sakamoto
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of DE112019007938T5 publication Critical patent/DE112019007938T5/de
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    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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    • H01L2924/176—Material
    • H01L2924/177—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/17717—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C
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    • H01L2924/181—Encapsulation
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
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JPH06120284A (ja) * 1992-10-05 1994-04-28 Toyota Motor Corp 半導体装置
JPH08274234A (ja) * 1995-03-30 1996-10-18 Hitachi Ltd 半導体装置およびその製造方法並びに半導体実装モジュール
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