DE112017006974T5 - Konverter für ionisierende Strahlung mit einer Netzstruktur sowie Verfahren zu seiner Herstellung - Google Patents
Konverter für ionisierende Strahlung mit einer Netzstruktur sowie Verfahren zu seiner Herstellung Download PDFInfo
- Publication number
- DE112017006974T5 DE112017006974T5 DE112017006974.2T DE112017006974T DE112017006974T5 DE 112017006974 T5 DE112017006974 T5 DE 112017006974T5 DE 112017006974 T DE112017006974 T DE 112017006974T DE 112017006974 T5 DE112017006974 T5 DE 112017006974T5
- Authority
- DE
- Germany
- Prior art keywords
- wafer
- horizontal
- converter
- junction
- top surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 230000005865 ionizing radiation Effects 0.000 title claims abstract description 6
- 238000000034 method Methods 0.000 title description 5
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 24
- 230000002285 radioactive effect Effects 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 230000000155 isotopic effect Effects 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 16
- 238000005516 engineering process Methods 0.000 abstract description 9
- 230000005611 electricity Effects 0.000 abstract description 6
- 239000003990 capacitor Substances 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 52
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000747 cardiac effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052722 tritium Inorganic materials 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010042618 Surgical procedure repeated Diseases 0.000 description 1
- 206010053615 Thermal burn Diseases 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
- G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2017103167A RU2659618C1 (ru) | 2017-01-31 | 2017-01-31 | Преобразователь ионизирующих излучений с сетчатой объемной структурой и способ его изготовления |
| RU2017103167 | 2017-01-31 | ||
| PCT/RU2017/000663 WO2018143838A1 (en) | 2017-01-31 | 2017-09-11 | Ionizing radiation converter with cross-linked structure and its fabrication method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112017006974T5 true DE112017006974T5 (de) | 2019-10-17 |
Family
ID=62815832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112017006974.2T Withdrawn DE112017006974T5 (de) | 2017-01-31 | 2017-09-11 | Konverter für ionisierende Strahlung mit einer Netzstruktur sowie Verfahren zu seiner Herstellung |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JP2020507073A (ko) |
| KR (1) | KR102595089B1 (ko) |
| CN (1) | CN110494929A (ko) |
| DE (1) | DE112017006974T5 (ko) |
| EA (1) | EA201900377A1 (ko) |
| RU (1) | RU2659618C1 (ko) |
| WO (1) | WO2018143838A1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113223743B (zh) * | 2021-05-08 | 2023-10-20 | 西北核技术研究所 | 一种基于微孔阵列准直器的α放射源核电池 |
| CN114203330B (zh) * | 2021-12-13 | 2024-09-10 | 中国核动力研究设计院 | 一种超薄镍-63辐射源及其制备方法、应用 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080199736A1 (en) | 2007-02-16 | 2008-08-21 | Gadeken Larry L | Apparatus for generating electrical current from radioactive material and method of making same |
| US20140225472A1 (en) | 2011-10-19 | 2014-08-14 | Xidian University | I-Layer Vanadium-Doped Pin Type Nuclear Battery and the Preparation Process Thereof |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01125988A (ja) * | 1987-11-11 | 1989-05-18 | Hitachi Ltd | 太陽電池素子の製造方法 |
| US5642014A (en) * | 1995-09-27 | 1997-06-24 | Lucent Technologies Inc. | Self-powered device |
| US20040154656A1 (en) * | 2003-02-10 | 2004-08-12 | Science & Technology Corporation @ Unm | Nuclear radiation fueled power cells |
| US7138701B2 (en) * | 2003-10-02 | 2006-11-21 | International Business Machines Corporation | Electrostatic discharge protection networks for triple well semiconductor devices |
| US7663288B2 (en) * | 2005-08-25 | 2010-02-16 | Cornell Research Foundation, Inc. | Betavoltaic cell |
| CN100414719C (zh) * | 2005-10-24 | 2008-08-27 | 西北工业大学 | 微电池及其制作方法 |
| US20100071751A1 (en) * | 2008-09-22 | 2010-03-25 | Electronics And Telecommunications Research Institute | Photo-induced metal-insulator-transition material complex for solar cell, solar cell and solar cell module comprising the same |
| RU2452060C2 (ru) * | 2010-05-27 | 2012-05-27 | Виталий Викторович Заддэ | Полупроводниковый преобразователь бета-излучения в электроэнергию |
| KR20120071241A (ko) * | 2010-12-22 | 2012-07-02 | 한국전자통신연구원 | 베타소스로부터 전류를 생성하는 적층형 베타전지 및 그 제작방법 |
| US10699820B2 (en) * | 2013-03-15 | 2020-06-30 | Lawrence Livermore National Security, Llc | Three dimensional radioisotope battery and methods of making the same |
| RU2539109C1 (ru) * | 2013-09-26 | 2015-01-10 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский технологический университет "МИСиС" | Многопереходный кремниевый монокристаллический преобразователь оптических и радиационных излучений |
| CN104051050A (zh) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | 并联式PIN型α辐照电池及其制备方法 |
| RU2608313C2 (ru) * | 2015-05-14 | 2017-01-17 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Высоковольтный преобразователь ионизирующих излучений и способ его изготовления |
| RU2608311C2 (ru) * | 2015-05-14 | 2017-01-17 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Преобразователь оптических и радиационных излучений и способ его изготовления |
| RU2605783C1 (ru) * | 2015-08-10 | 2016-12-27 | федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Тольяттинский государственный университет | Планарный высоковольтный фото- и бетавольтаический преобразователь и способ его изготовления |
| CN105448376B (zh) * | 2015-11-16 | 2017-11-03 | 长安大学 | 采用α放射源的碳化硅肖特基结型同位素电池及其制造方法 |
| RU168184U1 (ru) * | 2016-04-22 | 2017-01-23 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный аэрокосмический университет имени академика М.Ф. Решетнева" (СибГАУ) | Планарный преобразователь ионизирующих излучений с накопительным конденсатором |
-
2017
- 2017-01-31 RU RU2017103167A patent/RU2659618C1/ru active
- 2017-09-11 CN CN201780089174.1A patent/CN110494929A/zh active Pending
- 2017-09-11 DE DE112017006974.2T patent/DE112017006974T5/de not_active Withdrawn
- 2017-09-11 EA EA201900377A patent/EA201900377A1/ru unknown
- 2017-09-11 KR KR1020197024967A patent/KR102595089B1/ko active IP Right Grant
- 2017-09-11 WO PCT/RU2017/000663 patent/WO2018143838A1/en active Application Filing
- 2017-09-11 JP JP2019541228A patent/JP2020507073A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080199736A1 (en) | 2007-02-16 | 2008-08-21 | Gadeken Larry L | Apparatus for generating electrical current from radioactive material and method of making same |
| US20140225472A1 (en) | 2011-10-19 | 2014-08-14 | Xidian University | I-Layer Vanadium-Doped Pin Type Nuclear Battery and the Preparation Process Thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018143838A1 (en) | 2018-08-09 |
| KR20190109495A (ko) | 2019-09-25 |
| RU2659618C1 (ru) | 2018-07-03 |
| JP2020507073A (ja) | 2020-03-05 |
| CN110494929A (zh) | 2019-11-22 |
| EA201900377A1 (ru) | 2019-12-30 |
| KR102595089B1 (ko) | 2023-10-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R082 | Change of representative |
Representative=s name: FRIESE GOEDEN PATENTANWAELTE PARTGMBB, DE |
|
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |