DE112016004025T5 - Device for full-surface nano-embossing of a large wafer and associated embossing method - Google Patents

Abstract

The present invention discloses a device for whole-area nano-embossing of a large wafer and an associated embossing method. The device comprises an upper chamber body and a lower chamber body, wherein the lower chamber body is touched or separated from the upper chamber body by being displaced up and down by a first lifting mechanism, wherein an elastic embossing die is provided in the lowermost part of the upper chamber body and within the lower chamber, a wafer chuck is arranged horizontally, in the lower part of a second lifting mechanism is provided, wherein in the chamber wall of the upper chamber body flexibly connected to a pressure line air inlet opening of the upper chamber body, in the chamber wall of the lower chamber body with both a vacuum line as well as with the pressure line flexibly connected air inlet opening of the lower chamber body and in the wafer chuck connected to the vacuum line wafer chuck air inlet opening is formed, wherein the device further comprises an exposure source t. The present invention is advantageously characterized in that the present invention realizes an efficient and cost-effective mass production of a large-area micro-nanometer structure with an ultra-large, fragile and non-flat substrate, thus providing an industrial solution for the production of a large, wafer-based, large-scale micro-nanometer structure is provided.

Description

Field of the invention

The present invention relates to a device for whole-area nano-embossing of a large wafer and an associated embossing method, in particular a method for the efficient and cost-effective mass production of a large-area micro-nanometer structure and belongs to the field of producing micro-nanometer structures.

Technical background

As a novel technique for producing a micro-nanometer structure, nanoimprint lithography (NIL) over conventional projection lithography and future lithography technology is characterized by high definition, low cost (at NIL-like manufacturing process, at least an order of magnitude lower than conventional optical projection lithography the judgment by an international institution with authority) and high productivity, and advantageously by the ability to produce large-scale, complicated, three-dimensional micro-nanometer structure and patterning of a non-flat substrate, in particular the possibility of realizing wafer-level nanoimprinting on a non-flat surface (curved, curved or step-like structure), curved and fragile substrate using a soft UV nanoprinting process and the ability to continuously pattern g as in the roll stamping process. Whole-area wafer nanoprocessing allows for full-surface patterning of a single-step wafer (wafer-level patterning), and is advantageously characterized by high embossing efficiency, low cost, and avoiding mismatched patterns, which has broad application prospects and market potential Fields LED patterning, optical instruments at wafer level and high-resolution display panels ensures.

In the published patent CN 102096315 B Full Surface Wafer Nanoprints (Full Surface Nanoprinter of a Wafer and Related Embossing Method) and SUSS Full Surface Substrate Precision Lithography (SCIL) are followed by sequential microcontact embossing of a soft mold and wafer, and flaking enformation using an air valve plate allows switching of the positive and negative pressure to realize the full-surface wafer nanoprojects. However, such a method is characterized by complicated processes and structure, high production costs and difficult production of an air valve plate (processing difficulty / high cost of highly transparent quartz disks), which also has an inherent disadvantage in that the embossing surface is previously limited to a small wafer and a Wafer with a diameter of 6 inches a full-surface embossing is difficult to expect. Unfortunately, other existing full-surface wafer nanoimprinting techniques can realize the embossing step without realizing automatic demoulding, let alone flaking, demolding needed for large-area nanoimprinting.

In order to meet the growing demand for micro-nano patterning of large wafers in the fields of LED patterning, wafer-level optical instruments, and high-resolution display panels, it is urgently necessary to develop a new process and technique for whole-surface nanoprocessing of a large wafer. to remove the limitation on the nano-embossing of a wafer with a diameter of 8 inches and higher.

Disclosure of the invention

It is an object of the present invention to provide a device for whole-area nano-embossing of a large wafer and an associated embossing method for solving the problem of micro-nanopatterning a large wafer, thus providing efficient and inexpensive wafer-level patterning with a large substrate is realized.

According to the invention, the object is achieved by the following configuration:

An apparatus for whole-area nano-embossing of a large wafer, comprising an upper chamber body with an upper chamber disposed therein and a lower chamber body with a lower chamber disposed therein, wherein the lower chamber body by moving from a first lifting mechanism to the upper Chamber body is touched or separated, wherein in the lowest part of the upper chamber body provided an elastic shape for embossing and within the lower chamber, a wafer Chuck is arranged horizontally, in the lower part of a second lifting mechanism is provided, wherein in the chamber wall of the upper chamber body an air inlet opening of the upper chamber body flexibly connected to a pressure line, in the chamber wall of the lower chamber body a flexible air inlet opening of the lower chamber body and in the wafer Chuck egg both with a vacuum line and with the pressure line ne connected to the vacuum line Wafer Chuck air inlet opening is formed, wherein the device further comprises an exposure source. About the pressure line and the vacuum line embossing is made possible easily and inexpensively, with the help of a pressure difference, a continuous, flaking demolding starting from the outer edge of the wafer to its center is simple, inexpensive and efficiently realized, the low Entformkraft for a small Damage to the mold and embossing structure as well as prolonged mold life is provided and a vacuum environment for facilitating the suction of a wafer is established with the air inlet of the wafer chuck via the vacuum line.

It is further contemplated that the wafer chuck is mounted over a work platform within the lower chamber, which work platform vertically penetrates the center of the lower chamber body, the second lifting mechanism being attached to the midpoint of the work platform, and a wafer chuck upwards and is effected under the drive of the second lifting mechanism.

Furthermore, it is provided that a wafer is fixed on the wafer chuck, the surface of which is coated with an embossing material.

It is further contemplated that the form comprises, from top to bottom, in turn, a support layer and a pattern layer, the support layer being connected to the lower surface of the upper chamber body at an outer surface of its upper surface and a coupling agent material at the lower surface thereof Pattern layer is attached, whereby due to the elasticity of the mold applied a low embossing force, a good conformal contact of the mold and the wafer and a timely discharge trapped air bubbles are made possible in a large-scale embossing process.

It is further provided that a transparent glass pane is attached to the upper surface of the upper chamber body.

It is further provided that the exposure source is mounted above the upper chamber body, whereby a rapid and immediate curing of the embossing material is made possible.

It is further provided that the pattern layer is made of a transparent fluoropolymer material and has a thickness of 10 .mu.m to 50 .mu.m.

It is further provided that the support layer is made transparent and highly flexible and has a thickness of 100 .mu.m to 500 .mu.m.

An embossing method for the device for the whole-area nano-embossing of a large wafer, which concretely comprises the following use steps:

pretreatment process

Sucking a wafer, the surface of which is coated with an embossing material, by means of negative pressure on the wafer chuck and suction of the mold by means of negative pressure on the underside of the upper chamber body,

Driving the wafer chuck up the work platform by drive from the second lift mechanism until a gap of 1mm to 2mm forms between the upper surface of the wafer and the mold, and moving the lower chamber body upwardly through the first lift mechanism to ensure a complete abutment of the upper chamber body and the lower chamber body to each other,

embossing process

Vacuum sucking from the air inlet opening of the lower chamber body via a vacuum line to cause complete deformation of the mold, and stopping the vacuum suction when the arcuately bent and deformed mold touches the wafer at its lowest point,

Moving the wafer chuck up under drive from the second lifting mechanism until the mold is placed in a horizontal position,

Supplying air through the upper chamber body air inlet opening via the pressure line to allow uniform pressure to be applied to the entire wafer, and maintaining the pressure for a set time,

Releasing the connection between the pressure line and the air inlet opening of the upper chamber body, so that the air inlet opening of the upper chamber body is connected to the atmosphere and the mold gradually deforms back,

curing

Switching on the exposure source so that it illuminates the embossing material through the transparent glass pane and the mold to cure it, and switching off the exposure source after a set exposure time,

mold removal

Connecting the Air inlet opening of the lower chamber body with the atmosphere to release the negative pressure, and connecting the air inlet opening of the lower chamber body with the pressure line for introducing air, so that the shape and the embossing material on the surface of the wafer are gradually separated from each other, and stopping the air introduction when, under the action of a force upward, the shape deforms further and assumes an upward curved state,

Moving the wafer chuck down the drive from the second lift mechanism and returning to its home position;

Connecting the air inlet opening of the lower chamber body with the atmosphere,

Moving the lower chamber body down under drive from the first lifting mechanism and returning to its home position, removing the embossed wafer from above the lower chamber body, placing a new wafer, and initiating the next cycle of operation;

post-production operation

Isometric etching of the embossing material downwardly by a conventional anisotropic etching process, removing the residue layer, copying the micro-nanometer feature structure of the mold onto the embossing material,

Transferring the pattern layer to the wafer by means of an etching process (wet etching or dry etching) using the pattern on the embossing material as a mask to enable wafer-level patterning or, alternatively, transferring the pattern layer to another functional material Help a lift-off process to realize a patterning of a functional material.

It is further provided that in step 2) and 4) the embossing process and the Entformvorgang done using the center of the mold as the axis of symmetry, so that the shape receives a uniform and symmetrical force.

The present invention works according to the following working principle: by means of the conversion of the negative or positive pressure of the mold and the two chambers in combination with the displacement of the wafer chuck upwards and backwards, embossing with a sequential microcontact embossing of a soft mold and a wafer and a uniformly applied pressure, wherein after the curing, a flaking Enformung takes place and a feature pattern of the mold is copied and transferred in a single step on an embossed on the wafer embossing material, whereby a full-surface embossing of a large wafer is realized.

1. (1) Durch die enge Zusammenwirkung der oberen Kammer, der weichen Form, der unteren Kammer, der Arbeitsplattform und des Luftleitungssystem (Druck- und Vakuumleitung) wird ein ganzflächiges Nanoprägen eines großen Wafers ermöglicht und der Nachteil bei dem bestehenden Verfahren zum ganzflächigen Nanoprägen eines Wafers überwunden. Die vorliegende Erfindung zeichnet sich vorteilhafterweise durch einfachen Aufbau und Prozess, hohe Effizienz, geringe Kosten, hohe Genauigkeit geprägten Musters und geringen Mangel auf.
2. (2) Bei dem Prägevorgang nach der vorliegenden Erfindung wird durch eine Verschiebung der Arbeitsplattform nach oben die verkrümmte und verformte Form flach geschoben, um ein Prägen mit einem allmählichen sequentiellen Mikrokontakt und Aufbringen eines Drucks ausgehend von dem Mittelpunkt der Form in Richtung deren Außenrands zu ermöglichen, wobei vorteilhafterweise eine einfache Struktur, eine hohe Effizienz, eine geringe aufgebrachte Prägekraft, eine gute konforme Berührung der Form und des Wafers und die Möglichkeit zum rechtzeitigen Abführen der bei einem großflächigen Prägevorgang eingeschlossenen Luftblasen verwirklicht werden, womit das Problem zum Beseitigen von Luftblasen bei großflächigem Nanoprägen gelöst wird.
3. (3) Mit Hilfe einer weichen Form und eines gasunterstützt, gleichmäßig aufgebrachten Drucks werden eine großflächige, völlig konforme Berührung der Form und des Wafers und das gleichmäßige Aufbringen von Druck bei einem Prägevorgang eines großen, nicht flachen Wafers erzielt.
4. (4) Sowohl der Prägevorgang als auch der Härtungsvorgang erfolgen bei einer Vakuumumgebung, womit die bei einem großflächigen Nanoprägevorgang eingeschlossenen und erzeugten Luftblasen völlig beseitigt werden können, was zum Beseitigen des Mangels der Luftblasen bei einem großflächigen Nanoprägevorgang, einem vorteilhafterweise schnellen Härtungsvorgang des Prägematerials und einer erhöhten Prägeeffizienz beiträgt.
5. (5) Bei einem Prägevorgang wird ein durch die Form gleichmäßig auf den ganzen Wafer aufgebrachter Druck durch die Zusammenwirkung eines von dem positiven Druck der oberen Kammer nach unten auf die Form aufgebrachten gleichmäßigen Drucks mit einer von dem negativen Druck der unteren Kammer nach unten auf die Form aufgebrachten Vakuum-Ansaugkraft ermöglicht, wobei ein flüssiges, mittels von UV aushärtbares Prägematerial die Mikro-Nanometer-Merkmalstruktur der Form schnell und völlig ausfüllt, womit die Prägeeffizienz erhöht und der Mangel einer nicht völligen Füllung vermieden wird.
6. (6) Bei der vorliegenden Erfindung wird eine kontinuierliche, abblätternde Entformung ausgehend von dem äußeren Rand des Wafers bis zu dessen Mittelpunkt mit Hilfe einer Druckdifferenz der oberen und unteren Kammer verwirklicht, was vorteilhafterweise zu einer einfachen, kostengünstigen und effizienten Entformung, einer geringen Entformkraft mit weniger Beschädigung der Form und der Prägestruktur, einer verlängerten Lebensdauer der Form und einer erhöhten Zurückverformungs-Genauigkeit und Qualität beiträgt.
7. (7) Bei der Präge- und Entformvorgang nimmt die Form eine symmetrische und gleichmäßige Kraft auf und benötigt somit eine geringe Präge- und Entformkraft, was zu einer geringen Verformung und einer hohen Zurückverformungs-Genauigkeit der Form beiträgt.
8. (8) Der Prägevorgang und der Entformvorgang erfolgen symmetrisch relativ zu dem Mittelpunkt der Form und somit gleichzeitig auf beiden Seiten der Form, was für eine hohe Produktivität sorgt.
9. (9) Die vorliegende Erfindung ermöglicht eine effiziente und kostengünstige Serienfertigung einer großflächigen Mikro-Nanometerstruktur mit einem ultragroßen, zerbrechlichen und nicht flachen Substrat, womit eine industrietaugliche Lösung für die Herstellung einer großen, Wafer-basierten, großflächigen Mikro-Nanometerstruktur bereitgestellt wird.
10. (10) Die vorliegende Erfindung eignet sich für industrietaugliche Serienfertigung auf den Gebieten LED-Musterbildung, optische Instrumente auf Wafer-Ebene und hochauflösende Anzeigefelder, insbesondere für die Mikro-Nanometer-Musterbildung eines großen Wafers ohne zusammengefügtes Muster.

The present invention is advantageously characterized by the following effects:

1. (1) The close cooperation of the upper chamber, the soft mold, the lower chamber, the work platform, and the air duct system (pressure and vacuum piping) enables full-surface nanoprocessing of a large wafer, and the disadvantage of the existing method of whole-area nanoprocessing of a wafer overcome. The present invention is advantageously characterized by simple structure and process, high efficiency, low cost, high accuracy embossed pattern and low defect.
2. (2) In the embossing process of the present invention, shifting the work platform upward shifts the warped and deformed shape flat to permit embossing with a gradual sequential microcontact and application of pressure from the center of the mold toward its outer edge , wherein advantageously a simple structure, a high efficiency, a low applied embossing force, a good conformal contact of the mold and the wafer and the possibility of timely discharge of trapped in a large-scale embossing process air bubbles are realized, thus the problem of eliminating air bubbles in a large area Nanoprägen is solved.
3. (3) With the help of a soft mold and a gas-assisted, evenly applied pressure, a large-area, completely conformal contact of the mold and the wafer and the uniform application of pressure during a stamping process of a large, non-flat wafer are achieved.
4. (4) Both embossing and curing are performed in a vacuum environment, whereby the air bubbles trapped and generated in a large-area nanoimprinting process can be completely eliminated, eliminating the shortage of air bubbles in a large-area nanoimprinting process, an advantageously rapid curing process of the embossing material, and so on contributes to increased stamping efficiency.
5. (5) In an embossing operation, a pressure uniformly applied to the whole wafer by the mold is caused by the cooperation of a uniform pressure applied downward from the positive pressure of the upper chamber to the mold at a downward pressure from the negative pressure of the lower chamber Vacuum applied, whereby a liquid UV-curable embossing material Nanometer feature structure of the mold quickly and completely fills, which increases the embossing efficiency and the lack of a non-complete filling is avoided.
6. (6) In the present invention, a continuous, flaking demolding from the outer edge of the wafer to its center by means of a pressure difference of the upper and lower chamber realized, which advantageously for a simple, inexpensive and efficient demolding, a low Entformkraft with less damage to the mold and embossed structure, prolonged mold life, and increased re-deformation accuracy and quality.
7. (7) In the embossing and demolding operation, the mold takes on a symmetrical and uniform force and thus requires a small embossing and demoulding force, which contributes to a small deformation and a high back-deformation accuracy of the mold.
8. (8) The embossing operation and the demolding operation are symmetrical relative to the center of the mold and thus simultaneously on both sides of the mold, providing high productivity.
9. (9) The present invention enables efficient and inexpensive mass production of a large-area micro-nanometer structure with an ultra-large, fragile and non-flat substrate, thus providing an industry-ready solution for producing a large, wafer-based, large-scale micro-nanometer structure.
10. (10) The present invention is suitable for industrial mass production in the fields of LED patterning, wafer-level optical instruments, and high-resolution display panels, particularly for the micro-nanometer patterning of a large wafer without a mated pattern.

list of figures

• 1 eine Einrichtung zum ganzflächigen Nanoprägen eines großen Wafers nach der vorliegenden Erfindung in einer schematischen strukturellen Darstellung,
• 2 eine Form nach der vorliegenden Erfindung in einer schematischen strukturellen Darstellung,
• 3 einen Vorgang zum ganzflächigen Nanoprägen eines großen Wafers nach der vorliegenden Erfindung in einem Ablaufdiagramm,
• 4a einen Prozessschritt zum ganzflächigen Nanoprägen eines großen Wafers nach der vorliegenden Erfindung in einer schematischen Darstellung,
• 4b einen Prozessschritt zum ganzflächigen Nanoprägen eines großen Wafers nach der vorliegenden Erfindung in einer schematischen Darstellung,
• 4c einen Prozessschritt zum ganzflächigen Nanoprägen eines großen Wafers nach der vorliegenden Erfindung in einer schematischen Darstellung,
• 4d einen Prozessschritt zum ganzflächigen Nanoprägen eines großen Wafers nach der vorliegenden Erfindung in einer schematischen Darstellung,
• 4e einen Prozessschritt zum ganzflächigen Nanoprägen eines großen Wafers nach der vorliegenden Erfindung in einer schematischen Darstellung,
• 4f einen Prozessschritt zum ganzflächigen Nanoprägen eines großen Wafers nach der vorliegenden Erfindung in einer schematischen Darstellung,
• 4g einen Prozessschritt zum ganzflächigen Nanoprägen eines großen Wafers nach der vorliegenden Erfindung in einer schematischen Darstellung,
• 4h einen Prozessschritt zum ganzflächigen Nanoprägen eines großen Wafers nach der vorliegenden Erfindung in einer schematischen Darstellung,
• 4i einen Prozessschritt zum ganzflächigen Nanoprägen eines großen Wafers nach der vorliegenden Erfindung in einer schematischen Darstellung,
• 4j einen Prozessschritt zum ganzflächigen Nanoprägen eines großen Wafers nach der vorliegenden Erfindung in einer schematischen Darstellung,
• 4k einen Prozessschritt zum ganzflächigen Nanoprägen eines großen Wafers nach der vorliegenden Erfindung in einer schematischen Darstellung,

wobei die Bezugszeichen 1 für zweiten Hubmechanismus, 2 für ersten Hubmechanismus, 3 für unteren Kammerkörper, 4 für Wafer-Chuck, 5 für Wafer, 6 für Prägematerial, 7 für Dichtring, 8 für Form, 9 für oberen Kammerkörper, 10 für transparente Glasscheibe, 11 für Lichtquelle, 12 für Vakuumleitung, 13 für Druckleitung, 301 für Lufteintrittsöffnung des unteren Kammerkörpers, 801 für Musterschicht der Form, 80101 für Mikro-Nanometer-Merkmalstruktur der Form, 80102 für tiefsten Punkt der bogenförmig verbogene und verformte Form, 80103 für äußerste Seite der Form, 802 für Kopplungsmittel der Form, 803 für Stützschicht der Form, 901 für Bodenseite des oberen Kammerkörpers, 902 für Lufteintrittsöffnung des oberen Kammerkörpers, I für obere Kammer, II für untere Kammer, 14 für erste Prägeposition und 15 für zweite Prägeposition.Show it

• 1 a device for the whole-area nano-embossing of a large wafer according to the present invention in a schematic structural representation,
• 2 a mold according to the present invention in a schematic structural representation,
• 3 a process for the whole-area nano-embossing of a large wafer according to the present invention in a flow chart,
• 4a a process step for the entire surface nanoimprinting of a large wafer according to the present invention in a schematic representation,
• 4b a process step for the entire surface nanoimprinting of a large wafer according to the present invention in a schematic representation,
• 4c a process step for the entire surface nanoimprinting of a large wafer according to the present invention in a schematic representation,
• 4d a process step for the entire surface nanoimprinting of a large wafer according to the present invention in a schematic representation,
• 4e a process step for the entire surface nanoimprinting of a large wafer according to the present invention in a schematic representation,
• 4f a process step for the entire surface nanoimprinting of a large wafer according to the present invention in a schematic representation,
• 4g a process step for the entire surface nanoimprinting of a large wafer according to the present invention in a schematic representation,
• 4h a process step for the entire surface nanoimprinting of a large wafer according to the present invention in a schematic representation,
• 4i a process step for the entire surface nanoimprinting of a large wafer according to the present invention in a schematic representation,
• 4y a process step for the entire surface nanoimprinting of a large wafer according to the present invention in a schematic representation,
• 4k a process step for the entire surface nanoimprinting of a large wafer according to the present invention in a schematic representation,

the reference numbers 1 for second lifting mechanism, 2 for first lifting mechanism, 3 for lower chamber body, 4 for wafer chuck, 5 for wafers, 6 for embossing material, 7 for sealing ring, 8 for mold, 9 for upper chamber body, 10 for transparent glass pane, 11 for light source, 12 for vacuum line, 13 for pressure line, 301 for air inlet of lower chamber body, 801 for pattern layer of mold, 80101 for micro-nanometer feature structure of mold, 80102 for lowest point of arc bent and deformed form, 80103 for the outermost side of the mold, 802 for coupling means of the mold, 803 for supporting layer of the mold, 901 for bottom of the upper chamber body, 902 for upper chamber air inlet opening, I for upper chamber, II for lower chamber, 14 for first stamping position and 15 for second stamping position.

Concrete embodiments

Hereinafter, an embodiment of the present invention will be described clearly and completely with reference to accompanying drawings of the embodiment of the present invention.

1 shows a device for full-surface nanoprocessing of a large wafer according to the present invention in a schematic structural representation, the second lifting mechanism 1 , a first lifting mechanism 2 , a lower chamber body 3 , a wafer chuck 4 , a wafer 5 , an embossing material 6 , a sealing ring 7 , a form 8th , an upper chamber body 9 , a transparent glass pane (quartz glass) 10 , an exposure source 11 , a vacuum line 12 and a pressure line 13 comprising a work platform located at the lowest point of the center of the device and the lower chamber body 3 interspersed, wherein provided within the work platform, a second lifting mechanism and the wafer chuck 4 horizontally within the lower chamber body 3 is arranged, wherein the first lifting mechanism 2 below the lower chamber body 3 arranged and with the lowest part of the lower chamber body 3 connected, the wafer chuck 4 arranged on the work platform, the wafer 5 on the wafer chuck 4 arranged and by suction by means of vacuum on the wafer chuck 4 is attached, wherein the liquid, UV-curable embossing material 6 evenly on the wafer 5 is applied, the shape 8th by suction by means of negative pressure on the underside of the upper chamber body 9 attached and immediately above the wafer 5 is arranged with applied embossing material, wherein the upper chamber body 9 just above the mold 8th and the lower chamber body 3 and immediately below the exposure source 11 is arranged, wherein the transparent quartz glass pane 10 is disposed within the upper chamber body, the exposure source (UV light source) being 11 immediately above the upper chamber body 9 and the transparent glass pane 10 is arranged, wherein the sealing ring 7 on the bottom 901 the upper chamber body and the upper side of the lower chamber body 3 is arranged, the vacuum line 12 and the pressure line 13 with the air inlet opening 301 of the lower chamber body, the pressure line 12 with the air inlet opening 902 of the upper chamber body 9 and the vacuum line 11 with the air inlet opening of the wafer chuck 4 connected is.

The lower chamber body 3 , form 8th and the upper chamber body 9 (with the transparent glass pane 10 ) are by the form 8th divided into two closed chamber, the upper chamber body 9 an upper chamber I therein and the lower chamber body 3 a lower chamber II contained therein, between the lower chamber body 3 as well as the shape 8th or the upper chamber body 9 as well as the shape 8th one sealing ring each 7 is provided to ensure a complete seal of the upper chamber I and the lower chamber II during a stamping operation and to prevent air leakage.

2 shows the shape 8th according to the present invention in a schematic structural representation, which is a pattern layer 801 and a support layer 803 includes, wherein the pattern layer 801 has extremely low surface energy, high modulus of elasticity and high transparency, and a micro-nanometer feature pattern to be copied 80101 the mold comprises, wherein the support layer 803 characterized by transparency, high flexibility and a membrane structure, wherein the pattern layer 801 below the support layer 803 located. For the pattern layer 801 For example, h-PDMS, low surface energy and high modulus fluoropolymer, ETFE, etc., can be used while for the backing layer 803 PDMS, PET, PC and other materials of high elasticity and transparency can be used. The pattern layer has a thickness of 10 .mu.m to 50 .mu.m, wherein the pattern layer here specifically from a transparent fluoropolymer Teflon AF 1600 is made and has a thickness of 15μm, while the backing layer 803 has a thickness of 100μm to 500μm. The support layer 803 is surface modified or, alternatively, it is a transparent coupling agent material 802 applied.

For the shape 8th According to the present embodiment, a transparent, highly elastic PET film with a thickness of 150 .mu.m as a support layer 803 used as a coupling agent material 802 a transparent and colorless KH-550 material is used.

In the embodiment of the present invention, taking the example of a full-surface nanoimprinting process of an 8-inch LED (approximately 200 mm diameter) GaN-based photonic crystal (LED epi wafer micrometer patterning), reference will be made to FIGS full-surface nanoimprint process of a large wafer (eg 3 ) and schematic representations of the process steps of a full-surface nanopragment process of a large Wafers ( 4a to 4k ) on the principle and concrete process steps of the whole-area nanoimprint process of a large wafer.

Some concrete parameters for the wafer 5 , the form 8th and the nanoimprinting process of the embodiment are set as follows: as wafers 5 For example, a GaN-based 8-inch Epi wafer is used and a photonic crystal structure is to be formed by embossing on a P-type semiconductor layer, with the following geometric parameters being set for the photonic crystal: a lattice constant of 600 nm, a pore diameter of 200 nm and a Pore depth of 100nm. As embossing material 6 mr-XNIL26 from Micro Resist Technology is used and the spin coating of the GaN-based Epi wafer has a thickness of 300 nm.

The concrete process is as follows:

pretreatment process

Applying a liquid, UV-curable embossing material 6 (also known as etch ground, a light-curable, low viscosity polymer material) uniformly on a wafer 5 , Drop the wafer 5 on the wafer chuck 4 , Aspiration of the wafer 5 that with an embossing material 6 coated by means of negative pressure on the wafer chuck 4 , Placing the mold on the bottom 901 of the upper chamber body and attaching thereto by suction by means of negative pressure, as appears 4a results.

Moving the wafer chuck 5 under drive from the second lifting mechanism 1 starting from the starting position into a first embossing position 14 until there is a gap of 2mm between the wafer 5 and the shape 8th forms, moving the lower chamber body 3 through the first lifting mechanism 2 starting from the starting position in the first embossing position 14 for effecting complete closure of the upper chamber body 9 and the lower chamber body 3 , wherein under the action of one of the first lifting mechanism 2 Upwardly applied force in the embossing process a complete closure of the circumference of the upper chamber I and the lower chamber II is ensured to prevent leakage of air, as from 4b can be seen.

embossing process

1. 1. Connect the air inlet opening 301 the lower chamber body with a vacuum line to build in the lower chamber II a negative pressure environment, so that under the influence of a vacuum suction force the shape 8th bend and deform, and closing with the air inlet 301 the lower chamber body connected vacuum line 12 when the arcuate bent and deformed shape at its lowest point 80102 the wafer 5 touched, as turned out 4c reveals
2. 2. Move the wafer chuck 4 and the wafer 5 upwards under drive in front of work platform 1 , Lifting the wafer chuck 4 and the wafer 5 from the first stamping position 14 to the second embossing position 15 (The entire mold is placed in a horizontal position to sequentially microcontact embossing from the center of the wafer 5 towards its outer edge and a complete conformal touch of the wafer 5 with the form 8th to enable, as out 4d it can be seen
3. 3. Connect the air inlet opening 902 of the upper chamber body with a pressure line 13 to initiate an air supply operation so that a positive pressure environment is built up in the upper chamber, whereby an impression pressure applied to the mold uniformly downwards by the positive pressure of the upper chamber I coincides with that produced by the negative pressure of the lower chamber II down on the form 8th applied vacuum suction force applying a uniform pressure through the mold 8th on the whole wafer 5 to allow the liquid, by means of UV-curable embossing material 6 quickly and completely into the micro-nanometer feature structure 80101 the shape is filled, as is 4e reveals
4. 4. Close the pressure line 13 the air inlet opening 902 the upper chamber body after maintaining the pressure for 3s, connecting the air inlet opening 902 of the upper chamber body with the atmosphere, so that in the upper chamber I, a normal pressure (atmospheric pressure) is built up and the shape 8th completely deformed under pressure, as if from 4f it can be seen

curing

1. 1. Turn on the exposure source 11 so that the UV light source is above the transparent glass 10 and the shape 8th the embossing material 6 exposed to its curing,
2. 2. Turn off the exposure source 11 After expiration of an exposure time of 5s and complete curing of the embossing material 6 , as out 4g reveals

mold removal

1. 1. Connect the air inlet opening 301 the lower chamber body with the atmosphere to release the negative pressure, connecting the air inlet opening 301 of the lower chamber body with the pressure line 13 , so that under the influence of pressure the mold 8th and the embossing material 6 on the wafer 5 starting from the outermost side 80103 The mold gradually separated from each other until the mold and the stamping material 6 to the center 80102 the form are completely separated from each other to realize a quasi-flaking demolding, as seen from 4h can be seen, and closing the pressure line 13 the air inlet opening 301 of the lower chamber body 3 if after complete separation of the form 8th from the embossing material 6 under the action of a force of the lower chamber II up the shape 8th deformed further and assumes a curved upward state, as is apparent from 4i reveals
2. 2. Move the wafer 5 under drive from the second lifting mechanism 1 down and return from the second embossing position 15 in his starting position,
3. 3. Connect the air inlet opening 301 of the lower chamber body with the atmosphere, as out 4y it can be seen
4. 4. Move the lower chamber body 3 down under the drive of the first lifting mechanism 2 , Remove the embossed wafer 5 , Placing a new wafer 5 and initiating the next work cycle, as is 4k reveals

post-production operation

1. 1. Downside isometric etching by means of a conventional anisotropic etching process, removal of the residue layer, copying of the micro-nanometer feature structure 80101 the shape on the embossing material 6 .
2. 2. Transferring the feature pattern to a GaN-based LED substrate (wafer 5 ) using an etching process (wet etching or ICP etching) using the embossed pattern as a mask to enable patterning of an LED epi wafer or fabrication of a photonic crystal LED.

The exposure source of the present embodiment is a high voltage UV mercury lamp having a power of 500W.

In the present embodiment, the pressure line has an operating pressure range of OMPa to 0.2MPa and the vacuum line has an operating pressure range of OMPa to -0.08MPa.

In the present embodiment, an air cylinder having a buffering means becomes the lifting mechanism 2 used.

In step ( 2 In the present embodiment, the negative pressure of the lower chamber II is -0.04 MPa and the positive pressure of the upper chamber I is 0.1 MPa.

In step ( 4 In the present embodiment, the positive pressure of the lower chamber II is 0.05MPa.

So far, only a preferred embodiment of the present invention has been explained. It should be understood that various improvements and modifications can be made by those of ordinary skill in the art without departing from the principle of the invention, which improvements and modifications are also to be considered as part of the scope of the invention.

QUOTES INCLUDE IN THE DESCRIPTION

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Cited patent literature

• CN 102096315 B [0003]

Claims (10)

A device for whole-surface nano-embossing of a large wafer, characterized in that it comprises an upper chamber body with an upper chamber disposed therein and a lower chamber body with a lower chamber disposed therein, the lower chamber body by a displacement up and down by driving a first Lifting mechanism touches the upper chamber body or is separated therefrom, wherein in the lowest part of the upper chamber body provided an elastic shape for embossing and horizontally disposed within the lower chamber, a wafer chuck, in the lower part of a second lifting mechanism is provided, wherein in the chamber wall the upper chamber body has an air inlet opening of the upper chamber body flexibly connected to a pressure line, in the chamber wall of the lower chamber body a flexible air inlet opening of the lower chamber body connected both to a vacuum line and to the pressure line and in the wafer chuck, a wafer chuck air inlet opening connected to the vacuum line is formed, the device further comprising an exposure source. Device for full-surface nano-embossing of a large wafer after Claim 1 characterized in that the wafer chuck is mounted over a work platform within the lower chamber, which work platform vertically penetrates the center of the lower chamber body, the second lifting mechanism being fixed to the center of the work platform. Device for full-surface nano-embossing of a large wafer after Claim 1 , characterized in that on the wafer chuck a wafer is fixed, the surface of which is coated with an embossing material. Device for full-surface nano-embossing of a large wafer after Claim 1 characterized in that the mold comprises, from top to bottom, in turn, a support layer and a pattern layer, the support layer being connected to the lower surface of the upper chamber body at an outer surface of its upper surface and bonded to the lower surface thereof via a coupling agent material Pattern layer is attached. Device for full-surface nano-embossing of a large wafer after Claim 1 , characterized in that a transparent glass pane is attached to the upper surface of the upper chamber body. Device for full-surface nano-embossing of a large wafer after Claim 1 , characterized in that the exposure source is mounted above the upper chamber body. Device for full-surface nano-embossing of a large wafer after Claim 4 , characterized in that the pattern layer is made of a transparent fluoropolymer material and has a thickness of 10μm to 50μm. Device for full-surface nano-embossing of a large wafer after Claim 4 , characterized in that the support layer is transparent and highly flexible and has a thickness of 100 .mu.m to 500 .mu.m. Embossing process for the device according to one of Claims 1 to 8th characterized in that it concretely comprises the following use steps: 1) Pretreatment process sucking a wafer, the surface of which is coated with an embossing material, by means of negative pressure on the wafer chuck and suction of the mold by means of negative pressure on the underside of the upper chamber body, moving the wafer Chucks, driven by the second lift mechanism, up the work platform until a gap of 1mm to 2mm forms between the upper surface of the wafer and the mold, and moving the lower chamber body upwardly through the first lift mechanism to ensure complete abutment of the upper one 2) Embossing operation Vacuum sucking from the air inlet opening of the lower chamber body via a vacuum line to cause a complete deformation of the mold, and stopping the vacuum suction when the arcuate bent and deformed shape at its lowest point the Wafer berü moving the wafer chuck up under the drive of the second lifting mechanism until the mold is placed in a horizontal position, supplying air through the upper chamber body air inlet opening via the pressure line to allow the uniform application of pressure to the entire wafer; and maintaining the pressure for a set time, releasing the connection between the pressure line and the upper chamber body air inlet so that the air inlet of the upper chamber body is connected to the atmosphere and the mold gradually deforms, 3) curing the exposure source so that these exposed over the transparent glass sheet and the shape of the embossing material to its curing, and switching off the exposure source after expiration of a set exposure time, 4) Discharge operation Connecting the air inlet opening of the lower chamber body with the atmosphere to release the negative pressure, and connecting the air inlet opening of the lower chamber body with the pressure line for introducing air, so that the shape and the embossing material on the surface of the wafer are gradually separated from each other and terminating the air induction when the mold deforms further under an upward force and assumes an upwardly curved state, moving the wafer chuck downwardly from the second lift mechanism and returning to its home position, connecting the air inlet opening of the lower one Chamber body with the atmosphere, moving the lower chamber body down under drive from the first lifting mechanism and returning to its original position, removing the embossed wafer from above the lower chamber body, placing a new wafer and initiation of the next Arbeitszyklu s. 5) Aftertreatment Process Isometric etching of the embossing material downward by a conventional anisotropic etching process, removing the residue layer, copying the micro nanometer feature pattern of the mold onto the embossing material, transferring the pattern layer to the wafer by means of an etching process using the pattern on the embossing material Embossing material as a mask to enable wafer-level patterning. Embossing process after Claim 9 , characterized in that in step 2) and 4) the embossing process and the Entformvorgang carried out using the center of the mold as the axis of symmetry, so that the shape receives a uniform and symmetrical force.

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