CN102566262A - Device and method suitable for carrying out wafer-level nano imprinting on uneven substrate - Google Patents
Device and method suitable for carrying out wafer-level nano imprinting on uneven substrate Download PDFInfo
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Abstract
The invention discloses a device and method suitable for carrying out wafer-level nano imprinting on an uneven substrate. The method has the following basic principle: a fluoropolymer-based thin film structure composite flexible die is introduced, gas auxiliary micro-contact is adopted to imprint and a fluid dielectrophoresis force is adopted to drive so as to implement the rapid and complete filling of liquid polymer in a nano structure cavity of the die under the condition of a very small imprinting force; and the demoulding is carried out on the basis of fluoropolymer-based ultralow surface energy and the large-scale demoulding can be implemented by combining a twice-curing and uncovering demoulding method and adopting a micro ejection force. According to the invention, the manufacturing of a large-area micro/nano structure on the uneven (bent, warped or step) or curve or fragile substrate is implemented, and the method has the obvious advantages of high complex accuracy, large imprinting area, high efficiency and low cost and is suitable for manufacturing devices such as LED (Liquid Emitting Diode) nano patterning technology, optical devices (such as an optical lens), butterfly solar condensers, microfluidic devices and the like.
Description
Technical field
The present invention relates to a kind of method in the non-smooth or surperficial manufacturing large-area nano of curved substrate structure; Relate in particular to a kind of based on compound soft mold of fluoropolymer polymer base film structure and the power-actuated apparatus and method that are applicable to non-smooth substrate wafer level nano impression of fluid dielectrophoresis; Realize efficient, low-cost LED nano patterning, belong to minute manufacturing and optoelectronic device manufacturing technology field.
Background technology
Has application very widely at non-smooth (bending, warpage or step) or curved substrate surface manufacturing large area micro-nano rice structure, like LED nano patterning technology, optical device (like optical lens, diffraction optical element etc.), butterfly solar concentrator, compound eye CIS, micro-fluidic device etc.Especially LED nano patterning (adopting the photosphere of getting of graphics of nanometer dimension Sapphire Substrate and graphics of nanometer dimension LED epitaxial wafer) is thought to improve the effective way of light generation efficient and light extraction efficiency by academia and industry member; Be so-called nano patterned Sapphire Substrate (Nano-Patterned Sapphire Substrate; NPSS) and LED epitaxial wafer pattern technology (Photonic Crystal LED; Photonic crystal LED); Especially photonic crystal is thought to improve by industry at present and is got optical efficiency, realizes one of effective technical means of ultra-high brightness LED.But LED epitaxial wafer surface irregularity, there is buckling deformation in the surface, and has the protrusion of surface of several micron-scales, belongs to frangible substrate.But it is very difficult making the large-area nano structure at surface of uneven substrate.For example, because the LED epitaxial wafer exists warpage and rat, the optical lithography depth of focus is than the requirement that can't adapt to exposure; It is high to adopt beamwriter lithography to make the large-area nano infrastructure cost, and throughput rate is low, is difficult to realize the manufacturing of large tracts of land, scale.For NPSS; Adopt existing contact perhaps can't satisfy the requirement of nano graph manufacturing accuracy near the formula lithographic equipment; Adopt step-by-step movement projection lithography (Stepper) though can realize the NPSS manufacturing; But the Stepper that semicon industry uses seems too expensive in the LED industry, increased the manufacturing cost of LED, and LED is very responsive for cost.Although it is graphical that other has also attempted being applied to LED such as nanometer manufacturing approaches such as nanosphere pearly-lustre quarter, anodic oxidation aluminium formwork (AAO), laser interference lithographies; But all in the deficiency that exists aspect certain, like cost, throughput rate, consistance, yield and scale manufacturing etc.Can't satisfy of the harshness requirement (LED for the requirement of cost, consistance and yield very strict) of LED industry for high rate/low cost production, high yield.
Summary of the invention
The objective of the invention is to utilize good conformal contact and the stripping feature of the compound soft mold of fluoropolymer polymer base film structure; And combine the fluid dielectrophoretic force to drive the method that nano impression is filled; A kind of apparatus and method towards the non-smooth substrate wafer level nano impression of being applicable to of non-smooth substrate wafer level nano impression are provided, are implemented in surperficial efficient, the low cost of non-smooth or curved substrate and produce the large-area nano structure.
The present invention proposes: introduce the compound soft mold of a kind of fluoropolymer polymer base film structure; And combination " twice curing " and the demoulding of " opening " formula; Adopt small knockout press can realize the large tracts of land demoulding; Avoid the adhesion defects in the large tracts of land knockout course and need big knockout press to cause mould and copy pattern damage are influenced complex quality and die life; Based on gas auxiliary " little contact " and high resiliency membrane structure two-layer compound soft mold (guaranteeing complete even conformal the contacting of mould and non-flat substrate in the moulding process); Adopt " fluid dielectrophoretic force " to drive and realize liquid polymer quick and complete filling for mould nanostructured cavity under very little force of impression condition; Becoming traditional nano impression " pressure-driven " drives into " fluid dielectrophoretic force "; Be implemented in and form the large-area nano structure on non-smooth, the frangible substrate, solve the contradictory problems of the nano impression filling and the demoulding.
To achieve these goals, the present invention takes following technical solution:
A kind of device that is applicable to non-smooth substrate wafer level nano impression, it comprises: the substrate of worktable, conduction (can be wafer or epitaxial wafer), liquid organic polymer, template, air valve plate, gas chamber, ultraviolet source, impression mechanism, vacuum line, pressure piping, electric field; Wherein, being coated with the full wafer substrate that is covered with liquid organic polymer is fixed on the worktable; Template is adsorbed on the bottom surface of air valve plate through vacuum line, and (the template outermost adheres on the air valve plate; When guaranteeing not have pull of vacuum absorption; Mould still is tightly connected with the air valve plate), the air valve plate is fixed on the bottom surface with gas chamber, and ultraviolet source is fixed on the item face of gas chamber; Impression mechanism links to each other with gas chamber; Pressure piping links to each other with the air intake opening of gas chamber; Said template comprises support conductive layer and feature structure layer, between support conductive layer and substrate, is provided with electric field; On the feature structure layer, also has the nanostructured chamber.
Said support conductive layer carries out surface modification treatment, perhaps applies the coupling agent material of layer of transparent.
The high resiliency film like PET material that said support conductive layer is an electrically conducting transparent (being typical compliant conductive film); Said feature structure layer is utmost point low-surface-energy, hard (high elastic modulus), high-k, transparent fluoropolymer material (high-k).
Said feature structure layer thickness is the 10-50 micron, and supporting conductive layer thickness is the 100-200 micron.
Said ultraviolet source is a led array.
Said electric field is a positive pole with the template end, and substrate terminal is a negative pole; Electric field adopts alternating voltage, the frequency 5-30Hz of voltage, the big or small 50-380V of voltage.
The working range of said pressure piping is: 0-5bar; Working pressure in the moulding process is 100-1000mbar; The working range of vacuum line＜-0.2bar.
A kind of employing is applicable to the method for stamping of the device of non-smooth substrate wafer level nano impression, if substrate itself conducts electricity, it comprises the steps:
(1) preprocessing process
The liquid organic polymer (also claiming resist, is a kind of high-k " epoxy radicals " low viscosity polymer material) of spin coating one deck is placed on the worktable on substrate; Template is adsorbed on the bottom surface at the air valve plate through vacuum mode; And template and substrate are aligned;
(2) moulding process
1. impress mechanism's drive template and move to substrate from initial station, the opening pressure pipeline feeds pressurized air to gas chamber simultaneously; Impression mechanism moves to substrate with the speed of fast feed, in case the minimum point of feature structure layer contacts with liquid organic polymer on the substrate, impresses mechanism and just changes work speed into;
2. advance under the combined action of force of impression the worker of the auxiliary force of impression of gas with impression mechanism, the film like template is shakeout on the liquid organic polymer that spreads over substrate gradually, and makes conformal contact of liquid organic polymer on template and the substrate;
3. between the support conductive layer (the PET film of electrically conducting transparent) of template and substrate, apply electric field; Wherein the template end is anodal; Substrate terminal is a negative pole, under the effect of extra electric field, forms " fluid dielectrophoresis " and " type Jie powers on wetting "; Make the interfacial characteristics of liquid organic polymer and template change infiltration into by non-infiltration; And the lifting force that under the effect of fluid dielectrophoretic force, the liquid polymerization deposits yields is made progress, driving the quick filling of liquid organic polymer in the nanostructured cavity of template characteristic structural sheet, the average height of filling depends on the balance of fluid dielectrophoretic force and gaseous pressure and polymeric rheology resistance;
4. continue to increase the auxiliary force of impression of gas, realize the complete filling of liquid organic polymer in the nanostructured chamber of the feature structure layer of template, and residual layer is thinned to preset thickness;
(3) one-step solidification process
Open ultraviolet source (LED lamp array), ultraviolet light sees through the exposure of template liquid towards organic polymer, makes it " one-step solidification ", accomplishes the typing of polymer nanocomposite structure; " once suitably solidifying in advance " helps the demoulding (after the polymkeric substance full solidification; On template and polymer interface, generate bigger adhesion; The demoulding needs bigger knockout press, and the defective that is easy to adhere to), and after pressure discharges fully; Carry out full solidification, help the raising of complex precision.
(4) knockout course
1. close the auxiliary force of impression of electric field and gas; Impression mechanism drives template and makes progress little mobile; At first the adhesion of the horizontal contact interface of destructive characteristics structural sheet and stamping structure (polymkeric substance after the curing) is separated from each other the template and the stamping structure of " one-step solidification ", under the complete release conditions of force of impression; Stamping structure to " one-step solidification " carries out regelate or back curing (post-curing) processing then; Reach full solidification (purpose of twice curing: the one, avoid full solidification after, polymkeric substance and substrate produce bigger adhesion, are unfavorable for the demoulding; The 2nd, before the full solidification, discharge the distortion of stamping structure in advance, improve the quality of coining pattern);
2. after the abundant full solidification of stamping structure; (because adopt the fexible film structure mold, the knockout course mould is inevitable at first to be separated from periphery and stamping structure " opening " formula of employing release method, along with the increase of hoisting depth; The demoulding is expanded to the centre); Be that the knockout course template at first is separated from periphery and stamping structure, along with the increase of hoisting depth, the demoulding is expanded to the centre; Under very little knockout press effect, (mainly overcome the friction force of polymkeric substance and substrate interface sidewall) and can realize being separated from each other gradually of template and coining pattern, accomplish the demoulding;
3. template is with after stamping structure separates fully, and impression mechanism drives template 4 and moves upward fast, returns the impression original position, so that change conductive substrates, begins working cycle next time;
(5) last handling process
Anisotropic etch process (for example RIE) equal proportion through routine is etching down, removes residual layer, on polymkeric substance, copies the micro-nano feature structure of mould;
Further combining etching technics (wet etching or dry etching), is mask with the polymkeric substance figure, and feature pattern is transferred on the substrate, realizes substrate graph.
Perhaps, a kind of employing is applicable to the method for stamping of the device of non-smooth substrate wafer level nano impression, if substrate itself is non-conductive, it comprises the steps:
(1) preprocessing process
At first on non-conductive substrate, deposit one deck conductive layer, the liquid organic polymer of spin coating one deck is placed on the worktable on conductive layer; Template is adsorbed on the bottom surface at the air valve plate through vacuum mode; And template and substrate are aligned;
(2) moulding process
1. impress mechanism's drive template and move to substrate from initial station, the opening pressure pipeline feeds pressurized air to gas chamber simultaneously; Impression mechanism moves to substrate with the speed of fast feed, in case the minimum point of feature structure layer contacts with liquid organic polymer on the substrate, the marking press allosteric transformation is a work speed;
2. advance under the combined action of force of impression with the impression worker of mechanism at the auxiliary force of impression of gas, the film like template is shakeout on the liquid organic polymer that spreads over substrate gradually, and makes conformal contact of liquid organic polymer on template and the substrate;
3. between the support conductive layer of template and substrate conductive layer, apply electric field; Wherein the template end is anodal; Substrate conductive layer end is a negative pole, under the effect of extra electric field, forms " fluid dielectrophoresis " and " type Jie powers on wetting "; Make the interfacial characteristics of liquid organic polymer and template change infiltration into by non-infiltration; And the lifting force that under the effect of fluid dielectrophoretic force, the liquid polymerization deposits yields is made progress, driving liquid organic polymer and in the nanostructured chamber of feature structure layer, fill fast, the average height of filling depends on the balance of fluid dielectrophoretic force and gaseous pressure and polymeric rheology resistance;
4. continue to increase the auxiliary force of impression of gas, realize the complete filling of liquid organic polymer in the nanostructured chamber of feature structure layer, and residual layer is thinned to preset thickness;
(3) one-step solidification process
Open ultraviolet source, ultraviolet light sees through the exposure of template liquid towards polymkeric substance, makes it " one-step solidification ", accomplishes the stamping structure of polymer nanocomposite structure.
(4) knockout course
1. close the auxiliary force of impression of electric field and gas; Impression mechanism drives template and makes progress little mobile; At first the adhesion of destructive characteristics structural sheet and the horizontal contact interface of stamping structure is separated from each other the template and the stamping structure of " one-step solidification ", under the complete release conditions of force of impression; Stamping structure to " one-step solidification " carries out regelate or back cured then, reaches full solidification;
2. after the abundant full solidification of stamping structure; " opening " formula of employing release method. be that the knockout course template at first is separated from periphery and stamping structure; Increase along with hoisting depth; The demoulding is expanded to the centre, under very little knockout press effect, can realize being separated from each other gradually of template and stamping structure, accomplishes the demoulding;
3. template is with after stamping structure separates fully, and impression mechanism drives template and moves upward fast, returns the impression original position, so that change substrate, begins working cycle next time.
(5) last handling process
Anisotropic etch process equal proportion through routine is etching down, removes residual layer, on stamping structure, copies the micro-nano feature structure of mould;
Further combining etching technics, is mask with the stamping structure figure, feature pattern is transferred on the conductive layer of substrate, and is mask layer with the conductive layer, and feature structure is transferred on the substrate, removes polymkeric substance and conductive layer, realizes substrate graph.
Said one-step solidification time 10-20s, the time 20-50s of regelate.
Among the present invention, template, liquid organic polymer, substrate need satisfy following condition:
(1) template: template is the membrane structure two-layer composite, promptly comprises dielectric layer (dielectric layer) and conductive layer; Mold integral has very high elasticity or flexibility, to adapt to the requirement of non-smooth substrate conformal (conformal) contact; Should have good uv transmittance in addition, satisfy the ultra-violet curing requirement;
(2) liquid organic polymer: liquid polymer is high-k " epoxy radicals " viscosity material, and contains light-initiated son, to realize the ultra-violet curing function.
(3) substrate: have electric conductivity or comprise conductive layer, for example for LED epitaxial wafer and some conductive substrates (like the SiC substrate), itself just has electric conductivity; And, need on substrate, deposit one deck conductive layer such as Cr, nickel or ITO etc., the double simultaneously hard mask layer (Hard Mask) of doing the sapphire etching of this layer like Sapphire Substrate for some nonconducting substrates.
(4) specific inductive capacity of polymkeric substance must be higher than the specific inductive capacity of template dielectric layer (feature structure layer, i.e. fluoropolymer polymer).
Notable feature of the present invention is:
(1) fluoropolymer polymer base film structure two-layer compound soft mold; Good conformal contact and antiwear characteristic, feature structure layer have higher modulus of elasticity, and (compare with PDMS, non-deformability is strong; Multiple precision is high), the very high elasticity of support conductive layer adapts to non-smooth substrate conformal with pliability and contacts;
(2) becoming traditional nano impression " pressure-driven " drives into " fluid dielectrophoretic force ";
(3) little contact, impression all is based on little the contact with knockout course, reduces die deformation and knockout press;
(4) fluoropolymer material such as Teflon has very high gas penetration potential, and the bubble that produces in the moulding process is easy to eliminate;
(5) utilize master mold to make fluoropolymer polymer basic mode tool and coining pattern manufacturing, all need not to carry out surperficial anti-stiction treatment, the demoulding is easy, simplifies mould manufacturing and imprint process;
(6) the mold work life-span long, defective is low.
Of the present inventionly realized at non-smooth or curved surface or step or frangible substrate surface is efficient, low cost produces the large-area nano structure; The present invention be suitable for LED nano patterning technology, optical device (like optical lens, diffraction optical element etc.), butterfly solar concentrator, compound eye CIS, etc. manufacturing, especially be fit to LED nano patterning technology.
Description of drawings
Fig. 1 is a wafer scale nano-imprinting device structural representation of the present invention.
Fig. 2 is a formwork structure synoptic diagram of the present invention.
Fig. 3 a is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step synoptic diagram.
Fig. 3 b is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step synoptic diagram.
Fig. 3 c is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step synoptic diagram.
Fig. 3 d is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step synoptic diagram.
Fig. 3 e is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step synoptic diagram.
Fig. 3 f is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step synoptic diagram.
Fig. 3 g is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step synoptic diagram.
Fig. 3 h is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step synoptic diagram.
Fig. 3 i is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step synoptic diagram.
Fig. 3 j is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step synoptic diagram.
Fig. 4 a is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step synoptic diagram.
Fig. 4 b is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step synoptic diagram.
Fig. 4 c is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step synoptic diagram.
Fig. 4 d is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step synoptic diagram.
Fig. 4 e is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step synoptic diagram.
Fig. 4 f is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step synoptic diagram.
Fig. 4 g is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step synoptic diagram.
Fig. 4 h is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step synoptic diagram.
Fig. 4 i is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step synoptic diagram.
Fig. 4 j is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step synoptic diagram.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is made further detailed description.
Among Fig. 1, it comprises: worktable (wafer-supporting platform) 1, substrate (wafer, epitaxial wafer) 2, liquid organic polymer 3, template (mould) 4, air valve plate 5, gas chamber 6, ultraviolet source 7, impression mechanism 8, vacuum line 9, pressure piping 10, electric field 11; Wherein, being coated with the substrate 2 that is covered with liquid organic polymer 3 is fixed on the worktable 1; Template 4 is adsorbed on the bottom surface of air valve plate 5 through vacuum line 9, and (template 4 outermost adhere on the valve plate 5; When guaranteeing not have pull of vacuum absorption; Template 4 still is tightly connected with air valve plate 5); Air valve plate 5 is fixed on the bottom surface of gas chamber 6, and ultraviolet source (can adopt LED lamp array) 7 is fixed on the item face of gas chamber 6; Impression mechanism 8 links to each other with gas chamber 6; Pressure piping 10 links to each other with the air intake opening of gas chamber 6; Apply electric field 11 (die end is for anodal, and substrate terminal is a negative pole) between the support conductive layer 401 of template 4 and the conductive substrates 2 (the perhaps conductive layer 201 of non-conductive substrate).
Among Fig. 2; Said template 4 is the compound soft mold of fluoropolymer polymer base film shape; It is by supporting conductive layer 401 and 403 one-tenth on feature structure layer; Wherein feature structure layer 403 has extremely low surface energy, hard (high elastic modulus), high dielectric property and transparent characteristic, supports the characteristic that conductive layer 401 has transparent, conduction, highly flexible and membrane structure.High resiliency film like PET material with electrically conducting transparent serves as to support conductive layer 401; With utmost point low-surface-energy, hard and transparent fluoropolymer material (high-k) is feature structure layer 403; Wherein feature structure layer 403 comprise the graphic structure that will duplicate, i.e. nanostructured chamber.Supporting conductive layer 401 is positioned on the feature structure layer 403.Fluoropolymer polymer base feature structure layer 403 thickness are the 10-50 microns, and its nanostructured is hard (having very high elastic modulus), but should keep whole flexibility; Supporting conductive layer 401PET thickness is the 100-200 micron, and the yardstick of relative X of its thickness and Y is much little, and high resiliency and pliability good (lower Young modulus) are typical compliant conductive films.In addition; Because fluoropolymer material has low-down surface energy, less with the adhesion of the PET that supports conductive layer 401, in order to increase the adhesion of the two; Must carry out surface modification treatment to the PET that supports conductive layer 401, perhaps apply the coupling agent material 402 of layer of transparent.
When reality was used, template 4 of the present invention served as to support conductive layer 401 with the elastomeric PET film of electrically conducting transparent, and clear, colorless KH-550 coupling agent is middle adhesion layer 402, and transparent fluoropolymer polymer Teflon AF 1600 is a feature structure layer 403.
Embodiment 1
The present invention is fabricated to the graphical embodiment of LED epitaxial wafer (conductive substrates) with GaN photonic crystal LED, and it is as shown in Figure 3 to carry out the patterned concrete processing step of LED epitaxial wafer based on apparatus and method of the present invention, comprising:
(1) preprocessing process
The liquid organic polymer 3 of spin coating one deck on GaN base LED substrate 2 is placed on the worktable 1.Template 4 is adsorbed on the bottom surface at air valve plate 5 through vacuum mode; And template 4 and GaN base LED substrate 2 are aligned.Shown in Fig. 3 a.
(2) moulding process
1. impress mechanism's 8 drive templates 4 and move to GaN base LED substrate 2 from initial station, opening pressure pipeline 10 feeds pressurized air to gas chamber 6 simultaneously.Impression mechanism 8 moves to substrate 2 with the speed of fast feed, in case the minimum point 40301 of film like dual-layer composite soft mold feature structural sheet 403 contacts with liquid organic polymer 3 on the substrate 2, impresses mechanism 8 and changes work speed into, shown in Fig. 3 b;
2. advance under the combined action of force of impression 801 with the impression 8 small workers of mechanism at the auxiliary force of impression 1001 of gas; Film like template 4 is shakeout on the liquid organic polymer 3 that spreads over substrate 2 gradually; And make liquid organic polymer 3 conformal contacts the on template 4 and the substrate 2, shown in Fig. 3 c;
3. (template 4 ends are for anodal between the support conductive layer 401 (the PET film of electrically conducting transparent) of template 4 and substrate 2, to apply electric field 11; Epitaxial wafer 2 ends are negative pole); Under the effect of extra electric field 11; Form " fluid dielectrophoresis " and " type Jie powers on wetting "; Make the liquid organic polymer 3 and the interfacial characteristics of template 4 change infiltration into, and the lifting force that under the effect of fluid dielectrophoretic force, the liquid polymerization deposits yields is made progress, drive 40302 the quick filling in template 4 feature structure layers 403 nanostructured cavity of liquid organic polymer 3 by non-infiltration; The average height of filling depends on the balance of fluid dielectrophoretic force and gaseous pressure and polymeric rheology resistance, shown in Fig. 3 d;
4. continue to increase the auxiliary force of impression of gas, realize 40302 the complete filling in the feature structure layer 403 nanostructured cavity of template 4 of liquid organic polymer 3, and residual layer is thinned to preset thickness, shown in Fig. 3 e.
(3) one-step solidification process
Open ultraviolet source 7 (LED lamp array), ultraviolet light sees through 3 exposures of template 4 liquid towards organic polymers, makes it " one-step solidification ", accomplishes the typing of polymer nanocomposite structure." once suitably solidifying in advance " helps the demoulding (after the polymkeric substance full solidification; On mould and polymer interface, generate bigger adhesion, the demoulding needs bigger knockout press, and the defective that is easy to adhere to); And after pressure discharges fully; Carry out full solidification, help the raising of complex precision, shown in Fig. 3 f.
(4) knockout course
1. close electric field 11 and the auxiliary force of impression of gas; Impression mechanism 8 drives template 4 and makes progress little mobile; At first destroy the feature structure layer 403 of template 4 and the adhesion of horizontal contact interface 1301 of stamping structure 301 (polymkeric substance after the curing) and vertical contact interface 1302; Large tracts of land interface contact adhesion is the chief component of knockout press), the mould and the stamping structure of " one-step solidification " are separated from each other, under the complete release conditions of force of impression; Stamping structure 301 to " one-step solidification " carries out regelate or back curing (post-curing) processing then; Reach full solidification (purpose of twice curing: the one, avoid full solidification after, liquid organic polymer 3 produces bigger adhesion with template 4, is unfavorable for the demoulding; The 2nd, before the full solidification, discharge the distortion of stamping structure in advance, improve the quality of coining pattern).Shown in Fig. 3 g;
2. after the abundant full solidification; (because adopt flexible thin membrane type template 4, knockout course template 4 must at first be separated from periphery and stamping structure " opening " formula of employing release method, along with the increase of hoisting depth; The demoulding is expanded to the centre); Under very little knockout press effect, (mainly overcome the friction force of polymkeric substance and mold interface sidewall 1302) and can realize being separated from each other gradually of template 4 and coining pattern 302, accomplish the demoulding, shown in Fig. 3 h;
3. template 4 is with after stamping structure 302 separates fully, and impression mechanism 8 drives templates 4 and moves upward fast, returns the impression original position, so that change substrate 2, begins working cycle next time, shown in Fig. 3 i.
(5) last handling process
Anisotropic etch process (for example RIE) equal proportion through routine is etching down, removes residual layer 303, on resist, copies the micro-nano feature structure of mould, shown in Fig. 3 j.
Follow-up combination etching technics (wet etching or ICP etching) is a mask with the resist figure, and feature pattern is transferred on the GaN base LED substrate 2, realizes the graphical or photonic crystal LED manufacturing of LED substrate 2.
Present embodiment 1 electric field adopts alternating voltage, the frequency 10Hz of voltage, the big or small 200V of voltage.
Working pressure in the moulding process is 500mbar.
Said one-step solidification time 10s, the time 30s of regelate.
For non-conductive substrate, need be on substrate deposition one deck conductive layer earlier, for example metallic nickel, chromium, ITO etc., the double simultaneously hard mask layer (Hard Mask) of doing figure transfer of this layer.Present embodiment 2 is patterned into example with Sapphire Substrate, deposition layer of metal nickel conductive layer 201 on Sapphire Substrate 2 at first, and it is as shown in Figure 4 to carry out the patterned concrete processing step of Sapphire Substrate based on apparatus of the present invention and method subsequently, comprising:
(1) preprocessing process
The liquid organic polymer 3 of spin coating one deck is placed on the worktable 1 on the Sapphire Substrate 2 of plated metal nickel.Template 4 is adsorbed on the bottom surface at air valve plate 5 through vacuum mode; And template 4 and Sapphire Substrate 2 are aligned.Shown in Fig. 4 a.
(2) moulding process
1. impress mechanism's 8 drive templates 4 and move to Sapphire Substrate 2 from initial station, opening pressure pipeline 10 feeds pressurized air to gas chamber 6 simultaneously.Impression mechanism 8 moves to Sapphire Substrate 2 with the speed of fast feed; In case the minimum point 40301 of film like dual-layer composite soft mold feature structural sheet 403 contacts with the liquid organic polymer 3 on the Sapphire Substrate 2; Work speed is changed in impression mechanism 8, shown in Fig. 4 b;
2. advance under the combined action of force of impression 801 with the impression 8 small workers of mechanism at the auxiliary force of impression 1001 of gas; Film like template 4 is shakeout on the liquid organic polymer 3 that spreads over Sapphire Substrate 2 gradually; And making liquid organic polymer 3 on template 4 and the Sapphire Substrate 2, complete homogeneity is conformal contacts, shown in Fig. 4 c;
3. (template 4 ends are for anodal between the support conductive layer 401 (the PET film of electrically conducting transparent) of template 4 and Sapphire Substrate 2 conductive layers 201, to apply electric field 11; Sapphire Substrate conductive layer 201 ends are negative pole); Under the effect of extra electric field 11; Form " fluid dielectrophoresis " and " type Jie powers on wetting "; Make the liquid organic polymer 3 and the interfacial characteristics of template 4 change infiltration into, and the lifting force that under the effect of fluid dielectrophoretic force, the liquid polymerization deposits yields is made progress, drive 40302 the quick filling in template 4 feature structure layers 403 nanostructured cavity of liquid organic polymer 3 by non-infiltration; The average height of filling depends on the balance of fluid dielectrophoretic force and gaseous pressure and polymeric rheology resistance, shown in Fig. 4 d;
4. continue to increase the auxiliary force of impression of gas, realize 40302 the complete filling in template 4 feature structure layers 403 nanostructured cavity of liquid organic polymer 3, and residual layer is thinned to preset thickness, shown in Fig. 4 e.
(3) one-step solidification process
Open ultraviolet source 7 (LED lamp array), ultraviolet light sees through 3 exposures of template 4 liquid towards organic polymers, makes it " one-step solidification ", accomplishes the typing of polymer nanocomposite structure." one-step solidification " helps the demoulding (after the polymkeric substance full solidification; On template 4 and liquid organic polymer 3 interfaces, generate bigger adhesion, the demoulding needs bigger knockout press, and the defective that is easy to adhere to); And after pressure discharges fully; Carry out full solidification, help the raising of complex precision, shown in Fig. 4 f.
(4) knockout course
1. close electric field 11 and the auxiliary force of impression of gas; Impression mechanism 8 drives template 4 and makes progress little mobile; At first destroy the adhesion of template 4 feature structure layers 40302 and horizontal contact interface 1301 of stamping structure (polymkeric substance after the curing) and vertical contact interface 1302; Large tracts of land interface contact adhesion is the chief component of knockout press), the template 4 and the stamping structure of " one-step solidification " are separated from each other, under the complete release conditions of force of impression; Then the structure 1 of " one-step solidification " is carried out regelate or back curing (post-curing) processing; Reach full solidification (purpose of twice curing: the one, avoid full solidification after, liquid organic polymer 3 produces bigger adhesion with template 4, is unfavorable for the demoulding; The 2nd, before the full solidification, discharge the distortion of stamping structure in advance, improve the quality of coining pattern).Shown in Fig. 4 g;
2. after the stamping structure 302 abundant full solidification; (because adopt flexible thin membrane type template 4, knockout course template 4 must at first be separated from periphery and stamping structure " opening " formula of employing release method, along with the increase of hoisting depth; The demoulding is expanded to the centre); Under very little knockout press effect, (mainly overcome the friction force of polymkeric substance and mold interface sidewall 1302) and can realize being separated from each other gradually of template 4 and coining pattern, accomplish the demoulding, shown in Fig. 4 h; 3. template 4 is with after stamping structure 302 separates fully, and impression mechanism 8 drives templates 4 and moves upward fast, returns the impression original position, so that change Sapphire Substrate 2, begins working cycle next time, shown in Fig. 4 i.
(5) last handling process
Anisotropic etch process (for example RIE) equal proportion through routine is etching down, removes residual layer 303, on resist, copies the micro-nano feature structure of mould, shown in Fig. 4 j.
Follow-up combination etching technics (wet etching or ICP etching); With the resist figure is mask; Feature pattern is transferred on the conductive layer 201 of Sapphire Substrate, and be hard mask layer, feature structure is transferred on the Sapphire Substrate with conductive layer nickel 201; Remove resist and conductive layer, realize Sapphire Substrate 2 nano patternings.
Working pressure in the moulding process is 600mbar.
Said one-step solidification time 15s, the time 30s of regelate.
In addition, those skilled in the art also can do other variation in spirit of the present invention.Certainly, these all should be included in the present invention's scope required for protection according to the variation that the present invention's spirit is done.
Claims (10)
1. device that is applicable to non-smooth substrate wafer level nano impression; It is characterized in that it comprises: the substrate of worktable, conduction, liquid organic polymer, template, air valve plate, gas chamber, ultraviolet source, impression mechanism, vacuum line, pressure piping, electric field; Wherein, being coated with the full wafer substrate that is covered with liquid organic polymer is fixed on the worktable; Template is adsorbed on the bottom surface of air valve plate through vacuum line, and the air valve plate is fixed on the bottom surface with gas chamber, and ultraviolet source is fixed on the end face of gas chamber; Impression mechanism links to each other with gas chamber; Pressure piping links to each other with the air intake opening of gas chamber; Said template comprises support conductive layer and feature structure layer, between support conductive layer and substrate, is provided with electric field; On the feature structure layer, also has the nanostructured chamber.
2. the device that is applicable to non-smooth substrate wafer level nano impression as claimed in claim 1 is characterized in that said support conductive layer carries out surface modification treatment, perhaps applies the coupling agent material of layer of transparent.
3. according to claim 1 or claim 2 the device that is applicable to non-smooth substrate wafer level nano impression is characterized in that the high resiliency film like PET material that said support conductive layer is an electrically conducting transparent; Said feature structure layer is utmost point low-surface-energy, hard, high-k, transparent fluoropolymer material.
4. the device that is applicable to non-smooth substrate wafer level nano impression as claimed in claim 3 is characterized in that said feature structure layer thickness is the 10-50 micron, and supporting conductive layer thickness is the 100-200 micron.
5. the device that is applicable to non-smooth substrate wafer level nano impression as claimed in claim 1 is characterized in that said ultraviolet source is a led array.
6. the device that is applicable to non-smooth substrate wafer level nano impression as claimed in claim 1 is characterized in that said electric field is a positive pole with the template end, and substrate terminal is a negative pole; Electric field adopts alternating voltage, the frequency 5-30Hz of voltage, the big or small 50-380V of voltage.
7. the device that is applicable to non-smooth substrate wafer level nano impression as claimed in claim 1 is characterized in that the working range of said pressure piping is: 0-5bar; Working pressure in the moulding process is 100-1000mbar; The working range of vacuum line<b ><-0.2bar.</b>
8. one kind is adopted the described method for stamping that is applicable to the device of non-smooth substrate wafer level nano impression of claim 1, it is characterized in that if substrate itself conducts electricity, it comprises the steps:
(1) preprocessing process
The liquid organic polymer of spin coating one deck is placed on the worktable on substrate; Template is adsorbed on the bottom surface at the air valve plate through vacuum mode; And template and substrate are aligned;
(2) moulding process
1. impress mechanism's drive template and move to substrate from initial station, the opening pressure pipeline feeds pressurized air to gas chamber simultaneously; Impression mechanism moves to substrate with the speed of fast feed, in case the minimum point of feature structure layer contacts with liquid organic polymer on the substrate, impresses mechanism and just changes work speed into;
2. advance under the combined action of force of impression the worker of the auxiliary force of impression of gas with impression mechanism, the film like template is shakeout on the liquid organic polymer that spreads over substrate gradually, and makes conformal contact of liquid organic polymer on template and the substrate;
3. between the support conductive layer of template and substrate, apply electric field; Wherein the template end is anodal; Substrate terminal is a negative pole, under the effect of extra electric field, forms " fluid dielectrophoresis " and " type Jie powers on wetting "; Make the interfacial characteristics of liquid organic polymer and template change infiltration into by non-infiltration; And the lifting force that under the effect of fluid dielectrophoretic force, the liquid polymerization deposits yields is made progress, driving the quick filling of liquid organic polymer in the nanostructured cavity of template characteristic structural sheet, the average height of filling depends on the balance of fluid dielectrophoretic force and gaseous pressure and polymeric rheology resistance;
4. continue to increase the auxiliary force of impression of gas, realize the complete filling of liquid organic polymer in the nanostructured chamber of the feature structure layer of template, and residual layer is thinned to preset thickness;
(3) one-step solidification process
Open ultraviolet source, ultraviolet light sees through the exposure of template liquid towards organic polymer, makes it " one-step solidification ", accomplishes the typing of polymer nanocomposite structure;
(4) knockout course
1. close the auxiliary force of impression of electric field and gas; Impression mechanism drives template and makes progress little mobile; At first the adhesion of destructive characteristics structural sheet and the horizontal contact interface of stamping structure is separated from each other the template and the stamping structure of " one-step solidification ", under the complete release conditions of force of impression; Stamping structure to " one-step solidification " carries out regelate or back cured then, reaches full solidification;
2. after the abundant full solidification of stamping structure; " opening " formula of employing release method; Be that the knockout course template at first is separated from periphery and stamping structure, along with the increase of hoisting depth, the demoulding is expanded to the centre; Under very little knockout press effect, can realize being separated from each other gradually of template and coining pattern, accomplish the demoulding;
3. template is with after stamping structure separates fully, and impression mechanism drives template 4 and moves upward fast, returns the impression original position, so that change conductive substrates, begins working cycle next time;
(5) last handling process
Anisotropic etch process equal proportion through routine is etching down, removes residual layer, on polymkeric substance, copies the micro-nano feature structure of mould;
Further combining etching technics, is mask with the polymkeric substance figure, and feature pattern is transferred on the substrate, realizes substrate graph.
9. one kind is adopted the described method for stamping that is applicable to the device of non-smooth substrate wafer level nano impression of claim 1, it is characterized in that if substrate itself is non-conductive, it comprises the steps:
(1) preprocessing process
At first on non-conductive substrate, deposit one deck conductive layer, the liquid organic polymer of spin coating one deck is placed on the worktable on conductive layer; Template is adsorbed on the bottom surface at the air valve plate through vacuum mode; And template and substrate are aligned;
(2) moulding process
1. impress mechanism's drive template and move to substrate from initial station, the opening pressure pipeline feeds pressurized air to gas chamber simultaneously; Impression mechanism moves to substrate with the speed of fast feed, in case the minimum point of feature structure layer contacts with liquid organic polymer on the substrate, the marking press allosteric transformation is a work speed;
2. advance under the combined action of force of impression with the impression worker of mechanism at the auxiliary force of impression of gas, the film like template is shakeout on the liquid organic polymer that spreads over substrate gradually, and makes conformal contact of liquid organic polymer on template and the substrate;
3. between the support conductive layer of template and substrate conductive layer, apply electric field; Wherein the template end is anodal; Substrate conductive layer end is a negative pole, under the effect of extra electric field, forms " fluid dielectrophoresis " and " type Jie powers on wetting "; Make the interfacial characteristics of liquid organic polymer and template change infiltration into by non-infiltration; And the lifting force that under the effect of fluid dielectrophoretic force, the liquid polymerization deposits yields is made progress, driving liquid organic polymer and in the nanostructured chamber of feature structure layer, fill fast, the average height of filling depends on the balance of fluid dielectrophoretic force and gaseous pressure and polymeric rheology resistance;
4. continue to increase the auxiliary force of impression of gas, realize the complete filling of liquid organic polymer in the nanostructured chamber of feature structure layer, and residual layer is thinned to preset thickness;
(3) one-step solidification process
Open ultraviolet source, ultraviolet light sees through the exposure of template liquid towards polymkeric substance, makes it " one-step solidification ", accomplishes the stamping structure of polymer nanocomposite structure;
(4) knockout course
1. close the auxiliary force of impression of electric field and gas; Impression mechanism drives template and makes progress little mobile; At first the adhesion of destructive characteristics structural sheet and the horizontal contact interface of stamping structure is separated from each other the template and the stamping structure of " one-step solidification ", under the complete release conditions of force of impression; Stamping structure to " one-step solidification " carries out regelate or back cured then, reaches full solidification;
2. after the abundant full solidification of stamping structure; " opening " formula of employing release method. be that the knockout course template at first is separated from periphery and stamping structure; Increase along with hoisting depth; The demoulding is expanded to the centre, under very little knockout press effect, can realize being separated from each other gradually of template and stamping structure, accomplishes the demoulding;
3. template is with after stamping structure separates fully, and impression mechanism drives template and moves upward fast, returns the impression original position, so that change substrate, begins working cycle next time;
(5) last handling process
Anisotropic etch process equal proportion through routine is etching down, removes residual layer, on stamping structure, copies the micro-nano feature structure of mould;
Further combining etching technics, is mask with the stamping structure figure, feature pattern is transferred on the conductive layer of substrate, and is mask layer with the conductive layer, and feature structure is transferred on the substrate, removes polymkeric substance and conductive layer, realizes substrate graph.
10. like claim 8 or 9 described method for stamping, it is characterized in that said one-step solidification time 10-20s, the time 20-50s of regelate.
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| CN102566262B (en) | 2013-06-19 |
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