CN201926865U - Integral wafer nano-imprinting device - Google Patents
Integral wafer nano-imprinting device Download PDFInfo
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- CN201926865U CN201926865U CN2010206737023U CN201020673702U CN201926865U CN 201926865 U CN201926865 U CN 201926865U CN 2010206737023 U CN2010206737023 U CN 2010206737023U CN 201020673702 U CN201020673702 U CN 201020673702U CN 201926865 U CN201926865 U CN 201926865U
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Abstract
The utility model relates to an integral wafer nano-imprinting device, which comprises operation tables, an integral wafer coated with resist, an injector for demoulding, a template, an impressing head, a pressure pipeline, a vacuum pipeline and an ultraviolet light source. The template is fixed to the bottom of the impressing head, the injector for demoulding is arranged on the lateral side of the lower portion of the template, the pressure pipeline and the vacuum pipeline are connected with air inlet holes on two sides of the impressing head operation table surface, the integral wafer coated with resist is fixed on the wafer operation table, and the ultraviolet light source is positioned above the impressing head. The method includes firstly, pretreatment process, secondly, impressing process, thirdly, solidifying process, and fourthly, demoulding process. The integral wafer nano-imprinting device is simple in structure, low in cost, high in productivity, high in precision and large in impressing area, and suitable for scale production and integrally impressing of uneven wafers, and can be used for scale production of high-density discs, micro-optical instruments, micro-fluidic instruments and the like, and especially suitable for imaging of integral wafers of photonic crystal LEDs.
Description
Technical field
The utility model relates to a kind of device of full wafer wafer nano impression, to realize the graphical of photonic crystal LED full wafer wafer, belongs to minute manufacturing and optoelectronic device manufacturing technology field.
Background technology
(Nanoimprint Lithography is a kind of brand-new micro-nano patterned method NIL) to nano-imprint lithography, and it is that a kind of stress deformation that uses mould to pass through resist is realized its patterned technology.Compare with other micro-nano manufacture method, NIL has high resolution, Ultra Low Cost (internal authority mechanism assesses the NIL of equal production technique than the low at least order of magnitude of traditional optical projection lithography) and large-duty characteristics, especially has outstanding advantage in large area micro-nano rice structure and complex three-dimensional micro nano structure manufacture view.Along with the widespread use of nano-imprint lithography in fields such as high brightness photon crystal LED, compact disk medium (HDD), optical component (optical waveguide, micro optical lens, grating), micro-fluidic devices, demand for large tracts of land, the whole audience, full wafer wafer imprint process is more and more urgent, and is also more and more high for the requirement of impression area, replica precision simultaneously.The method that realizes large tracts of land or full wafer wafer nano impression at present mainly contains two kinds: first kind is to adopt stepping to repeat nano-imprint process (Step-and-repeat NIL); Second kind is to adopt single step full wafer wafer nano impression.Repeating nano-imprint process realization large-area graphs method with the employing stepping compares, adopt full wafer wafer (wafer scale) nano impression (Full wafer NIL, Wafer-level NIL, Wafer scale NIL) has all significant advantages such as even high conformity of throughput rate height, figure.But full wafer wafer nano-imprint process also is faced with many new challenge: how (1) applies the force of impression of uniformity in large tracts of land.The force of impression skewness causes the reduction of replica precision on the one hand, and for the template or the substrate of hard brittle material, the inhomogeneous of force of impression very easily causes it to break on the other hand.Wafer size is from early stage 4inch and 6inch, develop into 8inch, until current and 12inch (300 millimeters), and following 18inch (450 millimeters), along with the increase of wafer area, mean that the cost of manufacture of per unit area reduces, the lifting of overall production capacity.But,, how on large-area wafer, to obtain the more difficult of the force of impression change of uniformity for nano-imprint process along with the continuous increase of wafer size.More and more higher for stamp work platform and impression mechanism performance demands; (2) how to reduce force of impression.Contact in order to realize that mould and full wafer wafer are complete, inhomogeneity, quick, the complete micro-nano cavity body structure of filling mould of liquid resist, repeating nano-imprint process with stepping compares with the small size imprint process, the force of impression that full wafer wafer impression need more arrive, big force of impression will cause mould to produce distortion, particularly serious for its distortion of soft mold, this will cause the replica precision reduction, have defective, even graph copying failure; (3) how to eliminate bubble.How to eliminate bubble is the very stubborn problem that nano-imprint process faced always, and there is defective in the figure that the existence of bubble will cause duplicating, and large area imprinting very easily produces bubble, and eliminating bubble in the large area imprinting process is very insoluble problem; (4) demoulding difficulty.The knockout press that large tracts of land need more arrive, mold damage and the figure that duplicates easily; (5) whole imprinting area obtains uniformity and thin residual layer.Imprinting area at the full wafer wafer obtains uniformity and thin residual layer, for realizing that high-quality figure transfer plays conclusive effect.In addition, different and traditional silicon-based nano imprint process, adopt NIL processing photonic crystal LED chip also to face a following difficult problem: (1) wafer out-of-flatness has the protrusion of surface of several micron-scales.Tens microns warpage is the inconsistent result of backing material expansion coefficient, and such as silit or sapphire and epitaxially grown semiconductor material, as gallium nitride, its growth temperature is higher than 900 ℃.This two layers of material can form the warpage structure of similar potato chips in fact as bimetallic strip.Thermal stress has also hindered uses larger sized wafer.The table projection is epitaxially grown secondary product, if the lattice of substrate and semiconductor material can not mate fully, will produce projection (2) wafer face is not to clean very much, has dirt; (3) in highlighted LED produced, in order to save the epitaxially grown cost of MOCVD, development in future trend was to use large-sized substrate, for example 4 cun or 6 cun wafers.Yet the bending that the epitaxial growth meeting causes large-sized substrates then all the more obviously, in follow-up photoetching process, utilize mode such as vacuum suction to compensate this bending by force and might cause substrate cracking with the high resolving power that exchanges in the photoetching; (4) clean room of present most of LED manufacturer all designs more than 1000 grades, if use common nano imprint lithography, airborne particulate contaminants will reduce the yield rate of stamping structure greatly and damage template, and the great number cost is paid in manufacturer's production environment transformation of will having nothing for it but.Therefore graphical for photonic crystal LED, press for a kind of new full wafer wafer nano-imprint process of exploitation, to realize duplicating of 8inch, 12inch full wafer wafer figure, especially realizes towards photonic crystal LED large tracts of land full wafer wafer graphical.
The utility model content
The utility model faces at full wafer wafer nano impression: the force of impression of large tracts of land uniformity, force of impression and challenging problems such as demoulding exertin, bubble elimination, uniformity and thin residual layer thickness, effective large tracts of land release method that need be as far as possible little, impression for the LED epitaxial wafer also faces the wafer out-of-flatness, wafer has dirt, is the frangible backing material of fragility.Existing nano-imprint process is difficult to satisfy the requirement of the graphical low cost of photonic crystal LED full wafer, scale manufacturing.The utility model provides a kind of device of full wafer wafer nano impression for this reason, and the method that graphically provides a kind of low cost, simple, the suitable scale of technology to make of photonic crystal LED full wafer wafer is provided for it.
The ultimate principle that the utility model proposes large tracts of land full wafer wafer nano-imprint process is: introduce the transparent soft template of a kind of three-layer composite structure, moulding process adopts from the template center position to the two side directions method of homogeneity contact printing gradually, based on new formwork structure and adopt under auxiliary force of impression of gas and the capillary force acting in conjunction, realize that force of impression evenly distributes, eliminates bubble, and under little force of impression, realize duplicating of figure, guarantee the precision and the quality of complex.Knockout course employing mould is continuous " opening " formula releasing process from wafer two side direction centers, under the acting in conjunction of pull of vacuum and horizontal force, adopt small knockout press can realize the large tracts of land demoulding, avoid the large tracts of land demoulding to need big knockout press to cause mould and copy pattern damage.Moulding process and knockout course all are axis of symmetry with the template center, and template evenly, symmetry is stressed, and carry out simultaneously impression and knockout course both sides, the quality with complex of greatly boosting productivity.
To achieve these goals, the utility model is taked following technical solution:
A kind of device of full wafer wafer nano impression, it comprises: worktable, be coated with the full wafer wafer that is covered with resist, nozzle, template, imprint head, pressure piping, vacuum line and the ultraviolet source that the demoulding is used; Wherein, template is fixed in the bottom surface of imprint head, and the template lower side is provided with the nozzle that the demoulding is used; Pressure piping links to each other with the air admission hole of vacuum line with imprint head work top two sides; Being coated with the full wafer wafer that is covered with resist is fixed on the wafer work platform; Ultraviolet source places on the imprint head.
Described template is the transparent soft mold of three-layer composite structure, comprises structural sheet, elastic layer and supporting layer, and wherein structural sheet comprises the micro nano structure figure that will duplicate, and elastic layer is positioned on the structural sheet, and supporting layer is positioned on the elastic layer; Structural sheet is consistent with the supporting layer size, and the elastic layer size is greater than structural sheet and supporting layer size; Elastic layer is fixed in the bottom of imprint head.
The thickness of described structural sheet is the 100-200 micron; The thickness of elastic layer is the 400-700 micron; The thickness of supporting layer is the 100-200 micron; The material of structural sheet and supporting layer is hard PDMS, and its hardness is 3-5 times that elastic layer uses PDMS hardness; Elastic layer is to have the soft PDMS material of good buckling deformation performance, and its Young modulus scope is at 1～10N/mm.
Described imprint head is made up of work top and support regulating block, the bottom of work top is provided with the groove that matches with template, and the pressure port array of circular apertures that is positioned at the work top two sides is connected with vacuum passage with work top pressure inside path respectively with the vacuum passage array of circular apertures.
A kind of method for stamping that adopts the device of full wafer wafer nano impression, it comprises the steps:
1) preprocessing process
Template is adsorbed on imprint head by vacuum mode;
2) moulding process
At first, from the template center position, initial vacuum state is converted to pressure state, under auxiliary force of impression of gas and capillary force acting in conjunction, the elastic layer of template vertically produces flexural deformation in the center, the part begins to contact the resist that is coated with on the full wafer wafer that is covered with resist, and the micro nano structure cavity of template center position begins the filling by resist institute; Subsequently, one by one vacuum state is converted to pressure state from the template center position to two side directions, the structural sheet of template and the contact area of resist constantly enlarge, contact fully with resist on being coated with the full wafer wafer that is covered with resist until whole formwork structure layer, all the micro nano structure cavitys in the template are by the filling of resist institute; At last, the pressure of all pressure port keeps uniformity consistency to increase, and realizes the complete filling of liquid anticorrosive additive material in template micro nano structure cavity, and is thinned to predetermined residual layer thickness;
3) solidification process
Open ultraviolet source, ultraviolet light sees through template resist is exposed, and fully solidifies liquid resist;
4) knockout course
At first, from wafer outermost both sides, closing presure path, open vacuum passage, open the nozzle that the demoulding is used simultaneously, under the acting in conjunction of the horizontal force that vacuum line pull of vacuum and nozzle pressurized air produce, begin to be separated from each other with wafer from the template outermost; Subsequently, two side direction template center change back vacuum state with pressure one by one from wafer, realize template demoulding of " opening " formula continuously from center, wafer lateral, and knockout press is making a concerted effort of the horizontal force that produces of vacuum line pull of vacuum and nozzle pressurized air; At last, template center position and wafer are separated, and the realization template is separated fully with wafer, finishes the demoulding.
Described step 2) and in the step 4), moulding process and knockout course are axis of symmetry with the template center, and template evenly, symmetry is stressed, and carry out simultaneously impression and knockout course both sides.
In the described step set time 20-50s.
Described ultraviolet source is the outer tribute lamp of high-power purple, power 100-1000W.
Notable feature of the present utility model is:
1) template used of the utility model is the transparent soft template of three-layer composite structure, comprises by structural sheet, elastic layer and supporting layer group.Wherein the figure that will duplicate is on structural sheet; Structural sheet adopts hard PDMS, reduces because the local deformation that the big even substrate out-of-flatness of force of impression, force of impression skewness causes the mould micro-nano structure is guaranteed the complex precision.Middle elastic layer adopts soft PDMS resilient material (being easy to produce bigger buckling deformation), the longitudinal bending performance that template had, in moulding process, guarantee on the one hand formwork structure layer and wafer be gradually with contact uniformly, the surface irregularity degree that adapts to the large tracts of land substrate, restriction is because the defect area that particulate contaminants caused on the other hand.Hard supporting layer, guaranteed that mould does not produce horizontal tensile deformation under pressure in moulding process on the one hand, guarantee on the other hand when template with after wafer contacts fully, effect lower bolster at the auxiliary force of impression of gas can obtain the force of impression of uniformity, thereby guarantees to apply the force of impression of uniformity on large tracts of land full wafer wafer.
2) the utility model moulding process adopts from the template center position to the two side directions strategy of homogeneity contact gradually, characteristics and significant advantage that it is outstanding: (1) by template and substrate gradually, homogeneity is little contacts, reduce force of impression on the one hand, avoid traditional full wafer wafer impression to need big force of impression, cause soft template to produce bigger distortion, influence the precision and the quality of replica; Can adapt to the imprint process requirement that the large tracts of land substrate has the surface irregularity degree on the other hand.(2) eliminated full wafer wafer impression " bubble " defective." bubble " that moulding process produced can in time be got rid of.
3) the utility model is by under auxiliary force of impression of gas and the capillary force acting in conjunction, realize duplicating of figure, its force of impression is making a concerted effort of auxiliary force of impression of gas and capillary force, and outstanding characteristics and significant advantage: (1) is easy to realize that template contacts with the completeness of wafer; (2) can on large tracts of land full wafer wafer, guarantee that pressure is even; (3) can adopt less force of impression, avoid the distortion of soft template, improve the quality and the precision of complex.
4) the utility model knockout course adopt template from wafer two side direction centers " opening " formula releasing process continuously.Outstanding characteristics and significant advantage: (1) traditional release method, directly large tracts of land template and full wafer wafer are separated from each other, need very big knockout press on the one hand, very easily cause the damage and failure of template and the figure that is duplicated on the other hand.The releasing process knockout press that the utility model uses is little, and is little for the damage of mould, and in the serviceable life that can improve mould, the destruction for the figure that is duplicated also can be reduced to minimum simultaneously; (2) knockout press is symmetrically distributed in the knockout course, and whole knockout course knockout press keeps evenly.Relatively and other releasing process (mould is from the other side of wafer one side direction, the perhaps full wafer wafer demoulding simultaneously), the utility model from wafer two side direction centers continuously " opening " formula releasing process can guarantee template center (position of area maximum) finally demould, though template and substrate contact area maximum at this moment, but the demoulding has all been finished in both sides, under the acting in conjunction of both sides (pull of vacuum and horizontal force), be easy to the demoulding.
5) the utility model is realized template demoulding of " opening " formula continuously from center, wafer lateral by under pull of vacuum and horizontal force (nozzle) acting in conjunction, and its knockout press is making a concerted effort of pull of vacuum and horizontal force." open " demoulding of formula continuously and avoided big knockout press on the one hand, avoid the damage of knockout course on the other hand template and copy pattern.
6) the utility model moulding process and knockout course are axis of symmetry with the template center, and template is even, symmetry is stressed, and impression and knockout course both sides are carried out the production efficiency height simultaneously.
7) the utility model does not rely on balance that precision optical machinery applies, evenly, with the force of impression of Surface Vertical, has simplified device structure.
Significant advantage of the present utility model also is: (1) has the technological ability of realizing full wafer wafer impression on 8inch and 12inch even bigger wafer; (2) under large tracts of land full wafer wafer impression and the irregular condition of wafer, can realize that template is complete with the full wafer wafer, homogeneity contacts; (3) moulding process and knockout course template are stressed symmetrically and evenly, and the force of impression and the knockout press that need are little, and template deformation is little, complex precision height; (4) moulding process and knockout course are symmetry with the template center, and impression and demoulding both sides are carried out the throughput rate height simultaneously; (5) force of impression is making a concerted effort of auxiliary force of impression of gas and capillary force, and force of impression is even; (6) under pull of vacuum and horizontal force (nozzle) acting in conjunction, template is the demoulding of " opening " formula continuously from center, wafer lateral, and knockout press is little, and is little with the figure damage of duplicating for template, is easy to the demoulding, graph copying quality height.
The manufacturing that realizes full wafer wafer impression high rate/low cost production, high precision and scale of the present utility model; the utility model is suitable for the manufacturing of compact disk (HDD), micro-optical device, microfluidic device etc., especially is fit to the full wafer wafer impression (comprising the graphical and substrate graph of exiting surface table) of photonic crystal LED
Description of drawings
Fig. 1 is the utility model producing device structural representation.
Fig. 2 is the utility model formwork structure synoptic diagram.
Fig. 3 a is the structural representation of the utility model imprint head.
Fig. 3 b is the vertical view of Fig. 3 a.
Fig. 4 a is the utility model full wafer wafer nano-imprint process step synoptic diagram.
Fig. 4 b is the utility model full wafer wafer nano-imprint process step synoptic diagram.
Fig. 4 c is the utility model full wafer wafer nano-imprint process step synoptic diagram.
Fig. 4 d is the utility model full wafer wafer nano-imprint process step synoptic diagram.
Fig. 4 e is the utility model full wafer wafer nano-imprint process step synoptic diagram.
Fig. 4 f is the utility model full wafer wafer nano-imprint process step synoptic diagram.
Fig. 4 g is the utility model full wafer wafer nano-imprint process step synoptic diagram.
Embodiment
Below in conjunction with drawings and Examples the utility model is described in further detail.
Among Fig. 1, it comprises: worktable 1, be coated with the full wafer wafer 2 that is covered with resist, nozzle 3, template 4, the imprint head 5 that the demoulding is used, pressure piping 6, vacuum line 7 and ultraviolet source 8; Wherein, template 4 is fixed in the bottom surface of imprint head 5, and template 4 lower side are provided with the nozzle 3 that the demoulding is used; Pressure piping 6 links to each other with the air admission hole of vacuum line 7 with imprint head work top two sides; Being coated with the full wafer wafer 2 that is covered with resist is fixed on the wafer work platform 1; Ultraviolet source 8 places on the imprint head 5.
Among Fig. 2, described template 4 is the transparent soft mold of three-layer composite structure, and wherein ground floor (orlop) is a structural sheet 401, and the second layer (middle layer) is that elastic layer 402, the three layers (the superiors) is a supporting layer 403.Described structural sheet 401 comprises the micro nano structure figure 40101 that will make, and elastic layer 402 is positioned on the structural sheet 401, and supporting layer 403 is positioned on the elastic layer 402.The thickness range of structural sheet 401 is 100-200 microns; The thickness range of elastic layer 402 is 400-700 microns; The thickness range of supporting layer 403 is 100-200 microns.Structural sheet 401, elastic layer 402 and supporting layer 403 materials are PDMS, but its hardness difference.The material of structural sheet 401 and supporting layer 403 is hard PDMS (dimethyl silicone polymer), and its hardness is 3-5 times that elastic layer 402 uses PDMS hardness; Elastic layer 402 is selected for use has the soft PDMS material of good buckling deformation performance, and its Young modulus is 5N/mm.Structural sheet 401 is consistent with supporting layer 403 sizes, (determine according to the size of wafer size by concrete numerical value than structural sheet 401 and the big 60-150 millimeter of supporting layer 403 sizes for elastic layer 402, wafer size is big more, and this numerical value is bigger), promptly the size of elastic layer 402 is 30-75 millimeters.Elastic layer 402 is fixed on the work top 501 of imprint head 5, and under the original state, supporting layer 403 is adsorbed in the groove 50101 in the imprint head work top 501.
The structural representation of the utility model imprint head is referring to Fig. 3 a, Fig. 3 b.Imprint head 5 has the function of following three aspects, (1) fixed form 4; (2) realize that pressure and vacuum in pressure port and the vacuum passage evenly distribute; (3) regulate template 4 and the impression that is coated with 2 of full wafer wafers that are covered with resist apart from (generally at the 30-150 micron).Imprint head 5 comprises work top 501, supports regulating block 502.Wherein make table top 501 and realize preceding two functions, support regulating block 502 and realize the 3rd function.Groove 50101 its diameters in the work top 501 are bigger 10 millimeters than the supporting layer 403 of template 4, and depth dimensions is consistent with supporting layer 403 sizes of template 4, and elastic layer 402 is fixed in the bottom surface of work top 501.When elastic layer 402 was fixed on the bottom surface of work top 501, under original state, the supporting layer 403 of template 4 was attracted in the groove 50101 of work top 501, guaranteed that template 4 contacts with the tight of work top 501.The pressure port array of circular apertures 50102 that is positioned at work top 501 two sides is connected with vacuum passage 50105 with work top 501 pressure inside paths 50104 respectively with vacuum passage array of circular apertures 50103 inboards, realizes that the pressure and the vacuum of pressure port and vacuum passage evenly distributes.Pressure port array of circular apertures 50102 in the work top 501 and vacuum passage array of circular apertures 50103 outsides respectively with pressure piping 6 with link to each other for vacuum tube road 7.
Full wafer wafer with 4 inch (about 100 millimeters) GaN photonic crystal LED is embossed to embodiment, in conjunction with the utility model full wafer wafer nano-imprint process step synoptic diagram 4, describes the principle and the concrete processing step of full wafer wafer nano-imprint process in detail.
Wafer, template and some technological parameters are provided with as follows among the embodiment: wafer is 4 an inch GaN base epitaxial wafer, need impress out photon crystal structure at p type semiconductor layer, wherein the geometric parameter of photonic crystal is: grating constant 600nm, and the diameter 200nm of circular hole, the degree of depth in hole is 80nm.Resist uses the mr-UVCur06 of Micro resist technology company, is 300nm at the thickness of GaN base epitaxial wafer spin coating.Measure-alike (diameter is 100 millimeters) of the structural sheet 401 of template 4 and the size of supporting layer 403 and wafer, the thickness of structural sheet 401 and supporting layer 403 is identical to be 100 microns, and all using hardness is the hard PDMS material of 3 times of elastic layer materials.The diameter of elastic layer 402 is 180 millimeters, and the thickness of elastic layer is 400 microns, and its material is common soft PDMS material, and its Young modulus is 5N/mm.Traditional nano impression soft mold PDMS manufacturing process is adopted in the manufacturing of template, adopt three pouring technologies to make structural sheet 401, elastic layer 402 and supporting layer 403 respectively, promptly at first use liquid hard PDMS material cast master mold to make structural sheet 401, adopt soft liquid PDMS material to continue cast then and make elastic layer 402, the last hard PDMS made supporting layer 403 of pouring liquid.The master mold of manufacturing structure layer is a silicon mould, and adopt interference lithography to produce nano-pillar array structure on 4 inch whole silicon wafer, the geometric parameter of nano-pillar: cycle 600nm, the diameter 200nm of cylinder highly is 100nm.The pressure of pressure port is 80mBar.
1) preprocessing process
At the thick resist of the even spin coating shop 300nm of 4 inch GaN epitaxial wafers, subsequently this is coated with the full wafer wafer 2 that is covered with resist and is fixed on the worktable 1.Imprint head 5 be coated with the full wafer wafer 2 that is covered with resist and align after, impression mechanism descends, the support regulating block 502 in imprint head 5 (it highly is 80 microns) contacts with worktable 1.Closing presure path 6 is opened vacuum passage 7, and the supporting layer 403 of template 4 is adsorbed in the groove 50101 in the imprint head work top 501.
2) moulding process
At first, from the template center position, initial vacuum state is converted to pressure state, under the auxiliary force of impression effect of gas (pressurized air that air compressor produces is as the impression driving force), elastic layer 402 vertically produces flexural deformation in the center, the part begins to contact the resist on the substrate, and under auxiliary force of impression of gas and capillary force acting in conjunction, the micro nano structure cavity of mold center position begins the filling by resist institute; Shown in Fig. 4 a; Subsequently, one by one vacuum state is converted to pressure state from the mold center position to two side directions, mould structure layer 401 constantly enlarges with the contact area of resist, contact fully with resist on the full wafer wafer until entire die structural sheet 401, all the micro nano structure cavitys in the mould structure layer 401 are by the filling of resist institute; Shown in Fig. 4 b and 4c; At last, the pressure of all pressure port keeps uniformity to increase, and realize the complete filling of liquid anticorrosive additive material in mould micro nano structure cavity, and the attenuate residual layer is to preset thickness.Shown in Fig. 4 c.
3) solidification process
Open ultraviolet source 8, ultraviolet light sees through 4 pairs of resist exposures of mould, fully solidifies liquid resist.Set time 40s, shown in Fig. 4 d.
4) knockout course
At first, from wafer outermost both sides, the closing presure path is opened vacuum passage, opens the nozzle 3 that the demoulding is used simultaneously, under pull of vacuum and horizontal force acting in conjunction, begins to be separated from each other with wafer from the mould outermost, shown in Fig. 4 e; Subsequently, two side direction mold center change back vacuum state with pressure one by one from wafer, realize mould demoulding of " opening " formula continuously from center, wafer lateral, and knockout press is making a concerted effort of pull of vacuum and horizontal force, shown in Fig. 4 f; At last, mold center position and wafer are separated, and the realization mould separates fully with wafer, finishes the demoulding, shown in Fig. 4 g.
In addition, those skilled in the art also can do other variation in the utility model spirit.Certainly, the variation that these are done according to the utility model spirit all should be included in the utility model scope required for protection.
Claims (5)
1. the device of a full wafer wafer nano impression, it is characterized in that, it comprises: worktable (1), be coated with the full wafer wafer (2) that is covered with resist, nozzle (3), template (4), the imprint head (5) that the demoulding is used, pressure piping (6), vacuum line (7) and ultraviolet source (8); Wherein, template (4) is fixed in the bottom surface of imprint head (5), and template (4) lower side is provided with the nozzle (3) that the demoulding is used; Pressure piping (6) links to each other with the air admission hole of vacuum line (7) with imprint head work top two sides; Being coated with the full wafer wafer (2) that is covered with resist is fixed on the wafer work platform (1); Ultraviolet source (8) places on the imprint head (5).
2. the device of full wafer wafer nano impression as claimed in claim 1, it is characterized in that, described template (4) is the transparent soft mold of three-layer composite structure, comprise structural sheet (401), elastic layer (402) and supporting layer (403), wherein structural sheet (401) comprises the micro nano structure figure (40101) that will duplicate, elastic layer (402) is positioned on the structural sheet (401), and supporting layer (403) is positioned on the elastic layer (402); Structural sheet (401) is consistent with supporting layer (403) size, and elastic layer (402) size is greater than structural sheet (401) and supporting layer (403) size; Elastic layer (402) is fixed in the bottom of imprint head (5).
3. the device of full wafer wafer nano impression as claimed in claim 2 is characterized in that, the thickness of described structural sheet (401) is the 100-200 micron; The thickness of elastic layer (402) is the 400-700 micron; The thickness of supporting layer (403) is the 100-200 micron; The material of structural sheet (401) and supporting layer (403) is hard PDMS, and its hardness is 3-5 times that elastic layer (402) uses PDMS hardness; For to have the soft PDMS material of good buckling deformation performance, its Young modulus scope is at 1～10N/mm for elastic layer (402).
4. the device of full wafer wafer nano impression as claimed in claim 1 or 2, it is characterized in that, described imprint head (5) is made up of work top (501) and support regulating block (502), the bottom of work top (501) is provided with the groove (50101) that matches with template (4), and the pressure port array of circular apertures (50102) that is positioned at work top (501) two sides is connected with vacuum passage (50105) with work top (501) pressure inside path (50104) respectively with vacuum passage array of circular apertures (50103).
5. the device of full wafer wafer nano impression as claimed in claim 1 is characterized in that, described ultraviolet source is the outer tribute lamp of high-power purple, power 100-1000W.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206737023U CN201926865U (en) | 2010-12-22 | 2010-12-22 | Integral wafer nano-imprinting device |
| US13/521,811 US8741199B2 (en) | 2010-12-22 | 2011-05-23 | Method and device for full wafer nanoimprint lithography |
| PCT/CN2011/000878 WO2012083578A1 (en) | 2010-12-22 | 2011-05-23 | Device and method for nano-imprinting full wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010206737023U CN201926865U (en) | 2010-12-22 | 2010-12-22 | Integral wafer nano-imprinting device |
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| CN201926865U true CN201926865U (en) | 2011-08-10 |
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Cited By (5)
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| CN102096315A (en) * | 2010-12-22 | 2011-06-15 | 青岛理工大学 | Device and method for nanoimprinting of full wafer |
| CN102346369A (en) * | 2011-09-08 | 2012-02-08 | 青岛理工大学 | Nanoimprint lithography machine for whole wafer |
| CN102566262A (en) * | 2012-02-29 | 2012-07-11 | 青岛理工大学 | Device and method suitable for carrying out wafer-level nano imprinting on uneven substrate |
| CN102866582A (en) * | 2012-09-29 | 2013-01-09 | 兰红波 | Nanometer impression device and nanometer impression method for high-brightness light-emitting diode (LED) graphics |
| CN105159029A (en) * | 2015-10-10 | 2015-12-16 | 兰红波 | Large-area micro-nano imaging method and device |
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2010
- 2010-12-22 CN CN2010206737023U patent/CN201926865U/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102096315A (en) * | 2010-12-22 | 2011-06-15 | 青岛理工大学 | Device and method for nanoimprinting of full wafer |
| CN102096315B (en) * | 2010-12-22 | 2012-04-04 | 青岛理工大学 | Device and method for nanoimprinting of full wafer |
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| CN102346369B (en) * | 2011-09-08 | 2013-04-10 | 青岛理工大学 | Nanoimprint lithography machine for whole wafer |
| CN102566262A (en) * | 2012-02-29 | 2012-07-11 | 青岛理工大学 | Device and method suitable for carrying out wafer-level nano imprinting on uneven substrate |
| CN102566262B (en) * | 2012-02-29 | 2013-06-19 | 青岛理工大学 | Device and method suitable for carrying out wafer-level nano imprinting on uneven substrate |
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| CN105159029A (en) * | 2015-10-10 | 2015-12-16 | 兰红波 | Large-area micro-nano imaging method and device |
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