CN104898371A - Nano-imprinting easy demoulding method - Google Patents
Nano-imprinting easy demoulding method Download PDFInfo
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- CN104898371A CN104898371A CN201510355304.4A CN201510355304A CN104898371A CN 104898371 A CN104898371 A CN 104898371A CN 201510355304 A CN201510355304 A CN 201510355304A CN 104898371 A CN104898371 A CN 104898371A
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- seal
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
The invention discloses a nano-imprinting easy demoulding method. The easy demoulding method is characterized in that a seal and a colloid are not directly separated at one step but performed by stages by combining lifting and pressing. The process specifically includes the steps of a), lifting up the seal to one third of the height of a cavity or a protrusion of the seal; b), pressing the seal to enable the seal to contact with the colloid completely once more; c), lifting the seal once more up to two third of the cavity or the protrusion of the seal; d), pressing the seal to enable the seal to contact with the colloid completely once more; e), lifting up the seal till to be demoulded completely. The process is simple and convenient, and demoulding upon nano imprinting is benefited.
Description
Technical field
The present invention relates to the easy release method of a kind of nano impression, belong to microelectronics, micro-nano preparing technical field.
Background technology
At present, microelectronic processing technique enters nanometer era, and along with the further abbreviation of characteristic dimension, Next Generation Lithography is badly in need of solving.Nanometer embossing very likely becomes Next Generation Lithography, the advantage that technique is simple, cost is low because it has, efficiency is high.Because it is physically based deformation distortion copying pattern, do not affect by factors such as optical diffractions, it has higher resolution, can process the pattern of 5 nanometers.Nano-imprinting seal preparation cost is expensive, preparation time is long, is easy to damage, so must improve the seal lost of life process cycle of nano impression to greatest extent in moulding process.Nano-imprinting seal rat or sunk structure more, mean with the surface area of polymer contact more, more easily cause the adhesion between polymkeric substance and seal.Comparatively general method reduces adhesion phenomenon by applying the anti-stick interconnect layer of one deck to seal surface at present.This method can not eliminate that adhesion causes completely seal wearing and tearing and replication defective, for reducing the problem brought due to adhesion problems further, the present invention proposes a kind of fairly simple direct method and improves nano-imprint process further.
Summary of the invention
Object: in order to overcome the deficiencies in the prior art, the invention provides the easy release method of a kind of nano impression, makes the easy demoulding of nano-imprinting seal, and technique is simple, cost is lower.
Technical scheme: for solving the problems of the technologies described above, the technical solution used in the present invention is:
The easy release method of a kind of nano impression, is characterized in that: not disposable directly by seal and colloid separately, but lift with press down combination and carry out stage by stage.
Specifically comprise the following steps:
A) seal is upwards lifted 1/3rd of seal cavity or height of projection;
B) seal is pressed down, again contact completely with colloid;
C) seal is upwards lifted 2/3rds of seal cavity or height of projection again;
D) seal is pressed down, again contact completely with colloid;
E) seal is upwards lifted until the demoulding completely.
Preferably, the easy release method of described nano impression, is characterized in that: the material of described seal is silicon, silicon dioxide or nickel.
Preferably, the easy release method of described nano impression, is characterized in that: the material of described colloid is polymethylmethacrylate or polystyrene.
Beneficial effect: the easy release method of nano impression provided by the invention, after have employed technique scheme, make nanometer technology step ejection phase ratio be easier to the demoulding, and technique is also fairly simple, with low cost.Make the easy demoulding of nano-imprinting seal, and technique is simple, cost is lower.
Embodiment
Below in conjunction with specific embodiment, the present invention is further described.
embodiment 1:
Adopt focused ion beam to process one group of nano-pattern on a silicon substrate, the ditch flute length of etching and wide be 100nm, the degree of depth is 300nm, obtains nano-imprinting seal, and polymethylmethacrylate selected by colloid.The step of ejection phase is as follows:
A, seal is upwards lifted 100nm;
B, seal to be pressed down, again contact completely with colloid;
C, seal is upwards lifted 200nm again;
D, seal to be pressed down, again contact completely with colloid;
E, seal upwards to be lifted until the demoulding completely.
embodiment 2:
Adopt beamwriter lithography and reactive ion etching in silicon dioxide substrates, process nanometer cylinder pattern, outstanding nanometer cylinder pattern diameter 60nm, be highly 60nm, obtain nano-imprinting seal, polystyrene selected by colloid.The step of ejection phase is as follows:
A, seal is upwards lifted 20nm;
B, seal to be pressed down, again contact completely with colloid;
C, seal is upwards lifted 40nm again;
D, seal to be pressed down, again contact completely with colloid;
E, seal upwards to be lifted until the demoulding completely.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (4)
1. the easy release method of nano impression, is characterized in that: not disposable directly by seal and colloid separately, but lift with press down combination and carry out stage by stage.
2. the easy release method of nano impression according to claim 1, is characterized in that, specifically comprise the following steps:
A) seal is upwards lifted 1/3rd of seal cavity or height of projection;
B) seal is pressed down, again contact completely with colloid;
C) seal is upwards lifted 2/3rds of seal cavity or height of projection again;
D) seal is pressed down, again contact completely with colloid;
E) seal is upwards lifted until the demoulding completely.
3. the easy release method of nano impression according to claim 2, is characterized in that: the material of described seal is silicon, silicon dioxide or nickel.
4. the easy release method of nano impression according to claim 2, is characterized in that: the material of described colloid is polymethylmethacrylate or polystyrene.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510355304.4A CN104898371A (en) | 2015-06-25 | 2015-06-25 | Nano-imprinting easy demoulding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510355304.4A CN104898371A (en) | 2015-06-25 | 2015-06-25 | Nano-imprinting easy demoulding method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104898371A true CN104898371A (en) | 2015-09-09 |
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| CN201510355304.4A Pending CN104898371A (en) | 2015-06-25 | 2015-06-25 | Nano-imprinting easy demoulding method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1797193A (en) * | 2004-12-30 | 2006-07-05 | 中国科学院电工研究所 | Method and device for fabricating graphical stamp in Nano grade |
| US20100308008A1 (en) * | 2009-06-09 | 2010-12-09 | Tsinghua University | Nanoimprint resist, nanoimprint mold and nanoimprint lithography |
| US20110084423A1 (en) * | 2009-10-14 | 2011-04-14 | Canon Kabushiki Kaisha | Imprint apparatus and manufacturing method of commodities |
| CN102566262A (en) * | 2012-02-29 | 2012-07-11 | 青岛理工大学 | Device and method suitable for wafer-level nanoimprint lithography of non-flat substrate |
| CN102591143A (en) * | 2012-02-29 | 2012-07-18 | 青岛理工大学 | Large-area nano-imprint lithography device and method |
-
2015
- 2015-06-25 CN CN201510355304.4A patent/CN104898371A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1797193A (en) * | 2004-12-30 | 2006-07-05 | 中国科学院电工研究所 | Method and device for fabricating graphical stamp in Nano grade |
| US20100308008A1 (en) * | 2009-06-09 | 2010-12-09 | Tsinghua University | Nanoimprint resist, nanoimprint mold and nanoimprint lithography |
| US20110084423A1 (en) * | 2009-10-14 | 2011-04-14 | Canon Kabushiki Kaisha | Imprint apparatus and manufacturing method of commodities |
| CN102566262A (en) * | 2012-02-29 | 2012-07-11 | 青岛理工大学 | Device and method suitable for wafer-level nanoimprint lithography of non-flat substrate |
| CN102591143A (en) * | 2012-02-29 | 2012-07-18 | 青岛理工大学 | Large-area nano-imprint lithography device and method |
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Application publication date: 20150909 |
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