CN115138536B - Vacuum treatment method and device for glue homogenizing bubbles of embedded chip packaging substrate - Google Patents
Vacuum treatment method and device for glue homogenizing bubbles of embedded chip packaging substrate Download PDFInfo
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- CN115138536B CN115138536B CN202210752592.7A CN202210752592A CN115138536B CN 115138536 B CN115138536 B CN 115138536B CN 202210752592 A CN202210752592 A CN 202210752592A CN 115138536 B CN115138536 B CN 115138536B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C13/00—Means for manipulating or holding work, e.g. for separate articles
- B05C13/02—Means for manipulating or holding work, e.g. for separate articles for particular articles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
- B05C5/0208—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work for applying liquid or other fluent material to separate articles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a vacuum treatment method and a device for homogenizing glue bubbles of an embedded chip packaging substrate, which aim at an embedded chip packaging mode, adopt a glue homogenizing machine device with a vacuum environment, spin-coat photoresist before spin-coating the photoresist or under the vacuum environment and perform bubble removal treatment, so that the surface is flat after glue homogenization, and no bubble remains in the inside. The invention can realize the requirement of the subsequent process on the photoresist by only coating the photoresist once, does not need to coat the photoresist for multiple times, greatly simplifies the process steps, has a corresponding vacuum treatment method for the photoresist with different viscosities, is beneficial to the operations of subsequent metal wiring and the like, and effectively improves the success rate and the performance of encapsulation.
Description
Technical Field
The invention relates to a technology in the field of three-dimensional integrated wafer-level packaging, in particular to a vacuum treatment method and a device for glue homogenizing bubbles of a packaging substrate of an embedded chip, and particularly relates to a vacuum treatment solution method and a corresponding device for the problem of bubble generation of glue homogenizing under the condition of deep groove gaps in an embedded chip of a grooved silicon wafer.
Background
The silicon-based embedded chip packaging process can embed gallium arsenide, gallium nitride and other compound semiconductor small chips or ceramic devices into a cavity etched and grooved on a silicon substrate, and metalize the silicon substrate and the surface layers of the grooved embedded chip cavity, so that a good grounding and electromagnetic shielding environment can be constructed. Wiring interconnections between chiplets and devices can be achieved through photolithographic processes, avoiding high frequency parasitics created by using bond wire interconnections. The silicon substrate and the photoresist are respectively silicon and non-silicon MEMS processes, a good platform is provided, richer three-dimensional structures are easy to realize, the high integration level and miniaturization of the packaging assembly are further realized, and the comprehensive performance of packaging is improved.
The silicon-based embedded chip packaging technology needs to etch and slot a corresponding cavity on a silicon substrate for embedding the chip. Etching processes can be generally classified into wet etching and dry etching. The alkaline solvent is used for contacting with the silicon substrate, and etching is performed through chemical reaction, so that the process is simple to operate, but a large slope exists in slotting, and the integration density between a small chip and a device is limited; the silicon substrate surface is bombarded by the reaction gas for etching by a dry etching method, and the method has the advantages of high precision, steep gradient, good uniformity and the like. A schematic cross section of a slotting cavity formed by wet etching and dry etching is shown in fig. 1a, the slotting edge of the wet etching is inclined, and the slotting edge of the dry etching is vertical.
However, whichever etching scheme is adopted, the size of the cavity is larger than the size of the chip in order to meet the requirement of subsequent assembly. This results in the chips not being tightly embedded in the cavities of the silicon substrate after the chip assembly is completed, and gaps must exist between the chips and the silicon substrate cavities. In a subsequent process step, as shown in fig. 1b, the silicon substrate embedded with the chip is subjected to photoresist spin coating, baking, photolithography, and the like. Because of the tension of the photoresist, the glue solution is difficult to penetrate into a narrow slot in the spin coating process, and part of air can be sealed in the narrow slot.
If the gas in the gap is not removed, the gas expands when heated in the baking process of the subsequent process and floats to the surface of the photoresist, as shown in fig. 1 c. The bubble problem in the process of embedding the chip in the baking process of photoresist seriously damages the evenness of the photoresist nearby the chip, and defects are introduced, and the periphery of the chip is often a distribution area of important wiring, so that the chip is extremely easily damaged by the bubble, and as shown in figure 1d, interconnection wiring between the small chip and the device is damaged. The problem of glue homogenizing bubbles seriously affects the success rate of the silicon-based embedded chip packaging process, so that a method must be adopted to remove the gas remained in the gap in advance.
Disclosure of Invention
The invention provides a vacuum treatment method and a device for photoresist homogenizing bubbles of an embedded chip packaging substrate, which are used for solving the problems of photoresist surface fluctuation and bubbles caused by heating of sealing gas in gaps between a small chip and a peripheral groove after photoresist is coated in the prior silicon substrate embedded chip packaging technology.
The invention is realized by the following technical scheme:
the invention relates to a spin coater device with vacuum environment, comprising: even machine organism and set up in its inside even machine cavity, high accuracy servo motor and be used for adjusting vacuum adsorption to carry thing dish adsorption pressure's year thing dish vacuum air-vent valve of thing dish, wherein: the vacuum adsorption material carrying disc for carrying the sample to be treated is arranged in the cavity of the spin coater, and is respectively connected with the vacuum pressure regulating valve of the material carrying disc and the high-precision servo motor, and the cavity vacuumizing interface, the cover plate and the rubber dropping tube opposite to the vacuum adsorption material carrying disc are arranged on the cavity of the spin coater.
The cover plate is provided with a vacuum relief valve, a cavity vacuumizing interface and a glue dripping port, the cavity vacuumizing interface is connected with a first vacuum pump through a first pressure gauge pressure regulating valve, gas in the cavity is extracted, the vacuum relief valve is used for balancing the atmospheric pressure inside and outside the cavity, and the glue dripping port is connected with a glue dripping pipe.
The glue dripping pipe is arranged on the cavity of the glue homogenizing machine and is opposite to the sample to be treated through the support, the glue dripping propelling device and the hand crank, the glue dripping propelling device is pushed by the hand crank to drip the glue in the glue dripping pipe into the cavity through the glass cover plate, and the glue dripping valve is arranged on the glue dripping pipe to lock the glue in the glue dripping pipe.
The invention relates to a vacuum treatment method for homogenizing glue bubbles of an embedded chip packaging substrate, which adopts the glue homogenizing machine device with a vacuum environment to perform bubble removal vacuum treatment on the embedded chip packaging before or after photoresist is spin-coated, so as to remove air remained in packaging gaps, realize the surface smoothness of glue solution after glue homogenizing, and avoid bubble residues in the glue solution.
The embedded chip package refers to: and packaging by adopting a silicon substrate with a groove cavity, and placing the small chip and the device to be packaged in the groove.
The inner wall surface of the groove and the surface of the silicon substrate are plated with metal, the cavity of the groove is preferably prepared by dry etching, the gap between the groove and the chip is about 10 mu m, the depth-to-width ratio can reach 21, and the gas in the gap is difficult to escape from the gap after photoresist is spin-coated.
The de-bubbling vacuum treatment specifically comprises the following steps: when the photoresist with the kinematic viscosity range of 2000-45000 cSt is adopted, the vacuum treatment of removing bubbles is carried out before spin coating the photoresist; when photoresist with the kinematic viscosity range of 0-400 cSt is adopted, spin coating the photoresist in a vacuum environment and performing bubble removal vacuum treatment.
The bubble removal vacuum treatment is carried out before spin coating the photoresist, and specifically comprises the following steps: pouring a proper amount of photoresist on a silicon substrate, placing the silicon substrate on a vacuum adsorption carrying disc, opening a second vacuum pump to enable the carrying disc to adsorb the silicon substrate, then covering a glass cover plate, closing a vacuum relief valve and a glue dripping valve, connecting the first vacuum pump with a cavity vacuumizing interface, opening the first vacuum pump to vacuumize, standing for 2min after a pressure gauge displays-0.095 MPa, at the moment, floating air remained in a packaging gap to the surface of glue solution, closing the first vacuum pump, opening a small amount of vacuum relief valve to enable the internal pressure and the external pressure of the cavity to be balanced gradually, then opening the glass cover plate, adjusting the vacuum relief valve of the carrying disc to enable the carrying disc to have no adsorption force, taking out the silicon substrate, cleaning bubbles near the surface of the glue solution by using a dropper, then placing the carrying disc again, adjusting the vacuum relief valve to enable the carrying disc to adsorb the silicon substrate, and covering the glass cover plate to perform spin coating glue homogenizing process under normal pressure.
The photoresist is spin-coated and bubble-removed in a vacuum environment, and the method specifically comprises the following steps: placing a silicon substrate on a vacuum adsorption carrying disc in a spin coater, opening a second vacuum pump to enable the carrying disc to adsorb the silicon substrate, fixing the silicon substrate on the carrying disc by using a carrying clamp, then covering a glass cover plate, closing a vacuum relief valve and a glue dropping valve, connecting a first vacuum pump with a cavity vacuumizing interface, opening the first vacuum pump to vacuumize, and keeping a pressure gauge to display-0.09 MPa, wherein a gap between a chip and a groove of the silicon substrate is also in a vacuum state; opening a glue dripping valve, rotating a hand handle to drip photoresist from a glue dripping guide pipe onto a silicon substrate in a vacuum glue homogenizing machine by pushing a glue dispensing pushing device, closing the glue dripping valve, controlling the glue homogenizing machine to uniformly glue by controlling a display touch screen control panel, standing for 2min after the glue homogenizing is completed, closing a first vacuum pump, opening a small amount of vacuum relief valve to gradually balance the internal and external pressure of a cavity, then opening a glass cover plate, extruding the photoresist into a gap between a chip and a silicon substrate groove by pressure difference under normal pressure environment, forming a concave undulating shape on the surface of the photoresist, closing a second vacuum pump to ensure that an adsorption force does not exist on a carrying disc, taking out the silicon substrate, placing the silicon substrate on a hot plate, and baking the photoresist solution to be self-leveling.
The silicon substrate is fixed on the carrying disc by the carrying clamp, and the silicon substrate is required to rotate at a high speed along with the carrying disc during spin coating, and the adsorption force is insufficient due to the fact that the vacuum adsorption carrying disc and the air pressure difference in the cavity are low after the vacuum is pumped in the spin coating machine cavity, so that the silicon substrate is required to be fixed with the carrying disc by the carrying clamp.
Technical effects
The photoresist on the surface of the silicon substrate treated by the method is flat, no bubble remains in the silicon substrate, the subsequent processes such as metallized wiring and the like are facilitated, and the success rate and the performance of packaging are improved. In addition, the method provided by the invention can realize the requirements of the subsequent procedures on the evenness of the photoresist and no bubble residue only by coating the photoresist once, does not need to coat the photoresist for multiple times, and greatly simplifies the process steps.
Drawings
FIG. 1a is a schematic cross-sectional view of a slotted cavity formed by wet and dry etching in the prior art;
FIG. 1b is a schematic diagram of a prior art method of spin coating a photoresist on a silicon substrate embedded with a chip;
FIG. 1c is a schematic diagram of bubble emergence after baking photoresist in the prior art;
FIG. 1d is a schematic diagram of the effect of residual photoresist bubbles on the wiring in the prior art;
FIG. 2 is a flow chart of spin-coating and vacuum processing techniques for high viscosity photoresist;
FIG. 3 is a flow chart of spin-coating and vacuum processing techniques for low viscosity photoresist;
FIG. 4 is a schematic diagram of a spin coater apparatus with a vacuum environment according to the present invention;
FIGS. 5 and 6 are schematic diagrams of a spin coater according to an embodiment;
in the figure: the device comprises a machine body of the spin coater 1, a cavity of the spin coater 2, a control panel of a display touch screen 3, a vacuum pressure regulating valve of a carrying disc 4, a high-precision servo motor 5, a vacuum adsorption carrying disc 6, a sample to be processed 7, a carrying clamp 8, a glass cover plate 9, a vacuum pressure release valve 10, a cavity vacuumizing interface 11, a first pressure gauge pressure regulating valve 12, a first vacuum pump 13, a second vacuum pump 14, a second pressure gauge pressure regulating valve 15, a 16 support, a 17 dispensing propulsion device 18 hand crank handles, a 19 dispensing tube and a 20 dispensing valve.
Detailed Description
Example 1
The embodiment relates to a vacuum treatment method for glue homogenizing bubbles of a buried chip packaging substrate, which comprises the following steps:
step 1) as shown in fig. 2a, a silicon substrate with 207 mu m, 110 mu m and 80 mu m groove cavities with different depths is adopted, and a chip with corresponding thickness is embedded in the groove by using conductive silver adhesive. The recess cavity is preferably prepared by dry etching, and the dry etching is only vertical etching without transverse underetching, so that the geometric figure which is completely consistent with the etching resist can be accurately etched on the etched silicon substrate.
The inner wall surface of the groove and the surface of the silicon substrate are both electroplated with metallic copper, a gap of about 10 mu m exists between the groove and the chip, the depth-to-width ratio of the gap can reach 21 at most, and gas in the gap is difficult to escape from the gap.
Step 2) as shown in FIG. 2b, a viscous SU-82025 photoresist is poured onto the silicon substrate, the kinematic viscosity of the photoresist is 4500cSt, and part of the gas is trapped in the gap of the groove due to the narrow and large depth of the groove between the embedded chip and the silicon substrate.
As shown in fig. 4, a spin coater apparatus according to the present embodiment includes: the spin coater machine comprises a spin coater machine body 1, a spin coater machine cavity 2 arranged in the spin coater machine body, a high-precision servo motor 5 and a load disc vacuum pressure regulating valve 4 for regulating the adsorption pressure of a vacuum adsorption load disc 6, wherein: the spin coater cavity 2 is internally provided with a vacuum adsorption carrying disc 6 for carrying a sample 7 to be processed, the vacuum adsorption carrying disc 6 is respectively connected with a carrying disc vacuum pressure regulating valve 4 and a high-precision servo motor 5, and the spin coater cavity 2 is provided with a cavity vacuumizing interface 11, a cover plate 9 and a rubber dropping tube 19 which is opposite to the vacuum adsorption carrying disc 6.
The cover plate 9 is provided with a vacuum relief valve 10, a cavity vacuumizing interface 11 and a glue dripping port, the cavity vacuumizing interface 11 is connected with a first vacuum pump 13 through a first pressure gauge pressure regulating valve 12, gas in the cavity is extracted, the vacuum relief valve 10 is used for balancing the atmospheric pressure inside and outside the cavity, and the glue dripping port is connected with a glue dripping pipe 19.
The spin coater body 1 is further provided with a display touch screen control panel 3, the display touch screen control panel 3 is a 7-inch full-color touch screen, and is connected with a high-precision servo motor 5 and a vacuum adsorption carrying disc 6 in the spin coater, and is used for setting spin coating speed, spin coating time, acceleration and other information control motors 5 and controlling the adsorption vacuum state of the vacuum adsorption carrying disc 6.
The sample 7 to be treated is preferably fixed on the vacuum adsorption carrying disc 6 by the carrying clamp 8, and the sample falling off during spin coating caused by insufficient adsorption force of the vacuum adsorption carrying disc 6 is avoided when the vacuum environment is in the spin coater cavity 2.
The spin coater body 1 is further provided with a vacuum relief valve 10.
The cavity vacuumizing interface 11 is preferably connected with a first vacuum pump 13.
The load tray vacuum pressure regulating valve 4 is preferably connected to a second vacuum pump 14.
The glue dropping pipe 19 is arranged on the cavity 2 of the glue homogenizing machine through the support 16, the glue dropping pushing device 17 and the hand handle 18 and is opposite to the sample 7 to be treated, the glue in the glue dropping pipe 19 is dropped into the cavity through the glass cover plate 9 by pushing the glue dropping pushing device 17 through rotating the hand handle 18, and the glue dropping pipe 19 is provided with the glue dropping valve 20 to lock the glue in the glue dropping pipe 19.
The glue dropping pipe 19 is preferably further provided with a glue dropping valve 20.
The maximum rotating speed of the high-precision servo motor 5 is 10000rpm, the maximum acceleration is 50000rpm/s, and the rotating speed precision is +/-1 rpm.
And 3) as shown in fig. 2c, placing the silicon substrate subjected to spin coating photoresist on a vacuum adsorption carrying disc 6 in a photoresist homogenizing machine device, opening a second vacuum pump 14 to enable the carrying disc 6 to adsorb the silicon substrate, then covering a glass cover plate 9, closing a vacuum pressure release valve 10 and a photoresist dropping valve 20, connecting the first vacuum pump 13 with a cavity vacuumizing interface 11, opening the first vacuum pump 13 to vacuumize, standing for 2min after a pressure gauge displays-0.095 MPa, at the moment, floating air remained in a packaging gap to the surface of a photoresist solution as shown in fig. 2d, closing the first vacuum pump 13, opening a small amount of vacuum pressure release valve 10 to enable the internal pressure and the external pressure of the cavity to be gradually balanced, then opening the glass cover plate 9, adjusting the carrying disc vacuum pressure regulating valve 4 to enable the carrying disc 6 to have no adsorption force, and taking out the silicon substrate.
Step 4) as shown in fig. 2e, a dropper is used to suck bubbles floating on the surface of the photoresist solution, so that no gas remains in the gap under the solution, and the surface of the solution is flat.
Step 5) as shown in fig. 2f, the silicon substrate is placed back on the vacuum adsorption carrying disc 6, the vacuum pressure regulating valve 4 is regulated to enable the carrying disc 6 to adsorb the silicon substrate, and the spin coating and glue homogenizing process can be performed under normal pressure by covering the glass cover plate 9. And taking out after the glue homogenizing is finished, placing the glue on a hot plate for baking, and enabling the glue solution to be smooth in surface and free of bubbles.
Through specific practical experiments, placing the embedded chip packaging silicon substrate with the high-viscosity photoresist dripped in a vacuum photoresist homogenizing machine, standing for 2min under negative pressure of-0.095 MPa, taking out the substrate, treating bubbles in the groove gaps by using a dropper in normal pressure environment, placing the substrate back into the photoresist homogenizing machine shown in fig. 5 and 6 for normal pressure photoresist homogenizing, and baking the surface of the substrate to be smooth without generating bubbles after photoresist homogenizing.
Compared with the prior art, the embodiment solves the problem of bubbles generated by the high-viscosity photoresist uniformity of the embedded chip packaging substrate, ensures that the photoresist on the surface of the silicon substrate is smooth, has no situation of morphology damage caused by bubbles, is beneficial to subsequent processes such as metallization wiring on the surface of the glue solution, and improves the packaging success rate and performance.
Example 2
Step 1) as shown in fig. 3a, the preparation of the silicon substrate and the assembly work with the embedded chip are completed as in fig. 2 a.
Step 2) as shown in fig. 3b, placing the silicon substrate on a vacuum adsorption carrying disc 6 in a spin coater, opening a second vacuum pump 14, enabling the carrying disc 6 to adsorb the silicon substrate, fixing the silicon substrate on the carrying disc 6 by using a carrying clamp 8, covering a glass cover plate 9, closing a vacuum pressure release valve 10 and a glue dropping valve 20, connecting a first vacuum pump 13 and a cavity vacuumizing interface 11, opening the first vacuum pump 13 to vacuumize, and displaying-0.09 MPa by a pressure gauge.
The specific parameters of the vacuumizing are as follows: pumping to-0.09 MPa takes about 30s.
Step 3) as shown in fig. 3c, after the vacuum is pumped in the photoresist leveler, the photoresist dropping valve 20 is opened, the hand-operated handle 18 is rotated to drop the low-viscosity photoresist benzocyclobutene (BCB) from the photoresist dropping guide pipe 19 onto the silicon substrate in the vacuum photoresist leveler by pushing the photoresist dropping pushing device 17, the photoresist dropping valve 20 is closed, the kinematic viscosity of the photoresist is 400cSt, and the photoresist solution cannot fill the gap between the embedded chip and the silicon substrate groove.
The glue dropping mouth of the glue dropping guide pipe 19 is connected with the glue pushing device 17, and the hand handle 18 is rotated to push the needle tube to drop the low-viscosity photoresist onto the silicon substrate in the inner cavity of the spin coater through the glue dropping guide pipe 19.
Step 4) as shown in fig. 3d, the glue dripping valve 20 is closed, the vacuum environment in the glue homogenizing machine is kept, the glue homogenizing machine is controlled to homogenize the photoresist by controlling the display touch screen control panel 3, spin coating glue homogenizing operation is carried out on the photoresist, and the vacuum is kept stand for 2min after the glue homogenizing is completed.
Step 5) as shown in fig. 3e, the first vacuum pump 13 is closed, a small amount of vacuum relief valve 10 is opened to gradually balance the internal and external pressure of the cavity, then the glass cover plate 9 is opened, the second vacuum pump 13 is closed to make the carrying disc 6 have no adsorption force, the silicon substrate is taken out from the spin coater, the glue solution is extruded into the gap between the chip and the silicon substrate groove by the pressure difference under normal pressure environment, and the concave and undulating appearance is formed on the surface of the glue solution.
Step 6) as shown in fig. 3f, the silicon substrate is placed on a hot plate for baking, the glue solution is heated to recover the liquid state characteristics, the photoresist self-leveling layer enables the surface concave fluctuation to disappear, and no bubbles appear to damage the surface flatness.
Through specific practical experiments, a silicon substrate embedded with a chip is placed in a vacuum photoresist homogenizing machine as shown in fig. 5 and 6, low-viscosity photoresist is dripped in a vacuum environment of-0.09 MPa, the photoresist is homogenized in the vacuum environment and then is left stand for 2min, the concave and fluctuant appearance of the surface of the photoresist solution caused by pressure difference of the silicon substrate in a normal pressure environment is taken out, and the photoresist is baked to restore to be smooth, so that the photoresist on the surface of the substrate is smooth, and no bubble remains in the substrate.
Compared with the prior art, the embodiment solves the problem of bubbles generated by the low-viscosity photoresist uniformity of the embedded chip packaging substrate, so that the photoresist on the surface of the silicon substrate is smooth, the subsequent processes such as metallization wiring and the like on the surface of the glue solution are facilitated, and the packaging success rate and performance are improved.
The foregoing embodiments may be partially modified in numerous ways by those skilled in the art without departing from the principles and spirit of the invention, the scope of which is defined in the claims and not by the foregoing embodiments, and all such implementations are within the scope of the invention.
Claims (3)
1. A vacuum treatment method for glue homogenizing bubbles of an embedded chip packaging substrate is characterized in that a glue homogenizing machine device with a vacuum environment is adopted, photoresist is spin-coated before spin-coating or under the vacuum environment, and bubble-removing vacuum treatment is carried out, so that air reserved in gaps between a packaging chip and a groove is removed, the glue solution after glue homogenizing has a flat surface, and no bubble remains in the glue solution;
the de-bubbling vacuum treatment specifically comprises the following steps: when the photoresist with the kinematic viscosity range of 2000-45000 cSt is adopted, bubble removal treatment is carried out before spin coating the photoresist; when photoresist with the kinematic viscosity range of 0-400 cSt is adopted, spin-coating the photoresist in a vacuum environment and removing bubbles;
the spin coater device with vacuum environment comprises: even machine organism and set up in its inside even machine cavity, high accuracy servo motor and be used for adjusting vacuum adsorption to carry thing dish adsorption pressure's year thing dish vacuum air-vent valve of thing dish, wherein: the vacuum adsorption material carrying disc for carrying the sample to be treated is arranged in the cavity of the spin coater, and is respectively connected with a vacuum pressure regulating valve of the material carrying disc and a high-precision servo motor, and the cavity of the spin coater is provided with a cavity vacuumizing interface, a cover plate and a rubber dropping tube opposite to the vacuum adsorption material carrying disc;
the bubble removal treatment is carried out before spin coating the photoresist, and specifically comprises the following steps: pouring a proper amount of photoresist on a silicon substrate, placing the silicon substrate on a vacuum adsorption carrying disc, opening a second vacuum pump to enable the carrying disc to adsorb the silicon substrate, then covering a glass cover plate, closing a vacuum relief valve and a glue dripping valve, connecting the first vacuum pump with a cavity vacuumizing interface, opening the first vacuum pump to vacuumize, standing for 2min after a pressure gauge displays-0.095 MPa, at the moment, floating air remained in a packaging gap to the surface of glue solution, closing the first vacuum pump, opening a small amount of vacuum relief valve to enable the internal pressure and the external pressure of the cavity to be gradually balanced, then opening the glass cover plate, adjusting the vacuum relief valve of the carrying disc to enable the carrying disc to have no adsorption force, taking out the silicon substrate, cleaning bubbles near the surface of the glue solution by using a dropper, then placing the carrying disc again, adjusting the vacuum relief valve to enable the carrying disc to adsorb the silicon substrate, and performing spin coating glue homogenizing process under normal pressure after covering the glass cover plate;
the photoresist is spin-coated and bubble-removed in a vacuum environment, and the method specifically comprises the following steps: placing a silicon substrate on a vacuum adsorption carrying disc in a spin coater, opening a second vacuum pump to enable the carrying disc to adsorb the silicon substrate, fixing the silicon substrate on the carrying disc by using a carrying clamp, then covering a glass cover plate, closing a vacuum relief valve and a glue dropping valve, connecting a first vacuum pump with a cavity vacuumizing interface, opening the first vacuum pump to vacuumize, and displaying-0.09 MPa by a pressure gauge, wherein a gap between a chip and a silicon substrate groove is also in a vacuum state; opening a glue dripping valve, rotating a hand handle to drip photoresist from a glue dripping guide pipe onto a silicon substrate in a vacuum glue homogenizing machine by pushing a glue dispensing pushing device, closing the glue dripping valve, controlling the glue homogenizing machine to uniformly glue by controlling a display touch screen control panel, standing for 2min after the glue homogenizing is finished, closing a first vacuum pump, opening a small vacuum relief valve to gradually balance the internal and external pressure of a cavity, then opening a glass cover plate, extruding the photoresist into a gap between a chip and a silicon substrate groove by pressure difference under normal pressure environment, forming a concave undulating shape on the surface of the photoresist, closing a second vacuum pump to ensure that an adsorption force does not exist on a carrying disc, taking out the silicon substrate, placing the silicon substrate on a hot plate, and baking the photoresist solution to be self-leveling;
the cover plate is provided with a vacuum relief valve, a cavity vacuumizing interface and a glue dripping port, the cavity vacuumizing interface is connected with a first vacuum pump through a first pressure gauge pressure regulating valve, gas in the cavity is extracted, the vacuum relief valve is used for balancing the atmospheric pressure inside and outside the cavity, and the glue dripping port is connected with a glue dripping pipe;
the glue dripping pipe is arranged on the cavity of the glue homogenizing machine and is opposite to the sample to be treated through the support, the glue dripping propelling device and the hand crank, the glue dripping propelling device is pushed by the hand crank to drip the glue in the glue dripping pipe into the cavity through the glass cover plate, and the glue dripping valve is arranged on the glue dripping pipe to lock the glue in the glue dripping pipe.
2. The method for vacuum processing of glue homogenizing bubbles of a buried chip packaging substrate according to claim 1, wherein the buried chip packaging mode adopts a silicon substrate with a groove cavity for packaging, and a small chip to be packaged is placed in the groove.
3. The vacuum processing method of the glue homogenizing bubbles of the embedded chip packaging substrate according to claim 2, wherein the inner wall surface of the groove and the surface of the silicon substrate are both electroplated with metal, and the groove cavity is prepared by dry etching.
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| CN102641823B (en) * | 2012-05-14 | 2015-10-28 | 中国科学院微电子研究所 | A kind of even adhesive dispenser of microwave and even gluing method |
| CN203155488U (en) * | 2013-02-07 | 2013-08-28 | 华南理工大学 | Full-automatic fluorescent powder coating equipment |
| CN105057163A (en) * | 2015-07-15 | 2015-11-18 | 中国科学院长春光学精密机械与物理研究所 | Spin coating device and method utilizing airflow for controlling thickness of photoresist film |
| CN105137714B (en) * | 2015-10-10 | 2019-08-13 | 兰红波 | A kind of device and its method for stamping of large scale wafer full wafer nano impression |
| US10167190B2 (en) * | 2016-02-16 | 2019-01-01 | The Regents Of The University Of California | Low cost wafer level process for packaging MEMS three dimensional devices |
| CN108838026B (en) * | 2018-09-19 | 2023-08-15 | 河北科技大学 | Ring glue filling solidifying device and glue filling process method |
| CN210675762U (en) * | 2019-06-13 | 2020-06-05 | 厦门通富微电子有限公司 | Bubble removing device and spin coater |
| CN210666331U (en) * | 2019-08-16 | 2020-06-02 | 甘肃华隆芯材料科技有限公司 | Spin coating instrument for spin-coating photoresist |
| CN215465759U (en) * | 2021-06-11 | 2022-01-11 | 福州大学 | Coating and spin-coating machine of photoetching machine |
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