DE112012005843T8 - Verfahren zur Herstellung einer Metalloxidschicht und Metalloxidschicht - Google Patents

Verfahren zur Herstellung einer Metalloxidschicht und Metalloxidschicht Download PDF

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Publication number
DE112012005843T8
DE112012005843T8 DE112012005843.7T DE112012005843T DE112012005843T8 DE 112012005843 T8 DE112012005843 T8 DE 112012005843T8 DE 112012005843 T DE112012005843 T DE 112012005843T DE 112012005843 T8 DE112012005843 T8 DE 112012005843T8
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Germany
Prior art keywords
metal oxide
oxide layer
producing
layer
metal
Prior art date
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Application number
DE112012005843.7T
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DE112012005843T5 (de
Inventor
c/o TOSHIBA MITSUBISHI-ELECTRI Shirahata Takahiro
c/o TOSHIBA MITSUBISHI-ELECTRI Orita Hiroyuki
c/o TOSHIBA MITSUBISHI-ELECTRI Hiramatsu Takahiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Mitsubishi Electric Industrial Systems Corp
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Toshiba Mitsubishi Electric Industrial Systems Corp
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Filing date
Publication date
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Publication of DE112012005843T5 publication Critical patent/DE112012005843T5/de
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/003Apparatus or processes specially adapted for manufacturing conductors or cables using irradiation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00Compounds of zinc
    • C01G9/02Oxides; Hydroxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208Oxides, e.g. ceramics
    • C23C18/1216Metal oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143Radiation by light, e.g. photolysis or pyrolysis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0016Apparatus or processes specially adapted for manufacturing conductors or cables for heat treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • General Health & Medical Sciences (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Manufacturing Of Electric Cables (AREA)
DE112012005843.7T 2012-02-08 2012-10-24 Verfahren zur Herstellung einer Metalloxidschicht und Metalloxidschicht Active DE112012005843T8 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPPCT/JP2012/052835 2012-02-08
JP2012052835 2012-02-08
JP2012-052835 2012-03-09
PCT/JP2012/077416 WO2013118353A1 (ja) 2012-02-08 2012-10-24 金属酸化膜の製造方法および金属酸化膜

Publications (2)

Publication Number Publication Date
DE112012005843T5 DE112012005843T5 (de) 2014-10-30
DE112012005843T8 true DE112012005843T8 (de) 2015-02-05

Family

ID=48947140

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112012005843.7T Active DE112012005843T8 (de) 2012-02-08 2012-10-24 Verfahren zur Herstellung einer Metalloxidschicht und Metalloxidschicht

Country Status (7)

Country Link
US (1) US20150010464A1 (de)
KR (4) KR20140101854A (de)
CN (1) CN104105817B (de)
DE (1) DE112012005843T8 (de)
HK (1) HK1198183A1 (de)
TW (1) TWI552204B (de)
WO (1) WO2013118353A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10290762B2 (en) 2015-06-18 2019-05-14 Toshiba Mitsubishi-Electric Industrial Systems Corporation Metal oxide film formation method
DE102017006277A1 (de) 2016-07-04 2018-01-04 Mando Corporation Stromversorgungsvorrichtung für einen feldwicklungsmotor sowie feldwicklungsmotor, der diese enthält
KR102527442B1 (ko) 2018-08-01 2023-04-28 가부시키가이샤 니콘 미스트 발생 장치, 그리고 미스트 성막 방법, 및 미스트 성막 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0945140A (ja) 1995-07-28 1997-02-14 Sumitomo Metal Mining Co Ltd 酸化亜鉛系透明導電性膜
JP4110752B2 (ja) * 2001-06-28 2008-07-02 富士ゼロックス株式会社 基材上に設けた透明導電膜を低抵抗化する方法。
JP2005029408A (ja) * 2003-07-09 2005-02-03 Nippon Shokubai Co Ltd 金属酸化物膜の形成方法
US7253125B1 (en) * 2004-04-16 2007-08-07 Novellus Systems, Inc. Method to improve mechanical strength of low-k dielectric film using modulated UV exposure
JP4705340B2 (ja) * 2004-06-14 2011-06-22 日本曹達株式会社 酸化インジウム膜の製造方法
KR101333379B1 (ko) * 2008-09-24 2013-11-28 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 산화 아연막(ZnO) 또는 산화 마그네슘아연막(ZnMgO)의 성막 방법 및 산화 아연막 또는 산화 마그네슘아연막의 성막 장치
DE112008004012T5 (de) * 2008-09-24 2011-09-29 Toshiba Mitsubishi-Electric Industrial Systems Corporation Verfahren zur Erzeugung eines Metalloxidfilmes und Anlage zur Erzeugung eines Metalloxidfilmes
JP5674186B2 (ja) * 2010-02-16 2015-02-25 国立大学法人 宮崎大学 酸化亜鉛薄膜製造方法、およびこの方法で製造した帯電防止薄膜、紫外線カット薄膜、透明電極薄膜
JP5411681B2 (ja) 2009-12-09 2014-02-12 スタンレー電気株式会社 酸化亜鉛系半導体の成長方法及び半導体発光素子の製造方法

Also Published As

Publication number Publication date
KR20140101854A (ko) 2014-08-20
CN104105817A (zh) 2014-10-15
HK1198183A1 (zh) 2015-03-13
US20150010464A1 (en) 2015-01-08
KR20180058856A (ko) 2018-06-01
TWI552204B (zh) 2016-10-01
DE112012005843T5 (de) 2014-10-30
WO2013118353A1 (ja) 2013-08-15
KR20160098523A (ko) 2016-08-18
TW201340179A (zh) 2013-10-01
KR20160075761A (ko) 2016-06-29
CN104105817B (zh) 2016-02-24

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