DE112010005100B4 - Einkristall-Herstellungsvorrichtung - Google Patents

Einkristall-Herstellungsvorrichtung Download PDF

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Publication number
DE112010005100B4
DE112010005100B4 DE112010005100.3T DE112010005100T DE112010005100B4 DE 112010005100 B4 DE112010005100 B4 DE 112010005100B4 DE 112010005100 T DE112010005100 T DE 112010005100T DE 112010005100 B4 DE112010005100 B4 DE 112010005100B4
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DE
Germany
Prior art keywords
heater
single crystal
thermal insulation
insulation board
cylindrical
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Active
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DE112010005100.3T
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German (de)
English (en)
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DE112010005100T5 (de
Inventor
Toshiro Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE112010005100T5 publication Critical patent/DE112010005100T5/de
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112010005100.3T 2010-01-08 2010-12-03 Einkristall-Herstellungsvorrichtung Active DE112010005100B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010002449A JP5293615B2 (ja) 2010-01-08 2010-01-08 単結晶製造装置
JP2010-002449 2010-01-08
PCT/JP2010/007044 WO2011083529A1 (ja) 2010-01-08 2010-12-03 単結晶製造装置

Publications (2)

Publication Number Publication Date
DE112010005100T5 DE112010005100T5 (de) 2012-12-13
DE112010005100B4 true DE112010005100B4 (de) 2020-02-13

Family

ID=44305276

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112010005100.3T Active DE112010005100B4 (de) 2010-01-08 2010-12-03 Einkristall-Herstellungsvorrichtung

Country Status (6)

Country Link
US (1) US9187844B2 (https=)
JP (1) JP5293615B2 (https=)
KR (1) KR101685478B1 (https=)
CN (1) CN102630256B (https=)
DE (1) DE112010005100B4 (https=)
WO (1) WO2011083529A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2589687A1 (en) 2011-11-04 2013-05-08 Vesuvius France (S.A.) Crucible and method for the production of a (near ) monocrystalline semiconductor ingot
EP2604728A1 (en) 2011-12-12 2013-06-19 Vesuvius France S.A. Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same
JP5660019B2 (ja) * 2011-12-13 2015-01-28 信越半導体株式会社 単結晶引上げ装置
KR101658284B1 (ko) * 2014-08-05 2016-09-20 주식회사 엘지실트론 잉곳성장장치
KR102017080B1 (ko) * 2017-12-05 2019-09-02 웅진에너지 주식회사 잉곳 성장장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5766346A (en) * 1995-12-28 1998-06-16 Shin-Etsu Handotai Co., Ltd. Apparatus for producing silicon single crystal
JPH10167876A (ja) * 1996-11-29 1998-06-23 Super Silicon Kenkyusho:Kk Ｃｚ結晶製造装置
JP2000001394A (ja) * 1998-06-12 2000-01-07 Mitsubishi Materials Silicon Corp シリコン単結晶の引上げ装置及びその引上げ方法
DE69706589T2 (de) * 1996-03-27 2002-07-11 Shin-Etsu Handotai Co., Ltd. Vorrichtung zur Herstellung Silizium-Einkristallen

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2630461B1 (fr) 1988-04-20 1990-08-31 Inst Textile De France Procede et dispositif d'alimentation automatique d'une machine a coudre
JP3482979B2 (ja) * 1996-04-09 2004-01-06 三菱住友シリコン株式会社 単結晶引上装置におけるヒーター電極溶損防止装置
JP2002137997A (ja) * 2000-10-31 2002-05-14 Super Silicon Kenkyusho:Kk 単結晶引き上げ装置
JP2009274925A (ja) * 2008-05-16 2009-11-26 Sumco Corp 単結晶引上げ装置およびこれを用いた単結晶の引上げ方法
CN101581542B (zh) * 2009-06-16 2012-06-13 重庆大全新能源有限公司 多晶硅还原炉高压启动绝缘电极

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5766346A (en) * 1995-12-28 1998-06-16 Shin-Etsu Handotai Co., Ltd. Apparatus for producing silicon single crystal
DE69706589T2 (de) * 1996-03-27 2002-07-11 Shin-Etsu Handotai Co., Ltd. Vorrichtung zur Herstellung Silizium-Einkristallen
JPH10167876A (ja) * 1996-11-29 1998-06-23 Super Silicon Kenkyusho:Kk Ｃｚ結晶製造装置
JP2000001394A (ja) * 1998-06-12 2000-01-07 Mitsubishi Materials Silicon Corp シリコン単結晶の引上げ装置及びその引上げ方法

Also Published As

Publication number Publication date
WO2011083529A1 (ja) 2011-07-14
DE112010005100T5 (de) 2012-12-13
CN102630256A (zh) 2012-08-08
KR20120112505A (ko) 2012-10-11
JP2011140421A (ja) 2011-07-21
KR101685478B1 (ko) 2016-12-12
US20120204784A1 (en) 2012-08-16
JP5293615B2 (ja) 2013-09-18
CN102630256B (zh) 2015-12-02
US9187844B2 (en) 2015-11-17

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