DE112009002717T8 - Elektrodenschaltung, Schichterzeugungsvorrichtung, Elektrodeneinheit und Schichterzeugungsverfahren - Google Patents
Elektrodenschaltung, Schichterzeugungsvorrichtung, Elektrodeneinheit und Schichterzeugungsverfahren Download PDFInfo
- Publication number
- DE112009002717T8 DE112009002717T8 DE112009002717T DE112009002717T DE112009002717T8 DE 112009002717 T8 DE112009002717 T8 DE 112009002717T8 DE 112009002717 T DE112009002717 T DE 112009002717T DE 112009002717 T DE112009002717 T DE 112009002717T DE 112009002717 T8 DE112009002717 T8 DE 112009002717T8
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- Germany
- Prior art keywords
- film forming
- electrode
- forming apparatus
- forming method
- electrode unit
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
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- H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table including microcrystalline silicon, uc-Si
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-289590 | 2008-11-12 | ||
JP2008289590 | 2008-11-12 | ||
PCT/JP2009/006059 WO2010055669A1 (ja) | 2008-11-12 | 2009-11-12 | 電極回路、成膜装置、電極ユニットおよび成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE112009002717T5 DE112009002717T5 (de) | 2013-03-21 |
DE112009002717T8 true DE112009002717T8 (de) | 2013-06-13 |
Family
ID=42169814
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112009002717T Ceased DE112009002717T8 (de) | 2008-11-12 | 2009-11-12 | Elektrodenschaltung, Schichterzeugungsvorrichtung, Elektrodeneinheit und Schichterzeugungsverfahren |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110300694A1 (de) |
JP (1) | JPWO2010055669A1 (de) |
KR (1) | KR20110084512A (de) |
CN (1) | CN102203317A (de) |
DE (1) | DE112009002717T8 (de) |
TW (1) | TW201026888A (de) |
WO (1) | WO2010055669A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2293343A4 (de) * | 2008-06-06 | 2012-05-02 | Ulvac Inc | Vorrichtung zur herstellung einer dünnfilmsolarzelle |
JP5853291B2 (ja) * | 2011-12-01 | 2016-02-09 | 東海高熱工業株式会社 | 基板処理装置、及び、搬送装置 |
DE102014204159B3 (de) * | 2014-03-06 | 2015-06-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hochfrequenzelektrodenvorrichtung |
KR102137512B1 (ko) * | 2014-12-11 | 2020-07-27 | 에바텍 아크티엔게젤샤프트 | 기판 탈가스용 챔버 |
CN110800379B (zh) | 2017-06-27 | 2022-01-18 | 佳能安内华股份有限公司 | 等离子体处理装置 |
PL3648552T3 (pl) | 2017-06-27 | 2022-06-13 | Canon Anelva Corporation | Urządzenie do obróbki plazmowej |
PL3648551T3 (pl) | 2017-06-27 | 2021-12-06 | Canon Anelva Corporation | Urządzenie do obróbki plazmowej |
KR20220031132A (ko) | 2017-06-27 | 2022-03-11 | 캐논 아네르바 가부시키가이샤 | 플라스마 처리 장치 |
WO2020003557A1 (ja) | 2018-06-26 | 2020-01-02 | キヤノンアネルバ株式会社 | プラズマ処理装置、プラズマ処理方法、プログラムおよびメモリ媒体 |
KR102157748B1 (ko) * | 2018-06-29 | 2020-09-18 | 한국알박(주) | 진공 성막 장치 |
KR102157725B1 (ko) * | 2018-06-29 | 2020-09-18 | 한국알박(주) | 진공 성막 장치 |
KR102137904B1 (ko) | 2019-04-03 | 2020-07-24 | 고재웅 | 스냅링 자동 결합장치 및 그 스냅링 결합툴 |
FR3104174B1 (fr) * | 2019-12-06 | 2022-04-01 | Commissariat Energie Atomique | Nacelle pour dispositif de depot chimique en phase vapeur assiste par plasma a nettoyage facilite |
FR3104175B1 (fr) * | 2019-12-06 | 2022-07-22 | Commissariat Energie Atomique | Nacelle pour dispositif de depot chimique en phase vapeur assiste par plasma |
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US4825806A (en) * | 1984-02-17 | 1989-05-02 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Film forming apparatus |
JPH0644554B2 (ja) * | 1984-03-28 | 1994-06-08 | 株式会社富士電機総合研究所 | プラズマcvd装置 |
US4664890A (en) * | 1984-06-22 | 1987-05-12 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Glow-discharge decomposition apparatus |
JPH0719750B2 (ja) * | 1984-06-22 | 1995-03-06 | 鐘淵化学工業株式会社 | グロ−放電型成膜装置 |
JPH0327120U (de) * | 1989-07-26 | 1991-03-19 | ||
DE4428136A1 (de) * | 1994-08-09 | 1996-02-15 | Leybold Ag | Vakuum-Beschichtungsanlage |
JPH08172054A (ja) * | 1994-12-19 | 1996-07-02 | Mitsubishi Electric Corp | プラズマcvd方法、その装置およびそれを用いた半導体装置の製法 |
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JP2005158980A (ja) * | 2003-11-26 | 2005-06-16 | Kaneka Corp | Cvd装置 |
JP2006196681A (ja) * | 2005-01-13 | 2006-07-27 | Sharp Corp | プラズマ処理装置および同装置により製造された半導体素子 |
EP1917842B1 (de) * | 2005-08-26 | 2015-03-11 | FUJIFILM Manufacturing Europe B.V. | Verfahren und anordnung zum erzeugen und steuern eines entladungsplasmas |
JP5135720B2 (ja) * | 2006-06-09 | 2013-02-06 | 富士電機株式会社 | プラズマ処理装置 |
JP2008289590A (ja) | 2007-05-23 | 2008-12-04 | Olympia:Kk | 遊技機、プログラムおよび情報記憶媒体 |
-
2009
- 2009-11-12 WO PCT/JP2009/006059 patent/WO2010055669A1/ja active Application Filing
- 2009-11-12 TW TW098138474A patent/TW201026888A/zh unknown
- 2009-11-12 KR KR1020117010339A patent/KR20110084512A/ko not_active Application Discontinuation
- 2009-11-12 US US13/128,430 patent/US20110300694A1/en not_active Abandoned
- 2009-11-12 DE DE112009002717T patent/DE112009002717T8/de not_active Ceased
- 2009-11-12 JP JP2010537702A patent/JPWO2010055669A1/ja active Pending
- 2009-11-12 CN CN2009801438082A patent/CN102203317A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JPWO2010055669A1 (ja) | 2012-04-12 |
DE112009002717T5 (de) | 2013-03-21 |
WO2010055669A1 (ja) | 2010-05-20 |
CN102203317A (zh) | 2011-09-28 |
KR20110084512A (ko) | 2011-07-25 |
TW201026888A (en) | 2010-07-16 |
US20110300694A1 (en) | 2011-12-08 |
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