DE112008001201T5 - Verfahren zum Wachsenlassen eines Silizium-Einkristalls - Google Patents

Verfahren zum Wachsenlassen eines Silizium-Einkristalls Download PDF

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Publication number
DE112008001201T5
DE112008001201T5 DE112008001201T DE112008001201T DE112008001201T5 DE 112008001201 T5 DE112008001201 T5 DE 112008001201T5 DE 112008001201 T DE112008001201 T DE 112008001201T DE 112008001201 T DE112008001201 T DE 112008001201T DE 112008001201 T5 DE112008001201 T5 DE 112008001201T5
Authority
DE
Germany
Prior art keywords
carbon
single crystal
silicon single
crucible
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112008001201T
Other languages
German (de)
English (en)
Inventor
Ryoji Hoshi
Susumu Sonokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE112008001201T5 publication Critical patent/DE112008001201T5/de
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112008001201T 2007-05-30 2008-04-18 Verfahren zum Wachsenlassen eines Silizium-Einkristalls Ceased DE112008001201T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007-142988 2007-05-30
JP2007142988A JP5061728B2 (ja) 2007-05-30 2007-05-30 シリコン単結晶の育成方法
PCT/JP2008/001029 WO2008146443A1 (ja) 2007-05-30 2008-04-18 シリコン単結晶の育成方法

Publications (1)

Publication Number Publication Date
DE112008001201T5 true DE112008001201T5 (de) 2010-08-05

Family

ID=40074721

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112008001201T Ceased DE112008001201T5 (de) 2007-05-30 2008-04-18 Verfahren zum Wachsenlassen eines Silizium-Einkristalls

Country Status (5)

Country Link
US (1) US20100116195A1 (https=)
JP (1) JP5061728B2 (https=)
KR (1) KR101465425B1 (https=)
DE (1) DE112008001201T5 (https=)
WO (1) WO2008146443A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5510359B2 (ja) * 2011-02-21 2014-06-04 信越半導体株式会社 炭素ドープシリコン単結晶の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11302099A (ja) 1998-04-21 1999-11-02 Sumitomo Metal Ind Ltd シリコン単結晶の製造方法
JPH11312683A (ja) 1998-04-28 1999-11-09 Sumitomo Metal Ind Ltd 半導体単結晶シリコンの製造方法
JP2002293691A (ja) 2001-03-30 2002-10-09 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶並びにシリコンウエーハ
JP2003146796A (ja) 2001-10-30 2003-05-21 Hynix Semiconductor Inc 半導体ウェーハの製造方法
JP2005320203A (ja) 2004-05-10 2005-11-17 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3980854A (en) * 1974-11-15 1976-09-14 Rca Corporation Graphite susceptor structure for inductively heating semiconductor wafers
JPS58151392A (ja) * 1982-02-26 1983-09-08 Sumitomo Metal Mining Co Ltd かさ比重の大きい酸化物単結晶引上げ用原料の調整方法
JPS6033210A (ja) * 1983-08-02 1985-02-20 Komatsu Denshi Kinzoku Kk 半導体用シリコンの破砕方法
DE4106589C2 (de) * 1991-03-01 1997-04-24 Wacker Siltronic Halbleitermat Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski
TW429273B (en) * 1996-02-08 2001-04-11 Shinetsu Handotai Kk Method for feeding garnular silicon material, feed pipe used in the method, and method of manufacturing a silicon monocrystal
DE69701126T2 (de) * 1996-07-30 2000-06-21 Sony Corp., Tokio/Tokyo Sekundärbatterie mit nichtwässrigem elektrolyten
JP4256576B2 (ja) * 2000-08-31 2009-04-22 信越半導体株式会社 半導体単結晶製造装置
CN1543518A (zh) * 2001-07-05 2004-11-03 Axt 以坚固支座、碳掺杂和电阻率控制及温度梯度控制来生长半导体晶体的方法和装置
DE10133635A1 (de) * 2001-07-11 2003-02-06 Sgl Carbon Ag Mehrschichtiger Keramik-Verbund
US20030101924A1 (en) * 2001-11-15 2003-06-05 Memc Electronic Materials, Inc. Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
US20090214954A1 (en) * 2004-08-30 2009-08-27 Mitsubishi Chemical Corporation Negative electrode material for nonaqueous secondary cells, negative electrode for nonaqueous secondary cells, and nonaqueous secondary cell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11302099A (ja) 1998-04-21 1999-11-02 Sumitomo Metal Ind Ltd シリコン単結晶の製造方法
JPH11312683A (ja) 1998-04-28 1999-11-09 Sumitomo Metal Ind Ltd 半導体単結晶シリコンの製造方法
JP2002293691A (ja) 2001-03-30 2002-10-09 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶並びにシリコンウエーハ
JP2003146796A (ja) 2001-10-30 2003-05-21 Hynix Semiconductor Inc 半導体ウェーハの製造方法
JP2005320203A (ja) 2004-05-10 2005-11-17 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶

Also Published As

Publication number Publication date
US20100116195A1 (en) 2010-05-13
KR20100017406A (ko) 2010-02-16
JP2008297139A (ja) 2008-12-11
WO2008146443A1 (ja) 2008-12-04
JP5061728B2 (ja) 2012-10-31
KR101465425B1 (ko) 2014-11-26

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R012 Request for examination validly filed
R012 Request for examination validly filed

Effective date: 20141219

R016 Response to examination communication
R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final