DE112006003494T5 - Verfahren und Vorrichtung zur Verarbeitung von mehrphotonen-aushärtbaren photoreaktiven Zusammensetzungen - Google Patents
Verfahren und Vorrichtung zur Verarbeitung von mehrphotonen-aushärtbaren photoreaktiven Zusammensetzungen Download PDFInfo
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- DE112006003494T5 DE112006003494T5 DE112006003494T DE112006003494T DE112006003494T5 DE 112006003494 T5 DE112006003494 T5 DE 112006003494T5 DE 112006003494 T DE112006003494 T DE 112006003494T DE 112006003494 T DE112006003494 T DE 112006003494T DE 112006003494 T5 DE112006003494 T5 DE 112006003494T5
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- KOARAHKGQSHYGJ-UHFFFAOYSA-N methyl 2-methylprop-2-enoate;oxiran-2-ylmethyl prop-2-enoate Chemical compound COC(=O)C(C)=C.C=CC(=O)OCC1CO1 KOARAHKGQSHYGJ-UHFFFAOYSA-N 0.000 description 1
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- BEPGHZIEOVULBU-UHFFFAOYSA-N n,n'-diethylpropane-1,3-diamine Chemical compound CCNCCCNCC BEPGHZIEOVULBU-UHFFFAOYSA-N 0.000 description 1
- KVKFRMCSXWQSNT-UHFFFAOYSA-N n,n'-dimethylethane-1,2-diamine Chemical compound CNCCNC KVKFRMCSXWQSNT-UHFFFAOYSA-N 0.000 description 1
- MDKQJOKKKZNQDG-UHFFFAOYSA-N n,n'-dimethylhexane-1,6-diamine Chemical compound CNCCCCCCNC MDKQJOKKKZNQDG-UHFFFAOYSA-N 0.000 description 1
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- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
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- AHKKZIUZTWZKDR-UHFFFAOYSA-N n-[bis(dimethylamino)-methylsilyl]-n-methylmethanamine Chemical compound CN(C)[Si](C)(N(C)C)N(C)C AHKKZIUZTWZKDR-UHFFFAOYSA-N 0.000 description 1
- VJDVRUZAQRISHN-UHFFFAOYSA-N n-[bis(dimethylamino)-phenylsilyl]-n-methylmethanamine Chemical compound CN(C)[Si](N(C)C)(N(C)C)C1=CC=CC=C1 VJDVRUZAQRISHN-UHFFFAOYSA-N 0.000 description 1
- FTURFVPIEOKJBC-UHFFFAOYSA-N n-[dimethylamino(diphenyl)silyl]-n-methylmethanamine Chemical compound C=1C=CC=CC=1[Si](N(C)C)(N(C)C)C1=CC=CC=C1 FTURFVPIEOKJBC-UHFFFAOYSA-N 0.000 description 1
- WAQPJHNWYPETBC-UHFFFAOYSA-N n-bis(dipropylamino)phosphoryl-n-propylpropan-1-amine Chemical compound CCCN(CCC)P(=O)(N(CCC)CCC)N(CCC)CCC WAQPJHNWYPETBC-UHFFFAOYSA-N 0.000 description 1
- KNLUHXUFCCNNIB-UHFFFAOYSA-N n-dimethylsilyl-n-methylmethanamine Chemical compound CN(C)[SiH](C)C KNLUHXUFCCNNIB-UHFFFAOYSA-N 0.000 description 1
- LMTGCJANOQOGPI-UHFFFAOYSA-N n-methyl-n-phenylacetamide Chemical compound CC(=O)N(C)C1=CC=CC=C1 LMTGCJANOQOGPI-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000000269 nucleophilic effect Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 235000019198 oils Nutrition 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- YPNZYYWORCABPU-UHFFFAOYSA-N oxiran-2-ylmethyl 2-methylprop-2-enoate;styrene Chemical compound C=CC1=CC=CC=C1.CC(=C)C(=O)OCC1CO1 YPNZYYWORCABPU-UHFFFAOYSA-N 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- 125000000466 oxiranyl group Chemical group 0.000 description 1
- BFYJDHRWCNNYJQ-UHFFFAOYSA-N oxo-(3-oxo-3-phenylpropoxy)-(2,4,6-trimethylphenyl)phosphanium Chemical compound CC1=CC(C)=CC(C)=C1[P+](=O)OCCC(=O)C1=CC=CC=C1 BFYJDHRWCNNYJQ-UHFFFAOYSA-N 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- FZUGPQWGEGAKET-UHFFFAOYSA-N parbenate Chemical compound CCOC(=O)C1=CC=C(N(C)C)C=C1 FZUGPQWGEGAKET-UHFFFAOYSA-N 0.000 description 1
- DPBLXKKOBLCELK-UHFFFAOYSA-N pentan-1-amine Chemical compound CCCCCN DPBLXKKOBLCELK-UHFFFAOYSA-N 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 150000008039 phosphoramides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920002285 poly(styrene-co-acrylonitrile) Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
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- QTECDUFMBMSHKR-UHFFFAOYSA-N prop-2-enyl prop-2-enoate Chemical compound C=CCOC(=O)C=C QTECDUFMBMSHKR-UHFFFAOYSA-N 0.000 description 1
- BOQSSGDQNWEFSX-UHFFFAOYSA-N propan-2-yl 2-methylprop-2-enoate Chemical compound CC(C)OC(=O)C(C)=C BOQSSGDQNWEFSX-UHFFFAOYSA-N 0.000 description 1
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- 229920006395 saturated elastomer Polymers 0.000 description 1
- 125000005373 siloxane group Chemical group [SiH2](O*)* 0.000 description 1
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- 235000012424 soybean oil Nutrition 0.000 description 1
- 239000003549 soybean oil Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000003455 sulfinic acids Chemical class 0.000 description 1
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 1
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- 125000004434 sulfur atom Chemical group 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
- GJWMYLFHBXEWNZ-UHFFFAOYSA-N tert-butyl (4-ethenylphenyl) carbonate Chemical compound CC(C)(C)OC(=O)OC1=CC=C(C=C)C=C1 GJWMYLFHBXEWNZ-UHFFFAOYSA-N 0.000 description 1
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
- XTXNWQHMMMPKKO-UHFFFAOYSA-N tert-butyl 2-phenylethenyl carbonate Chemical compound CC(C)(C)OC(=O)OC=CC1=CC=CC=C1 XTXNWQHMMMPKKO-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 150000005621 tetraalkylammonium salts Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- WLADIVUISABQHN-UHFFFAOYSA-N trimethyl(piperidin-1-yl)silane Chemical compound C[Si](C)(C)N1CCCCC1 WLADIVUISABQHN-UHFFFAOYSA-N 0.000 description 1
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- BPLUKJNHPBNVQL-UHFFFAOYSA-N triphenylarsine Chemical class C1=CC=CC=C1[As](C=1C=CC=CC=1)C1=CC=CC=C1 BPLUKJNHPBNVQL-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 235000015112 vegetable and seed oil Nutrition 0.000 description 1
- 239000008158 vegetable oil Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229920003176 water-insoluble polymer Polymers 0.000 description 1
- 239000012991 xanthate Substances 0.000 description 1
- RQNAPXJOFAMGPJ-UHFFFAOYSA-N xanthene Chemical compound C1=CC=C2[CH]C3=CC=CC=C3OC2=C1 RQNAPXJOFAMGPJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Laser Beam Processing (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75252905P | 2005-12-21 | 2005-12-21 | |
| US60/752,529 | 2005-12-21 | ||
| PCT/US2006/048498 WO2007073482A2 (en) | 2005-12-21 | 2006-12-20 | Method and apparatus for processing multiphoton curable photoreactive compositions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112006003494T5 true DE112006003494T5 (de) | 2008-10-30 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112006003494T Withdrawn DE112006003494T5 (de) | 2005-12-21 | 2006-12-20 | Verfahren und Vorrichtung zur Verarbeitung von mehrphotonen-aushärtbaren photoreaktiven Zusammensetzungen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7893410B2 (enExample) |
| JP (1) | JP4880701B2 (enExample) |
| CN (1) | CN101341578B (enExample) |
| DE (1) | DE112006003494T5 (enExample) |
| WO (1) | WO2007073482A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7583444B1 (en) | 2005-12-21 | 2009-09-01 | 3M Innovative Properties Company | Process for making microlens arrays and masterforms |
| CN101448632B (zh) | 2006-05-18 | 2012-12-12 | 3M创新有限公司 | 用于制备具有提取结构的光导的方法以及由此方法生产的光导 |
| JP2010537843A (ja) * | 2007-09-06 | 2010-12-09 | スリーエム イノベイティブ プロパティズ カンパニー | 微細構造物品を作製するための工具 |
| US9102083B2 (en) | 2007-09-06 | 2015-08-11 | 3M Innovative Properties Company | Methods of forming molds and methods of forming articles using said molds |
| KR20100080785A (ko) | 2007-09-06 | 2010-07-12 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 광 출력의 영역 제어를 제공하는 광 추출 구조물을 갖는 도광체 |
| WO2009048808A1 (en) * | 2007-10-11 | 2009-04-16 | 3M Innovative Properties Company | Chromatic confocal sensor |
| JP5524856B2 (ja) | 2007-12-12 | 2014-06-18 | スリーエム イノベイティブ プロパティズ カンパニー | エッジ明瞭性が向上した構造の製造方法 |
| JP5801558B2 (ja) * | 2008-02-26 | 2015-10-28 | スリーエム イノベイティブ プロパティズ カンパニー | 多光子露光システム |
| GB2489722B (en) | 2011-04-06 | 2017-01-18 | Precitec Optronik Gmbh | Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer |
| DE102011051146B3 (de) * | 2011-06-17 | 2012-10-04 | Precitec Optronik Gmbh | Prüfverfahren zum Prüfen einer Verbindungsschicht zwischen waferförmigen Proben |
| WO2013130297A1 (en) * | 2012-02-28 | 2013-09-06 | 3M Innovative Properties Company | Multiphoton curing methods using negative contrast compositions |
| US9040921B2 (en) * | 2012-07-28 | 2015-05-26 | Harvard Apparatus Regenerative Technology, Inc. | Analytical methods |
| DE102012111008B4 (de) | 2012-11-15 | 2014-05-22 | Precitec Optronik Gmbh | Optisches Messverfahren und optische Messvorrichtung zum Erfassen einer Oberflächentopographie |
| US9005878B2 (en) | 2013-03-19 | 2015-04-14 | Eastman Kodak Company | Forming patterns using thiosulfate polymer compositions |
| US9499650B2 (en) | 2013-03-19 | 2016-11-22 | Eastman Kodak Company | Thiosulfate polymers |
| US8916336B2 (en) | 2013-03-19 | 2014-12-23 | Eastman Kodak Company | Patterning method using thiosulfate polymer and metal nanoparticles |
| US8986924B2 (en) | 2013-03-19 | 2015-03-24 | Eastman Kodak Company | Method of sequestering metals using thiosulfate polymers |
| US9772552B2 (en) * | 2013-03-19 | 2017-09-26 | Eastman Kodak Company | Thiosulfate polymer compositions and articles |
| CN105324629B (zh) | 2013-06-17 | 2018-08-24 | 普雷茨特激光技术有限公司 | 用于获取距离差的光学测量装置以及光学测量方法 |
| EP3077421B1 (en) | 2013-12-06 | 2018-01-31 | 3M Innovative Properties Company | Liquid photoreactive composition and method of fabricating structures |
| TWI583916B (zh) * | 2015-10-08 | 2017-05-21 | 財團法人工業技術研究院 | 雷射共焦量測方法及應用此方法之雷射共焦量測裝置 |
| US10234265B2 (en) | 2016-12-12 | 2019-03-19 | Precitec Optronik Gmbh | Distance measuring device and method for measuring distances |
| DE102017126310A1 (de) | 2017-11-09 | 2019-05-09 | Precitec Optronik Gmbh | Abstandsmessvorrichtung |
| US11150484B2 (en) | 2018-05-18 | 2021-10-19 | Lawrence Livermore National Security, Llc | System and method for curved light sheet projection during two-photon polymerization |
| DE102018130901A1 (de) | 2018-12-04 | 2020-06-04 | Precitec Optronik Gmbh | Optische Messeinrichtung |
| EP4168734B1 (de) | 2020-06-19 | 2025-09-24 | Precitec Optronik GmbH | Chromatisch konfokale messvorrichtung |
| DE102021113189A1 (de) | 2021-05-20 | 2022-11-24 | Nanoscribe Holding Gmbh | Verfahren zum Erzeugen einer dreidimensionalen Zielstruktur in einem Lithographiematerial mittels einer Laserlithographie-Vorrichtung |
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| AU2001270321A1 (en) * | 2000-06-15 | 2001-12-24 | 3M Innovative Properties Company | Method for making or adding structures to an article |
| DE60139620D1 (de) * | 2000-06-15 | 2009-10-01 | 3M Innovative Properties Co | Methode und gerät zur erzielung wiederholter multiphotonabsorption |
| JP2001287273A (ja) * | 2001-03-12 | 2001-10-16 | Three D Syst Inc | 立体造形方法及び装置 |
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| US8304313B2 (en) * | 2004-08-23 | 2012-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
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- 2006-12-20 JP JP2008547458A patent/JP4880701B2/ja not_active Expired - Fee Related
- 2006-12-20 US US12/158,143 patent/US7893410B2/en not_active Expired - Fee Related
- 2006-12-20 WO PCT/US2006/048498 patent/WO2007073482A2/en not_active Ceased
- 2006-12-20 DE DE112006003494T patent/DE112006003494T5/de not_active Withdrawn
- 2006-12-20 CN CN2006800482953A patent/CN101341578B/zh not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| US7893410B2 (en) | 2011-02-22 |
| JP2009521315A (ja) | 2009-06-04 |
| CN101341578B (zh) | 2010-12-08 |
| CN101341578A (zh) | 2009-01-07 |
| US20090250635A1 (en) | 2009-10-08 |
| WO2007073482A3 (en) | 2007-09-27 |
| WO2007073482A2 (en) | 2007-06-28 |
| JP4880701B2 (ja) | 2012-02-22 |
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