DE1085676B - Verfahren zum Reinigen von kristallisierbaren Stoffen durch Zonenschmelzen - Google Patents
Verfahren zum Reinigen von kristallisierbaren Stoffen durch ZonenschmelzenInfo
- Publication number
- DE1085676B DE1085676B DES61960A DES0061960A DE1085676B DE 1085676 B DE1085676 B DE 1085676B DE S61960 A DES61960 A DE S61960A DE S0061960 A DES0061960 A DE S0061960A DE 1085676 B DE1085676 B DE 1085676B
- Authority
- DE
- Germany
- Prior art keywords
- branch
- melting
- zone
- main branch
- channels
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 24
- 238000004140 cleaning Methods 0.000 title claims description 18
- 230000008569 process Effects 0.000 title claims description 8
- 238000004857 zone melting Methods 0.000 title claims description 7
- 239000000126 substance Substances 0.000 title description 3
- 239000000463 material Substances 0.000 claims description 58
- 238000002844 melting Methods 0.000 claims description 58
- 230000008018 melting Effects 0.000 claims description 58
- 239000012535 impurity Substances 0.000 claims description 22
- 229910052732 germanium Inorganic materials 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 14
- 230000000694 effects Effects 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 13
- 230000009471 action Effects 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 238000001953 recrystallisation Methods 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000356 contaminant Substances 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 2
- 230000007246 mechanism Effects 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 239000011253 protective coating Substances 0.000 claims 2
- 238000013517 stratification Methods 0.000 claims 2
- 230000032258 transport Effects 0.000 claims 2
- 230000004913 activation Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000007812 deficiency Effects 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 230000005012 migration Effects 0.000 claims 1
- 238000013508 migration Methods 0.000 claims 1
- 239000012768 molten material Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000012549 training Methods 0.000 claims 1
- 238000013519 translation Methods 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000002290 germanium Chemical class 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/005—Continuous growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/074—Horizontal melt solidification
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Manufacture And Refinement Of Metals (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL248736D NL248736A (en:Method) | 1959-02-27 | ||
| DES61960A DE1085676B (de) | 1959-02-27 | 1959-02-27 | Verfahren zum Reinigen von kristallisierbaren Stoffen durch Zonenschmelzen |
| CH197560A CH406159A (de) | 1959-02-27 | 1960-02-22 | Verfahren zum Reinigen von kristallisierbaren Stoffen |
| US10256A US3099550A (en) | 1959-02-27 | 1960-02-23 | Purifying crystallizable semiconductor materials by zone melting |
| FR819330A FR1249058A (fr) | 1959-02-27 | 1960-02-23 | Procédé pour purifier des substances cristallisables par fusion de zone |
| GB6824/60A GB928354A (en) | 1959-02-27 | 1960-02-26 | Improvements in or relating to purifying crystallisable or crystalline substances |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES61960A DE1085676B (de) | 1959-02-27 | 1959-02-27 | Verfahren zum Reinigen von kristallisierbaren Stoffen durch Zonenschmelzen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1085676B true DE1085676B (de) | 1960-07-21 |
Family
ID=7495251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES61960A Pending DE1085676B (de) | 1959-02-27 | 1959-02-27 | Verfahren zum Reinigen von kristallisierbaren Stoffen durch Zonenschmelzen |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3099550A (en:Method) |
| CH (1) | CH406159A (en:Method) |
| DE (1) | DE1085676B (en:Method) |
| FR (1) | FR1249058A (en:Method) |
| GB (1) | GB928354A (en:Method) |
| NL (1) | NL248736A (en:Method) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2835612A (en) * | 1954-08-23 | 1958-05-20 | Motorola Inc | Semiconductor purification process |
| US2902350A (en) * | 1954-12-21 | 1959-09-01 | Rca Corp | Method for single crystal growth |
| NL234568A (en:Method) * | 1958-03-05 |
-
0
- NL NL248736D patent/NL248736A/xx unknown
-
1959
- 1959-02-27 DE DES61960A patent/DE1085676B/de active Pending
-
1960
- 1960-02-22 CH CH197560A patent/CH406159A/de unknown
- 1960-02-23 US US10256A patent/US3099550A/en not_active Expired - Lifetime
- 1960-02-23 FR FR819330A patent/FR1249058A/fr not_active Expired
- 1960-02-26 GB GB6824/60A patent/GB928354A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3099550A (en) | 1963-07-30 |
| NL248736A (en:Method) | |
| GB928354A (en) | 1963-06-12 |
| CH406159A (de) | 1966-01-31 |
| FR1249058A (fr) | 1960-12-23 |
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