DE1043513B - Verfahren zur Herstellung von Halbleiteranordnungen mit Behandlung der Halbleiteroberflaeche und aufgesetzter Nadelelektrode - Google Patents

Verfahren zur Herstellung von Halbleiteranordnungen mit Behandlung der Halbleiteroberflaeche und aufgesetzter Nadelelektrode

Info

Publication number
DE1043513B
DE1043513B DEN10355A DEN0010355A DE1043513B DE 1043513 B DE1043513 B DE 1043513B DE N10355 A DEN10355 A DE N10355A DE N0010355 A DEN0010355 A DE N0010355A DE 1043513 B DE1043513 B DE 1043513B
Authority
DE
Germany
Prior art keywords
silicon
needle electrode
semiconductor
semiconductor surface
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN10355A
Other languages
German (de)
English (en)
Inventor
James William Granville
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAT RES DEV
National Research Development Corp UK
Original Assignee
NAT RES DEV
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAT RES DEV, National Research Development Corp UK filed Critical NAT RES DEV
Publication of DE1043513B publication Critical patent/DE1043513B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DEN10355A 1954-03-18 1955-03-16 Verfahren zur Herstellung von Halbleiteranordnungen mit Behandlung der Halbleiteroberflaeche und aufgesetzter Nadelelektrode Pending DE1043513B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7887/54A GB769702A (en) 1954-03-18 1954-03-18 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
DE1043513B true DE1043513B (de) 1958-11-13

Family

ID=9841708

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN10355A Pending DE1043513B (de) 1954-03-18 1955-03-16 Verfahren zur Herstellung von Halbleiteranordnungen mit Behandlung der Halbleiteroberflaeche und aufgesetzter Nadelelektrode

Country Status (4)

Country Link
BE (1) BE536485A (enrdf_load_stackoverflow)
DE (1) DE1043513B (enrdf_load_stackoverflow)
FR (1) FR1125496A (enrdf_load_stackoverflow)
GB (1) GB769702A (enrdf_load_stackoverflow)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2469569A (en) * 1945-03-02 1949-05-10 Bell Telephone Labor Inc Point contact negative resistance devices
CH262415A (de) * 1945-04-28 1949-06-30 Hugh Brittain Francis Kristallgleichrichter und Verfahren zu seiner Herstellung.
CH263779A (de) * 1943-08-11 1949-09-15 Gen Electric Co Ltd Verfahren zur Herstellung eines Kristall-Gleichrichters.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH263779A (de) * 1943-08-11 1949-09-15 Gen Electric Co Ltd Verfahren zur Herstellung eines Kristall-Gleichrichters.
US2469569A (en) * 1945-03-02 1949-05-10 Bell Telephone Labor Inc Point contact negative resistance devices
CH262415A (de) * 1945-04-28 1949-06-30 Hugh Brittain Francis Kristallgleichrichter und Verfahren zu seiner Herstellung.

Also Published As

Publication number Publication date
BE536485A (enrdf_load_stackoverflow)
GB769702A (en) 1957-03-13
FR1125496A (fr) 1956-10-31

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