DE102014116991A1 - CVD- oder PVD-Reaktor zum Beschichten großflächiger Substrate - Google Patents

CVD- oder PVD-Reaktor zum Beschichten großflächiger Substrate Download PDF

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Publication number
DE102014116991A1
DE102014116991A1 DE102014116991.3A DE102014116991A DE102014116991A1 DE 102014116991 A1 DE102014116991 A1 DE 102014116991A1 DE 102014116991 A DE102014116991 A DE 102014116991A DE 102014116991 A1 DE102014116991 A1 DE 102014116991A1
Authority
DE
Germany
Prior art keywords
holding device
cvd
gas inlet
pvd coating
housing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102014116991.3A
Other languages
German (de)
English (en)
Inventor
Walter Franken
Bernhard Zintzen
Henricus Wilhelmus Aloysius Janssen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Priority to DE102014116991.3A priority Critical patent/DE102014116991A1/de
Priority to KR1020177016394A priority patent/KR20170084278A/ko
Priority to EP15800749.2A priority patent/EP3221490B1/de
Priority to CN201580069344.0A priority patent/CN107109649B/zh
Priority to US15/528,476 priority patent/US10822701B2/en
Priority to JP2017527320A priority patent/JP6647301B2/ja
Priority to PCT/EP2015/076972 priority patent/WO2016079184A1/de
Priority to TW104138544A priority patent/TWI684482B/zh
Publication of DE102014116991A1 publication Critical patent/DE102014116991A1/de
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/02—Feed or outlet devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/03—Pressure vessels, or vacuum vessels, having closure members or seals specially adapted therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
DE102014116991.3A 2014-11-20 2014-11-20 CVD- oder PVD-Reaktor zum Beschichten großflächiger Substrate Withdrawn DE102014116991A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102014116991.3A DE102014116991A1 (de) 2014-11-20 2014-11-20 CVD- oder PVD-Reaktor zum Beschichten großflächiger Substrate
KR1020177016394A KR20170084278A (ko) 2014-11-20 2015-11-18 대면적 기판들을 코팅하기 위한 cvd- 또는 pvd-반응기
EP15800749.2A EP3221490B1 (de) 2014-11-20 2015-11-18 Cvd- oder pvd-reaktor zum beschichten grossflächiger substrate
CN201580069344.0A CN107109649B (zh) 2014-11-20 2015-11-18 用于对大面积基板覆层的cvd或pvd覆层设备
US15/528,476 US10822701B2 (en) 2014-11-20 2015-11-18 CVD or PVD reactor for coating large-area substrates
JP2017527320A JP6647301B2 (ja) 2014-11-20 2015-11-18 大面積基板コーティング用ｃｖｄ又はｐｖｄ反応炉
PCT/EP2015/076972 WO2016079184A1 (de) 2014-11-20 2015-11-18 Cvd- oder pvd-reaktor zum beschichten grossflächiger substrate
TW104138544A TWI684482B (zh) 2014-11-20 2015-11-20 Ｃｖｄ或ｐｖｄ塗佈裝置及其操作方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102014116991.3A DE102014116991A1 (de) 2014-11-20 2014-11-20 CVD- oder PVD-Reaktor zum Beschichten großflächiger Substrate

Publications (1)

Publication Number Publication Date
DE102014116991A1 true DE102014116991A1 (de) 2016-05-25

Family

ID=54703945

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102014116991.3A Withdrawn DE102014116991A1 (de) 2014-11-20 2014-11-20 CVD- oder PVD-Reaktor zum Beschichten großflächiger Substrate

Country Status (8)

Country Link
US (1) US10822701B2 (https=)
EP (1) EP3221490B1 (https=)
JP (1) JP6647301B2 (https=)
KR (1) KR20170084278A (https=)
CN (1) CN107109649B (https=)
DE (1) DE102014116991A1 (https=)
TW (1) TWI684482B (https=)
WO (1) WO2016079184A1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015118765A1 (de) 2014-11-20 2016-06-09 Aixtron Se Vorrichtung zum Beschichten eines großflächigen Substrats
DE102015101461A1 (de) 2015-02-02 2016-08-04 Aixtron Se Vorrichtung zum Beschichten eines großflächigen Substrats
DE102017105374A1 (de) 2017-03-14 2018-09-20 Aixtron Se Vorrichtung zum Abscheiden einer strukturierten Schicht auf einem Substrat sowie Verfahren zum Einrichten der Vorrichtung
DE102017105379A1 (de) 2017-03-14 2018-09-20 Aixtron Se Substrathalteranordnung mit Maskenträger
DE102017120529A1 (de) 2017-09-06 2019-03-07 Aixtron Se Vorrichtung zum Abscheiden einer strukturierten Schicht auf einem Substrat unter Verwendung einer Maske
CN112342529A (zh) * 2020-09-24 2021-02-09 杭州盾源聚芯半导体科技有限公司 一种具有连接头的喷射管

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201513339D0 (en) * 2015-07-29 2015-09-09 Pilkington Group Ltd Coating apparatus
WO2019211280A2 (de) 2018-04-30 2019-11-07 Aixtron Se Vorrichtung zum beschichten eines substrates mit einer kohlenstoffhaltigen beschichtung
CN116288232B (zh) * 2023-03-09 2025-04-11 株洲三一硅能技术有限公司 泵盖组件及其pvd真空设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2361744A1 (de) * 1972-12-15 1974-07-04 Ppg Industries Inc Aufbringen einer beschichtung auf ein substrat
EP1815493B1 (en) 2004-11-24 2008-04-02 OC Oerlikon Balzers AG Vacuum processing chamber for very large area substrates
US20080317973A1 (en) 2007-06-22 2008-12-25 White John M Diffuser support
US20090250008A1 (en) * 2005-07-19 2009-10-08 Tokyo Electron Limited Gas treatment apparatus
DE102013101534A1 (de) 2013-02-15 2014-08-21 Aixtron Se Gasverteiler für einen CVD-Reaktor

Family Cites Families (7)

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US3970037A (en) * 1972-12-15 1976-07-20 Ppg Industries, Inc. Coating composition vaporizer
JP3729939B2 (ja) * 1996-07-12 2005-12-21 松下電器産業株式会社 プラズマ処理方法及び装置
KR100476845B1 (ko) * 1999-04-06 2005-03-17 동경 엘렉트론 주식회사 전극, 적재대, 플라즈마 처리 장치 및 전극과 적재대의제조 방법
US20090098220A1 (en) * 2007-10-12 2009-04-16 Lance Ashworth Liquid pharmaceutical preparation comprising forskolin for promoting lean body mass
US8673080B2 (en) * 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
JP2010182729A (ja) * 2009-02-03 2010-08-19 Fuji Electric Holdings Co Ltd プラズマｃｖｄ装置
CN102953050B (zh) * 2011-08-26 2014-06-18 杭州士兰明芯科技有限公司 大直径mocvd反应器的喷淋头

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2361744A1 (de) * 1972-12-15 1974-07-04 Ppg Industries Inc Aufbringen einer beschichtung auf ein substrat
EP1815493B1 (en) 2004-11-24 2008-04-02 OC Oerlikon Balzers AG Vacuum processing chamber for very large area substrates
US20090250008A1 (en) * 2005-07-19 2009-10-08 Tokyo Electron Limited Gas treatment apparatus
US20080317973A1 (en) 2007-06-22 2008-12-25 White John M Diffuser support
DE102013101534A1 (de) 2013-02-15 2014-08-21 Aixtron Se Gasverteiler für einen CVD-Reaktor

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015118765A1 (de) 2014-11-20 2016-06-09 Aixtron Se Vorrichtung zum Beschichten eines großflächigen Substrats
DE102015101461A1 (de) 2015-02-02 2016-08-04 Aixtron Se Vorrichtung zum Beschichten eines großflächigen Substrats
DE102017105374A1 (de) 2017-03-14 2018-09-20 Aixtron Se Vorrichtung zum Abscheiden einer strukturierten Schicht auf einem Substrat sowie Verfahren zum Einrichten der Vorrichtung
DE102017105379A1 (de) 2017-03-14 2018-09-20 Aixtron Se Substrathalteranordnung mit Maskenträger
WO2018166954A2 (de) 2017-03-14 2018-09-20 Aixtron Se Substrathalteranordnung mit maskenträger
WO2018166953A1 (de) 2017-03-14 2018-09-20 Aixtron Se Vorrichtung zum abscheiden einer strukturierten schicht auf einem substrat sowie verfahren zum einrichten der vorrichtung
US11396697B2 (en) 2017-03-14 2022-07-26 Aixtron Se Device for separating a structured layer on a substrate, and method for setting up the device
US11479851B2 (en) 2017-03-14 2022-10-25 Aixtron Se Substrate holder arrangement with mask support
DE102017120529A1 (de) 2017-09-06 2019-03-07 Aixtron Se Vorrichtung zum Abscheiden einer strukturierten Schicht auf einem Substrat unter Verwendung einer Maske
WO2019048367A1 (de) 2017-09-06 2019-03-14 Aixtron Se Vorrichtung zum abscheiden einer strukturierten schicht auf einem substrat unter verwendung einer maske
CN112342529A (zh) * 2020-09-24 2021-02-09 杭州盾源聚芯半导体科技有限公司 一种具有连接头的喷射管

Also Published As

Publication number Publication date
US20170314134A1 (en) 2017-11-02
WO2016079184A1 (de) 2016-05-26
CN107109649B (zh) 2021-01-05
JP6647301B2 (ja) 2020-02-14
EP3221490B1 (de) 2020-03-04
TWI684482B (zh) 2020-02-11
EP3221490A1 (de) 2017-09-27
JP2017538036A (ja) 2017-12-21
KR20170084278A (ko) 2017-07-19
CN107109649A (zh) 2017-08-29
TW201628704A (zh) 2016-08-16
US10822701B2 (en) 2020-11-03

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