DE102013226334A1 - Schaltungsträger mit einem sinterverbundenenen Halbleiterbaustein - Google Patents

Schaltungsträger mit einem sinterverbundenenen Halbleiterbaustein Download PDF

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Publication number
DE102013226334A1
DE102013226334A1 DE102013226334.1A DE102013226334A DE102013226334A1 DE 102013226334 A1 DE102013226334 A1 DE 102013226334A1 DE 102013226334 A DE102013226334 A DE 102013226334A DE 102013226334 A1 DE102013226334 A1 DE 102013226334A1
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Prior art keywords
sintered
circuit carrier
expansion coefficient
sintered layer
semiconductor device
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DE102013226334B4 (de
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Hubert Zoller
Alfred Goerlach
Thomas Knupfer
Thomas Kalich
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Robert Bosch GmbH
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Robert Bosch GmbH
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Abstract

Die Erfindung betrifft einen Schaltungsträger. Der Schaltungsträger weist einen insbesondere massiv ausgebildeten Halbleiterbaustein auf. Der Halbleiterbaustein weist wenigstens einen elektrischen Anschluss auf. Bevorzugt bildet der elektrische Anschluss einen Oberflächenbereich des Halbleiterbausteins. Der Anschluss ist mittels wenigstens eines gesinterten elektrischen Verbindungsmittels mit einem elektrischen Kontakt verbunden. Der Kontakt und der Halbleiterbaustein bilden jeweils einen Fügepartner für das gesinterte Verbindungsmittel. Erfindungsgemäß ist das Verbindungsmittel zwischen dem Anschluss und dem Kontakt durch wenigstens zwei in ihrer flachen Erstreckung einander kontaktierenden Sinterschichten gebildet. Ein thermischer Ausdehnungskoeffizient wenigstens einer der Sinterschichten oder aller Sinterschichten liegt bevorzugt zwischen dem Ausdehnungskoeffizienten des Fügepartners und dem Ausdehnungskoeffizienten der zu der Sinterschicht benachbarten Sinterschicht.

Description

  • Stand der Technik
  • Die Erfindung betrifft einen Schaltungsträger. Der Schaltungsträger weist einen insbesondere massiv ausgebildeten Halbleiterbaustein auf. Der Halbleiterbaustein weist wenigstens einen elektrischen Anschluss auf. Bevorzugt bildet der elektrische Anschluss einen Oberflächenbereich des Halbleiterbausteins. Der Anschluss ist mittels wenigstens eines gesinterten elektrischen Verbindungsmittels mit einem elektrischen Kontakt verbunden. Der Kontakt und der Halbleiterbaustein bilden jeweils einen Fügepartner für das gesinterte Verbindungsmittel.
  • Bei aus dem Stand der Technik bekannten Halbleiterbausteinen, insbesondere massiv ausgebildeten Halbleiterbausteinen, auch Bare-Die genannt, besteht das Problem, dass es bei einem Betrieb zu einer Rissbildung des Halbleiterbausteins oder des Verbindungsmittels, insbesondere einer Silber-Sinter-Verbindung, kommen kann. Weiter kann beim Betrieb eine Delamination zwischen der Sinterschicht und einem durch eine Metallschicht gebildeten elektrischen Anschluss des Halbleiterbausteins, oder zwischen dem Anschluss und dem Halbleiterbaustein selbst auftreten.
  • Offenbarung der Erfindung
  • Erfindungsgemäß ist das Verbindungsmittel der eingangs genannten Art zwischen dem Anschluss und dem Kontakt durch wenigstens zwei in ihrer flachen Erstreckung einander kontaktierenden Sinterschichten gebildet. Ein thermischer Ausdehnungskoeffizient wenigstens einer der Sinterschichten oder aller Sinterschichten liegt bevorzugt zwischen dem Ausdehnungskoeffizienten des Fügepartners und dem Ausdehnungskoeffizienten der zu der Sinterschicht benachbarten Sinterschicht.
  • Bevorzugt sind die thermischen Ausdehnungskoeffizienten von zwei aneinandergrenzenden Sinterschichten zueinander verschieden.
  • Dadurch kann vorteilhaft eine in diesem Ausführungsbeispiel gestufte Anpassung des thermischen Ausdehnungskoeffizienten von dem Halbleitermaterial, bis hin zu dem elektrischen Kontakt erzeugt sein.
  • Es wurde nämlich erkannt, dass zueinander verschiedene thermische Ausdehnungskoeffizienten des Halbleiterbausteins, insbesondere eines Halbleitermaterials des Halbleiterbausteins, dem Verbindungsmittel und dem elektrischen Kontakt die eingangs erwähnte Rissbildung bewirken kann.
  • In einer bevorzugten Ausführungsform ist das Verbindungsmittel zwischen dem Anschluss und dem Kontakt durch wenigstens drei oder wenigstens vier in ihrer flachen Erstreckung einander kontaktierenden Sinterschichten gebildet. Bevorzugt liegt ein thermischer Ausdehnungskoeffizient der Sinterschicht zwischen dem Ausdehnungskoeffizienten der zu der Sinterschicht benachbarten Sinterschichten beziehungsweise des Fügepartners. So kann vorteilhaft eine gute Stufenanpassung des Ausdehnungskoeffizienten zwischen den Fügepartnern gebildet sein.
  • Beispielsweise weist das Halbleitermaterial des Halbleiterbausteins den kleinsten thermischen Ausdehnungskoeffizienten auf. Vorteilhaft weist die Sinterschicht, welche den Halbleiterbaustein über den elektrischen Anschluss kontaktiert, einen thermischen Ausdehnungskoeffizienten auf, welcher größer ist als der thermische Ausdehnungskoeffizient des Halbleitermaterials. Die Sinterschicht, welche den Halbleiterbaustein über den elektrischen Anschluss unmittelbar kontaktiert, ist von einer weiteren Sinterschicht, insbesondere einer reinen Silberschicht, kontaktiert. Die reine Silberschicht weist beispielsweise einen thermischen Ausdehnungskoeffizienten von 19 ppm pro Kelvin auf. Das Halbleitermaterial weist beispielsweise einen thermischen Ausdehnungskoeffizienten von drei ppm pro Kelvin auf. Die Sinterschicht, welche zwischen der reinen Silbersinterschicht und dem Halbleiterbaustein angeordnet ist, weist bevorzugt einen thermischen Ausdehnungskoeffizienten auf, welcher zwischen dem Ausdehnungskoeffizient der Silbersinterschicht und dem des Halbleiterbausteins liegt, bevorzugt in der Mitte zwischen den zuvor genannten Ausdehnungskoeffizienten. Beispielsweise beträgt der thermische Ausdehnungskoeffizient der Sinterschicht, welcher den Halbleiterbaustein über den elektrischen Anschluss kontaktiert, elf ppm pro Kelvin. Die so gebildete Sinterschicht kann beispielsweise mittels eines Beimischens oder Anfüllens von Silber erzeugt werden, wobei das beigemischte oder angefüllte Material einen thermischen Ausdehnungskoeffizienten aufweist, welcher kleiner ist als der Ausdehnungskoeffizient von Silber. Für die zuvor genannte zwischen der Silbersinterschicht und dem Halbleiterbaustein angeordnete Sinterschicht mögliche Füllpartner sind beispielsweise Wolfram, welches einen thermischen Ausdehnungskoeffizient von 4,5 ppm pro Kelvin aufweist, oder Eisen, welches einen thermischen Ausdehnungskoeffizient von 11,8 ppm pro Kelvin aufweist.
  • In einer bevorzugten Ausführungsform des Schaltungsträgers ist der Ausdehnungskoeffizient des Halbleitermaterials kleiner als der Ausdehnungskoeffizient des elektrischen Kontaktes. So kann vorteilhaft ausgehend vom Halbleitermaterial, welches beispielsweise im Falle von Silizium einem thermischen Ausdehnungskoeffizienten von 2,6 ppm pro Kelvin aufweist, zum elektrischen Kontakt hin ein stufenweiser Anstieg des Ausdehnungskoeffizienten in den jeweiligen Schichten ausgebildet sein.
  • In einer bevorzugten Ausführungsform weist der Halbleiterbaustein wenigstens zwei elektrische Anschlüsse auf, welche jeweils durch zueinander parallel erstreckende Flächenbereiche des Halbleiterbausteins gebildet sind. Bevorzugt ist ein Anschluss über wenigstens zwei Sinterschichten durch den Kontakt kontaktiert und der weitere Anschluss über wenigstens zwei Sinterschichten durch einen mit einem Substrat des Schaltungsträgers verbundenen Kontakt, oder einen durch das Substrat selbst gebildeten Kontakt kontaktiert. Der durch das Substrat selbst gebildete Kontakt ist beispielsweise durch ein Kupferblech gebildet.
  • Mittels des so gebildeten Schaltungsträgers kann der Halbleiterbaustein vorteilhaft nach Art eines Sandwiches zwischen Silbersinterschichten eingebunden sein, wobei die Silbersinterschichten selbst über Zwischensinterschichten an den Halbleiterbaustein beziehungsweise an den elektrischen Kontakt angebunden sind.
  • In einer bevorzugten Ausführungsform ist wenigstens eine Sinterschicht durch eine silberhaltige Schicht oder eine Silberschicht gebildet. So kann vorteilhaft eine aufwandsgünstig bereitzustellende und gut elektrisch leitfähige Sinterschicht ausgebildet sein.
  • In einer bevorzugten Ausführungsform weist wenigstens eine Sinterschicht einen Füllstoff auf, wobei der Füllstoff ausgebildet ist, beim Versintern einen Stoffschluss mit einem Matrixmaterial der Sinterschicht auszubilden. Das Matrixmaterial der Sinterschicht bildet bevorzugt einen Hauptanteil, insbesondere einen Hauptvolumenanteil der Sinterschicht. Die so den Füllstoff aufweisende Sinterschicht kann die zuvor erwähnte Sinterschicht aus reinem Silber ersetzen, so dass der thermische Ausdehnungskoeffizient kleiner sein kann als der des elektrischen Kontaktes, insbesondere Kupferkontaktes.
  • In einer bevorzugten Ausführungsform des Schaltungsträgers umfasst der Füllstoff ein Metall, insbesondere wenigstens ein Metall aus der Gruppe, nur ein Metall aus der Gruppe, oder eine Mischung der Metalle aus der Gruppe umfassend Eisen, Wolfram, Invar und Kovar. Das Metall weist bevorzugt eine kleinere thermische Ausdehnung auf als das Matrixmaterial, insbesondere Silber. Das Invar weist vorteilhaft nur eine geringe oder keine thermische Ausdehnung auf. Bevorzugt weist das Invar Eisen und Nickel auf. Weiter bevorzugt beträgt ein Nickelanteil des Invars, insbesondere einer Invar-Legierung zwischen 30 und 50 Prozent, weiter bevorzugt zwischen 33 und 38 Prozent, besonders bevorzugt zwischen 35 und 36 Prozent. Bevorzugt weist die Invar-Legierung zwischen 2 und 5 Prozent Kobalt auf.
  • Weitere vorteilhafte Invar-Legierungen sind jeweils aus Legierungsbestandteilen umfassend Nickel und Eisen, Platin und Eisen, Palladium und Eisen, Mangan und Eisen, Mangan und Kobalt, Platin, Nickel und Eisen, Mangan, Nickel und Eisen, Kobalt, Mangan und Eisen, Chrom und Eisen gebildet.
  • Das Kovar weist bevorzugt Eisen, Nickel und Kobalt auf. Bevorzugt beträgt ein Nickelanteil des Kovars bis zu 30 Prozent, ein Kobaltanteil zwischen 15 und 20 Prozent, bevorzugt 17 Prozent und der Restanteil ist durch Eisen gebildet.
  • So kann vorteilhaft aufwandsgünstig von einer Silbersinterschicht ausgehend, zu dem Halbleitermaterial eine gefüllte Silbersinterschicht gebildet sein, welche einen kleineren Ausdehnungskoeffizienten als Silber aufweist und einen größeren Ausdehnungskoeffizienten als das Halbleitermaterial des Halbleiterbausteins.
  • In einer bevorzugten Ausführungsform weist wenigstens eine Sinterschicht Füllpartikel auf. Die Füllpartikel sind ausgebildet, beim Versintern keinen Stoffschluss mit einem Sintermetall der Sinterschicht auszubilden und in der gesinterten Schicht als Füllpartikel erhalten zu bleiben. Ein Ausdehnungskoeffizient der Füllpartikel unterscheidet sich bevorzugt von dem Ausdehnungskoeffizient des Sintermetalls. Das Sintermetall ist bevorzugt Silber. Die Füllpartikel sind bevorzugt durch wenigstens ein Metalloxid, insbesondere Keramikpartikel oder Glaspartikel, gebildet. Die Keramikpartikel sind beispielsweise Aluminiumoxidpartikel, die Glaspartikel beispielsweise Siliziumdioxidpartikel. Die Metalloxidpartikel können vorteilhaft – in entsprechend kleinem Anteil zu dem Matrixmaterial der Sinterschicht zugesetzt, ohne die elektrische Leitfähigkeit der so gebildeten beigemischten Sinterschicht wesentlich zu verschlechtern – den thermischen Ausdehnungskoeffizient und so eine Rissbildung in günstiger Weise beeinflussen. Die zuvor benannten Füllstoffe zum Ausbilden einer beigemischten Sinterschicht, insbesondere Eisen und/oder Wolfram, sind vorteilhaft selbst elektrisch leitfähig, sodass eine elektrische Leitfähigkeit der so beigemischten Sinterschicht nicht wesentlich im Vergleich zu einer reinen Silberschicht verschlechtert ist.
  • In einer bevorzugten Ausführungsform sind die Füllpartikel durch ein Halbleitermaterial gebildet. Das Halbleitermaterial ist beispielsweise Silizium oder Germanium oder Selen. Vorteilhaft weisen die Halbleitermaterialien als Beimischungspartner für das Sinter-Matrix-Material, beispielsweise Silber, sowohl einen kleinen thermischen Ausdehnungskoeffizient aus, der einen Gesamtausdehnungskoeffizienten der beigemischten Silberschicht im Vergleich zu einer reinen Silberschicht verkleinern kann, als auch dieselben kristallinen Eigenschaften, insbesondere kristallbildenden Eigenschaften wie das Halbleitermaterial, sodass die beigemischte Sinterschicht hinsichtlich ihrer Textur der Textur des Halbleitermaterials ähnlich ist.
  • Die Erfindung wird nun im Folgenden anhand von Figuren und weiteren Ausführungsbeispielen beschrieben. Weitere vorteilhafte Ausführungsvarianten ergeben sich aus den in den abhängigen Ansprüchen und in den Figuren beschriebenen Merkmalen.
  • 1 zeigt ein Ausführungsbeispiel für einen Schaltungsträger, bei dem ein Leistungshalbleiter mit einem Substrat und einem elektrisch leitfähigen Kontakt über eine thermisch optimierte Sinterverbindung stoffschlüssig verbunden ist;
  • 2 zeigt ein Ausführungsbeispiel für einen Schaltungsträger, bei dem ein Leistungshalbleiter einseitig mit einem keramischen Substrat und zwei mit dem Substrat verbundenen elektrisch leitfähigen Kontakten jeweils über eine thermisch optimierte Sinterverbindung stoffschlüssig verbunden ist.
  • 1 zeigt ein Ausführungsbeispiel für einen Schaltungsträger 1. Der Schaltungsträger 1 weist einen Halbleiterbaustein 2 auf, welcher in diesem Ausführungsbeispiel durch einen Leistungshalbleiter, insbesondere einen quaderförmigen Leistungshalbleiter, im Englischen auch Bare-Die genannt, gebildet ist. Der Halbleiterbaustein 2 weist in diesem Ausführungsbeispiel zwei jeweils einen Oberflächenbereich bildende und zueinander sich parallel erstreckende elektrische Anschlüsse 4 und 5 auf. Die Anschlüsse 4 und 5 sind beispielsweise jeweils durch eine Oberflächenmetallisierung des Halbleiterbausteins 2 gebildet, welche eine stoffschlüssige Sinteranbindung einer Sinterschicht beim Versintern des Halbleiterbausteins 2 mit einem elektrischen Kontakt erleichtert.
  • Der Schaltungsträger 1 weist in diesem Ausführungsbeispiel auch einen elektrischen Kontakt 7 auf und ein Substrat 8. Das Substrat 8 und der elektrische Kontakt 7 sind in diesem Ausführungsbeispiel jeweils als Kupferblech ausgebildet.
  • Der Halbleiterbaustein 2 ist über den elektrischen Anschluss 4 mit einer gefüllten Sinterschicht 13 verbunden. Die gefüllte Sinterschicht 13 weist in diesem Ausführungsbeispiel als Sintermatrixmaterial Silber und als Füllmaterial 14, welches einen Stoffschluss mit dem Sintermatrixmaterial ausbildet, insbesondere Eisen oder Invar auf. Zusätzlich zu dem Füllmaterial 14 weist die gefüllte Sinterschicht 13 Füllpartikel 15 auf. Die Füllpartikel 15 sind in diesem Ausführungsbeispiel aus Halbleitermaterial, insbesondere Silizium, gebildet. So kann die gefüllte Sinterschicht 13 vorteilhaft einen thermischen Ausdehnungskoeffizienten zwischen fünf und neun ppm pro Kelvin aufweisen. Die gefüllte Sinterschicht 13 ist über eine weitere Sinterschicht 9 mit dem elektrischen Kontakt 7 verbunden. Die weitere Sinterschicht 9 ist somit nach Art eines Sandwiches zwischen der gefüllten Sinterschicht 13 und dem elektrischen Kontakt 7 angeordnet. Die weitere Sinterschicht 9 weist einen thermischen Ausdehnungskoeffizienten auf, welcher zwischen dem Ausdehnungskoeffizienten der gefüllten Sinterschicht 13 und dem Ausdehnungskoeffizienten des elektrischen Kontakts 7 liegt.
  • Das Material des elektrischen Kontakts 7 ist beispielsweise Kupfer. Die Sinterschicht 9, welche beispielsweise Silber als Sintermatrixmaterial aufweist, kann zum Herabsetzen des Ausdehnungskoeffizienten von reinem Silber ein Füllmaterial 14, beispielsweise Eisen, aufweisen.
  • Der Halbleiterbaustein 2 ist mit dem elektrischen Anschluss 5 mit einer gefüllten Sinterschicht 12 verbunden. Die gefüllte Sinterschicht 12 weist wie die gefüllte Sinterschicht 13 ein Füllmaterial 14, beispielsweise Eisen, und Füllpartikel 15, beispielsweise Siliziumpartikel, auf. Der thermische Ausdehnungskoeffizient der gefüllten Sinterschicht 12 beträgt beispielsweise wie der thermische Ausdehnungskoeffizient der gefüllten Sinterschicht 13 zwischen fünf und neun ppm pro Kelvin.
  • Die gefüllte Sinterschicht 12 ist über eine weitere Sinterschicht 11 mit dem Substrat 8, beispielsweise einem Kupferblech, verbunden. Die Sinterschicht 11 weist wie die Sinterschicht 9 Silber als Matrixsintermaterial und zum Herabsetzen des thermischen Ausdehnungskoeffizienten ein Füllmaterial 14, beispielsweise Eisen oder Wolfram auf.
  • Die Sinterschichten 9, 13, 12 und 11 können jeweils zusätzlich oder unabhängig von dem Füllmaterial 14 wenigstens ein weiteres Füllmaterial 18 aufweisen, beispielsweise Invar.
  • Der elektrische Kontakt 7 und das Substrat 8, welche jeweils einen zuvor genannten Fügepartner bilden, sind beispielsweise aus Kupfer gebildet und weisen einen thermischen Ausdehnungskoeffizienten auf, welcher größer ist als der thermische Ausdehnungskoeffizient des Halbleiterbausteins 2. Die Sinterschichten 9 und 11 weisen jeweils einen thermischen Ausdehnungskoeffizienten auf, welcher kleiner ist als der Ausdehnungskoeffizient des elektrischen Kontakts 7 beziehungsweise des Substrats 8 und welcher größer ist als der thermische Ausdehnungskoeffizient des Halbleiterbausteins 2. Die Sinterschichten 12 und 13 weisen jeweils einen thermischen Ausdehnungskoeffizienten auf, welcher größer ist als der des Halbleiterbausteins 2 und welcher kleiner ist als der thermische Ausdehnungskoeffizient der Sinterschichten 9 und 11. Somit liegt der thermische Ausdehnungskoeffizient der Sinterschicht 9 zwischen dem Ausdehnungskoeffizienten des elektrischen Anschlusses 7 und dem Ausdehnungskoeffizienten der Sinterschicht 13 und der Ausdehnungskoeffizient der Sinterschicht 13 zwischen dem Ausdehnungskoeffizienten der Sinterschicht 9 und dem Ausdehnungskoeffizienten des Halbleiterbausteins 2.
  • Die thermischen Ausdehnungskoeffizienten der Sinterschichten 11 und 12 liegen somit ebenfalls zwischen den thermischen Ausdehnungskoeffizienten der zu den jeweils benachbarten Sinterschichten beziehungsweise Fügepartnern.
  • Der in 1 gezeigte Halbleiterbaustein 2 ist beispielsweise durch einen Transistor, insbesondere einen Feldeffekttransistor oder ein IGBT, oder eine Diode gebildet. Die Anschlüsse 4 und 5 bilden jeweils einen Anschluss einer Schaltstrecke des Transistors, im Falle des Feldeffekttransistors einen Source- oder Drain-Anschluss, im Falle des IGBT (IGBT = Insulated-Gate-Bipolar-Transistor) einen Emitter-Anschluss oder einen Kollektor-Anschluss. Im Falle der Diode bilden die Anschlüsse 4 und 5 jeweils einen Kathodenanschluss beziehungsweise Anodenanschluss.
  • 2 zeigt ein Ausführungsbeispiel für einen Schaltungsträger 10. Der Schaltungsträger 10 weist ein Substrat auf, welches in diesem Ausführungsbeispiel als DBC-Substrat (DBC = Direct-Bonded-Copper) ausgebildet ist. Das DBC-Substrat weist in diesem Ausführungsbeispiel eine Keramikschicht 22 und zwei jeweils elektrisch voneinander isolierte Kupferschichten 20 und 21 auf. Die elektrisch leitfähige Schicht 21 ist mit einer Sinterschicht 11, insbesondere einem Teil einer Sinterschicht 11, verbunden, wobei die Sinterschicht 11 einen kleineren thermischen Ausdehnungskoeffizienten aufweist als die elektrisch leitfähige Schicht 21. Die Sinterschicht 11 ist – anders als die Sinterschicht 11 in 1 – über eine Sinterschicht 19 mit einer Sinterschicht 12 verbunden. Die Sinterschicht 12 ist mit einem elektrischen Anschluss 6 des Halbleiterbausteins 3 verbunden. Der Halbleiterbaustein 3 weist auf einer Seite, welche dem Substrat zugewandt ist, neben dem elektrischen Anschluss 6 auch einen weiteren elektrischen Anschluss 16 auf. Die elektrischen Anschlüsse 6 und 16 bilden jeweils einen Anschluss der durch den Halbleiterbaustein 3 gebildeten Diode, beispielsweise einen Anodenanschluss beziehungsweise einen Kathodenanschluss.
  • Der elektrische Anschluss 16 ist wie der elektrische Anschluss 6 mittels einer Sinterschicht 23, welche der Sinterschicht 12 entspricht und weiter über eine Sinterschicht 24, welche der Sinterschicht 19 entspricht und über eine Sinterschicht 25, welche der Sinterschicht 11 entspricht, mit der elektrisch leitfähigen Schicht 20 stoffschlüssig verbunden. Die Sinterschichten 19 und 24 weisen in diesem Ausführungsbeispiel wenigstens einen Füllstoff auf, insbesondere einen Füllstoff 14, nämlich Eisen, und einen weiteren Füllstoff 18, nämlich Invar. Die Füllstoffe 14 und 18 sind jeweils ausgebildet, einen thermischen Ausdehnungskoeffizienten der durch die Sinterschicht 19 beziehungsweise 24 gebildeten gefüllte Sinterschicht im Vergleich zu einem thermischen Ausdehnungskoeffizienten eines Sintermatrixmaterials, beispielsweise Silber, zu verändern, insbesondere zu verkleinern. Die Sinterschichten 12 und 23 weisen in diesem Ausführungsbeispiel jeweils Füllpartikel 15, insbesondere Siliziumpartikel und/oder Siliziumoxidpartikel auf. Die Füllpartikel wie die Füllpartikel 15 sind ausgebildet, einen thermischen Ausdehnungskoeffizienten der Sinterschicht 12 beziehungsweise 23 im Vergleich zu einem Ausdehnungskoeffizienten eines Matrixsintermaterials, insbesondere Silber, zu verkleinern, sodass der Ausdehnungskoeffizient der Sinterschichten 12 und 23 kleiner ist als ein thermischer Ausdehnungskoeffizient der Sinterschichten 19 und 24. Beispielsweise beträgt ein Ausdehnungskoeffizient einer Silbersinterschicht mit 33 Prozent Siliziumanteil im Silber 11 ppm pro Kelvin.
  • Die Sinterschichten 12, 19 und 11, wie auch die entsprechenden Sinterschichten 23, 24 und 25, bewirken so eine stufenweise Anpassung des thermischen Ausdehnungskoeffizienten von dem Substratmaterial zu dem Halbleiterbaustein 3 hin.
  • Der Schaltungsträger 10 kann – anders als in 2 dargestellt – auf einer vom Substrat 22 abgewandten Seite des Halbleiterbausteins 3 wenigstens einen weiteren elektrischen Kontakt, insbesondere Bond-Kontakt aufweisen. Der Bond-Kontakt kann beispielsweise im Falle eines Transistors als Halbleiterbaustein einen Steueranschluss, insbesondere Basis- oder Gate-Anschluss bilden.

Claims (10)

  1. Schaltungsträger (1, 10) mit einem massiv ausgebildeten Halbeiterbaustein (2, 3), wobei der Halbleiterbaustein (2, 3) wenigstens einen einen Oberflächenbereich des Halbleiterbausteins bildenden elektrischen Anschluss (4, 5, 6, 16) aufweist, wobei der Anschluss (4, 5, 6, 16) mittels wenigstens eines gesinterten elektrischen Verbindungsmittels mit einem elektrischen Kontakt (7, 8, 20, 21) stoffschlüssig verbunden sind, wobei der Kontakt (7, 8, 20, 21) und der Halbleiterbaustein (2, 3) jeweils einen Fügepartner für das Verbindungsmittel bilden, dadurch gekennzeichnet, dass das Verbindungsmittel zwischen dem Anschluss (4, 5, 6, 16) und dem Kontakt (7, 8, 20, 21) durch wenigstens zwei in ihrer flachen Erstreckung einander kontaktierenden Sinterschichten (9, 11, 12, 13, 16, 19, 23, 24, 25) gebildet ist, wobei ein thermischer Ausdehnungskoeffizient wenigstens einer der Sinterschichten (9, 11, 12, 13, 16, 19, 23, 24, 25) zwischen dem Ausdehnungskoeffizienten des Fügepartners (7, 8, 2, 3, 20, 21) und dem Ausdehnungskoeffizienten der zu der Sinterschicht (9, 11, 12, 13, 16, 19, 23, 24, 25) benachbarten Sinterschicht (9, 11, 12, 13, 16, 19, 23, 24, 25) liegt.
  2. Schaltungsträger (1, 10) nach Anspruch 1, dadurch gekennzeichnet, dass das Verbindungsmittel zwischen dem Anschluss (4, 5, 6, 16) und dem Kontakt (7, 8, 20, 21) durch wenigstens drei oder vier in ihrer flachen Erstreckung einander kontaktierenden Sinterschichten (9, 11, 12, 13, 16, 19, 23, 24, 25) gebildet ist, wobei ein thermischer Ausdehnungskoeffizient der Sinterschicht (9, 11, 12, 13, 16, 19, 23, 24, 25) zwischen den Ausdehnungskoeffizienten der zu der Sinterschicht (9, 11, 12, 13, 16, 19, 23, 24, 25) benachbarten Sinterschichten (9, 11, 12, 13, 16, 19, 23, 24, 25), beziehungsweise des Fügepartners (7, 8, 2) liegt.
  3. Schaltungsträger (1, 10) nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass der Ausdehnungskoeffizient des Halbleiterbausteins (2, 3) kleiner ist als der Ausdehnungskoeffizient des elektrischen Kontaktes (7, 8, 20, 21).
  4. Schaltungsträger (1, 10) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Halbleiterbaustein (2, 3) wenigstens zwei elektrische Anschlüsse (4, 5) aufweist, welche jeweils durch zueinander parallel erstreckende Flächenbereiche des Halbleiterbausteins gebildet sind, wobei ein Anschluss (4) über wenigstens zwei Sinterschichten (9, 13) durch den Kontakt (7) kontaktiert ist und der weitere Anschluss (5) über wenigstens zwei Sinterschichten (11, 12) durch einen mit einem Substrat (22) des Schaltungsträgers (1) verbundenen Kontakt (20, 21) oder einen durch das Substrat gebildeten Kontakt (8) kontaktiert ist.
  5. Schaltungsträger (1, 10) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass wenigstens eine Sinterschicht (9, 11, 12, 13, 16, 19, 23, 24, 25) durch eine Silberhaltige Schicht oder eine Silberschicht gebildet ist.
  6. Schaltungsträger (1, 10) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass wenigstens eine Sinterschicht (9, 11, 12, 13, 16, 19, 23, 24, 25) einen Füllstoff (14, 18) aufweist, welcher ausgebildet ist, beim Versintern einen Stoffschluss oder eine Legierung auszubilden.
  7. Schaltungsträger (1, 10) nach Anspruch 6, dadurch gekennzeichnet, dass der Füllstoff (14, 18) wenigstens ein Metall aus der Gruppe umfassend Eisen (14), Wolfram, Invar (18) und Kovar aufweist.
  8. Schaltungsträger (1, 10) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass wenigstens eine Sinterschicht (9, 11, 12, 13, 16, 19, 23, 24, 25) Füllpartikel (15) aufweist, welche ausgebildet sind, beim Versintern keine Legierung mit einem Sintermetall der Sinterschicht (9, 11, 12, 13, 16, 19, 23, 24, 25) auszubilden und in der gesinterten Schicht als Füllpartikel (15) erhalten zu bleiben, wobei ein Ausdehnungskoeffizient der Füllpartikel (15) sich von dem Ausdehnungskoeffizient des Sintermetalls unterscheidet.
  9. Schaltungsträger (1, 10) nach Anspruch 8, dadurch gekennzeichnet, dass die Füllpartikel (15) durch wenigstens ein Metalloxid, insbesondere Keramik gebildet sind.
  10. Schaltungsträger (1, 10) nach Anspruch 8, dadurch gekennzeichnet, dass die Füllpartikel (15) durch ein Halbleitermaterial, insbesondere Silizium gebildet sind.
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