DE102013223935A1 - Beleuchtungssystem für die EUV-Belichtungslithographie - Google Patents

Beleuchtungssystem für die EUV-Belichtungslithographie Download PDF

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Publication number
DE102013223935A1
DE102013223935A1 DE102013223935.1A DE102013223935A DE102013223935A1 DE 102013223935 A1 DE102013223935 A1 DE 102013223935A1 DE 102013223935 A DE102013223935 A DE 102013223935A DE 102013223935 A1 DE102013223935 A1 DE 102013223935A1
Authority
DE
Germany
Prior art keywords
euv
optics
mirror
mirrors
deflection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102013223935.1A
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German (de)
English (en)
Inventor
Michael Patra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to DE102013223935.1A priority Critical patent/DE102013223935A1/de
Priority to CN201480063956.4A priority patent/CN105765460B/zh
Priority to CN201811466330.4A priority patent/CN110068990B/zh
Priority to PCT/EP2014/075257 priority patent/WO2015078776A1/de
Priority to EP18205398.3A priority patent/EP3467590B1/de
Priority to KR1020217009708A priority patent/KR102380615B1/ko
Priority to KR1020167016530A priority patent/KR102413481B1/ko
Priority to JP2016533541A priority patent/JP6623156B2/ja
Priority to EP14802052.2A priority patent/EP3072015B1/de
Publication of DE102013223935A1 publication Critical patent/DE102013223935A1/de
Priority to US15/152,670 priority patent/US9958783B2/en
Priority to US15/945,879 priority patent/US10310381B2/en
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70183—Zoom systems for adjusting beam diameter
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
DE102013223935.1A 2013-11-22 2013-11-22 Beleuchtungssystem für die EUV-Belichtungslithographie Ceased DE102013223935A1 (de)

Priority Applications (11)

Application Number Priority Date Filing Date Title
DE102013223935.1A DE102013223935A1 (de) 2013-11-22 2013-11-22 Beleuchtungssystem für die EUV-Belichtungslithographie
KR1020217009708A KR102380615B1 (ko) 2013-11-22 2014-11-21 Euv 투영 리소그래피용 조명 시스템
CN201811466330.4A CN110068990B (zh) 2013-11-22 2014-11-21 Euv投射光刻的照明系统
PCT/EP2014/075257 WO2015078776A1 (de) 2013-11-22 2014-11-21 Beleuchtungssystem für die euv-projektionslithographie
EP18205398.3A EP3467590B1 (de) 2013-11-22 2014-11-21 Beleuchtungssystem für die euv-projektionslithographie
CN201480063956.4A CN105765460B (zh) 2013-11-22 2014-11-21 Euv投射光刻的照明系统
KR1020167016530A KR102413481B1 (ko) 2013-11-22 2014-11-21 Euv 투영 리소그래피용 조명 시스템
JP2016533541A JP6623156B2 (ja) 2013-11-22 2014-11-21 Ｅｕｖ投影リソグラフィのための照明系
EP14802052.2A EP3072015B1 (de) 2013-11-22 2014-11-21 Beleuchtungssystem für die euv-projektionslithographie
US15/152,670 US9958783B2 (en) 2013-11-22 2016-05-12 Illumination system for EUV projection lithography
US15/945,879 US10310381B2 (en) 2013-11-22 2018-04-05 Illumination system for EUV projection lithography

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102013223935.1A DE102013223935A1 (de) 2013-11-22 2013-11-22 Beleuchtungssystem für die EUV-Belichtungslithographie

Publications (1)

Publication Number Publication Date
DE102013223935A1 true DE102013223935A1 (de) 2015-05-28

Family

ID=51945892

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102013223935.1A Ceased DE102013223935A1 (de) 2013-11-22 2013-11-22 Beleuchtungssystem für die EUV-Belichtungslithographie

Country Status (7)

Country Link
US (2) US9958783B2 (https=)
EP (2) EP3072015B1 (https=)
JP (1) JP6623156B2 (https=)
KR (2) KR102380615B1 (https=)
CN (2) CN105765460B (https=)
DE (1) DE102013223935A1 (https=)
WO (1) WO2015078776A1 (https=)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015220955A1 (de) 2015-10-27 2015-12-17 Carl Zeiss Smt Gmbh Optisches Bauelement
DE102014221173A1 (de) 2014-10-17 2016-04-21 Carl Zeiss Smt Gmbh Strahlungsquellenmodul
DE102014226921A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Strahlungsquellenmodul
DE102014226920A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Optische Komponente
DE102014226918A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Optische Komponente
WO2017005912A2 (de) 2015-07-09 2017-01-12 Carl Zeiss Smt Gmbh Verfahren zur steuerung einer strahlführungsvorrichtung und strahlführungsvorrichtung
WO2017025376A1 (de) * 2015-08-10 2017-02-16 Carl Zeiss Smt Gmbh Optisches system
EP3141960A3 (de) * 2015-09-14 2017-05-31 M+W Group GmbH Fertigungsanlage zur herstellung von integrierten schaltkreisen aus halbleiter-wafern sowie waffelelement für eine fertigungsanlage
DE102016217426A1 (de) 2016-09-13 2017-08-24 Carl Zeiss Smt Gmbh Strahlteiler
DE102017210190A1 (de) 2017-06-19 2018-03-15 Carl Zeiss Smt Gmbh Optisches Element
US10288894B2 (en) 2014-12-23 2019-05-14 Carl Zeiss Smt Gmbh Optical component for use in a radiation source module of a projection exposure system
DE102018212224A1 (de) 2018-07-23 2020-01-23 Carl Zeiss Smt Gmbh Vorrichtung zur Rückkopplung von emittierter Strahlung in eine Laserquelle

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013223935A1 (de) 2013-11-22 2015-05-28 Carl Zeiss Smt Gmbh Beleuchtungssystem für die EUV-Belichtungslithographie
US11112618B2 (en) 2015-09-03 2021-09-07 Asml Netherlands B.V. Beam splitting apparatus
DE102017205548A1 (de) 2017-03-31 2018-10-04 Carl Zeiss Smt Gmbh Optische Baugruppe zum Führen eines Ausgabestrahls eines Freie-Elektronen-Lasers
CN107166180A (zh) * 2017-06-14 2017-09-15 杨毅 灯具
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
EP3627226A1 (en) * 2018-09-20 2020-03-25 ASML Netherlands B.V. Optical system, metrology apparatus and associated method

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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014221173A1 (de) 2014-10-17 2016-04-21 Carl Zeiss Smt Gmbh Strahlungsquellenmodul
WO2016058826A1 (en) 2014-10-17 2016-04-21 Carl Zeiss Smt Gmbh Radiation source module
US10288894B2 (en) 2014-12-23 2019-05-14 Carl Zeiss Smt Gmbh Optical component for use in a radiation source module of a projection exposure system
DE102014226921A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Strahlungsquellenmodul
DE102014226920A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Optische Komponente
DE102014226918A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Optische Komponente
WO2017005912A2 (de) 2015-07-09 2017-01-12 Carl Zeiss Smt Gmbh Verfahren zur steuerung einer strahlführungsvorrichtung und strahlführungsvorrichtung
DE102015212878A1 (de) 2015-07-09 2017-01-12 Carl Zeiss Smt Gmbh Strahlführungsvorrichtung
WO2017025376A1 (de) * 2015-08-10 2017-02-16 Carl Zeiss Smt Gmbh Optisches system
DE102015215216A1 (de) 2015-08-10 2017-02-16 Carl Zeiss Smt Gmbh Optisches System
EP3141960A3 (de) * 2015-09-14 2017-05-31 M+W Group GmbH Fertigungsanlage zur herstellung von integrierten schaltkreisen aus halbleiter-wafern sowie waffelelement für eine fertigungsanlage
DE102016211732A1 (de) 2015-10-27 2017-04-27 Carl Zeiss Smt Gmbh Optisches Bauelement
DE102015220955A1 (de) 2015-10-27 2015-12-17 Carl Zeiss Smt Gmbh Optisches Bauelement
DE102016217426A1 (de) 2016-09-13 2017-08-24 Carl Zeiss Smt Gmbh Strahlteiler
DE102017210190A1 (de) 2017-06-19 2018-03-15 Carl Zeiss Smt Gmbh Optisches Element
DE102018212224A1 (de) 2018-07-23 2020-01-23 Carl Zeiss Smt Gmbh Vorrichtung zur Rückkopplung von emittierter Strahlung in eine Laserquelle
WO2020020823A1 (de) 2018-07-23 2020-01-30 Carl Zeiss Smt Gmbh Strahlungsquelle und vorrichtung zur rückkopplung von emittierter strahlung in eine laserquelle
US11303092B2 (en) 2018-07-23 2022-04-12 Carl Zeiss Smt Gmbh Radiation source and device for feeding back emitted radiation to a laser source

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EP3467590A1 (de) 2019-04-10
JP2016537681A (ja) 2016-12-01
CN110068990A (zh) 2019-07-30
US20180224750A1 (en) 2018-08-09
JP6623156B2 (ja) 2019-12-18
CN105765460B (zh) 2018-12-28
EP3467590C0 (de) 2025-10-15
US20160252823A1 (en) 2016-09-01
CN110068990B (zh) 2021-12-28
KR102380615B1 (ko) 2022-03-30
US9958783B2 (en) 2018-05-01
KR20160088421A (ko) 2016-07-25
EP3467590B1 (de) 2025-10-15
WO2015078776A1 (de) 2015-06-04
KR20210039000A (ko) 2021-04-08
EP3072015B1 (de) 2019-01-02
EP3072015A1 (de) 2016-09-28
US10310381B2 (en) 2019-06-04
KR102413481B1 (ko) 2022-06-27

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