DE102013113048A1 - Heizvorrichtung für einen Suszeptor eines CVD-Reaktors - Google Patents

Heizvorrichtung für einen Suszeptor eines CVD-Reaktors Download PDF

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Publication number
DE102013113048A1
DE102013113048A1 DE102013113048.8A DE102013113048A DE102013113048A1 DE 102013113048 A1 DE102013113048 A1 DE 102013113048A1 DE 102013113048 A DE102013113048 A DE 102013113048A DE 102013113048 A1 DE102013113048 A1 DE 102013113048A1
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DE
Germany
Prior art keywords
heating
contact
elements
heating element
heating elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102013113048.8A
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German (de)
English (en)
Inventor
Pierre-Arnaud Bodin
Keith Allen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Priority to DE102013113048.8A priority Critical patent/DE102013113048A1/de
Priority to TW103115146A priority patent/TWI619839B/zh
Priority to TW103207353U priority patent/TWM495367U/zh
Priority to CN201410203173.3A priority patent/CN104674195B/zh
Priority to CN201420245938.5U priority patent/CN204162787U/zh
Publication of DE102013113048A1 publication Critical patent/DE102013113048A1/de
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Resistance Heating (AREA)
DE102013113048.8A 2013-11-26 2013-11-26 Heizvorrichtung für einen Suszeptor eines CVD-Reaktors Pending DE102013113048A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE102013113048.8A DE102013113048A1 (de) 2013-11-26 2013-11-26 Heizvorrichtung für einen Suszeptor eines CVD-Reaktors
TW103115146A TWI619839B (zh) 2013-11-26 2014-04-28 Heating device for the susceptor of the CVD reactor
TW103207353U TWM495367U (zh) 2013-11-26 2014-04-28 用於ｃｖｄ反應器之基座的加熱裝置
CN201410203173.3A CN104674195B (zh) 2013-11-26 2014-05-14 用于cvd反应器的基座的加热装置
CN201420245938.5U CN204162787U (zh) 2013-11-26 2014-05-14 用于加热cvd反应器的基座的设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102013113048.8A DE102013113048A1 (de) 2013-11-26 2013-11-26 Heizvorrichtung für einen Suszeptor eines CVD-Reaktors

Publications (1)

Publication Number Publication Date
DE102013113048A1 true DE102013113048A1 (de) 2015-05-28

Family

ID=52536496

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102013113048.8A Pending DE102013113048A1 (de) 2013-11-26 2013-11-26 Heizvorrichtung für einen Suszeptor eines CVD-Reaktors

Country Status (3)

Country Link
CN (2) CN104674195B (zh)
DE (1) DE102013113048A1 (zh)
TW (2) TWI619839B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014112645A1 (de) 2014-09-03 2016-03-03 Aixtron Se Heizeinrichtung
DE202016103834U1 (de) * 2016-07-15 2017-10-19 Aixtron Se Vorrichtung zum Beheizen eines Suszeptors eines CVD-Reaktors

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013113048A1 (de) * 2013-11-26 2015-05-28 Aixtron Se Heizvorrichtung für einen Suszeptor eines CVD-Reaktors
CN111910177B (zh) * 2019-05-08 2021-05-14 聚灿光电科技股份有限公司 金属有机化合物化学气相沉积反应装置
TWI711717B (zh) * 2019-11-06 2020-12-01 錼創顯示科技股份有限公司 加熱裝置及化學氣相沉積系統
US11542604B2 (en) 2019-11-06 2023-01-03 PlayNitride Display Co., Ltd. Heating apparatus and chemical vapor deposition system
TWI727907B (zh) * 2019-11-06 2021-05-11 錼創顯示科技股份有限公司 加熱裝置及化學氣相沉積系統
CN115182040B (zh) * 2022-05-11 2024-05-07 华灿光电(苏州）有限公司 提高生长效率的金属有机气相化学沉积设备及使用方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345498A (en) 1965-02-01 1967-10-03 Gen Motors Corp Infrared surface heating unit
DE2630466A1 (de) 1975-07-28 1977-02-10 Gould Inc Kochmulde fuer elektroherd
DE10329107A1 (de) 2002-12-23 2004-07-01 Mattson Thermal Products Gmbh Verfahren zum Bestimmen der Temperatur eines Halbleiterwafers in einer Schnellheizanlage
US20040149227A1 (en) * 2000-12-28 2004-08-05 Tetsuya Saito Substrate heating device and method of purging the device
US20050045618A1 (en) * 2001-07-09 2005-03-03 Ibiden Co., Ltd. Ceramic heater and ceramic joined article
DE102005056536A1 (de) 2005-11-28 2007-05-31 Aixtron Ag CVD-Reaktor mit widerstandsbeheiztem Suszeptor
DE102006018515A1 (de) 2006-04-21 2007-10-25 Aixtron Ag CVD-Reaktor mit absenkbarer Prozesskammerdecke
DE102007009145A1 (de) 2007-02-24 2008-08-28 Aixtron Ag Vorrichtung zum Abscheiden kristalliner Schichten wahlweise mittels MOCVD oder HVPE
DE102007027704A1 (de) 2007-06-15 2008-12-18 Aixtron Ag Vorrichtung zum Beschichten von auf einem Suszeptor angeordneten Substraten
US7573004B1 (en) 2006-02-21 2009-08-11 Structured Materials Inc. Filament support arrangement for substrate heating apparatus
DE102009043960A1 (de) 2009-09-08 2011-03-10 Aixtron Ag CVD-Reaktor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001039551A1 (fr) * 1999-11-19 2001-05-31 Ibiden Co., Ltd. Plaque chauffante en ceramique
JP2002026113A (ja) * 2000-07-10 2002-01-25 Toshiba Corp ホットプレート及び半導体装置の製造方法
JP2003133032A (ja) * 2001-10-26 2003-05-09 Tokai Konetsu Kogyo Co Ltd 円盤状ヒータ
US6807220B1 (en) * 2003-05-23 2004-10-19 Mrl Industries Retention mechanism for heating coil of high temperature diffusion furnace
CN202881385U (zh) * 2012-09-07 2013-04-17 富强半导体有限公司 晶圆加热装置
DE102013113048A1 (de) * 2013-11-26 2015-05-28 Aixtron Se Heizvorrichtung für einen Suszeptor eines CVD-Reaktors

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345498A (en) 1965-02-01 1967-10-03 Gen Motors Corp Infrared surface heating unit
DE2630466A1 (de) 1975-07-28 1977-02-10 Gould Inc Kochmulde fuer elektroherd
US20040149227A1 (en) * 2000-12-28 2004-08-05 Tetsuya Saito Substrate heating device and method of purging the device
US20050045618A1 (en) * 2001-07-09 2005-03-03 Ibiden Co., Ltd. Ceramic heater and ceramic joined article
DE10329107A1 (de) 2002-12-23 2004-07-01 Mattson Thermal Products Gmbh Verfahren zum Bestimmen der Temperatur eines Halbleiterwafers in einer Schnellheizanlage
DE102005056536A1 (de) 2005-11-28 2007-05-31 Aixtron Ag CVD-Reaktor mit widerstandsbeheiztem Suszeptor
US7573004B1 (en) 2006-02-21 2009-08-11 Structured Materials Inc. Filament support arrangement for substrate heating apparatus
DE102006018515A1 (de) 2006-04-21 2007-10-25 Aixtron Ag CVD-Reaktor mit absenkbarer Prozesskammerdecke
DE102007009145A1 (de) 2007-02-24 2008-08-28 Aixtron Ag Vorrichtung zum Abscheiden kristalliner Schichten wahlweise mittels MOCVD oder HVPE
DE102007027704A1 (de) 2007-06-15 2008-12-18 Aixtron Ag Vorrichtung zum Beschichten von auf einem Suszeptor angeordneten Substraten
DE102009043960A1 (de) 2009-09-08 2011-03-10 Aixtron Ag CVD-Reaktor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014112645A1 (de) 2014-09-03 2016-03-03 Aixtron Se Heizeinrichtung
DE202016103834U1 (de) * 2016-07-15 2017-10-19 Aixtron Se Vorrichtung zum Beheizen eines Suszeptors eines CVD-Reaktors

Also Published As

Publication number Publication date
CN104674195B (zh) 2018-10-19
CN204162787U (zh) 2015-02-18
TWI619839B (zh) 2018-04-01
TW201520366A (zh) 2015-06-01
CN104674195A (zh) 2015-06-03
TWM495367U (zh) 2015-02-11

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