DE102013112261B4 - Leistungshalbleiterschaltung - Google Patents

Leistungshalbleiterschaltung Download PDF

Info

Publication number
DE102013112261B4
DE102013112261B4 DE102013112261.2A DE102013112261A DE102013112261B4 DE 102013112261 B4 DE102013112261 B4 DE 102013112261B4 DE 102013112261 A DE102013112261 A DE 102013112261A DE 102013112261 B4 DE102013112261 B4 DE 102013112261B4
Authority
DE
Germany
Prior art keywords
resistance element
control
load current
power semiconductor
connection resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102013112261.2A
Other languages
German (de)
English (en)
Other versions
DE102013112261A1 (de
Inventor
Sven BÜTOW
Rainer Weiss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron Danfoss Elektronik GmbH and Co KG
Original Assignee
Semikron Elektronik GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Elektronik GmbH and Co KG filed Critical Semikron Elektronik GmbH and Co KG
Priority to DE102013112261.2A priority Critical patent/DE102013112261B4/de
Priority to EP20140186229 priority patent/EP2871776A1/de
Priority to IN3281MU2014 priority patent/IN2014MU03281A/en
Priority to JP2014220167A priority patent/JP2015091130A/ja
Priority to KR1020140150412A priority patent/KR20150053233A/ko
Priority to CN201410602630.6A priority patent/CN104639127A/zh
Priority to CN201420643090.1U priority patent/CN204190731U/zh
Priority to US14/535,546 priority patent/US20150123715A1/en
Publication of DE102013112261A1 publication Critical patent/DE102013112261A1/de
Application granted granted Critical
Publication of DE102013112261B4 publication Critical patent/DE102013112261B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
DE102013112261.2A 2013-11-07 2013-11-07 Leistungshalbleiterschaltung Active DE102013112261B4 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102013112261.2A DE102013112261B4 (de) 2013-11-07 2013-11-07 Leistungshalbleiterschaltung
EP20140186229 EP2871776A1 (de) 2013-11-07 2014-09-24 Leistungshalbleiterschaltung
IN3281MU2014 IN2014MU03281A (cg-RX-API-DMAC7.html) 2013-11-07 2014-10-14
JP2014220167A JP2015091130A (ja) 2013-11-07 2014-10-29 パワー半導体回路
KR1020140150412A KR20150053233A (ko) 2013-11-07 2014-10-31 전력 반도체 회로
CN201410602630.6A CN104639127A (zh) 2013-11-07 2014-10-31 大功率半导体电路
CN201420643090.1U CN204190731U (zh) 2013-11-07 2014-10-31 大功率半导体电路
US14/535,546 US20150123715A1 (en) 2013-11-07 2014-11-07 Power semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102013112261.2A DE102013112261B4 (de) 2013-11-07 2013-11-07 Leistungshalbleiterschaltung

Publications (2)

Publication Number Publication Date
DE102013112261A1 DE102013112261A1 (de) 2015-05-07
DE102013112261B4 true DE102013112261B4 (de) 2023-01-26

Family

ID=51625845

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102013112261.2A Active DE102013112261B4 (de) 2013-11-07 2013-11-07 Leistungshalbleiterschaltung

Country Status (7)

Country Link
US (1) US20150123715A1 (cg-RX-API-DMAC7.html)
EP (1) EP2871776A1 (cg-RX-API-DMAC7.html)
JP (1) JP2015091130A (cg-RX-API-DMAC7.html)
KR (1) KR20150053233A (cg-RX-API-DMAC7.html)
CN (2) CN104639127A (cg-RX-API-DMAC7.html)
DE (1) DE102013112261B4 (cg-RX-API-DMAC7.html)
IN (1) IN2014MU03281A (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015115253B4 (de) 2015-09-10 2020-09-17 Semikron Elektronik Gmbh & Co. Kg Steuereinrichtung und Verfahren zur Überwachung der elektrischen Energieversorgung einer Ansteuereinrichtung
DE102015223465A1 (de) 2015-11-26 2017-06-01 Robert Bosch Gmbh Schaltungsanordnung zur temperaturabhängigen Ansteuerung eines Schaltelementes
CN105699775B (zh) * 2016-03-18 2020-02-11 重庆大学 Igbt耦合热阻抗的离散化方波提取方法及装置
US10122357B2 (en) * 2016-11-14 2018-11-06 Ford Global Technologies, Llc Sensorless temperature compensation for power switching devices
WO2019225121A1 (ja) * 2018-05-23 2019-11-28 三菱電機株式会社 電力用半導体素子の保護回路およびパワーモジュール
KR102086519B1 (ko) * 2018-07-12 2020-03-09 엘지전자 주식회사 전력 변환 장치, 이를 포함하는 압축기 및 그 제어 방법
DE102018006054A1 (de) * 2018-08-01 2020-02-06 A.B. Mikroelektronik Gesellschaft Mit Beschränkter Haftung Vorrichtung zum zumindest teilweisen Entladen eines elektrischen Energiespeichers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153948A (en) 1998-08-13 2000-11-28 Cogan; Adrian I. Electronic circuits with wide dynamic range of on/off delay time
DE10361714A1 (de) 2003-12-30 2005-08-04 Infineon Technologies Ag Halbleiterbauelement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4024531B2 (ja) * 2001-12-18 2007-12-19 株式会社三社電機製作所 サーミスタ内蔵電力用半導体モジュール
JP4816182B2 (ja) * 2006-03-23 2011-11-16 株式会社日立製作所 スイッチング素子の駆動回路
JP2008042317A (ja) * 2006-08-02 2008-02-21 Denso Corp 駆動回路
JP5061998B2 (ja) * 2008-03-28 2012-10-31 株式会社デンソー スイッチング回路

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153948A (en) 1998-08-13 2000-11-28 Cogan; Adrian I. Electronic circuits with wide dynamic range of on/off delay time
DE10361714A1 (de) 2003-12-30 2005-08-04 Infineon Technologies Ag Halbleiterbauelement

Also Published As

Publication number Publication date
IN2014MU03281A (cg-RX-API-DMAC7.html) 2015-10-09
KR20150053233A (ko) 2015-05-15
US20150123715A1 (en) 2015-05-07
JP2015091130A (ja) 2015-05-11
DE102013112261A1 (de) 2015-05-07
CN204190731U (zh) 2015-03-04
EP2871776A1 (de) 2015-05-13
CN104639127A (zh) 2015-05-20

Similar Documents

Publication Publication Date Title
EP2871776A1 (de) Leistungshalbleiterschaltung
DE102017108305B4 (de) Leistungsumwandlungsgerät
DE102014102018B3 (de) Leistungshalbleitermodul mit niederinduktiv ausgestalteten modulinternen Last- und Hilfsverbindungseinrichtungen
DE102009049100B4 (de) Treiber zum Treiben einer elektronischen Vorrichtung
DE102007004006B4 (de) Gate-Treiberschaltung
DE102011011366B4 (de) Elektrische Heizung und Baueinheit hierfür
DE112018005978T5 (de) Halbleitervorrichtung
DE102013101857A1 (de) Halbleitermodul mit Schaltelementen
DE112015002272T5 (de) Sic leistungsmodule mit hohem strom und niedrigen schaltverlusten
DE102017105712B4 (de) Transistorbauelement
DE102017126584B4 (de) Sensorlose temperaturkompensation für leistungsschaltgeräte
DE112012006441T5 (de) Bipolartransistor vom Isolierschichttyp
EP3381127B1 (de) Schaltungsanordnung zur temperaturabhängigen ansteuerung eines schaltelementes
DE102012209284A1 (de) Halbleitervorrichtung
DE10056833A1 (de) Integriertes Hochspannungs-Halbleiterschaltungsplättchen
DE102014218551B4 (de) Verpolschutzschaltung für ein Kraftfahrzeug-Bordnetz und Kraftfahrzeug-Bordnetz
DE102017105713A1 (de) Transistorbauelement
EP2824837A1 (de) Leistungshalbleiterschaltung
CN109727978B (zh) 半导体器件和操作方法
DE102014008021A1 (de) Schaltungsanordnung zum thermischen Schutz eines Leistungshalbleiters
EP3236572A1 (de) Leistungselektronische schaltzelle sowie umrichterschaltung mit solchen schaltzellen
EP2704194B1 (de) Leistungshalbleitermodul und Verfahren zur Herstellung eines Leistungshalbleitermoduls
DE112024001733T5 (de) Ansteuerschaltung
DE102012205209B4 (de) Verfahren zur Ermittlung des Temperaturverlaufs eines auf einem Substrat angeordneten ersten Leistungshalbleiterschalters eines Leistungshalbleiterschaltermoduls und Leistungshalbleiterschaltermodul
DE102016216508A1 (de) Steuern eines Halbleiterschalters in einem Schaltbetrieb

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R081 Change of applicant/patentee

Owner name: SEMIKRON DANFOSS ELEKTRONIK GMBH & CO. KG, DE

Free format text: FORMER OWNER: SEMIKRON ELEKTRONIK GMBH & CO. KG, 90431 NUERNBERG, DE