DE102011113804A1 - Aufschlämmungszusammensetzung mit einstellbarer Dielektrikum-Polierselektivität und Verfahren zum Polieren eines Substrats - Google Patents

Aufschlämmungszusammensetzung mit einstellbarer Dielektrikum-Polierselektivität und Verfahren zum Polieren eines Substrats Download PDF

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Publication number
DE102011113804A1
DE102011113804A1 DE102011113804A DE102011113804A DE102011113804A1 DE 102011113804 A1 DE102011113804 A1 DE 102011113804A1 DE 102011113804 A DE102011113804 A DE 102011113804A DE 102011113804 A DE102011113804 A DE 102011113804A DE 102011113804 A1 DE102011113804 A1 DE 102011113804A1
Authority
DE
Germany
Prior art keywords
group
formula
mechanical polishing
anion
chemical mechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102011113804A
Other languages
German (de)
English (en)
Inventor
Zhendong Liu
Yi Guo
Kancharla-Arun Kumar Reddy
Guangyun Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of DE102011113804A1 publication Critical patent/DE102011113804A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE102011113804A 2010-09-22 2011-09-20 Aufschlämmungszusammensetzung mit einstellbarer Dielektrikum-Polierselektivität und Verfahren zum Polieren eines Substrats Withdrawn DE102011113804A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/887,963 2010-09-22
US12/887,963 US8513126B2 (en) 2010-09-22 2010-09-22 Slurry composition having tunable dielectric polishing selectivity and method of polishing a substrate

Publications (1)

Publication Number Publication Date
DE102011113804A1 true DE102011113804A1 (de) 2012-04-12

Family

ID=45789377

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011113804A Withdrawn DE102011113804A1 (de) 2010-09-22 2011-09-20 Aufschlämmungszusammensetzung mit einstellbarer Dielektrikum-Polierselektivität und Verfahren zum Polieren eines Substrats

Country Status (6)

Country Link
US (1) US8513126B2 (https=)
JP (1) JP6002983B2 (https=)
KR (1) KR101718814B1 (https=)
CN (1) CN102559063B (https=)
DE (1) DE102011113804A1 (https=)
FR (1) FR2964974B1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8232208B2 (en) 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8545715B1 (en) 2012-10-09 2013-10-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method
CN104650739A (zh) * 2013-11-22 2015-05-27 安集微电子（上海）有限公司 一种用于抛光二氧化硅基材的化学机械抛光液
US10508221B2 (en) * 2017-09-28 2019-12-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them
CN109149047A (zh) * 2018-08-27 2019-01-04 中国科学院上海光学精密机械研究所 一种片上低损耗超细脊状波导的制备方法
JP7408386B2 (ja) * 2018-12-28 2024-01-05 ニッタ・デュポン株式会社 研磨スラリー、及び、研磨スラリー用濃縮物
JP2020203980A (ja) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法
WO2021081145A1 (en) * 2019-10-22 2021-04-29 Cmc Materials, Inc. Polishing composition and method with high selectivity for silicon nitride and polysilicon over silicon oxide
EP4499765A1 (en) 2022-03-31 2025-02-05 Basf Se Compositions and methods for tungsten etching inhibition
WO2025088012A1 (en) 2023-10-26 2025-05-01 Basf Se Compositions and methods for removal of tungsten and dielectric layers
WO2025088005A1 (en) 2023-10-26 2025-05-01 Basf Se Compositions and methods for removal of tungsten and dielectric layers
TW202546159A (zh) 2024-04-19 2025-12-01 德商巴斯夫歐洲公司 用於拋光介電質的組成物和方法
TW202546160A (zh) 2024-04-19 2025-12-01 德商巴斯夫歐洲公司 用於拋光介電質的組成物和方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6626968B2 (en) 2000-05-22 2003-09-30 Samsung Electronics Co., Ltd. Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3490038B2 (ja) * 1999-12-28 2004-01-26 Ｎｅｃエレクトロニクス株式会社 金属配線形成方法
DE10022649B4 (de) * 2000-04-28 2008-06-19 Qimonda Ag Polierflüssigkeit und Verfahren zur Strukturierung von Metalloxiden
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US20070077865A1 (en) 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
US7842192B2 (en) 2006-02-08 2010-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-component barrier polishing solution
US20080220610A1 (en) 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
JP5322455B2 (ja) * 2007-02-26 2013-10-23 富士フイルム株式会社 研磨液及び研磨方法
KR20100014849A (ko) * 2007-02-27 2010-02-11 히다치 가세고교 가부시끼가이샤 실리콘막용 ｃｍｐ 슬러리
TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
JP5383164B2 (ja) * 2008-11-28 2014-01-08 富士フイルム株式会社 研磨液

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6626968B2 (en) 2000-05-22 2003-09-30 Samsung Electronics Co., Ltd. Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same

Also Published As

Publication number Publication date
JP2012094838A (ja) 2012-05-17
FR2964974A1 (fr) 2012-03-23
KR101718814B1 (ko) 2017-04-04
US20120070990A1 (en) 2012-03-22
JP6002983B2 (ja) 2016-10-05
FR2964974B1 (fr) 2017-12-08
US8513126B2 (en) 2013-08-20
CN102559063B (zh) 2014-06-11
CN102559063A (zh) 2012-07-11
KR20120031148A (ko) 2012-03-30

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R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: C09K0003140000

Ipc: C09G0001040000

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee