DE102011087105B4 - Verfahren zum Erzeugen einer Betriebsspannung in einem nichtflüchtigen Speicherelement und nichtflüchtiges Speicherelement - Google Patents

Verfahren zum Erzeugen einer Betriebsspannung in einem nichtflüchtigen Speicherelement und nichtflüchtiges Speicherelement Download PDF

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DE102011087105B4
DE102011087105B4 DE102011087105.5A DE102011087105A DE102011087105B4 DE 102011087105 B4 DE102011087105 B4 DE 102011087105B4 DE 102011087105 A DE102011087105 A DE 102011087105A DE 102011087105 B4 DE102011087105 B4 DE 102011087105B4
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memory cell
volatile memory
voltage
operating voltage
memory element
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DE102011087105A1 (de
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Yoon-hee Choi
Kitae PARK
BoGeun Kim
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects

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DE102011087105.5A 2010-11-25 2011-11-25 Verfahren zum Erzeugen einer Betriebsspannung in einem nichtflüchtigen Speicherelement und nichtflüchtiges Speicherelement Active DE102011087105B4 (de)

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KR10-2010-0117950 2010-11-25
KR1020100117950A KR101868332B1 (ko) 2010-11-25 2010-11-25 플래시 메모리 장치 및 그것을 포함한 데이터 저장 장치

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JP (1) JP6022153B2 (enExample)
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CN (1) CN102479550B (enExample)
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KR101868332B1 (ko) 2018-06-20
CN102479550A (zh) 2012-05-30
US8659966B2 (en) 2014-02-25
US9384840B2 (en) 2016-07-05
JP6022153B2 (ja) 2016-11-09
US20140169101A1 (en) 2014-06-19
JP2012113810A (ja) 2012-06-14
US20120134213A1 (en) 2012-05-31
DE102011087105A1 (de) 2012-06-06
CN102479550B (zh) 2017-05-03
KR20120056424A (ko) 2012-06-04

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