DE102011013978A1 - Verfahren zum Polieren eines Substrats, das Polysilizium und mindestens eines von Siliziumnitrid umfasst - Google Patents

Verfahren zum Polieren eines Substrats, das Polysilizium und mindestens eines von Siliziumnitrid umfasst Download PDF

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Publication number
DE102011013978A1
DE102011013978A1 DE102011013978.8A DE102011013978A DE102011013978A1 DE 102011013978 A1 DE102011013978 A1 DE 102011013978A1 DE 102011013978 A DE102011013978 A DE 102011013978A DE 102011013978 A1 DE102011013978 A1 DE 102011013978A1
Authority
DE
Germany
Prior art keywords
chemical mechanical
mechanical polishing
polysilicon
substrate
acyclic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102011013978.8A
Other languages
German (de)
English (en)
Inventor
Yi Guo
Zhendong Liu
Kancharla-Arun Kumar Reddy
Guangyun Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of DE102011013978A1 publication Critical patent/DE102011013978A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE102011013978.8A 2010-03-16 2011-03-15 Verfahren zum Polieren eines Substrats, das Polysilizium und mindestens eines von Siliziumnitrid umfasst Withdrawn DE102011013978A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/724,721 US8492277B2 (en) 2010-03-16 2010-03-16 Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
US12/724,721 2010-03-16

Publications (1)

Publication Number Publication Date
DE102011013978A1 true DE102011013978A1 (de) 2014-02-13

Family

ID=44558415

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011013978.8A Withdrawn DE102011013978A1 (de) 2010-03-16 2011-03-15 Verfahren zum Polieren eines Substrats, das Polysilizium und mindestens eines von Siliziumnitrid umfasst

Country Status (7)

Country Link
US (1) US8492277B2 (https=)
JP (2) JP2011192995A (https=)
KR (1) KR101737334B1 (https=)
CN (1) CN102201337B (https=)
DE (1) DE102011013978A1 (https=)
FR (1) FR2957547B1 (https=)
TW (1) TWI508154B (https=)

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US8491808B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride
US8496843B2 (en) * 2010-03-16 2013-07-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
CN104057615A (zh) * 2014-06-24 2014-09-24 王起 一种三维立体画压膜机
US11186748B2 (en) 2017-09-28 2021-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them
US10508221B2 (en) 2017-09-28 2019-12-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them
US10584265B2 (en) 2017-09-28 2020-03-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them
US10711158B2 (en) 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
CN109971356B (zh) 2017-12-27 2025-10-28 安集微电子（上海）有限公司 一种化学机械抛光液
JP7120846B2 (ja) * 2018-08-10 2022-08-17 株式会社フジミインコーポレーテッド 研磨用組成物及びその製造方法並びに研磨方法並びに基板の製造方法
CN118974189A (zh) 2022-03-31 2024-11-15 巴斯夫欧洲公司 用于抑制钨蚀刻的组合物和方法
WO2025088005A1 (en) 2023-10-26 2025-05-01 Basf Se Compositions and methods for removal of tungsten and dielectric layers
WO2025088012A1 (en) 2023-10-26 2025-05-01 Basf Se Compositions and methods for removal of tungsten and dielectric layers
TW202546159A (zh) 2024-04-19 2025-12-01 德商巴斯夫歐洲公司 用於拋光介電質的組成物和方法
TW202546160A (zh) 2024-04-19 2025-12-01 德商巴斯夫歐洲公司 用於拋光介電質的組成物和方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6626968B2 (en) 2000-05-22 2003-09-30 Samsung Electronics Co., Ltd. Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same

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US3457107A (en) * 1965-07-20 1969-07-22 Diversey Corp Method and composition for chemically polishing metals
US4283321A (en) 1979-10-03 1981-08-11 Gaf Corporation Alkyl aryl ethyleneoxy sulfonate surfactants for vinyl acetate polymerization
JP3265199B2 (ja) * 1996-09-30 2002-03-11 株式会社東芝 化学的機械研磨法、化学的機械研磨法に用いる研磨剤および半導体装置の製造方法
US6743683B2 (en) * 2001-12-04 2004-06-01 Intel Corporation Polysilicon opening polish
US7201647B2 (en) * 2002-06-07 2007-04-10 Praxair Technology, Inc. Subpad having robust, sealed edges
JP2008044103A (ja) * 2003-04-09 2008-02-28 Jsr Corp 研磨複層体および半導体ウエハの研磨方法
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
JP2005347737A (ja) * 2004-05-07 2005-12-15 Nissan Chem Ind Ltd シリコンウェハー用研磨組成物
KR100591719B1 (ko) * 2004-11-09 2006-06-22 삼성전자주식회사 에피텍셜 콘택 플러그 제조방법, 그 제조 방법을 이용한반도체 장치 제조 방법 및 그 제조 방법을 이용한 더블스택형 트랜지스터 제조 방법
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
US20060205218A1 (en) * 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
US20070077865A1 (en) 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
US8512593B2 (en) * 2005-11-04 2013-08-20 Cheil Industries, Inc. Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same
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US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
US20090032765A1 (en) * 2007-08-03 2009-02-05 Jinru Bian Selective barrier polishing slurry
US10144849B2 (en) * 2008-02-01 2018-12-04 Fujimi Incorporated Polishing composition and polishing method using the same
JP2009278061A (ja) * 2008-04-16 2009-11-26 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及び研磨方法
JP5441362B2 (ja) * 2008-05-30 2014-03-12 富士フイルム株式会社 研磨液及び研磨方法
JP5467804B2 (ja) * 2008-07-11 2014-04-09 富士フイルム株式会社 窒化ケイ素用研磨液及び研磨方法
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8491808B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride
US8496843B2 (en) * 2010-03-16 2013-07-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6626968B2 (en) 2000-05-22 2003-09-30 Samsung Electronics Co., Ltd. Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same

Also Published As

Publication number Publication date
US8492277B2 (en) 2013-07-23
KR20110104442A (ko) 2011-09-22
CN102201337B (zh) 2014-03-12
KR101737334B1 (ko) 2017-05-18
TWI508154B (zh) 2015-11-11
JP2011192995A (ja) 2011-09-29
TW201142933A (en) 2011-12-01
CN102201337A (zh) 2011-09-28
FR2957547A1 (fr) 2011-09-23
FR2957547B1 (fr) 2016-05-06
US20110230049A1 (en) 2011-09-22
JP6246263B2 (ja) 2017-12-13
JP2016157985A (ja) 2016-09-01

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