DE102011005184B4 - Leistungshalbleiterbauelement und dieses verwendendes Leistungsumformungssystem - Google Patents

Leistungshalbleiterbauelement und dieses verwendendes Leistungsumformungssystem Download PDF

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Publication number
DE102011005184B4
DE102011005184B4 DE102011005184.8A DE102011005184A DE102011005184B4 DE 102011005184 B4 DE102011005184 B4 DE 102011005184B4 DE 102011005184 A DE102011005184 A DE 102011005184A DE 102011005184 B4 DE102011005184 B4 DE 102011005184B4
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Prior art keywords
terminal
igbt
semiconductor module
power semiconductor
input terminal
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Active
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DE102011005184.8A
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German (de)
English (en)
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DE102011005184A1 (de
Inventor
Satoki Takizawa
Makoto Yatsu
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Fuji Electric Co Ltd
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Fuji Electric Holdings Ltd
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Publication of DE102011005184A1 publication Critical patent/DE102011005184A1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
DE102011005184.8A 2010-04-06 2011-03-07 Leistungshalbleiterbauelement und dieses verwendendes Leistungsumformungssystem Active DE102011005184B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010087471A JP5494147B2 (ja) 2010-04-06 2010-04-06 パワー半導体モジュール及びそれを用いた電力変換装置
JP2010-087471 2010-04-06

Publications (2)

Publication Number Publication Date
DE102011005184A1 DE102011005184A1 (de) 2011-11-03
DE102011005184B4 true DE102011005184B4 (de) 2025-06-05

Family

ID=44709495

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DE102011005184.8A Active DE102011005184B4 (de) 2010-04-06 2011-03-07 Leistungshalbleiterbauelement und dieses verwendendes Leistungsumformungssystem

Country Status (4)

Country Link
US (1) US8901602B2 (enExample)
JP (1) JP5494147B2 (enExample)
CN (1) CN102214644B (enExample)
DE (1) DE102011005184B4 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5493532B2 (ja) * 2009-07-17 2014-05-14 富士電機株式会社 負荷駆動装置及びこれを使用した電気自動車
JP5724314B2 (ja) * 2010-11-16 2015-05-27 富士電機株式会社 パワー半導体モジュール
US20140362626A1 (en) * 2011-12-28 2014-12-11 Panasonic Corporation Multilevel inverter device
JP5891940B2 (ja) * 2012-05-17 2016-03-23 富士電機株式会社 ３レベルユニットインバータ
CN103904928A (zh) * 2014-04-23 2014-07-02 西华大学 一种串并联混合三电平npp逆变拓扑单元及三电平逆变器
CN105226975B (zh) * 2014-06-06 2017-12-15 台达电子企业管理（上海）有限公司 Tnpc逆变器装置及其桥臂短路检测方法
WO2016031295A1 (ja) * 2014-08-26 2016-03-03 富士電機株式会社 ３レベル電力変換装置
JP6304017B2 (ja) * 2014-12-18 2018-04-04 三菱電機株式会社 半導体装置
US10727213B2 (en) 2016-09-23 2020-07-28 Mitsubishi Electric Corporation Power semiconductor module and power semiconductor device
CN109073705B (zh) * 2016-11-16 2021-03-23 富士电机株式会社 半导体测试电路、半导体测试装置和半导体测试方法
JP2018107857A (ja) * 2016-12-22 2018-07-05 富士電機株式会社 電力変換装置
JP2019180114A (ja) * 2018-03-30 2019-10-17 本田技研工業株式会社 電力変換装置および電力変換装置用コンデンサ
CN108551159B (zh) * 2018-04-08 2019-06-11 科华恒盛股份有限公司 逆阻型igbt短路保护电路、方法及系统和存储介质
JP7039430B2 (ja) * 2018-09-19 2022-03-22 株式会社東芝 Ａｃ／ｄｃコンバータ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008193779A (ja) * 2007-02-02 2008-08-21 Fuji Electric Systems Co Ltd 半導体モジュール
US20090251858A1 (en) * 2003-08-21 2009-10-08 Denso Corporation Electric power converter and mounting structure of semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3263317B2 (ja) 1996-06-18 2002-03-04 株式会社東芝 スイッチングモジュールおよびモジュールを用いた電力変換器
CN1242604A (zh) * 1998-06-26 2000-01-26 株式会社东芝 半导体保护器件和功率转换器件
JP2000216331A (ja) 1999-01-25 2000-08-04 Mitsubishi Electric Corp パワ―半導体モジュ―ルおよびそれを用いた電力変換装置
JP3873743B2 (ja) * 1999-10-27 2007-01-24 株式会社日立製作所 電力変換装置
JP2002026251A (ja) 2000-07-11 2002-01-25 Toshiba Corp 半導体装置
JP2002231883A (ja) 2001-01-31 2002-08-16 Hitachi Ltd パワー半導体モジュールおよびそれを用いた電力変換装置
JP2003018854A (ja) 2001-07-02 2003-01-17 Honda Motor Co Ltd 共振形インバータ装置
US6838925B1 (en) * 2003-10-07 2005-01-04 American Power Conversion Corporation Three level inverter
US7289329B2 (en) * 2004-06-04 2007-10-30 Siemens Vdo Automotive Corporation Integration of planar transformer and/or planar inductor with power switches in power converter
JP4728718B2 (ja) * 2005-07-15 2011-07-20 ローム株式会社 昇圧型スイッチングレギュレータおよびその制御回路ならびにそれを用いた電子機器
JP2009022062A (ja) * 2007-07-10 2009-01-29 Fuji Electric Systems Co Ltd ３レベル電力変換回路の配線構造
JP5440335B2 (ja) * 2010-04-06 2014-03-12 富士電機株式会社 パワー半導体モジュール及びそれを用いた電力変換装置
JP2012029429A (ja) * 2010-07-22 2012-02-09 Fuji Electric Co Ltd ３レベル電力変換装置
JP5724314B2 (ja) * 2010-11-16 2015-05-27 富士電機株式会社 パワー半導体モジュール

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090251858A1 (en) * 2003-08-21 2009-10-08 Denso Corporation Electric power converter and mounting structure of semiconductor device
JP2008193779A (ja) * 2007-02-02 2008-08-21 Fuji Electric Systems Co Ltd 半導体モジュール
US20100039843A1 (en) * 2007-02-02 2010-02-18 Fuji Electric Systems Co., Ltd Semiconductor module for use in power supply

Also Published As

Publication number Publication date
CN102214644B (zh) 2015-02-25
US20110242860A1 (en) 2011-10-06
CN102214644A (zh) 2011-10-12
DE102011005184A1 (de) 2011-11-03
JP5494147B2 (ja) 2014-05-14
JP2011223666A (ja) 2011-11-04
US8901602B2 (en) 2014-12-02

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