DE102009003673B4 - Elektronenquelle auf der Basis von Feldemittern mit minimierten Strahl-Emittanzwachstum - Google Patents

Elektronenquelle auf der Basis von Feldemittern mit minimierten Strahl-Emittanzwachstum Download PDF

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Publication number
DE102009003673B4
DE102009003673B4 DE102009003673.3A DE102009003673A DE102009003673B4 DE 102009003673 B4 DE102009003673 B4 DE 102009003673B4 DE 102009003673 A DE102009003673 A DE 102009003673A DE 102009003673 B4 DE102009003673 B4 DE 102009003673B4
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Prior art keywords
electron beam
grid
ece
voltage
extraction
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Expired - Fee Related
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DE102009003673.3A
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German (de)
English (en)
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DE102009003673A1 (de
Inventor
Yun Zou
Yang Cao
Louis Paul Inzinna
Vasile Bogdan Neculaes
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General Electric Co
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General Electric Co
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00X-ray tubes
    • H01J35/02Details
    • H01J35/04Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/06Cathodes
    • H01J35/065Field emission, photo emission or secondary emission cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00X-ray tubes
    • H01J2235/06Cathode assembly
    • H01J2235/062Cold cathodes

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  • X-Ray Techniques (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
DE102009003673.3A 2008-03-26 2009-03-25 Elektronenquelle auf der Basis von Feldemittern mit minimierten Strahl-Emittanzwachstum Expired - Fee Related DE102009003673B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/055,536 2008-03-26
US12/055,536 US7801277B2 (en) 2008-03-26 2008-03-26 Field emitter based electron source with minimized beam emittance growth

Publications (2)

Publication Number Publication Date
DE102009003673A1 DE102009003673A1 (de) 2009-10-01
DE102009003673B4 true DE102009003673B4 (de) 2014-02-20

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DE102009003673.3A Expired - Fee Related DE102009003673B4 (de) 2008-03-26 2009-03-25 Elektronenquelle auf der Basis von Feldemittern mit minimierten Strahl-Emittanzwachstum

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US (1) US7801277B2 (enExample)
JP (1) JP4590479B2 (enExample)
DE (1) DE102009003673B4 (enExample)

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US7801277B2 (en) 2010-09-21
JP4590479B2 (ja) 2010-12-01
US20090245468A1 (en) 2009-10-01
JP2009238750A (ja) 2009-10-15
DE102009003673A1 (de) 2009-10-01

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