JP4590479B2 - ビーム・エミッタンス増大を最小限にした電界エミッタ利用電子源 - Google Patents
ビーム・エミッタンス増大を最小限にした電界エミッタ利用電子源 Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/06—Cathodes
- H01J35/065—Field emission, photo emission or secondary emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2235/00—X-ray tubes
- H01J2235/06—Cathode assembly
- H01J2235/062—Cold cathodes
Landscapes
- X-Ray Techniques (AREA)
- Cold Cathode And The Manufacture (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Description
11 電界エミッタ装置
12 基板層
14 誘電体フィルム
16 絶縁層
18 開口
20 引出し電極
21 制御装置
22 空洞
24 開口
26 電子エミッタ素子
28 電子ビーム
32 網状格子
33 間隙
34 エミッタンス補償電極(ECE)
36 開口
38 角度の付いた表面
40 二次格子
42 開口
44 開口
50 炭素ナノチューブ(CNT)
52 CNTグループ
54 制御装置
56 集束電極
58 開口
60 焦点スポット
62 ターゲット陽極
64 スペーサ素子
140 X線管
144 陽極組立体
148 電子源
150 支持構造
152 電界エミッタ装置
154 回転陽極円板
156 陽極遮蔽体
158 回転子
160 X線ビーム
162 一次電子流
210 コンピュータ断層撮影(CT)イメージング・システム
212 ガントリ
214 X線源
216 X線ビーム
218 コリメータ
220 検出器
222 患者
224 回転中心
226 制御機構
232 データ取得システム(DAS)
242 表示装置
248 ガントリ開口
Claims (10)
- 電子ビーム(28)を発生するように構成されているエミッタ素子(26)と、
前記エミッタ素子(26)に隣接して配置されて、そこから電子ビーム(28)を引き出す引出し電極(20)であって、それを貫通する開口(24)を含んでいる引出し電極(20)と、
前記引出し電極(20)の前記開口(24)の中に配置されて、前記エミッタ素子(26)の表面の電界の強度及び一様性を増強する網状格子(32)と、
前記網状格子(32)の前記エミッタ素子(26)側とは反対の側で前記網状格子(32)に隣接して配置されて、電子ビーム(28)のエミッタンス増大を制御するように構成されているエミッタンス補償電極(ECE)(34)と、
制御装置(21,54)と、
を有し、
前記制御装置(21,54)は、
前記電子ビーム(28)に所望の電流密度が発生するように前記引出し電極(20)に印加される電圧を生じさせ、
前記電子ビーム(28)のエミッタンス増大を最小限にする、前記ECE(34)に印加される電圧を前記引出し電極(20)に印加される電圧に基づいて決定し、
前記網状格子(32)の両側に存在する電界が互いに等しくなるように前記ECE(34)に印加される前記決定された電圧を生じさせるように構成されている、電子銃(10)。 - 前記ECE(34)は、電子ビーム(28)が該ECE(34)を通過できるようにする開口(36)を含んでいる、請求項1記載の電子銃(10)。
- 前記開口(36)は角度の付いた開口(38)を有している、請求項2記載の電子銃(10)。
- 前記ECE(34)は更に、前記開口(36)内に配置された二次格子(40)を有しており、前記二次格子(40)はその中に、電子ビーム(28)の通路に沿って前記網状格子(32)内の開口(44)と整列する複数の開口(42)を含んでいる、請求項2記載の電子銃(10)。
- 前記制御装置(54)は、前記引出し電極(20)に可変の電圧が印加されたとき電子ビーム(28)のエミッタンス増大が変化するように、前記ECE(34)に一定の電圧を印加するように構成されている、請求項1記載の電子銃(10)。
- 更に、前記ECE(34)を通過した後の電子ビーム(28)を受け取るように配置されていて、電子ビーム(28)を集束してターゲット陽極(62)上に焦点スポット(60)を形成するように構成されている集束電極(56)を含んでいる請求項1記載の電子銃(10)。
- 前記集束電極(56)は、電子ビーム(28)の断面積を圧縮するように構成されている、請求項6記載の電子銃(10)。
- 前記制御装置(21,54)は、前記電子ビーム(28)内の電子が横断方向において圧縮され、ほぼ同じモーメントを持つように前記ECE(34)に印加される前記決定された電圧を生じさせるように構成されている、請求項1記載の電子銃(10)。
- X線源用の陰極組立体であって、
基板と、
該基板に隣接して配置されていて、中に網状格子を配置した開口を持つ引出し素子と、
前記基板と前記引出し素子との間の絶縁層であって、該絶縁層が前記引出し素子内の前記開口と概ね整列した空洞を持つ前記絶縁層と、
前記絶縁層の前記空洞内に配置され、放出電圧が前記引出し素子に印加されているときに電子ビームを放出するように構成されている電界エミッタ素子と、
前記引出し素子の下流に配置されていて、空間及びモーメント位相空間内で電子ビームを圧縮するように構成されているエミッタンス補償電極(ECE)と、
制御装置と、
を有し、
前記制御装置は、
前記引出し素子に印加される前記放出電圧を制御し、
前記ECEに印加される圧縮電圧を制御して前記電子ビームの圧縮を変化させるように構成され、
前記ECEに印加される前記圧縮電圧は、前記引出し素子に印加される前記放出電圧に関連し、
前記ECEに印加される前記圧縮電圧は、前記制御装置に制御されて、前記電子ビームのエミッタンス増大を最小限にするように、空間及びモーメント位相空間内で前記電子ビームを圧縮する、陰極組立体。 - 多重スポットX線源であって、
少なくとも1つの電子ビームを発生するように構成されている複数の電界エミッタ装置と、
前記少なくとも1つの電子ビームの通路内に配置されていて、前記電子ビームが衝突したときにCTイメージング処理に使用するための高周波電磁エネルギのビームを放出するように構成されているターゲット陽極と、
を含み、
前記複数の電界エミッタ装置の各々は、複数の炭素ナノチューブ(CNT)グループを有するCNTエミッタ素子と、
前記CNTエミッタ素子から前記電子ビームを引き出すためのゲート電極とを含み、
前記ゲート電極は前記電子ビーム通路内に配置された網状格子を含み、
前記複数のCNTグループの各々が前記網状格子の対応する開口に整列し、
前記複数の電界エミッタ装置の各々は、更に、前記エミッタ素子から前記電子ビームを受け取って、該電子ビームを集束して前記ターゲット陽極上に焦点スポットを形成するように配置された集束素子と、前記網状格子と前記集束素子との間に配置されていて、電子ビーム・エミッタンス増大を制御するように構成されているエミッタンス補償電極(ECE)とを含む、多重スポットX線源。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US12/055,536 US7801277B2 (en) | 2008-03-26 | 2008-03-26 | Field emitter based electron source with minimized beam emittance growth |
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JP2009238750A JP2009238750A (ja) | 2009-10-15 |
JP2009238750A5 JP2009238750A5 (ja) | 2010-08-19 |
JP4590479B2 true JP4590479B2 (ja) | 2010-12-01 |
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US (1) | US7801277B2 (ja) |
JP (1) | JP4590479B2 (ja) |
DE (1) | DE102009003673B4 (ja) |
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US7801277B2 (en) | 2010-09-21 |
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US20090245468A1 (en) | 2009-10-01 |
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