DE102008006987A1 - Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers - Google Patents

Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers Download PDF

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Publication number
DE102008006987A1
DE102008006987A1 DE102008006987A DE102008006987A DE102008006987A1 DE 102008006987 A1 DE102008006987 A1 DE 102008006987A1 DE 102008006987 A DE102008006987 A DE 102008006987A DE 102008006987 A DE102008006987 A DE 102008006987A DE 102008006987 A1 DE102008006987 A1 DE 102008006987A1
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DE
Germany
Prior art keywords
active
area
radiation receiver
radiation
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102008006987A
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German (de)
English (en)
Inventor
Rainer Dr. Butendeich
Reiner Dr. Windisch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102008006987A priority Critical patent/DE102008006987A1/de
Priority to CN2008801259321A priority patent/CN101933142B/zh
Priority to KR1020107019154A priority patent/KR20100109563A/ko
Priority to PCT/DE2008/002126 priority patent/WO2009094966A2/de
Priority to EP08871711.1A priority patent/EP2238624B1/de
Priority to US12/746,121 priority patent/US8659107B2/en
Priority to JP2010544569A priority patent/JP2011511443A/ja
Priority to TW098101515A priority patent/TWI396293B/zh
Publication of DE102008006987A1 publication Critical patent/DE102008006987A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Light Receiving Elements (AREA)
DE102008006987A 2008-01-31 2008-01-31 Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers Withdrawn DE102008006987A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102008006987A DE102008006987A1 (de) 2008-01-31 2008-01-31 Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
CN2008801259321A CN101933142B (zh) 2008-01-31 2008-12-17 辐射接收器和用于制造辐射接收器的方法
KR1020107019154A KR20100109563A (ko) 2008-01-31 2008-12-17 복사 수신기 및 복사 수신기의 제조 방법
PCT/DE2008/002126 WO2009094966A2 (de) 2008-01-31 2008-12-17 Strahlungsempfänger und verfahren zur herstellung eines strahlungsempfängers
EP08871711.1A EP2238624B1 (de) 2008-01-31 2008-12-17 Strahlungsempfänger und verfahren zur herstellung eines strahlungsempfängers
US12/746,121 US8659107B2 (en) 2008-01-31 2008-12-17 Radiation receiver and method of producing a radiation receiver
JP2010544569A JP2011511443A (ja) 2008-01-31 2008-12-17 放射受光器およびその製造方法
TW098101515A TWI396293B (zh) 2008-01-31 2009-01-16 輻射接收器及其製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008006987A DE102008006987A1 (de) 2008-01-31 2008-01-31 Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers

Publications (1)

Publication Number Publication Date
DE102008006987A1 true DE102008006987A1 (de) 2009-08-06

Family

ID=40719994

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008006987A Withdrawn DE102008006987A1 (de) 2008-01-31 2008-01-31 Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers

Country Status (8)

Country Link
US (1) US8659107B2 (https=)
EP (1) EP2238624B1 (https=)
JP (1) JP2011511443A (https=)
KR (1) KR20100109563A (https=)
CN (1) CN101933142B (https=)
DE (1) DE102008006987A1 (https=)
TW (1) TWI396293B (https=)
WO (1) WO2009094966A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009094966A2 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Strahlungsempfänger und verfahren zur herstellung eines strahlungsempfängers

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US8816461B2 (en) * 2011-09-13 2014-08-26 The Boeing Company Dichromatic photodiodes
JP2013120880A (ja) * 2011-12-08 2013-06-17 Technical Research & Development Institute Ministry Of Defence 光検知素子及び光検知素子の製造方法
KR101456376B1 (ko) 2013-04-24 2014-10-31 한국과학기술원 조립식 왕복 지지체를 가지는 진공 단열체의 구조
CN103247638B (zh) * 2013-04-27 2015-08-05 中国科学院苏州纳米技术与纳米仿生研究所 红外探测器及其制作方法
US11158754B1 (en) * 2013-08-09 2021-10-26 Hrl Laboratories, Llc Back-to-back dual band p-CB-n
WO2016069960A1 (en) * 2014-10-29 2016-05-06 Digital Direct Ir Inc. Spherical detector arrays implemented using passive detector structures for thermal imaging applications
DE102015013514B4 (de) * 2015-10-20 2024-04-18 Azur Space Solar Power Gmbh Optischer Empfängerbaustein
US10964862B2 (en) * 2016-09-30 2021-03-30 Sensor Electronic Technology, Inc. Semiconductor heterostructure with multiple active regions
DE102018111319A1 (de) * 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP7243071B2 (ja) 2018-08-01 2023-03-22 富士通株式会社 赤外線検出器及びこれを用いた赤外線撮像装置

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US4820915A (en) * 1986-10-08 1989-04-11 Yamatake-Honeywell Co., Ltd. Color sensor with amorphous pin structure
US5552603A (en) * 1994-09-15 1996-09-03 Martin Marietta Corporation Bias and readout for multicolor quantum well detectors
US6184538B1 (en) * 1997-10-16 2001-02-06 California Institute Of Technology Dual-band quantum-well infrared sensing array having commonly biased contact layers
WO2003073517A1 (en) * 2002-02-27 2003-09-04 Midwest Research Institute Monolithic photovoltaic energy conversion device
WO2005079443A2 (en) * 2004-02-18 2005-09-01 Bae Systems Information And Electronic Systems Integration Inc Qwip with tunable spectral response

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US4820915A (en) * 1986-10-08 1989-04-11 Yamatake-Honeywell Co., Ltd. Color sensor with amorphous pin structure
US5552603A (en) * 1994-09-15 1996-09-03 Martin Marietta Corporation Bias and readout for multicolor quantum well detectors
US6184538B1 (en) * 1997-10-16 2001-02-06 California Institute Of Technology Dual-band quantum-well infrared sensing array having commonly biased contact layers
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009094966A2 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Strahlungsempfänger und verfahren zur herstellung eines strahlungsempfängers

Also Published As

Publication number Publication date
KR20100109563A (ko) 2010-10-08
CN101933142B (zh) 2012-08-29
EP2238624A2 (de) 2010-10-13
WO2009094966A3 (de) 2009-10-08
JP2011511443A (ja) 2011-04-07
TW200941751A (en) 2009-10-01
CN101933142A (zh) 2010-12-29
US20100258892A1 (en) 2010-10-14
TWI396293B (zh) 2013-05-11
WO2009094966A2 (de) 2009-08-06
US8659107B2 (en) 2014-02-25
EP2238624B1 (de) 2013-06-05

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Effective date: 20140801