DE102007049799A1 - Optoelektronisches Bauelement - Google Patents
Optoelektronisches Bauelement Download PDFInfo
- Publication number
- DE102007049799A1 DE102007049799A1 DE102007049799A DE102007049799A DE102007049799A1 DE 102007049799 A1 DE102007049799 A1 DE 102007049799A1 DE 102007049799 A DE102007049799 A DE 102007049799A DE 102007049799 A DE102007049799 A DE 102007049799A DE 102007049799 A1 DE102007049799 A1 DE 102007049799A1
- Authority
- DE
- Germany
- Prior art keywords
- optoelectronic component
- component according
- radiation
- wavelength
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 110
- 239000004065 semiconductor Substances 0.000 claims abstract description 114
- 230000005855 radiation Effects 0.000 claims abstract description 87
- 238000006243 chemical reaction Methods 0.000 claims abstract description 58
- 239000000126 substance Substances 0.000 claims abstract description 29
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 9
- 238000000465 moulding Methods 0.000 claims description 34
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 25
- 150000002910 rare earth metals Chemical class 0.000 claims description 23
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229920001296 polysiloxane Polymers 0.000 claims description 8
- 230000003595 spectral effect Effects 0.000 claims description 8
- 239000011230 binding agent Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- -1 alkaline earth metal sulfides Chemical class 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 4
- 150000004645 aluminates Chemical class 0.000 claims description 3
- GTDCAOYDHVNFCP-UHFFFAOYSA-N chloro(trihydroxy)silane Chemical class O[Si](O)(O)Cl GTDCAOYDHVNFCP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052605 nesosilicate Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 150000004762 orthosilicates Chemical class 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 43
- 238000010168 coupling process Methods 0.000 abstract description 43
- 238000005859 coupling reaction Methods 0.000 abstract description 43
- 230000003287 optical effect Effects 0.000 description 15
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 239000011521 glass Substances 0.000 description 6
- 230000005484 gravity Effects 0.000 description 5
- 238000004382 potting Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000001962 electrophoresis Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 150000003568 thioethers Chemical class 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100128278 Mus musculus Lins1 gene Proteins 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
Landscapes
- Led Device Packages (AREA)
- Photovoltaic Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007049799A DE102007049799A1 (de) | 2007-09-28 | 2007-10-17 | Optoelektronisches Bauelement |
| KR1020107008650A KR20100061562A (ko) | 2007-09-28 | 2008-09-10 | 광전 소자 |
| EP08801318A EP2193552A1 (de) | 2007-09-28 | 2008-09-10 | Optoelektronisches bauelement |
| US12/680,637 US8624289B2 (en) | 2007-09-28 | 2008-09-10 | Optoelectronic component |
| PCT/DE2008/001514 WO2009039826A1 (de) | 2007-09-28 | 2008-09-10 | Optoelektronisches bauelement |
| CN2008801088845A CN101809765B (zh) | 2007-09-28 | 2008-09-10 | 光电子器件 |
| JP2010526155A JP2010541220A (ja) | 2007-09-28 | 2008-09-10 | オプトエレクトロニクスデバイス |
| TW097135863A TWI419361B (zh) | 2007-09-28 | 2008-09-18 | 光電元件 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007046699 | 2007-09-28 | ||
| DE102007046699.6 | 2007-09-28 | ||
| DE102007049799A DE102007049799A1 (de) | 2007-09-28 | 2007-10-17 | Optoelektronisches Bauelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102007049799A1 true DE102007049799A1 (de) | 2009-04-02 |
Family
ID=40384457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102007049799A Withdrawn DE102007049799A1 (de) | 2007-09-28 | 2007-10-17 | Optoelektronisches Bauelement |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8624289B2 (https=) |
| EP (1) | EP2193552A1 (https=) |
| JP (1) | JP2010541220A (https=) |
| KR (1) | KR20100061562A (https=) |
| CN (1) | CN101809765B (https=) |
| DE (1) | DE102007049799A1 (https=) |
| TW (1) | TWI419361B (https=) |
| WO (1) | WO2009039826A1 (https=) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008045331A1 (de) | 2008-09-01 | 2010-03-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| DE102008057140A1 (de) | 2008-11-13 | 2010-05-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| CN102986032A (zh) * | 2010-06-17 | 2013-03-20 | 邱罗利士公司 | 发光结构及其制法 |
| JP2015149468A (ja) * | 2014-02-05 | 2015-08-20 | 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． | 発光ダイオードパッケージ及びその製造方法 |
| CN108255545A (zh) * | 2016-12-28 | 2018-07-06 | 阿里巴巴集团控股有限公司 | 组件间的功能调用方法、装置及组件化架构系统 |
| WO2019161895A1 (en) * | 2018-02-21 | 2019-08-29 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic component |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101578714B (zh) | 2007-08-03 | 2011-02-09 | 松下电器产业株式会社 | 发光装置 |
| DE102007044146A1 (de) | 2007-09-12 | 2009-03-19 | Bayer Materialscience Ag | Thermoplast mit Metallkennzeichnungsplättchen |
| JP5512515B2 (ja) | 2008-05-30 | 2014-06-04 | シャープ株式会社 | 発光装置、面光源および液晶表示装置 |
| US10422503B2 (en) | 2009-10-30 | 2019-09-24 | Ideal Industries Lighting Llc | One-piece multi-lens optical member and method of manufacture |
| JP5451534B2 (ja) * | 2010-06-07 | 2014-03-26 | 株式会社東芝 | 半導体発光装置および半導体発光装置の製造方法 |
| KR101689163B1 (ko) * | 2010-07-08 | 2016-12-23 | 엘지이노텍 주식회사 | 발광소자 패키지 |
| US8835199B2 (en) * | 2010-07-28 | 2014-09-16 | GE Lighting Solutions, LLC | Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration |
| TWI529348B (zh) * | 2011-03-07 | 2016-04-11 | 皇家飛利浦電子股份有限公司 | 發光模組、燈、燈具及顯示裝置 |
| JP2013021136A (ja) * | 2011-07-11 | 2013-01-31 | Sharp Corp | 発光装置および表示装置 |
| KR101859653B1 (ko) * | 2011-08-30 | 2018-05-18 | 삼성전자주식회사 | 액정 디스플레이 장치용 발광 유닛 및 그를 구비한 액정 디스플레이 장치 |
| US8492746B2 (en) | 2011-09-12 | 2013-07-23 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (LED) dice having wavelength conversion layers |
| EP2783398B1 (en) | 2011-11-23 | 2017-10-04 | Quarkstar LLC | Light-emitting devices providing asymmetrical propagation of light |
| JP2013135084A (ja) * | 2011-12-26 | 2013-07-08 | Nitto Denko Corp | 発光ダイオード装置の製造方法 |
| CN103375708B (zh) * | 2012-04-26 | 2015-10-28 | 展晶科技(深圳)有限公司 | 发光二极管灯源装置 |
| CN103489997B (zh) * | 2012-06-09 | 2016-02-03 | 王树生 | Led |
| US9356070B2 (en) | 2012-08-15 | 2016-05-31 | Epistar Corporation | Light-emitting device |
| US20140048824A1 (en) | 2012-08-15 | 2014-02-20 | Epistar Corporation | Light-emitting device |
| US9612002B2 (en) | 2012-10-18 | 2017-04-04 | GE Lighting Solutions, LLC | LED lamp with Nd-glass bulb |
| US20140209950A1 (en) * | 2013-01-31 | 2014-07-31 | Luxo-Led Co., Limited | Light emitting diode package module |
| US9752757B2 (en) | 2013-03-07 | 2017-09-05 | Quarkstar Llc | Light-emitting device with light guide for two way illumination |
| US8847261B1 (en) * | 2013-03-14 | 2014-09-30 | Cooledge Lighting Inc. | Light-emitting devices having engineered phosphor elements |
| US9920901B2 (en) | 2013-03-15 | 2018-03-20 | Cree, Inc. | LED lensing arrangement |
| US10400984B2 (en) * | 2013-03-15 | 2019-09-03 | Cree, Inc. | LED light fixture and unitary optic member therefor |
| USD735683S1 (en) * | 2013-05-03 | 2015-08-04 | Cree, Inc. | LED package |
| USD758976S1 (en) * | 2013-08-08 | 2016-06-14 | Cree, Inc. | LED package |
| US9335023B2 (en) * | 2013-12-11 | 2016-05-10 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Quantum dot lens and manufacturing method thereof |
| USD746240S1 (en) * | 2013-12-30 | 2015-12-29 | Cree, Inc. | LED package |
| KR102188500B1 (ko) * | 2014-07-28 | 2020-12-09 | 삼성전자주식회사 | 발광다이오드 패키지 및 이를 이용한 조명장치 |
| WO2016086173A1 (en) * | 2014-11-25 | 2016-06-02 | Quarkstar Llc | Lighting device having a 3d scattering element and optical extractor with convex output surface |
| EP3254313B1 (en) * | 2015-02-04 | 2020-09-16 | Merck Patent GmbH | Electronic element and display |
| US10118547B2 (en) * | 2015-11-13 | 2018-11-06 | The Boeing Company | Embedded lighting features for lighting panels |
| DE102016113942A1 (de) * | 2016-07-28 | 2018-02-15 | HELLA GmbH & Co. KGaA | Lichtquelle mit einer Primäroptik aus Silikon und Verfahren zur Herstellung der Lichtquelle |
| KR102646700B1 (ko) * | 2018-08-16 | 2024-03-13 | 엘지이노텍 주식회사 | 조명 장치 |
| CN110544738B (zh) * | 2019-08-22 | 2021-06-29 | 佛山市柔浩电子有限公司 | 一种紫外线发光二极管结构 |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2311417B2 (de) * | 1972-03-14 | 1977-07-14 | Elektrolumineszierende diodenanordnung | |
| DE2942875A1 (de) * | 1978-11-02 | 1980-05-14 | Philips Nv | Koppelvorrichtung zwischen optischen fasern und elektro-optischen elementen |
| DE69016885T2 (de) * | 1989-08-29 | 1995-06-08 | Hewlett Packard Co | Lampe mit hohem Wirkungsgrad oder Lichtempfänger. |
| US5684309A (en) | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
| DE19638667A1 (de) * | 1996-09-20 | 1998-04-02 | Siemens Ag | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
| WO1998031055A1 (en) | 1997-01-09 | 1998-07-16 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| US5831277A (en) | 1997-03-19 | 1998-11-03 | Northwestern University | III-nitride superlattice structures |
| WO2001039282A2 (de) | 1999-11-19 | 2001-05-31 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optische halbleitervorrichtung mit mehrfach-quantentopf-struktur |
| WO2002054502A1 (de) * | 2000-12-28 | 2002-07-11 | Tridonic Optoelectronics Gmbh | Lichtquelle mit einem lichtemittlierenden element |
| WO2002056390A1 (de) | 2001-01-15 | 2002-07-18 | Osram Opto Semiconductors Gmbh | Luminszenzdiode und verfahren zu deren herstellung |
| DE10120703A1 (de) * | 2001-04-27 | 2002-10-31 | Osram Opto Semiconductors Gmbh | Halbleiterchip für die Optoelektronik |
| EP1455398A2 (en) * | 2003-03-03 | 2004-09-08 | Toyoda Gosei Co., Ltd. | Light emitting device comprising a phosphor layer and method of making same |
| WO2006034703A1 (de) | 2004-09-30 | 2006-04-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement und gehäuse für ein optoelektronisches bauelement |
| EP1744375A1 (de) * | 2005-07-14 | 2007-01-17 | Osram Opto Semiconductors GmbH | Optoelektronischer Chip und Herstellungsverfahren dafür |
| EP1840977A1 (en) * | 2004-12-24 | 2007-10-03 | Kyocera Corporation | Light-emitting device and illuminating device |
| WO2007126836A2 (en) * | 2006-04-04 | 2007-11-08 | Cree, Inc. | Uniform emission led package |
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| JP2007035802A (ja) * | 2005-07-25 | 2007-02-08 | Matsushita Electric Works Ltd | 発光装置 |
| WO2008025723A1 (en) * | 2006-08-29 | 2008-03-06 | Osram Sylvania Inc. | Enhanced emission from phosphor-converted leds using interferometric filters |
| US7994529B2 (en) * | 2008-11-05 | 2011-08-09 | Koninklijke Philips Electronics N.V. | LED with molded bi-directional optics |
| JP5325639B2 (ja) * | 2009-04-03 | 2013-10-23 | パナソニック株式会社 | 発光装置 |
| US8168998B2 (en) * | 2009-06-09 | 2012-05-01 | Koninklijke Philips Electronics N.V. | LED with remote phosphor layer and reflective submount |
-
2007
- 2007-10-17 DE DE102007049799A patent/DE102007049799A1/de not_active Withdrawn
-
2008
- 2008-09-10 KR KR1020107008650A patent/KR20100061562A/ko not_active Withdrawn
- 2008-09-10 EP EP08801318A patent/EP2193552A1/de not_active Withdrawn
- 2008-09-10 CN CN2008801088845A patent/CN101809765B/zh not_active Expired - Fee Related
- 2008-09-10 JP JP2010526155A patent/JP2010541220A/ja active Pending
- 2008-09-10 WO PCT/DE2008/001514 patent/WO2009039826A1/de not_active Ceased
- 2008-09-10 US US12/680,637 patent/US8624289B2/en not_active Expired - Fee Related
- 2008-09-18 TW TW097135863A patent/TWI419361B/zh not_active IP Right Cessation
Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2311417B2 (de) * | 1972-03-14 | 1977-07-14 | Elektrolumineszierende diodenanordnung | |
| DE2942875A1 (de) * | 1978-11-02 | 1980-05-14 | Philips Nv | Koppelvorrichtung zwischen optischen fasern und elektro-optischen elementen |
| DE69016885T2 (de) * | 1989-08-29 | 1995-06-08 | Hewlett Packard Co | Lampe mit hohem Wirkungsgrad oder Lichtempfänger. |
| US5684309A (en) | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
| DE19638667A1 (de) * | 1996-09-20 | 1998-04-02 | Siemens Ag | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008045331A1 (de) | 2008-09-01 | 2010-03-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| US8785951B2 (en) | 2008-09-01 | 2014-07-22 | Osram Opto Semiconductors Gmbh | Optoelectric component |
| DE102008057140A1 (de) | 2008-11-13 | 2010-05-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| US8558259B2 (en) | 2008-11-13 | 2013-10-15 | Osram Opto Semiconductors Gmbh | Optoelectronic component having a dome-like conversion element |
| CN102986032A (zh) * | 2010-06-17 | 2013-03-20 | 邱罗利士公司 | 发光结构及其制法 |
| EP2583306A4 (en) * | 2010-06-17 | 2014-09-17 | Achrolux Inc | LIGHT-EMITTING STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF |
| JP2015149468A (ja) * | 2014-02-05 | 2015-08-20 | 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． | 発光ダイオードパッケージ及びその製造方法 |
| CN108255545A (zh) * | 2016-12-28 | 2018-07-06 | 阿里巴巴集团控股有限公司 | 组件间的功能调用方法、装置及组件化架构系统 |
| WO2019161895A1 (en) * | 2018-02-21 | 2019-08-29 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic component |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200933932A (en) | 2009-08-01 |
| US8624289B2 (en) | 2014-01-07 |
| JP2010541220A (ja) | 2010-12-24 |
| TWI419361B (zh) | 2013-12-11 |
| US20100308356A1 (en) | 2010-12-09 |
| EP2193552A1 (de) | 2010-06-09 |
| KR20100061562A (ko) | 2010-06-07 |
| CN101809765B (zh) | 2012-06-27 |
| CN101809765A (zh) | 2010-08-18 |
| WO2009039826A1 (de) | 2009-04-02 |
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