DE102004012819A1 - Leistungshalbleiterbauelement mit erhöhter Robustheit - Google Patents

Leistungshalbleiterbauelement mit erhöhter Robustheit Download PDF

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Publication number
DE102004012819A1
DE102004012819A1 DE102004012819A DE102004012819A DE102004012819A1 DE 102004012819 A1 DE102004012819 A1 DE 102004012819A1 DE 102004012819 A DE102004012819 A DE 102004012819A DE 102004012819 A DE102004012819 A DE 102004012819A DE 102004012819 A1 DE102004012819 A1 DE 102004012819A1
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DE
Germany
Prior art keywords
power semiconductor
semiconductor component
increased robustness
layer
contact layer
Prior art date
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Granted
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DE102004012819A
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English (en)
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DE102004012819B4 (de
Inventor
Hans-Joachim Schulze
Helmut Strack
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Infineon Technologies AG
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Infineon Technologies AG
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Publication date
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Priority to DE102004012819A priority Critical patent/DE102004012819B4/de
Priority to US11/081,787 priority patent/US7304349B2/en
Publication of DE102004012819A1 publication Critical patent/DE102004012819A1/de
Application granted granted Critical
Publication of DE102004012819B4 publication Critical patent/DE102004012819B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

Die Erfindung betrifft ein Leistungshalbleiterbauelement mit erhöhter Robustheit, bei dem eine unmittelbar auf eine Hauptoberfläche (7, 11) des Halbleiterkörpers (1) aufgetragene Kontaktschicht (13, 14) aus einem schwer schmelzenden Metall (13) oder aus einer dünnen Aluminiumschicht (14), deren Schichtdicke vorzugsweise zwischen 1 und 5 nm liegt, besteht. Diese Kontaktschicht ist mit einem üblichen Mehrschichtmetallisierungssystem (15) verstärkt. Die Aluminiumschicht kann gegebenenfalls strukturiert (14') sein.
DE102004012819A 2004-03-16 2004-03-16 Leistungshalbleiterbauelement mit erhöhter Robustheit Expired - Fee Related DE102004012819B4 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE102004012819A DE102004012819B4 (de) 2004-03-16 2004-03-16 Leistungshalbleiterbauelement mit erhöhter Robustheit
US11/081,787 US7304349B2 (en) 2004-03-16 2005-03-16 Power semiconductor component with increased robustness

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004012819A DE102004012819B4 (de) 2004-03-16 2004-03-16 Leistungshalbleiterbauelement mit erhöhter Robustheit

Publications (2)

Publication Number Publication Date
DE102004012819A1 true DE102004012819A1 (de) 2005-10-20
DE102004012819B4 DE102004012819B4 (de) 2006-02-23

Family

ID=34988780

Family Applications (1)

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DE102004012819A Expired - Fee Related DE102004012819B4 (de) 2004-03-16 2004-03-16 Leistungshalbleiterbauelement mit erhöhter Robustheit

Country Status (2)

Country Link
US (1) US7304349B2 (de)
DE (1) DE102004012819B4 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354692B2 (en) 2006-03-15 2013-01-15 Infineon Technologies Ag Vertical semiconductor power switch, electronic component and methods of producing the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4221012B2 (ja) * 2006-06-12 2009-02-12 トヨタ自動車株式会社 半導体装置とその製造方法
JPWO2010109572A1 (ja) 2009-03-23 2012-09-20 トヨタ自動車株式会社 半導体装置
US10381455B1 (en) 2015-09-11 2019-08-13 United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Diffusion barrier systems (DBS) for high temperature semiconductor electrical contacts
US11869840B2 (en) 2018-07-03 2024-01-09 Infineon Technologies Ag Silicon carbide device and method for forming a silicon carbide device
US11367683B2 (en) 2018-07-03 2022-06-21 Infineon Technologies Ag Silicon carbide device and method for forming a silicon carbide device
US11610861B2 (en) * 2020-09-14 2023-03-21 Infineon Technologies Austria Ag Diffusion soldering with contaminant protection

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2930779C2 (de) * 1978-07-28 1983-08-04 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleitervorrichtung
US5156998A (en) * 1991-09-30 1992-10-20 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes
DE3632209C2 (de) * 1985-09-24 1993-05-27 Sharp K.K., Osaka, Jp
US5442200A (en) * 1994-06-03 1995-08-15 Advanced Technology Materials, Inc. Low resistance, stable ohmic contacts to silcon carbide, and method of making the same
US6309965B1 (en) * 1997-08-08 2001-10-30 Siemens Aktiengesellschaft Method of producing a semiconductor body with metallization on the back side that includes a titanium nitride layer to reduce warping

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
US4500898A (en) * 1982-07-06 1985-02-19 General Electric Company Semiconductor devices utilizing eutectic masks
US4692781B2 (en) 1984-06-06 1998-01-20 Texas Instruments Inc Semiconductor device with electrostatic discharge protection
KR920007171A (ko) 1990-09-05 1992-04-28 김광호 고신뢰성 반도체장치
DE19804580C2 (de) 1998-02-05 2002-03-14 Infineon Technologies Ag Leistungsdiode in Halbleitermaterial
DE19840239A1 (de) 1998-09-03 2000-03-09 Siemens Ag Leistungshalbleiter-Bauelement mit einer Anordnung zum Schutz vor Schäden durch elektrostatische Entladungen
US7015562B2 (en) * 2000-06-28 2006-03-21 Infineon Technologies Ag High-voltage diode
JP2003045875A (ja) 2001-07-30 2003-02-14 Nec Kagobutsu Device Kk 半導体装置およびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2930779C2 (de) * 1978-07-28 1983-08-04 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleitervorrichtung
DE3632209C2 (de) * 1985-09-24 1993-05-27 Sharp K.K., Osaka, Jp
US5156998A (en) * 1991-09-30 1992-10-20 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes
US5442200A (en) * 1994-06-03 1995-08-15 Advanced Technology Materials, Inc. Low resistance, stable ohmic contacts to silcon carbide, and method of making the same
US6309965B1 (en) * 1997-08-08 2001-10-30 Siemens Aktiengesellschaft Method of producing a semiconductor body with metallization on the back side that includes a titanium nitride layer to reduce warping

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Geib, K.M., Wilson, C., Long, R. G., Wilmsen,C.W.:Reaction between SIC and W, Mo, and Ta at elevatedtemperatures. In: Journal of Applied Physics, ISSN 0021-8979, 1990, Vol.68, No. 6, S.2796-2800. Waltrop, J.R.,Grant, R. W.: Schottky barrier and interface chemistry of annealed metal contacts to alpha 6H-SIC: Crystal face dependance. In: AppliedPhysics Letters, ISSN 0003-6951, 1993, Vol.62 No. 21, Seite 2685-2687 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354692B2 (en) 2006-03-15 2013-01-15 Infineon Technologies Ag Vertical semiconductor power switch, electronic component and methods of producing the same

Also Published As

Publication number Publication date
US7304349B2 (en) 2007-12-04
DE102004012819B4 (de) 2006-02-23
US20050212076A1 (en) 2005-09-29

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee