WO2003075340A3 - Method for obtaining metal to metal contact between a metal surface and a bonding pad. - Google Patents

Method for obtaining metal to metal contact between a metal surface and a bonding pad. Download PDF

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Publication number
WO2003075340A3
WO2003075340A3 PCT/BE2003/000038 BE0300038W WO03075340A3 WO 2003075340 A3 WO2003075340 A3 WO 2003075340A3 BE 0300038 W BE0300038 W BE 0300038W WO 03075340 A3 WO03075340 A3 WO 03075340A3
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WO
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Patent type
Prior art keywords
metal
surface
bonding
method
obtaining
Prior art date
Application number
PCT/BE2003/000038
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French (fr)
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WO2003075340A2 (en )
Inventor
Pedro Banda
Meng Ho
Caroline Whelan
Original Assignee
Imec Inter Uni Micro Electr
Pedro Banda
Meng Ho
Caroline Whelan
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    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
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    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02163Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
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Abstract

A method for obtaining metal-to-metal contact between a bonding surface of a metallic bonding area and a second metal surface is disclosed. The method comprises the steps of : - coating said bonding surface of said metallic bonding area with a chemical composition that forms a self-assembled monolayer on said bonding surface of said metallic bonding area, and - bonding said second metal surface on said coated bonding surface through said self­assembled monolayer. The combination of the coating step and the bonding step result in a metal to metal contact between the bonding surface of he metallic bonding area and the second metal surface. The metallic bonding area can be a semiconductor bond pad, e.g. of a semiconductor device.
PCT/BE2003/000038 2002-03-01 2003-03-03 Method for obtaining metal to metal contact between a metal surface and a bonding pad. WO2003075340A3 (en)

Priority Applications (2)

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US36152502 true 2002-03-01 2002-03-01
US60/361,525 2002-03-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AU2003209862A AU2003209862A1 (en) 2002-03-01 2003-03-03 Method for obtaining metal to metal contact between a metal surface and a bonding pad.

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WO2003075340A3 true true WO2003075340A3 (en) 2004-03-18

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7368377B2 (en) * 2004-12-09 2008-05-06 Interuniversitair Microelektronica Centrum (Imec) Vzw Method for selective deposition of a thin self-assembled monolayer
JP4035733B2 (en) 2005-01-19 2008-01-23 セイコーエプソン株式会社 Processing method of the production method and the electrical connection portion of the semiconductor device
DE102006043133B4 (en) 2006-09-14 2009-09-24 Infineon Technologies Ag Connection pad to a contact of a device and process for its preparation
US7911061B2 (en) 2007-06-25 2011-03-22 Infineon Technologies Ag Semiconductor device
DE102008016427B4 (en) 2008-03-31 2018-01-25 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Wire bonding on reactive metal surfaces of a metallization of a semiconductor device by providing a protective layer
FR2977383A1 (en) * 2011-06-30 2013-01-04 St Microelectronics Grenoble 2 reception pad of a copper wire
DE102011081964A1 (en) * 2011-09-01 2013-03-07 Robert Bosch Gmbh A method for bonding semiconductor components,
JP5946665B2 (en) * 2012-03-19 2016-07-06 Jx金属株式会社 Wire bonding or an Au stud bump electrode
US8916448B2 (en) * 2013-01-09 2014-12-23 International Business Machines Corporation Metal to metal bonding for stacked (3D) integrated circuits
WO2014125913A1 (en) * 2013-02-18 2014-08-21 株式会社オートネットワーク技術研究所 Electrical connection structure and terminal
DE102016116451A1 (en) * 2016-09-02 2018-03-08 Osram Opto Semiconductors Gmbh Electrically conductive contact element for an optoelectronic component, an optoelectronic component and process for producing an optoelectronic component

Citations (3)

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Publication number Priority date Publication date Assignee Title
US5264731A (en) * 1987-06-25 1993-11-23 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device
WO1999008317A1 (en) * 1997-08-04 1999-02-18 Infineon Technologies Ag Integrated electric circuit with a passivation layer
US6323131B1 (en) * 1998-06-13 2001-11-27 Agere Systems Guardian Corp. Passivated copper surfaces

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264731A (en) * 1987-06-25 1993-11-23 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device
WO1999008317A1 (en) * 1997-08-04 1999-02-18 Infineon Technologies Ag Integrated electric circuit with a passivation layer
US6323131B1 (en) * 1998-06-13 2001-11-27 Agere Systems Guardian Corp. Passivated copper surfaces

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