WO2003075340A3 - Method for obtaining metal to metal contact between a metal surface and a bonding pad. - Google Patents

Method for obtaining metal to metal contact between a metal surface and a bonding pad.

Info

Publication number
WO2003075340A3
WO2003075340A3 PCT/BE2003/000038 BE0300038W WO2003075340A3 WO 2003075340 A3 WO2003075340 A3 WO 2003075340A3 BE 0300038 W BE0300038 W BE 0300038W WO 2003075340 A3 WO2003075340 A3 WO 2003075340A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
bonding
metal
surface
metallic
area
Prior art date
Application number
PCT/BE2003/000038
Other languages
French (fr)
Other versions
WO2003075340A2 (en )
Inventor
Pedro Banda
Meng Ho
Caroline Whelan
Original Assignee
Imec Inter Uni Micro Electr
Pedro Banda
Meng Ho
Caroline Whelan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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    • HELECTRICITY
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/03Manufacturing methods
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    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02163Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165Reinforcing structures
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Abstract

A method for obtaining metal-to-metal contact between a bonding surface of a metallic bonding area and a second metal surface is disclosed. The method comprises the steps of : - coating said bonding surface of said metallic bonding area with a chemical composition that forms a self-assembled monolayer on said bonding surface of said metallic bonding area, and - bonding said second metal surface on said coated bonding surface through said self­assembled monolayer. The combination of the coating step and the bonding step result in a metal to metal contact between the bonding surface of he metallic bonding area and the second metal surface. The metallic bonding area can be a semiconductor bond pad, e.g. of a semiconductor device.
PCT/BE2003/000038 2002-03-01 2003-03-03 Method for obtaining metal to metal contact between a metal surface and a bonding pad. WO2003075340A3 (en)

Priority Applications (2)

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US36152502 true 2002-03-01 2002-03-01
US60/361,525 2002-03-01

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WO2003075340A3 true true WO2003075340A3 (en) 2004-03-18

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7368377B2 (en) * 2004-12-09 2008-05-06 Interuniversitair Microelektronica Centrum (Imec) Vzw Method for selective deposition of a thin self-assembled monolayer
JP4035733B2 (en) 2005-01-19 2008-01-23 セイコーエプソン株式会社 Processing method of the production method and the electrical connection portion of the semiconductor device
DE102006043133B4 (en) 2006-09-14 2009-09-24 Infineon Technologies Ag Connection pad to a contact of a device and process for its preparation
US7911061B2 (en) 2007-06-25 2011-03-22 Infineon Technologies Ag Semiconductor device
DE102008016427B4 (en) 2008-03-31 2018-01-25 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Wire bonding on reactive metal surfaces of a metallization of a semiconductor device by providing a protective layer
FR2977383A1 (en) * 2011-06-30 2013-01-04 St Microelectronics Grenoble 2 reception pad of a copper wire
DE102011081964A1 (en) * 2011-09-01 2013-03-07 Robert Bosch Gmbh A method for bonding semiconductor components,
JP5946665B2 (en) * 2012-03-19 2016-07-06 Jx金属株式会社 Wire bonding or an Au stud bump electrode
US8916448B2 (en) * 2013-01-09 2014-12-23 International Business Machines Corporation Metal to metal bonding for stacked (3D) integrated circuits
WO2014125913A1 (en) * 2013-02-18 2014-08-21 株式会社オートネットワーク技術研究所 Electrical connection structure and terminal

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264731A (en) * 1987-06-25 1993-11-23 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device
WO1999008317A1 (en) * 1997-08-04 1999-02-18 Infineon Technologies Ag Integrated electric circuit with a passivation layer
US6323131B1 (en) * 1998-06-13 2001-11-27 Agere Systems Guardian Corp. Passivated copper surfaces

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264731A (en) * 1987-06-25 1993-11-23 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device
WO1999008317A1 (en) * 1997-08-04 1999-02-18 Infineon Technologies Ag Integrated electric circuit with a passivation layer
US6323131B1 (en) * 1998-06-13 2001-11-27 Agere Systems Guardian Corp. Passivated copper surfaces

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