DE102004003831A1 - Kristallwachstumsverfahren - Google Patents
Kristallwachstumsverfahren Download PDFInfo
- Publication number
- DE102004003831A1 DE102004003831A1 DE200410003831 DE102004003831A DE102004003831A1 DE 102004003831 A1 DE102004003831 A1 DE 102004003831A1 DE 200410003831 DE200410003831 DE 200410003831 DE 102004003831 A DE102004003831 A DE 102004003831A DE 102004003831 A1 DE102004003831 A1 DE 102004003831A1
- Authority
- DE
- Germany
- Prior art keywords
- temperature
- cooling
- less
- crystal
- birefringence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 92
- 238000000137 annealing Methods 0.000 title claims abstract description 61
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 title claims description 7
- 238000001816 cooling Methods 0.000 claims abstract description 60
- 229910001634 calcium fluoride Inorganic materials 0.000 claims abstract description 24
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims abstract description 22
- 238000002844 melting Methods 0.000 claims abstract description 22
- 230000008018 melting Effects 0.000 claims abstract description 22
- 239000000155 melt Substances 0.000 claims abstract description 6
- 239000007858 starting material Substances 0.000 claims abstract description 6
- 229910001632 barium fluoride Inorganic materials 0.000 claims abstract description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims abstract description 3
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 claims abstract description 3
- 229910001637 strontium fluoride Inorganic materials 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 56
- 230000008569 process Effects 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000010583 slow cooling Methods 0.000 claims description 4
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 abstract 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011575 calcium Substances 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 abstract 1
- 230000004075 alteration Effects 0.000 description 13
- 238000013459 approach Methods 0.000 description 11
- 230000035882 stress Effects 0.000 description 11
- 229910004261 CaF 2 Inorganic materials 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 8
- 230000006872 improvement Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009395 breeding Methods 0.000 description 3
- 230000001488 breeding effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910001512 metal fluoride Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 206010010071 Coma Diseases 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44219403P | 2003-01-24 | 2003-01-24 | |
| US60/442194 | 2003-01-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102004003831A1 true DE102004003831A1 (de) | 2004-07-29 |
Family
ID=32655736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE200410003831 Withdrawn DE102004003831A1 (de) | 2003-01-24 | 2004-01-26 | Kristallwachstumsverfahren |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7033433B2 (https=) |
| JP (1) | JP2004224692A (https=) |
| DE (1) | DE102004003831A1 (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005010654A1 (de) * | 2005-03-08 | 2006-09-14 | Schott Ag | Verfahren zur Herstellung von hochhomogenen, spannungsarmen Einkristallen mit geringer Streuung |
| EP1566471A3 (de) * | 2004-02-23 | 2007-08-01 | Schott AG | Herstellung von spannungsarmen, grossvolumigen Kristallen mit geringer Spannungsdoppelbrechung und homogener Brechzahl, sowie deren Verwendung |
| US7393409B2 (en) | 2004-02-23 | 2008-07-01 | Schott Ag | Method for making large-volume CaF2 single cystals with reduced scattering and improved laser stability, the crystals made by the method and uses thereof |
| RU2400573C1 (ru) * | 2009-03-16 | 2010-09-27 | Закрытое акционерное общество (ЗАО) "ИНКРОМ" | Способ изготовления монокристаллов фторидов кальция и бария |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040099205A1 (en) * | 2002-09-03 | 2004-05-27 | Qiao Li | Method of growing oriented calcium fluoride single crystals |
| DE102004008754A1 (de) * | 2004-02-23 | 2005-09-08 | Schott Ag | Herstellung von spannungsarmen, nicht (111)-orientierten, großvolumigen Einkristallen mit geringer Spannungsdoppelbrechung und homogener Brechzahl, sowie deren Verwendung |
| DE102004008752A1 (de) * | 2004-02-23 | 2005-09-08 | Schott Ag | Herstellung von großvolumigen CaF2-Einkristallen für die Verwendung als optische Bauelemente mit einer optischen Achse parallel zur (100) oder (110)-Kristallachse |
| US20060201412A1 (en) * | 2005-03-08 | 2006-09-14 | Christian Poetisch | Method of making highly uniform low-stress single crystals with reduced scattering |
| KR101400075B1 (ko) * | 2006-01-20 | 2014-05-28 | 에이엠지 아이디얼캐스트 솔라 코포레이션 | 광전 변환 소자용 기하학적 다결정 캐스트 실리콘 및 기하학적 다결정 캐스트 실리콘 바디들을 제조하는 방법 및 장치 |
| US8252208B2 (en) * | 2008-10-31 | 2012-08-28 | Corning Incorporated | Calcium fluoride optics with improved laser durability |
| US8986572B2 (en) | 2009-10-21 | 2015-03-24 | Corning Incorporated | Calcium fluoride optics with improved laser durability |
| US8784970B2 (en) * | 2010-07-22 | 2014-07-22 | Nihon Kessho Kogaku Co., Ltd. | Fluorite |
| CN106435730A (zh) * | 2016-09-08 | 2017-02-22 | 中国科学院上海光学精密机械研究所 | 多坩埚下降法制备氟化镁晶体的生长设备及其生长方法 |
| CN115896922B (zh) * | 2023-02-16 | 2023-05-16 | 杭州天桴光电技术有限公司 | 一种大尺寸氟化钙单晶生长与在位退火的装置 |
| CN119292384B (zh) * | 2024-12-10 | 2025-05-30 | 江西联创光电超导应用有限公司 | 一种晶体生长过程热量管理优化方法及系统 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10010484A1 (de) * | 2000-03-03 | 2001-09-13 | Schott Glas | Verfahren und Vorrichtung zur Züchtung von großvolumigen orientierten Einkristallen |
| EP0939147B1 (en) * | 1998-02-26 | 2003-09-03 | Nikon Corporation | A manufacturing method for calcium fluoride and calcium fluoride for photolithography |
| JP2000081367A (ja) * | 1998-09-07 | 2000-03-21 | Nikon Corp | 光透過性光学部材、その製造方法、その評価方法、および光リソグラフィー装置 |
| US6377332B1 (en) * | 1999-02-03 | 2002-04-23 | Nikon Corporation | Optical member for photolithography and photolithography apparatus |
| US6350310B1 (en) * | 1999-06-07 | 2002-02-26 | Sandia Corporation | Crystal growth and annealing for minimized residual stress |
| US6620347B1 (en) * | 1999-10-06 | 2003-09-16 | Coherent, Inc. | Crystalline filters for ultraviolet light sensors |
| FR2806743B1 (fr) * | 2000-03-24 | 2002-06-28 | Corning Inc | PROCEDE ET DISPOSITIF DE CROISSANCE DE MONOCRISTAUX, NOTAMMENT DE CaF2 |
| EP1337696A1 (en) * | 2000-10-13 | 2003-08-27 | Corning Incorporated | Method and device for producing optical fluoride crystals |
| US6850371B2 (en) * | 2001-03-15 | 2005-02-01 | Nikon Corporation | Optical member and method of producing the same, and projection aligner |
| RU2001111056A (ru) * | 2001-04-16 | 2003-04-10 | Репкина Тать на Александровна | Способ выращивания монокристаллов фторида кальция |
| US20040099205A1 (en) * | 2002-09-03 | 2004-05-27 | Qiao Li | Method of growing oriented calcium fluoride single crystals |
-
2004
- 2004-01-14 US US10/757,751 patent/US7033433B2/en not_active Expired - Fee Related
- 2004-01-26 JP JP2004016598A patent/JP2004224692A/ja active Pending
- 2004-01-26 DE DE200410003831 patent/DE102004003831A1/de not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1566471A3 (de) * | 2004-02-23 | 2007-08-01 | Schott AG | Herstellung von spannungsarmen, grossvolumigen Kristallen mit geringer Spannungsdoppelbrechung und homogener Brechzahl, sowie deren Verwendung |
| US7393409B2 (en) | 2004-02-23 | 2008-07-01 | Schott Ag | Method for making large-volume CaF2 single cystals with reduced scattering and improved laser stability, the crystals made by the method and uses thereof |
| US7534412B2 (en) | 2004-02-23 | 2009-05-19 | Schott Ag | Large-volume CaF2 single crystals with reduced scattering and improved laser stability, and uses thereof |
| US7968074B2 (en) | 2004-02-23 | 2011-06-28 | Hellma Materials Gmbh & Co. Kg | Method for making low-stress large-volume crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby |
| DE102005010654A1 (de) * | 2005-03-08 | 2006-09-14 | Schott Ag | Verfahren zur Herstellung von hochhomogenen, spannungsarmen Einkristallen mit geringer Streuung |
| RU2400573C1 (ru) * | 2009-03-16 | 2010-09-27 | Закрытое акционерное общество (ЗАО) "ИНКРОМ" | Способ изготовления монокристаллов фторидов кальция и бария |
Also Published As
| Publication number | Publication date |
|---|---|
| US7033433B2 (en) | 2006-04-25 |
| US20040154527A1 (en) | 2004-08-12 |
| JP2004224692A (ja) | 2004-08-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |