DE10134938A1 - Halbleiterbauelement sowie ein Verfahren zur Herstellung des Halbleiterbauelements - Google Patents
Halbleiterbauelement sowie ein Verfahren zur Herstellung des HalbleiterbauelementsInfo
- Publication number
- DE10134938A1 DE10134938A1 DE10134938A DE10134938A DE10134938A1 DE 10134938 A1 DE10134938 A1 DE 10134938A1 DE 10134938 A DE10134938 A DE 10134938A DE 10134938 A DE10134938 A DE 10134938A DE 10134938 A1 DE10134938 A1 DE 10134938A1
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- etching
- semiconductor component
- layer
- medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000011148 porous material Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims description 54
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 2
- 238000009736 wetting Methods 0.000 claims description 2
- 238000007792 addition Methods 0.000 claims 2
- 239000000654 additive Substances 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 1
- 230000000996 additive effect Effects 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- -1 ethanol Chemical compound 0.000 claims 1
- 239000010410 layer Substances 0.000 description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 239000003990 capacitor Substances 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 10
- 230000001419 dependent effect Effects 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/121—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid for determining moisture content, e.g. humidity, of the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10134938A DE10134938A1 (de) | 2001-07-18 | 2001-07-18 | Halbleiterbauelement sowie ein Verfahren zur Herstellung des Halbleiterbauelements |
| JP2003514583A JP4227516B2 (ja) | 2001-07-18 | 2002-07-06 | 容量式センサ並びに容量式センサの製造方法 |
| AT02754323T ATE329255T1 (de) | 2001-07-18 | 2002-07-06 | Halbleiterbauelement als kapazitiver feuchtesensor, sowie ein verfahren zur herstellung des halbleiterbauelements |
| PCT/DE2002/002481 WO2003009334A2 (de) | 2001-07-18 | 2002-07-06 | Halbleiterbauelement als kapazitiver feuchtesensor, sowie ein verfahren zur herstellung des halbleiterbauelements |
| DE50207120T DE50207120D1 (de) | 2001-07-18 | 2002-07-06 | Halbleiterbauelement als kapazitiver feuchtesensor, sowie ein verfahren zur herstellung des halbleiterbauelements |
| US10/479,563 US7193290B2 (en) | 2001-07-18 | 2002-07-06 | Semiconductor component and a method for producing the same |
| EP02754323A EP1412732B1 (de) | 2001-07-18 | 2002-07-06 | Halbleiterbauelement als kapazitiver feuchtesensor, sowie ein verfahren zur herstellung des halbleiterbauelements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10134938A DE10134938A1 (de) | 2001-07-18 | 2001-07-18 | Halbleiterbauelement sowie ein Verfahren zur Herstellung des Halbleiterbauelements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE10134938A1 true DE10134938A1 (de) | 2003-02-06 |
Family
ID=7692211
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10134938A Withdrawn DE10134938A1 (de) | 2001-07-18 | 2001-07-18 | Halbleiterbauelement sowie ein Verfahren zur Herstellung des Halbleiterbauelements |
| DE50207120T Expired - Lifetime DE50207120D1 (de) | 2001-07-18 | 2002-07-06 | Halbleiterbauelement als kapazitiver feuchtesensor, sowie ein verfahren zur herstellung des halbleiterbauelements |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE50207120T Expired - Lifetime DE50207120D1 (de) | 2001-07-18 | 2002-07-06 | Halbleiterbauelement als kapazitiver feuchtesensor, sowie ein verfahren zur herstellung des halbleiterbauelements |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7193290B2 (enExample) |
| EP (1) | EP1412732B1 (enExample) |
| JP (1) | JP4227516B2 (enExample) |
| AT (1) | ATE329255T1 (enExample) |
| DE (2) | DE10134938A1 (enExample) |
| WO (1) | WO2003009334A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012108997A1 (de) * | 2012-09-24 | 2014-03-27 | Heinrich-Heine-Universität Düsseldorf | Sensoranordnung und Verfahren zum Herstellen einer Sensoranordnung |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6931003B2 (en) * | 2000-02-09 | 2005-08-16 | Bookline Flolmstead Llc | Packet prioritization protocol for a large-scale, high speed computer network |
| US7110629B2 (en) * | 2002-07-22 | 2006-09-19 | Applied Materials, Inc. | Optical ready substrates |
| KR20060033721A (ko) * | 2003-05-29 | 2006-04-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 내장형 도파관 검출기 |
| CN1795592A (zh) * | 2003-05-29 | 2006-06-28 | 应用材料股份有限公司 | 掺杂质基底的波导检测器 |
| US7205624B2 (en) * | 2003-10-07 | 2007-04-17 | Applied Materials, Inc. | Self-aligned implanted waveguide detector |
| US7368312B1 (en) * | 2004-10-15 | 2008-05-06 | Morgan Research Corporation | MEMS sensor suite on a chip |
| ITMO20050159A1 (it) * | 2005-06-22 | 2006-12-23 | Angelo Grandi Cucine Societa P | Sistema per il controllo dell'umidita'. |
| WO2007027615A1 (en) * | 2005-09-01 | 2007-03-08 | Applied Materials, Inc. | Ridge technique for fabricating an optical detector and an optical waveguide |
| WO2007057794A1 (en) * | 2005-11-17 | 2007-05-24 | Nxp B.V. | Moisture sensor |
| US7710128B2 (en) * | 2006-09-09 | 2010-05-04 | Honeywell International Inc. | Method and apparatus for controlling the sensitivity and value of a capacitive humidity sensor |
| DE202008003354U1 (de) | 2008-03-09 | 2008-05-15 | Hidde, Axel R., Dr. Ing. | Leckageüberwachung bei zylindrischen Anordnungen |
| KR101093612B1 (ko) | 2008-11-12 | 2011-12-15 | 전자부품연구원 | 정전용량형 습도센서 및 그 제조방법 |
| EP2336757B1 (en) * | 2009-12-07 | 2018-09-19 | ams international AG | Integrated circuit with water presence detection arrangement and manufacturing method therefor |
| CN103119429B (zh) * | 2010-05-06 | 2016-01-20 | 首尔大学校产学协力团 | 电容性元件传感器及其制造方法 |
| EP2693207A1 (en) * | 2012-07-30 | 2014-02-05 | Nxp B.V. | Integrated circuit comprising a capacitive gas sensor |
| US8815054B2 (en) | 2012-10-05 | 2014-08-26 | The Procter & Gamble Company | Methods for making fibrous paper structures utilizing waterborne shape memory polymers |
| US9588073B2 (en) | 2012-12-19 | 2017-03-07 | Robert Bosch Gmbh | Resistive MEMS humidity sensor |
| EP2988122B1 (en) | 2014-08-20 | 2019-04-24 | ams international AG | Capacitive sensor |
| TWI601954B (zh) * | 2016-09-09 | 2017-10-11 | 長庚大學 | 電容式感濕元件及其使用方法 |
| KR102007446B1 (ko) * | 2018-05-21 | 2019-10-21 | 해성디에스 주식회사 | 센서 유닛, 이를 포함하는 온도 센서, 센서 유닛의 제조방법 및 이를 이용하여 제조된 온도 센서 |
| DE102018215018A1 (de) | 2018-09-04 | 2020-03-05 | Infineon Technologies Ag | Feuchtigkeitssensor |
| CN116854027A (zh) * | 2023-06-21 | 2023-10-10 | 北京大学 | 体硅内空腔结构及其制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4057823A (en) * | 1976-07-02 | 1977-11-08 | International Business Machines Corporation | Porous silicon dioxide moisture sensor and method for manufacture of a moisture sensor |
| US4277742A (en) * | 1977-01-31 | 1981-07-07 | Panametrics, Inc. | Absolute humidity sensors and methods of manufacturing humidity sensors |
| US4347550A (en) * | 1977-12-22 | 1982-08-31 | Peter Rockliff | Sensor detector element for an electrical hygrometer |
| GB2043908A (en) * | 1979-03-09 | 1980-10-08 | Moisture Control & Mesurement | Humidity Sensor Element |
| US4356150A (en) * | 1981-05-15 | 1982-10-26 | Honeywell Inc. | Humidity sensor with electrical rejection of contaminants |
| US4795968A (en) * | 1986-06-30 | 1989-01-03 | Sri International | Gas detection method and apparatus using chemisorption and/or physisorption |
| US5332697A (en) * | 1989-05-31 | 1994-07-26 | Smith Rosemary L | Formation of silicon nitride by nitridation of porous silicon |
| GB9306594D0 (en) * | 1993-03-30 | 1993-05-26 | Univ Keele | Sensor |
| US6202471B1 (en) * | 1997-10-10 | 2001-03-20 | Nanomaterials Research Corporation | Low-cost multilaminate sensors |
-
2001
- 2001-07-18 DE DE10134938A patent/DE10134938A1/de not_active Withdrawn
-
2002
- 2002-07-06 AT AT02754323T patent/ATE329255T1/de not_active IP Right Cessation
- 2002-07-06 JP JP2003514583A patent/JP4227516B2/ja not_active Expired - Fee Related
- 2002-07-06 US US10/479,563 patent/US7193290B2/en not_active Expired - Lifetime
- 2002-07-06 EP EP02754323A patent/EP1412732B1/de not_active Expired - Lifetime
- 2002-07-06 WO PCT/DE2002/002481 patent/WO2003009334A2/de not_active Ceased
- 2002-07-06 DE DE50207120T patent/DE50207120D1/de not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012108997A1 (de) * | 2012-09-24 | 2014-03-27 | Heinrich-Heine-Universität Düsseldorf | Sensoranordnung und Verfahren zum Herstellen einer Sensoranordnung |
Also Published As
| Publication number | Publication date |
|---|---|
| US7193290B2 (en) | 2007-03-20 |
| JP4227516B2 (ja) | 2009-02-18 |
| US20040155751A1 (en) | 2004-08-12 |
| EP1412732A2 (de) | 2004-04-28 |
| JP2004535589A (ja) | 2004-11-25 |
| WO2003009334A3 (de) | 2003-08-28 |
| DE50207120D1 (de) | 2006-07-20 |
| ATE329255T1 (de) | 2006-06-15 |
| WO2003009334A2 (de) | 2003-01-30 |
| EP1412732B1 (de) | 2006-06-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE10134938A1 (de) | Halbleiterbauelement sowie ein Verfahren zur Herstellung des Halbleiterbauelements | |
| DE19621996C2 (de) | Verfahren zur Herstellung einer Kombination eines Drucksensors und eines elektrochemischen Sensors | |
| DE3724966C2 (enExample) | ||
| DE69934841T2 (de) | Druckwandler und Herstellungsverfahren | |
| WO2001042776A1 (de) | Kapazitiver sensor | |
| DE2947050C2 (de) | Anordnung zum Nachweis von Ionen, Atomen und Molekülen in Gasen oder Lösungen | |
| DE3833136A1 (de) | Kapazitives fuehlelement und verfahren zu seiner herstellung | |
| DE2729249A1 (de) | Festkoerper-feuchtigkeitsgrad-messer | |
| DE4028062C2 (de) | Gassensoranordnung mit FET mit unterbrochenem Gate | |
| DE102009029621A1 (de) | Detektionsvorrichtung und Verfahren zur Detektion eines Gases | |
| WO2013072128A1 (de) | Integrierter feuchtesensor und verfahren zu dessen herstellung | |
| EP0810431A1 (de) | Elektrochemischer Sensor | |
| EP1115649B1 (de) | Mikromechanisches bauelement mit verschlossenen membranöffnungen | |
| DE3318213A1 (de) | Verfahren zum herstellen eines integrierten isolierschicht-feldeffekttransistors mit zur gateelektrode selbstausgerichteten kontakten | |
| DE2736200A1 (de) | Chemisch sensitiver feldeffekt- transistor und verfahren zur herstellung desselben | |
| DE19649366C2 (de) | Mikrosensor zur Flüssigkeitsanalyse, insbesondere von Alkohol-Benzin-Gemischen | |
| EP3822624B1 (de) | Kapazitives sensorelement zur erfassung mindestens einer eigenschaft eines fluiden mediums in mindestens einem messraum und verfahren zur herstellung des sensorelements | |
| WO2007098774A1 (de) | Gassensor und verfahren zu dessen herstellung | |
| DE102017200952B4 (de) | Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung | |
| DE112004001797T5 (de) | Elektrochemischer Chip mit integrierter Sensoranordnung, Verfahren zu dessen Bildung und Elektrodenbeschichtung | |
| DE2252868A1 (de) | Feldeffekttransistor mit zwei steuerelektroden fuer betrieb bei sehr hohen frequenzen | |
| EP0645621A2 (de) | Sensoranordnung | |
| EP0638948B1 (de) | Verfahren zur Herstellung katalytisch wirksamer Gasdiffusionselektroden | |
| DE10246050A1 (de) | Vorrichtung und Verfahren | |
| DE3445775A1 (de) | Kapazitiver halbleiterdruckaufnehmer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |