DE10085421T1 - Festkörperlaser-Vorrichtung - Google Patents
Festkörperlaser-VorrichtungInfo
- Publication number
- DE10085421T1 DE10085421T1 DE10085421T DE10085421T DE10085421T1 DE 10085421 T1 DE10085421 T1 DE 10085421T1 DE 10085421 T DE10085421 T DE 10085421T DE 10085421 T DE10085421 T DE 10085421T DE 10085421 T1 DE10085421 T1 DE 10085421T1
- Authority
- DE
- Germany
- Prior art keywords
- solid
- state laser
- laser apparatus
- state
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2000/009320 WO2002056433A1 (fr) | 2000-12-27 | 2000-12-27 | Laser solide |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10085421T1 true DE10085421T1 (de) | 2003-10-23 |
DE10085421B4 DE10085421B4 (de) | 2010-09-02 |
Family
ID=11736849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10085421T Expired - Fee Related DE10085421B4 (de) | 2000-12-27 | 2000-12-27 | Laserdiodenvorrichtung mit Fehlererfassung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6931048B2 (de) |
JP (1) | JPWO2002056433A1 (de) |
KR (2) | KR100453493B1 (de) |
DE (1) | DE10085421B4 (de) |
TW (1) | TW490897B (de) |
WO (1) | WO2002056433A1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10254566B4 (de) * | 2002-11-21 | 2009-01-29 | Laserline Gesellschaft für Entwicklung und Vertrieb von Diodenlasern mbH | Laserdiodenanordnung mit Überbrückungseinheiten |
WO2006061891A1 (ja) * | 2004-12-08 | 2006-06-15 | Mitsubishi Denki Kabushiki Kaisha | レーザダイオード励起固体レーザ発振器および該発振器におけるレーザダイオード制御方法 |
DE102005008100B4 (de) * | 2005-02-22 | 2007-03-08 | Mitsubishi Denki K.K. | Redundanzschaltung für in Reihe angeschlossene Dioden |
US7664150B2 (en) * | 2006-01-24 | 2010-02-16 | Nlight Photonics Corporation | Diode laser electrical isolation system |
DE102009005999A1 (de) * | 2009-01-23 | 2010-09-16 | Trumpf Laser Gmbh + Co. Kg | Verfahren zur Bestimmung der Degradation und/oder Effizienz von Lasermodulen und Lasereinheit |
US9853545B2 (en) | 2015-06-30 | 2017-12-26 | Microsoft Technology Licensing, Llc | Power regulator having current and voltage modes |
EP3796490A4 (de) * | 2018-05-18 | 2021-06-30 | Panasonic Intellectual Property Management Co., Ltd. | Laseroszillationsvorrichtung für ein direkt-diodenlaserverfahren und fehlerdiagnoseverfahren für die laseroszillationsvorrichtung |
CN113030713B (zh) * | 2021-03-05 | 2021-11-09 | 中国科学院国家空间科学中心 | 一种激光探测集成电路内部电平状态的系统 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05144063A (ja) * | 1991-11-21 | 1993-06-11 | Seiko Epson Corp | 光学式情報記録再生装置 |
JPH05343809A (ja) | 1992-06-08 | 1993-12-24 | Sumitomo Electric Ind Ltd | 半導体レーザ装置システム |
US5291505A (en) * | 1993-01-21 | 1994-03-01 | Hughes Aircraft Company | Active energy control for diode pumped laser systems using pulsewidth modulation |
JP2541095B2 (ja) * | 1993-05-31 | 1996-10-09 | 日本電気株式会社 | レ―ザの波長安定化方法 |
JPH0825833A (ja) | 1994-07-12 | 1996-01-30 | Nichiban Co Ltd | 電磁誘導発熱材料及びそれを有する部材、製本部材並びに製本ファイル |
JPH08136356A (ja) * | 1994-11-08 | 1996-05-31 | Nikon Corp | 温度検知装置及び方法並びにこれを用いた 半導体温度調節システム |
CA2159842A1 (en) * | 1994-12-05 | 1996-06-06 | Joe A. Ortiz | Diode drive current source |
JPH11508408A (ja) * | 1995-06-23 | 1999-07-21 | コヒーレント・インク | レーザーダイオードにおける波長安定化のための温度補正回路 |
DE19623883A1 (de) * | 1996-06-05 | 1997-12-11 | Siemens Ag | Optische Sendeeinrichtung |
US5734672A (en) * | 1996-08-06 | 1998-03-31 | Cutting Edge Optronics, Inc. | Smart laser diode array assembly and operating method using same |
JP3456120B2 (ja) * | 1997-09-09 | 2003-10-14 | 三菱電機株式会社 | レーザダイオード用電源制御装置 |
DE19723835A1 (de) * | 1997-06-06 | 1998-07-16 | Rofin Sinar Laser Gmbh | Elektrische Schutzschaltung für eine Reihenschaltung einer Anzahl von Laserdioden |
JP3456121B2 (ja) * | 1997-09-09 | 2003-10-14 | 三菱電機株式会社 | レーザダイオード用電源制御装置 |
US6255707B1 (en) * | 1998-08-24 | 2001-07-03 | Lucent Technologies, Inc. | Semiconductor laser reliability test structure and method |
US6574257B1 (en) * | 2000-02-01 | 2003-06-03 | Siros Technologies, Inc. | Near-field laser and detector apparatus and method |
-
2000
- 2000-12-27 WO PCT/JP2000/009320 patent/WO2002056433A1/ja active IP Right Grant
- 2000-12-27 US US10/048,233 patent/US6931048B2/en not_active Expired - Fee Related
- 2000-12-27 KR KR10-2002-7001041A patent/KR100453493B1/ko not_active IP Right Cessation
- 2000-12-27 JP JP2002501213A patent/JPWO2002056433A1/ja active Pending
- 2000-12-27 DE DE10085421T patent/DE10085421B4/de not_active Expired - Fee Related
- 2000-12-27 KR KR1020027001143A patent/KR20020081200A/ko not_active Application Discontinuation
- 2000-12-29 TW TW089128275A patent/TW490897B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW490897B (en) | 2002-06-11 |
KR20020081200A (ko) | 2002-10-26 |
DE10085421B4 (de) | 2010-09-02 |
KR100453493B1 (ko) | 2004-10-15 |
US6931048B2 (en) | 2005-08-16 |
KR20020081199A (ko) | 2002-10-26 |
JPWO2002056433A1 (ja) | 2005-04-21 |
WO2002056433A1 (fr) | 2002-07-18 |
US20020150139A1 (en) | 2002-10-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law |
Ref document number: 10085421 Country of ref document: DE Date of ref document: 20031023 Kind code of ref document: P |
|
8364 | No opposition during term of opposition | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |