DE10064941A1 - Gaseinlassorgan - Google Patents

Gaseinlassorgan

Info

Publication number
DE10064941A1
DE10064941A1 DE10064941A DE10064941A DE10064941A1 DE 10064941 A1 DE10064941 A1 DE 10064941A1 DE 10064941 A DE10064941 A DE 10064941A DE 10064941 A DE10064941 A DE 10064941A DE 10064941 A1 DE10064941 A1 DE 10064941A1
Authority
DE
Germany
Prior art keywords
gas
gas outlet
central
guide surface
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10064941A
Other languages
German (de)
English (en)
Inventor
Gerd Strauch
Johannes Kaeppeler
Martin Dauelsberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Priority to DE10064941A priority Critical patent/DE10064941A1/de
Priority to KR1020037003725A priority patent/KR100797227B1/ko
Priority to DE50115299T priority patent/DE50115299D1/de
Priority to PCT/EP2001/008139 priority patent/WO2002024985A1/de
Priority to EP01962856A priority patent/EP1322801B1/de
Priority to JP2002529574A priority patent/JP4922540B2/ja
Priority to AU2001283944A priority patent/AU2001283944A1/en
Priority to TW090122330A priority patent/TW555900B/zh
Publication of DE10064941A1 publication Critical patent/DE10064941A1/de
Priority to US10/395,948 priority patent/US7294207B2/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45576—Coaxial inlets for each gas
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE10064941A 2000-09-22 2000-12-23 Gaseinlassorgan Ceased DE10064941A1 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE10064941A DE10064941A1 (de) 2000-09-22 2000-12-23 Gaseinlassorgan
KR1020037003725A KR100797227B1 (ko) 2000-09-22 2001-07-14 결정기판상에 결정층을 증착하기 위한 방법 및 기체유입요소
DE50115299T DE50115299D1 (de) 2000-09-22 2001-07-14 Cvd-verfahren und gaseinlassorgan zur durchführung des verfahrens
PCT/EP2001/008139 WO2002024985A1 (de) 2000-09-22 2001-07-14 Gaseinlassorgan für cvd-verfahren und vorrichtung
EP01962856A EP1322801B1 (de) 2000-09-22 2001-07-14 Cvd-verfahren und gaseinlassorgan zur durchführung des verfahrens
JP2002529574A JP4922540B2 (ja) 2000-09-22 2001-07-14 結晶構造層堆積方法及びガス吸入素子
AU2001283944A AU2001283944A1 (en) 2000-09-22 2001-07-14 Gas inlet mechanism for cvd-method and device
TW090122330A TW555900B (en) 2000-09-22 2001-09-10 Gas inlet device
US10/395,948 US7294207B2 (en) 2000-09-22 2003-03-24 Gas-admission element for CVD processes, and device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10061671 2000-09-22
DE10064941A DE10064941A1 (de) 2000-09-22 2000-12-23 Gaseinlassorgan

Publications (1)

Publication Number Publication Date
DE10064941A1 true DE10064941A1 (de) 2002-04-11

Family

ID=7666705

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10064941A Ceased DE10064941A1 (de) 2000-09-22 2000-12-23 Gaseinlassorgan
DE50115299T Expired - Lifetime DE50115299D1 (de) 2000-09-22 2001-07-14 Cvd-verfahren und gaseinlassorgan zur durchführung des verfahrens

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE50115299T Expired - Lifetime DE50115299D1 (de) 2000-09-22 2001-07-14 Cvd-verfahren und gaseinlassorgan zur durchführung des verfahrens

Country Status (3)

Country Link
JP (1) JP4922540B2 (ja)
KR (1) KR100797227B1 (ja)
DE (2) DE10064941A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7625448B2 (en) 2004-02-25 2009-12-01 Aixtron Ag Inlet system for an MOCVD reactor
DE102008055582A1 (de) 2008-12-23 2010-06-24 Aixtron Ag MOCVD-Reaktor mit zylindrischem Gaseinlassorgan
WO2015028225A1 (fr) * 2013-09-02 2015-03-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede et dispositif de traitement de la surface libre d'un materiau
DE102015107297A1 (de) * 2015-05-11 2016-11-17 Von Ardenne Gmbh Prozessieranordnung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005056320A1 (de) * 2005-11-25 2007-06-06 Aixtron Ag CVD-Reaktor mit einem Gaseinlassorgan
KR100795487B1 (ko) * 2006-09-27 2008-01-16 주식회사 실트론 층류유동제어장치 및 이를 구비한 화학기상증착반응기

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1056430A (en) 1962-11-13 1967-01-25 Texas Instruments Inc Epitaxial process and apparatus for semiconductors
JPS5524424A (en) * 1978-08-09 1980-02-21 Kokusai Electric Co Ltd Forming device of pressure-reduced epitaxial layer
FR2628984B1 (fr) * 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a planetaire
FR2628985B1 (fr) * 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a paroi protegee contre les depots
JPH03126877A (ja) * 1989-10-11 1991-05-30 Babcock Hitachi Kk 光励起ｃｖｄ装置
JP3052574B2 (ja) * 1992-06-01 2000-06-12 富士通株式会社 半導体薄膜製造装置
JP3414475B2 (ja) * 1994-02-25 2003-06-09 スタンレー電気株式会社 結晶成長装置
JPH08335557A (ja) * 1995-06-05 1996-12-17 Japan Energy Corp 気相エピタキシャル成長装置
JPH09246192A (ja) * 1996-03-05 1997-09-19 Nissin Electric Co Ltd 薄膜気相成長装置
JP3376809B2 (ja) * 1996-03-27 2003-02-10 松下電器産業株式会社 有機金属気相成長装置
JPH104065A (ja) * 1996-06-17 1998-01-06 Toshiba Mach Co Ltd 枚葉式減圧ｃｖｄ装置
US5954881A (en) 1997-01-28 1999-09-21 Northrop Grumman Corporation Ceiling arrangement for an epitaxial growth reactor
EP0917596B1 (en) * 1997-04-10 2002-06-12 Uniphase Opto Holdings, Inc. Method of manufacturing a semiconductor device and a device for applying such a method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7625448B2 (en) 2004-02-25 2009-12-01 Aixtron Ag Inlet system for an MOCVD reactor
DE102008055582A1 (de) 2008-12-23 2010-06-24 Aixtron Ag MOCVD-Reaktor mit zylindrischem Gaseinlassorgan
WO2010072380A1 (de) 2008-12-23 2010-07-01 Aixtron Ag Mocvd-reaktor mit zylindrischem gaseinlassorgan
WO2015028225A1 (fr) * 2013-09-02 2015-03-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede et dispositif de traitement de la surface libre d'un materiau
FR3010092A1 (fr) * 2013-09-02 2015-03-06 Commissariat Energie Atomique Procede et dispositif de traitement de la surface libre d'un materiau
CN105765115A (zh) * 2013-09-02 2016-07-13 原子能及能源替代委员会 处理材料的自由表面的方法和装置
US10112838B2 (en) 2013-09-02 2018-10-30 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method and device for treating the free surface of a material
DE102015107297A1 (de) * 2015-05-11 2016-11-17 Von Ardenne Gmbh Prozessieranordnung

Also Published As

Publication number Publication date
KR100797227B1 (ko) 2008-01-23
JP4922540B2 (ja) 2012-04-25
KR20030033062A (ko) 2003-04-26
JP2004510324A (ja) 2004-04-02
DE50115299D1 (de) 2010-02-25

Similar Documents

Publication Publication Date Title
EP1322801B1 (de) Cvd-verfahren und gaseinlassorgan zur durchführung des verfahrens
DE69628211T2 (de) Prozesskammer mit innerer Tragstruktur
DE69732722T2 (de) CVD Verfahren
DE3888809T2 (de) Gerät zur Verdampfung von Desinfektionsmitteln.
EP2470684B1 (de) Cvd-verfahren und cvd-reaktor
EP1861520B1 (de) Gaseinlassorgan f]r einen cvd-reaktor
DE102011056589A1 (de) Gaseinlassorgan eines CVD-Reaktors
DE102014104218A1 (de) CVD-Reaktor mit Vorlaufzonen-Temperaturregelung
DE112006003315T5 (de) Gaskopf und Dünnfilm-Herstellungsvorrichtung
DE102009043840A1 (de) CVD-Reaktor mit streifenförmig verlaufenden Gaseintrittszonen sowie Verfahren zum Abscheiden einer Schicht auf einem Substrat in einem derartigen CVD-Reaktor
DE60302214T2 (de) Pumpenanschlusstück für prozesskammer für einzelne halbleiterscheiben frei von emissivitätsänderungen
EP1349968B1 (de) Fluidverteilungsvorrichtung für mehrere fluide
DE102012101717A1 (de) Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung
WO2003038144A1 (de) Verfahren und vorrichtung zum abscheiden insbesondere kristalliner schichten auf insbesondere kristallinen substraten
DE102020107517A1 (de) Suszeptor für einen CVD-Reaktor
DE10055182A1 (de) CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter
WO2018166955A1 (de) Verfahren und vorrichtung zur thermischen behandlung eines substrates
DE10064941A1 (de) Gaseinlassorgan
EP3871245A1 (de) Schirmplatte für einen cvd-reaktor
DE69133144T2 (de) Reaktor zur Behandlung von Wafern
EP1127176B1 (de) Vorrichtung zum herstellen und bearbeiten von halbleitersubstraten
DE60027935T2 (de) Vorrichtung und Verfahren zur Herstellung einer Wolframnitridschicht
WO2011098420A1 (de) Gaseinlassorgan mit prallplattenanordnung
DE102009009022A1 (de) Verfahren und Vorrichtung zur Beschichtung von flachen Substraten mit Chalkogenen
WO1999042636A1 (de) Cvd-reaktor und dessen verwendung

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: AIXTRON AG, 52134 HERZOGENRATH, DE

R082 Change of representative

Representative=s name: RIEDER & PARTNER PATENTANWAELTE - RECHTSANWALT, 42

Representative=s name: RIEDER & PARTNER PATENTANWAELTE - RECHTSANWALT, DE

R081 Change of applicant/patentee

Owner name: AIXTRON SE, DE

Free format text: FORMER OWNER: AIXTRON AG, 52134 HERZOGENRATH, DE

Effective date: 20111104

R082 Change of representative

Representative=s name: RIEDER & PARTNER MBB PATENTANWAELTE - RECHTSAN, DE

Effective date: 20111104

Representative=s name: RIEDER & PARTNER PATENTANWAELTE - RECHTSANWALT, DE

Effective date: 20111104

R016 Response to examination communication
R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final

Effective date: 20130420