DE50115299D1 - Cvd-verfahren und gaseinlassorgan zur durchführung des verfahrens - Google Patents

Cvd-verfahren und gaseinlassorgan zur durchführung des verfahrens

Info

Publication number
DE50115299D1
DE50115299D1 DE50115299T DE50115299T DE50115299D1 DE 50115299 D1 DE50115299 D1 DE 50115299D1 DE 50115299 T DE50115299 T DE 50115299T DE 50115299 T DE50115299 T DE 50115299T DE 50115299 D1 DE50115299 D1 DE 50115299D1
Authority
DE
Germany
Prior art keywords
carrying
cvd process
gas injector
injector
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE50115299T
Other languages
English (en)
Inventor
Gerd Strauch
Johannes Kaeppeler
Martin Dauelsberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Priority claimed from PCT/EP2001/008139 external-priority patent/WO2002024985A1/de
Application granted granted Critical
Publication of DE50115299D1 publication Critical patent/DE50115299D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45576—Coaxial inlets for each gas
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE50115299T 2000-09-22 2001-07-14 Cvd-verfahren und gaseinlassorgan zur durchführung des verfahrens Expired - Lifetime DE50115299D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10061671 2000-09-22
DE10064941A DE10064941A1 (de) 2000-09-22 2000-12-23 Gaseinlassorgan
PCT/EP2001/008139 WO2002024985A1 (de) 2000-09-22 2001-07-14 Gaseinlassorgan für cvd-verfahren und vorrichtung

Publications (1)

Publication Number Publication Date
DE50115299D1 true DE50115299D1 (de) 2010-02-25

Family

ID=7666705

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10064941A Ceased DE10064941A1 (de) 2000-09-22 2000-12-23 Gaseinlassorgan
DE50115299T Expired - Lifetime DE50115299D1 (de) 2000-09-22 2001-07-14 Cvd-verfahren und gaseinlassorgan zur durchführung des verfahrens

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE10064941A Ceased DE10064941A1 (de) 2000-09-22 2000-12-23 Gaseinlassorgan

Country Status (3)

Country Link
JP (1) JP4922540B2 (de)
KR (1) KR100797227B1 (de)
DE (2) DE10064941A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004009130A1 (de) 2004-02-25 2005-09-15 Aixtron Ag Einlasssystem für einen MOCVD-Reaktor
DE102005056320A1 (de) * 2005-11-25 2007-06-06 Aixtron Ag CVD-Reaktor mit einem Gaseinlassorgan
KR100795487B1 (ko) * 2006-09-27 2008-01-16 주식회사 실트론 층류유동제어장치 및 이를 구비한 화학기상증착반응기
DE102008055582A1 (de) 2008-12-23 2010-06-24 Aixtron Ag MOCVD-Reaktor mit zylindrischem Gaseinlassorgan
FR3010092B1 (fr) 2013-09-02 2017-05-26 Commissariat Energie Atomique Procede et dispositif de traitement de la surface libre d'un materiau
DE102015107297A1 (de) * 2015-05-11 2016-11-17 Von Ardenne Gmbh Prozessieranordnung

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1056430A (en) 1962-11-13 1967-01-25 Texas Instruments Inc Epitaxial process and apparatus for semiconductors
JPS5524424A (en) * 1978-08-09 1980-02-21 Kokusai Electric Co Ltd Forming device of pressure-reduced epitaxial layer
FR2628985B1 (fr) * 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a paroi protegee contre les depots
FR2628984B1 (fr) * 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a planetaire
JPH03126877A (ja) * 1989-10-11 1991-05-30 Babcock Hitachi Kk 光励起ｃｖｄ装置
JP3052574B2 (ja) * 1992-06-01 2000-06-12 富士通株式会社 半導体薄膜製造装置
JP3414475B2 (ja) * 1994-02-25 2003-06-09 スタンレー電気株式会社 結晶成長装置
JPH08335557A (ja) * 1995-06-05 1996-12-17 Japan Energy Corp 気相エピタキシャル成長装置
JPH09246192A (ja) * 1996-03-05 1997-09-19 Nissin Electric Co Ltd 薄膜気相成長装置
JP3376809B2 (ja) * 1996-03-27 2003-02-10 松下電器産業株式会社 有機金属気相成長装置
JPH104065A (ja) * 1996-06-17 1998-01-06 Toshiba Mach Co Ltd 枚葉式減圧ｃｖｄ装置
US5954881A (en) 1997-01-28 1999-09-21 Northrop Grumman Corporation Ceiling arrangement for an epitaxial growth reactor
WO1998045501A1 (en) * 1997-04-10 1998-10-15 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device and a device for applying such a method

Also Published As

Publication number Publication date
KR20030033062A (ko) 2003-04-26
JP2004510324A (ja) 2004-04-02
DE10064941A1 (de) 2002-04-11
JP4922540B2 (ja) 2012-04-25
KR100797227B1 (ko) 2008-01-23

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