CY1121199T1 - Μεθοδος για την εφαρμογη επικαλυψεων λεπτου υμενιου και γραμμη παραγωγης για την εκτελεση της μεθοδου - Google Patents
Μεθοδος για την εφαρμογη επικαλυψεων λεπτου υμενιου και γραμμη παραγωγης για την εκτελεση της μεθοδουInfo
- Publication number
- CY1121199T1 CY1121199T1 CY20181101223T CY181101223T CY1121199T1 CY 1121199 T1 CY1121199 T1 CY 1121199T1 CY 20181101223 T CY20181101223 T CY 20181101223T CY 181101223 T CY181101223 T CY 181101223T CY 1121199 T1 CY1121199 T1 CY 1121199T1
- Authority
- CY
- Cyprus
- Prior art keywords
- roller
- thin film
- film coatings
- chamber
- production line
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
Η ομάδα εφευρέσεων αναφέρεται σε γραμμές παραγωγής, ιδιαιτέρως σε εγκαταστάσεις επεξεργασίας υπό κενό, και σε μια μέθοδο για την εφαρμογή επικαλύψεων λεπτών υμενίων με δεδομένα οπτικά, ηλεκτρικά και άλλα χαρακτηριστικά. Η προαναφερόμενη γραμμή παραγωγής για την εφαρμογή επικαλύψεων λεπτών υμενίων περιέχει έναν θάλαμο υδατοφράκτη εισόδου, έναν θάλαμο επεξεργασίας που έχει, διαδοχικά παρεχόμενα σε αυτόν: τουλάχιστον μια διάταξη επεξεργασίας, η οποία σχηματίζει μια περιοχή επεξεργασίας, έναν θάλαμο πρόσκρουσης εξόδου, ένα σύστημα μεταφοράς και μια βάση υποστρώματος, η οποία μπορεί να κινείται κατά μήκος των θαλάμων. Η βάση υποστρώματος είναι στη μορφή ενός φορείου που έχει έναν κύλινδρο εγκατεστημένο σε αυτό, με τον εν λόγω κύλινδρο να διευθετείται ομοαξονικά στην κατεύθυνση κίνησης του φορείου και να μπορεί να περιστρέφεται. Η γωνιακή ταχύτητα περιστροφής του κυλίνδρου και η γραμμική ταχύτητα μετατόπισης του φορείου είναι σταθερές κατά τη διάρκεια της διαδικασίας επεξεργασίας και επιλέγονται έτσι ώστε κάθε σημείο στην επιφάνεια του κυλίνδρου να εκτελεί δυο πλήρεις περιστροφές ενώ περνά μέσα από την περιοχή επεξεργασίας. Έτσι, καθίσταται δυνατό να υποβάλλονται σε επεξεργασία μεγάλα εύκαμπτα υποστρώματα και επίσης μικρά υποστρώματα με υψηλό βαθμό ομοιομορφίας κάλυψης και υψηλή αποτελεσματικότητα της χρήσιμης αξιοποίησης των εφαρμοζόμενων υλικών.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/RU2014/000010 WO2015108432A1 (ru) | 2014-01-14 | 2014-01-14 | Способ нанесения тонкопленочных покрытий и технологическая линия для его осуществления |
Publications (1)
Publication Number | Publication Date |
---|---|
CY1121199T1 true CY1121199T1 (el) | 2020-05-29 |
Family
ID=53543223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CY20181101223T CY1121199T1 (el) | 2014-01-14 | 2018-11-20 | Μεθοδος για την εφαρμογη επικαλυψεων λεπτου υμενιου και γραμμη παραγωγης για την εκτελεση της μεθοδου |
Country Status (17)
Country | Link |
---|---|
US (1) | US10385446B2 (el) |
EP (1) | EP3095890B1 (el) |
JP (1) | JP6534390B2 (el) |
KR (1) | KR102092815B1 (el) |
CN (1) | CN105980594B (el) |
CY (1) | CY1121199T1 (el) |
DK (1) | DK3095890T3 (el) |
ES (1) | ES2699888T3 (el) |
HR (1) | HRP20181983T1 (el) |
HU (1) | HUE040753T2 (el) |
IL (1) | IL246666B (el) |
LT (1) | LT3095890T (el) |
PL (1) | PL3095890T3 (el) |
PT (1) | PT3095890T (el) |
RS (1) | RS58180B1 (el) |
SI (1) | SI3095890T1 (el) |
WO (1) | WO2015108432A1 (el) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106893993B (zh) * | 2017-03-08 | 2019-01-25 | 深圳先进技术研究院 | 溅射镀膜设备及其镀膜腔室 |
CN107794508A (zh) * | 2017-11-15 | 2018-03-13 | 中山市创科科研技术服务有限公司 | 一种光学镀膜装置基板承载机构 |
DE102018115404A1 (de) | 2018-06-27 | 2020-01-02 | Schaeffler Technologies AG & Co. KG | Verfahren und Vorrichtung zur Beschichtung eines Bauteils mittels physikalischer Gasphasenabscheidung |
CN108677160B (zh) * | 2018-08-13 | 2020-12-29 | 武汉科瑞达真空科技有限公司 | 一种基于公自转装载托盘的连续镀膜生产线 |
EP3931366A1 (en) * | 2019-03-01 | 2022-01-05 | The Batteries spólka z ograniczona odpowiedzialnoscia | Processing line for depositing thin-film coatings |
CN111545749B (zh) * | 2020-04-24 | 2022-06-21 | 江苏大学 | 一种超高速激光熔覆复杂曲面回转体的方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4851095A (en) | 1988-02-08 | 1989-07-25 | Optical Coating Laboratory, Inc. | Magnetron sputtering apparatus and process |
US5618388A (en) * | 1988-02-08 | 1997-04-08 | Optical Coating Laboratory, Inc. | Geometries and configurations for magnetron sputtering apparatus |
US6485616B1 (en) * | 1999-12-29 | 2002-11-26 | Deposition Sciences, Inc. | System and method for coating substrates with improved capacity and uniformity |
US6571434B2 (en) * | 2000-09-14 | 2003-06-03 | Kim A. Ortiz | Connector device for releasably securing a strap member and a fastening mechanism together |
US20030003767A1 (en) * | 2001-06-29 | 2003-01-02 | Plasmion Corporation | High throughput hybrid deposition system and method using the same |
US6893544B2 (en) * | 2001-08-14 | 2005-05-17 | Samsung Corning Co., Ltd. | Apparatus and method for depositing thin films on a glass substrate |
DE102004008598B4 (de) * | 2004-02-21 | 2006-12-28 | Applied Films Gmbh & Co. Kg | Verfahren für den Betrieb einer Inline-Beschichtungsanlage |
JP2007077478A (ja) * | 2005-09-16 | 2007-03-29 | Sony Corp | 成膜方法及び成膜装置 |
US8398770B2 (en) * | 2007-09-26 | 2013-03-19 | Eastman Kodak Company | Deposition system for thin film formation |
RU78785U1 (ru) | 2008-06-02 | 2008-12-10 | ООО НПО "КвинтТех" | Автоматизированная установка для формирования тонкопленочных покрытий наноразмерной толщины методом молекулярного наслаивания |
CN105908145B (zh) * | 2011-11-04 | 2018-11-09 | 因特瓦克公司 | 线性扫描溅射系统和方法 |
CN102560408A (zh) * | 2012-01-20 | 2012-07-11 | 纳峰真空镀膜(上海)有限公司 | 连续真空镀膜装置 |
JP6231078B2 (ja) * | 2012-04-26 | 2017-11-15 | インテヴァック インコーポレイテッド | 真空プロセスのためのシステム構成 |
-
2014
- 2014-01-14 WO PCT/RU2014/000010 patent/WO2015108432A1/ru active Application Filing
- 2014-01-14 KR KR1020167022082A patent/KR102092815B1/ko active IP Right Grant
- 2014-01-14 EP EP14878801.1A patent/EP3095890B1/de active Active
- 2014-01-14 RS RS20181454A patent/RS58180B1/sr unknown
- 2014-01-14 SI SI201430994T patent/SI3095890T1/sl unknown
- 2014-01-14 HU HUE14878801A patent/HUE040753T2/hu unknown
- 2014-01-14 ES ES14878801T patent/ES2699888T3/es active Active
- 2014-01-14 LT LTEP14878801.1T patent/LT3095890T/lt unknown
- 2014-01-14 PT PT14878801T patent/PT3095890T/pt unknown
- 2014-01-14 US US15/101,891 patent/US10385446B2/en active Active
- 2014-01-14 CN CN201480073276.0A patent/CN105980594B/zh active Active
- 2014-01-14 PL PL14878801T patent/PL3095890T3/pl unknown
- 2014-01-14 JP JP2016547046A patent/JP6534390B2/ja active Active
- 2014-01-14 DK DK14878801.1T patent/DK3095890T3/da active
-
2016
- 2016-07-07 IL IL246666A patent/IL246666B/en active IP Right Grant
-
2018
- 2018-11-20 CY CY20181101223T patent/CY1121199T1/el unknown
- 2018-11-27 HR HRP20181983TT patent/HRP20181983T1/hr unknown
Also Published As
Publication number | Publication date |
---|---|
PL3095890T3 (pl) | 2019-02-28 |
JP2017506289A (ja) | 2017-03-02 |
KR20160106748A (ko) | 2016-09-12 |
LT3095890T (lt) | 2018-12-10 |
US10385446B2 (en) | 2019-08-20 |
EP3095890B1 (de) | 2018-08-29 |
RS58180B1 (sr) | 2019-03-29 |
HUE040753T2 (hu) | 2019-03-28 |
SI3095890T1 (sl) | 2019-01-31 |
EP3095890A4 (de) | 2016-11-23 |
WO2015108432A1 (ru) | 2015-07-23 |
HRP20181983T1 (hr) | 2019-01-25 |
KR102092815B1 (ko) | 2020-04-24 |
CN105980594B (zh) | 2019-06-18 |
IL246666B (en) | 2020-08-31 |
IL246666A0 (en) | 2016-08-31 |
ES2699888T3 (es) | 2019-02-13 |
EP3095890A1 (de) | 2016-11-23 |
US20160333467A1 (en) | 2016-11-17 |
PT3095890T (pt) | 2018-12-05 |
CN105980594A (zh) | 2016-09-28 |
JP6534390B2 (ja) | 2019-06-26 |
DK3095890T3 (da) | 2019-01-02 |
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