CS274827B2 - Method of hydrogenated silicon carbide's inorganic amorphous thin layer production - Google Patents
Method of hydrogenated silicon carbide's inorganic amorphous thin layer productionInfo
- Publication number
- CS274827B2 CS274827B2 CS471688A CS471688A CS274827B2 CS 274827 B2 CS274827 B2 CS 274827B2 CS 471688 A CS471688 A CS 471688A CS 471688 A CS471688 A CS 471688A CS 274827 B2 CS274827 B2 CS 274827B2
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- silicon carbide
- thin layer
- amorphous thin
- hydrogenated silicon
- layer production
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 2
- 239000000126 substance Substances 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 abstract 1
- 238000004062 sedimentation Methods 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Carbon And Carbon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS471688A CS274827B2 (en) | 1988-06-30 | 1988-06-30 | Method of hydrogenated silicon carbide's inorganic amorphous thin layer production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS471688A CS274827B2 (en) | 1988-06-30 | 1988-06-30 | Method of hydrogenated silicon carbide's inorganic amorphous thin layer production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CS8804716A1 CS8804716A1 (en) | 1990-10-12 |
| CS274827B2 true CS274827B2 (en) | 1991-11-12 |
Family
ID=5390550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS471688A CS274827B2 (en) | 1988-06-30 | 1988-06-30 | Method of hydrogenated silicon carbide's inorganic amorphous thin layer production |
Country Status (1)
| Country | Link |
|---|---|
| CS (1) | CS274827B2 (cs) |
-
1988
- 1988-06-30 CS CS471688A patent/CS274827B2/cs unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CS8804716A1 (en) | 1990-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR950021343A (ko) | 정전척크 부착 세라믹 히터 | |
| JPS5777021A (en) | Manufacture of amorphous silicon | |
| WO2002048428A1 (fr) | Procede de formation d'une couche mince, article enduit de ladite couche, couche optique, electrode a revetement dielectrique et unite de traitement a decharge de plasma | |
| JPS5833829A (ja) | 薄膜形成装置 | |
| JPS56158873A (en) | Dry etching method | |
| KR950000622A (ko) | 정전척이 부착된 세라믹 히터 | |
| JPS5684476A (en) | Etching method of gas plasma | |
| US4954365A (en) | Method of preparing a thin diamond film | |
| GB1533497A (en) | Apparatus and method for depositing dielectric films using a glow discharge | |
| KR890016219A (ko) | 다이야몬드 성장 방법 | |
| JPS55110032A (en) | Method for high-frequency heated epitaxial growth | |
| AU2002359536A8 (en) | Methods of forming capacitors and methods of forming capacitor dielectric layers | |
| KR950021138A (ko) | 반도체 장치의 제조 방법 | |
| TW376552B (en) | Semiconductor device and method of production thereof | |
| JPS5731144A (en) | Mamufacture of semiconductor device | |
| CS274827B2 (en) | Method of hydrogenated silicon carbide's inorganic amorphous thin layer production | |
| KR970067603A (ko) | 비정질 탄소 박막 및 그것의 형성 방법, 그리고 비정질 탄소 박막을 사용한 반도체 디바이스 | |
| CA2112308A1 (en) | Method of Making White Diamond Film | |
| ES2031098T3 (es) | Procedimiento y dispositivo para la configuracion de una capa mediante proceso quimico de plasma. | |
| Dua et al. | Large area diamond deposition in HFCVD technique employing convective flow of gases | |
| JPS5767009A (en) | Formation of film | |
| JPS6445792A (en) | Production of article coated with pyrolytic boron nitride | |
| JPS56149306A (en) | Formation of silicon nitride film | |
| JPS643097A (en) | Substrate having high heat conductivity | |
| SU1264010A1 (ru) | Термопара и способ ее изготовлени |