CS274827B2 - Method of hydrogenated silicon carbide's inorganic amorphous thin layer production - Google Patents

Method of hydrogenated silicon carbide's inorganic amorphous thin layer production

Info

Publication number
CS274827B2
CS274827B2 CS471688A CS471688A CS274827B2 CS 274827 B2 CS274827 B2 CS 274827B2 CS 471688 A CS471688 A CS 471688A CS 471688 A CS471688 A CS 471688A CS 274827 B2 CS274827 B2 CS 274827B2
Authority
CS
Czechoslovakia
Prior art keywords
silicon carbide
thin layer
amorphous thin
hydrogenated silicon
layer production
Prior art date
Application number
CS471688A
Other languages
English (en)
Other versions
CS8804716A1 (en
Inventor
Jiri Ing Stuchlik
Jan Rndr Csc Kocka
Milan Rndr Csc Vanecek
Oldrich Stika
Milos Rndr Nesladek
Original Assignee
Fyzikalni Ustav Csav
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fyzikalni Ustav Csav filed Critical Fyzikalni Ustav Csav
Priority to CS471688A priority Critical patent/CS274827B2/cs
Publication of CS8804716A1 publication Critical patent/CS8804716A1/cs
Publication of CS274827B2 publication Critical patent/CS274827B2/cs

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Carbon And Carbon Compounds (AREA)
CS471688A 1988-06-30 1988-06-30 Method of hydrogenated silicon carbide's inorganic amorphous thin layer production CS274827B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CS471688A CS274827B2 (en) 1988-06-30 1988-06-30 Method of hydrogenated silicon carbide's inorganic amorphous thin layer production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CS471688A CS274827B2 (en) 1988-06-30 1988-06-30 Method of hydrogenated silicon carbide's inorganic amorphous thin layer production

Publications (2)

Publication Number Publication Date
CS8804716A1 CS8804716A1 (en) 1990-10-12
CS274827B2 true CS274827B2 (en) 1991-11-12

Family

ID=5390550

Family Applications (1)

Application Number Title Priority Date Filing Date
CS471688A CS274827B2 (en) 1988-06-30 1988-06-30 Method of hydrogenated silicon carbide's inorganic amorphous thin layer production

Country Status (1)

Country Link
CS (1) CS274827B2 (cs)

Also Published As

Publication number Publication date
CS8804716A1 (en) 1990-10-12

Similar Documents

Publication Publication Date Title
CA1269061C (en) PRODUCTION OF DIAMOND-LIKE CARBON COATINGS
KR950021343A (ko) 정전척크 부착 세라믹 히터
JPS5833829A (ja) 薄膜形成装置
KR950000622A (ko) 정전척이 부착된 세라믹 히터
JPS5684476A (en) Etching method of gas plasma
US4954365A (en) Method of preparing a thin diamond film
GB1533497A (en) Apparatus and method for depositing dielectric films using a glow discharge
KR890016219A (ko) 다이야몬드 성장 방법
JPS55110032A (en) Method for high-frequency heated epitaxial growth
KR950021138A (ko) 반도체 장치의 제조 방법
KR980006024A (ko) 더미 웨이퍼
JPS5731144A (en) Mamufacture of semiconductor device
CS274827B2 (en) Method of hydrogenated silicon carbide's inorganic amorphous thin layer production
EP0794569A3 (en) Amorphous carbon film, formation process thereof, and semiconductor device making use of the film
GT199600008A (es) Proceso para la produccion de un recubrimiento de proteccionsobre la superficie de un articulo de vidrio o ceramica
CA2112308A1 (en) Method of Making White Diamond Film
JPS57155365A (en) Method of forming silicon carbide film excellent in adhesion on metal substrate surface
TW343393B (en) Electron emissive film
Dua et al. Large area diamond deposition in HFCVD technique employing convective flow of gases
JPS643097A (en) Substrate having high heat conductivity
SU1264010A1 (ru) Термопара и способ ее изготовлени
CA2283213A1 (en) Method of and device for producing carbide and carbon solid solution containing surface layers
JPS57211239A (en) Formation of insulating film
RU94037368A (ru) Способ формирования пленки карбида кремния на подложке
JPS6464325A (en) Electrode for plasma etching